Paul J. Rudeck

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of filling isolation trenches for semiconductor devices and...
- Patent number 8,304,322
- Issue date Nov 6, 2012
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor contact device
- Patent number 7,932,557
- Issue date Apr 26, 2011
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of selective oxidation to form asymmetrical oxide features duri...
- Patent number 7,429,514
- Issue date Sep 30, 2008
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to remove an oxide seam along gate stack edge, when nitride...
- Patent number 7,420,240
- Issue date Sep 2, 2008
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical floating gate transistor
- Patent number 7,294,549
- Issue date Nov 13, 2007
- Micron Technology, Inc.
- Paul Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor contact device and method
- Patent number 7,294,567
- Issue date Nov 13, 2007
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing adjacent wordline disturb in a memory device
- Patent number 7,272,039
- Issue date Sep 18, 2007
- Micron Technology, Inc.
- Paul J. Rudeck
- G11 - INFORMATION STORAGE
Information Patent Grant
Modified source/drain re-oxidation method and system
- Patent number 7,271,435
- Issue date Sep 18, 2007
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing adjacent wordline disturb in a memory device
- Patent number 7,257,024
- Issue date Aug 14, 2007
- Micron Technology, Inc.
- Paul J. Rudeck
- G11 - INFORMATION STORAGE
Information Patent Grant
Minimizing adjacent wordline disturb in a memory device
- Patent number 7,212,435
- Issue date May 1, 2007
- Micron Technology, Inc.
- Paul J. Rudeck
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor contact device
- Patent number 7,148,547
- Issue date Dec 12, 2006
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate coupling in floating-gate memory cells
- Patent number 7,115,458
- Issue date Oct 3, 2006
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable memory devices supported by semiconductor substrates
- Patent number 7,091,549
- Issue date Aug 15, 2006
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified source/drain re-oxidation method and system
- Patent number 7,037,860
- Issue date May 2, 2006
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of selective oxidation to form asymmetrical oxide features duri...
- Patent number 7,015,111
- Issue date Mar 21, 2006
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and structure for an improved floating gate memory cell
- Patent number 7,015,098
- Issue date Mar 21, 2006
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical floating gate transistor
- Patent number 6,921,696
- Issue date Jul 26, 2005
- Micron Technology, Inc.
- Paul Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High coupling floating gate transistor
- Patent number 6,916,707
- Issue date Jul 12, 2005
- Micron Technology, Inc.
- Paul Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical flash memory cell with buried source rail
- Patent number 6,881,628
- Issue date Apr 19, 2005
- Micron Technology, Inc.
- Paul Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable memory devices supported by semiconductor substrates
- Patent number 6,873,005
- Issue date Mar 29, 2005
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating an improved floating gate memory cell
- Patent number 6,849,501
- Issue date Feb 1, 2005
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable memory devices supported by semiconductive substrates
- Patent number 6,803,624
- Issue date Oct 12, 2004
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory device and method of erasing
- Patent number 6,798,699
- Issue date Sep 28, 2004
- Micron Technology, Inc.
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming programmable memory devices comprising tungsten
- Patent number 6,777,291
- Issue date Aug 17, 2004
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High coupling floating gate transistor
- Patent number 6,774,431
- Issue date Aug 10, 2004
- Micron Technology, Inc.
- Paul Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High coupling floating gate transistor
- Patent number 6,762,093
- Issue date Jul 13, 2004
- Micron Technology, Inc.
- Paul Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified source/drain re-oxidation method and system
- Patent number 6,756,268
- Issue date Jun 29, 2004
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to remove an oxide seam along gate stack edge, when nitride...
- Patent number 6,713,350
- Issue date Mar 30, 2004
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical floating gate transistor
- Patent number 6,680,508
- Issue date Jan 20, 2004
- Micron Technology, Inc.
- Paul Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical flash memory cell with buried source rail
- Patent number 6,657,250
- Issue date Dec 2, 2003
- Micron Technology, Inc.
- Paul Rudeck
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS OF FILLING ISOLATION TRENCHES FOR SEMICONDUCTOR DEVICES AND...
- Publication number 20130009276
- Publication date Jan 10, 2013
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of filling isolation trenches for semiconductor devices and...
- Publication number 20070243692
- Publication date Oct 18, 2007
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile memory cells without diffusion junctions
- Publication number 20060278913
- Publication date Dec 14, 2006
- Micron Technology, Inc.
- Andrei Mihnea
- G11 - INFORMATION STORAGE
Information Patent Application
Gate coupling in floating-gate memory cells
- Publication number 20060267070
- Publication date Nov 30, 2006
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CONTACT DEVICE
- Publication number 20060237800
- Publication date Oct 26, 2006
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Minimizing adjacent wordline disturb in a memory device
- Publication number 20060198221
- Publication date Sep 7, 2006
- Micron Technology, Inc.
- Paul J. Rudeck
- G11 - INFORMATION STORAGE
Information Patent Application
Minimizing adjacent wordline disturb in a memory device
- Publication number 20060198222
- Publication date Sep 7, 2006
- Micron Technology, Inc.
- Paul J. Rudeck
- G11 - INFORMATION STORAGE
Information Patent Application
Use of selective oxidation to form asymmetrical oxide features duri...
- Publication number 20060166460
- Publication date Jul 27, 2006
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate coupling in floating-gate memory cells
- Publication number 20060043458
- Publication date Mar 2, 2006
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Minimizing adjacent wordline disturb in a memory device
- Publication number 20060002167
- Publication date Jan 5, 2006
- Micron Technology, Inc.
- Paul J. Rudeck
- G11 - INFORMATION STORAGE
Information Patent Application
Modified source/drain re-oxidation method and system
- Publication number 20050272203
- Publication date Dec 8, 2005
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical floating gate transistor
- Publication number 20050239249
- Publication date Oct 27, 2005
- Micron Technology, Inc.
- Paul Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Programmable memory devices supported by semiconductor substrates
- Publication number 20050098825
- Publication date May 12, 2005
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to remove an oxide seam along gate stack edge, when nitride...
- Publication number 20050098820
- Publication date May 12, 2005
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of selective oxidation to form asymmetrical oxide features duri...
- Publication number 20050090061
- Publication date Apr 28, 2005
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor contact device
- Publication number 20050026350
- Publication date Feb 3, 2005
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and structure for an improved floating gate memory cell
- Publication number 20050009276
- Publication date Jan 13, 2005
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Programmable memory devices supported by semiconductor substrates
- Publication number 20040201060
- Publication date Oct 14, 2004
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Modified source/drain re-oxidation method and system
- Publication number 20040185620
- Publication date Sep 23, 2004
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical flash memory cell with buried source rail
- Publication number 20040115886
- Publication date Jun 17, 2004
- Micron Technology, Inc.
- Paul Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for an oxide layer overlying an oxidation-resi...
- Publication number 20040113196
- Publication date Jun 17, 2004
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High coupling floating gate transistor
- Publication number 20040110362
- Publication date Jun 10, 2004
- Micron Technology, Inc.
- Paul Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical floating gate transistor
- Publication number 20040102007
- Publication date May 27, 2004
- Micron Technology, Inc.
- Paul Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH COUPLING FLOATING GATE TRANSISTOR
- Publication number 20040036106
- Publication date Feb 26, 2004
- Micron Technology, Inc.
- Paul Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High coupling floating gate transistor
- Publication number 20040036108
- Publication date Feb 26, 2004
- Micron Technology, Inc.
- Paul Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO REMOVE AN OXIDE SEAM ALONG GATE STACK EDGE, WHEN NITRIDE...
- Publication number 20040029319
- Publication date Feb 12, 2004
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Programmable memory devices comprising tungsten
- Publication number 20040004243
- Publication date Jan 8, 2004
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Programmable memory devices comprising tungsten, and methods of for...
- Publication number 20040005760
- Publication date Jan 8, 2004
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for an improved floating gate memory cell
- Publication number 20030203557
- Publication date Oct 30, 2003
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Advanced metallization approach for forming self-aligned contacts a...
- Publication number 20030170954
- Publication date Sep 11, 2003
- Micron Technology, Inc.
- Paul J. Rudeck
- H01 - BASIC ELECTRIC ELEMENTS

Paul J. Rudeck

Person

Patents Grantslast 30 patents

Methods of filling isolation trenches for semiconductor devices and...

Semiconductor contact device

Use of selective oxidation to form asymmetrical oxide features duri...

Method to remove an oxide seam along gate stack edge, when nitride...

Vertical floating gate transistor

Semiconductor contact device and method

Minimizing adjacent wordline disturb in a memory device

Modified source/drain re-oxidation method and system

Minimizing adjacent wordline disturb in a memory device

Minimizing adjacent wordline disturb in a memory device

Semiconductor contact device

Gate coupling in floating-gate memory cells

Programmable memory devices supported by semiconductor substrates

Modified source/drain re-oxidation method and system

Use of selective oxidation to form asymmetrical oxide features duri...

Methods and structure for an improved floating gate memory cell

Vertical floating gate transistor

High coupling floating gate transistor

Vertical flash memory cell with buried source rail

Programmable memory devices supported by semiconductor substrates

Methods for fabricating an improved floating gate memory cell

Programmable memory devices supported by semiconductive substrates

Flash memory device and method of erasing

Methods of forming programmable memory devices comprising tungsten

High coupling floating gate transistor

High coupling floating gate transistor

Modified source/drain re-oxidation method and system

Method to remove an oxide seam along gate stack edge, when nitride...

Vertical floating gate transistor

Vertical flash memory cell with buried source rail

Patents Applicationslast 30 patents

METHODS OF FILLING ISOLATION TRENCHES FOR SEMICONDUCTOR DEVICES AND...

Methods of filling isolation trenches for semiconductor devices and...

Non-volatile memory cells without diffusion junctions

Gate coupling in floating-gate memory cells

SEMICONDUCTOR CONTACT DEVICE

Minimizing adjacent wordline disturb in a memory device

Minimizing adjacent wordline disturb in a memory device

Use of selective oxidation to form asymmetrical oxide features duri...

Gate coupling in floating-gate memory cells

Minimizing adjacent wordline disturb in a memory device

Modified source/drain re-oxidation method and system

Vertical floating gate transistor

Programmable memory devices supported by semiconductor substrates

Method to remove an oxide seam along gate stack edge, when nitride...

Use of selective oxidation to form asymmetrical oxide features duri...

Semiconductor contact device

Methods and structure for an improved floating gate memory cell

Programmable memory devices supported by semiconductor substrates

Modified source/drain re-oxidation method and system

Vertical flash memory cell with buried source rail

Method and structure for an oxide layer overlying an oxidation-resi...

High coupling floating gate transistor

Vertical floating gate transistor

HIGH COUPLING FLOATING GATE TRANSISTOR

High coupling floating gate transistor

METHOD TO REMOVE AN OXIDE SEAM ALONG GATE STACK EDGE, WHEN NITRIDE...

Programmable memory devices comprising tungsten

Programmable memory devices comprising tungsten, and methods of for...

Method and structure for an improved floating gate memory cell

Advanced metallization approach for forming self-aligned contacts a...