Pei-Yang Yan

Person

Saratoga, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Phase shift mask structure and fabrication process
- Patent number 7,759,022
- Issue date Jul 20, 2010
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Mask with minimum reflectivity over absorber layer
- Patent number 7,556,894
- Issue date Jul 7, 2009
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method to correct EUVL mask substrate non-flatness
- Patent number 7,534,532
- Issue date May 19, 2009
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method and apparatus for clean photomask handling
- Patent number 7,452,637
- Issue date Nov 18, 2008
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Dual-layer EUV mask absorber with trenches having opposing sidewall...
- Patent number 7,410,733
- Issue date Aug 12, 2008
- Intel Corporation
- Pei-Yang Yan
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Interference multilayer capping design for multilayer reflective ma...
- Patent number 7,300,724
- Issue date Nov 27, 2007
- Intel Corporation
- Pei-Yang Yan
- G21 - NUCLEAR PHYSICS NUCLEAR ENGINEERING
Information Patent Grant
Reflective mask with high inspection contrast
- Patent number 7,118,832
- Issue date Oct 10, 2006
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Photomasking
- Patent number 7,083,881
- Issue date Aug 1, 2006
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Thermally-generated mask pattern
- Patent number 7,078,136
- Issue date Jul 18, 2006
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Proximity correcting lithography mask blanks
- Patent number 6,998,203
- Issue date Feb 14, 2006
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multilayer reflective extreme ultraviolet lithography mask blanks
- Patent number 6,998,202
- Issue date Feb 14, 2006
- Intel Corporation
- Pei-Yang Yan
- G21 - NUCLEAR PHYSICS NUCLEAR ENGINEERING
Information Patent Grant
Double-metal EUV mask absorber
- Patent number 6,913,706
- Issue date Jul 5, 2005
- Intel Corporation
- Pei-Yang Yan
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Absorber layer for EUV
- Patent number 6,908,714
- Issue date Jun 21, 2005
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High performance EUV mask
- Patent number 6,905,801
- Issue date Jun 14, 2005
- Intel Corporation
- Shoudeng Liang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Photolithographic mask fabrication
- Patent number 6,830,851
- Issue date Dec 14, 2004
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Photolithographic mask fabrication
- Patent number 6,818,357
- Issue date Nov 16, 2004
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Photomasking
- Patent number 6,818,361
- Issue date Nov 16, 2004
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Thermal generation of mask pattern
- Patent number 6,756,158
- Issue date Jun 29, 2004
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Re-usable extreme ultraviolet lithography multilayer mask blank
- Patent number 6,756,163
- Issue date Jun 29, 2004
- Intel Corporation
- Pei-Yang Yan
- G21 - NUCLEAR PHYSICS NUCLEAR ENGINEERING
Information Patent Grant
Enhanced inspection of extreme ultraviolet mask
- Patent number 6,720,118
- Issue date Apr 13, 2004
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Absorberless phase-shifting mask for EUV
- Patent number 6,641,959
- Issue date Nov 4, 2003
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method to fabricate extreme ultraviolet lithography masks
- Patent number 6,630,273
- Issue date Oct 7, 2003
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Extreme ultraviolet mask with improved absorber
- Patent number 6,610,447
- Issue date Aug 26, 2003
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Damascene extreme ultraviolet lithography alternative phase shift p...
- Patent number 6,607,862
- Issue date Aug 19, 2003
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Damascene extreme ultraviolet lithography (EUVL) photomask and meth...
- Patent number 6,593,041
- Issue date Jul 15, 2003
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Enhanced inspection of extreme ultraviolet mask
- Patent number 6,583,068
- Issue date Jun 24, 2003
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Photomasking
- Patent number 6,562,522
- Issue date May 13, 2003
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Mask absorber for extreme ultraviolet lithography
- Patent number 6,479,195
- Issue date Nov 12, 2002
- Intel Corporation
- Heinrich Kirchauer
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method to fabricate extreme ultraviolet lithography masks
- Patent number 6,355,381
- Issue date Mar 12, 2002
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Clean-enclosure window to protect photolithographic mask
- Patent number 6,280,886
- Issue date Aug 28, 2001
- Intel Corporation
- Pei-Yang Yan
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY

Patents Applicationslast 30 patents

Information Patent Application
EXTREME ULTRAVIOLET (EUV) MASK PROTECTION AGAINST INSPECTION LASER...
- Publication number 20090075179
- Publication date Mar 19, 2009
- Erdem Ultanir
- B82 - NANO-TECHNOLOGY
Information Patent Application
Phase shift mask structure and fabrication process
- Publication number 20080076035
- Publication date Mar 27, 2008
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Reclaim method for extreme ultraviolet lithography mask blank and a...
- Publication number 20070090084
- Publication date Apr 26, 2007
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Mask with minimum reflectivity over absorber layer
- Publication number 20070026323
- Publication date Feb 1, 2007
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Leaky absorber for extreme ultraviolet mask
- Publication number 20060222961
- Publication date Oct 5, 2006
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method to correct EUVL mask substrate non-flatness
- Publication number 20060166109
- Publication date Jul 27, 2006
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Interference multilayer capping design for multilayer reflective ma...
- Publication number 20050277030
- Publication date Dec 15, 2005
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method and apparatus for clean photomask handling
- Publication number 20050277031
- Publication date Dec 15, 2005
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Double-metal EUV mask absorber
- Publication number 20050227152
- Publication date Oct 13, 2005
- Pei-Yang Yan
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Application
Photomasking
- Publication number 20050069789
- Publication date Mar 31, 2005
- Intel Corporation, a Delaware corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Proximity correcting lithography mask blanks
- Publication number 20050026048
- Publication date Feb 3, 2005
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Multilayer reflective extreme ultraviolet lithography mask blanks
- Publication number 20050026046
- Publication date Feb 3, 2005
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Reflective mask with high inspection contrast
- Publication number 20040131948
- Publication date Jul 8, 2004
- Intel Corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
High performance EUV mask
- Publication number 20040126670
- Publication date Jul 1, 2004
- Shoudeng Liang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Double-metal EUV mask absorber
- Publication number 20040124174
- Publication date Jul 1, 2004
- Pei-Yang Yan
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Application
Thermal generation of mask pattern
- Publication number 20040126675
- Publication date Jul 1, 2004
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Re-usable extreme ultraviolet lithography multilayer mask blank
- Publication number 20040002009
- Publication date Jan 1, 2004
- Pei-Yang Yan
- G02 - OPTICS
Information Patent Application
Extreme ultraviolet mask with improved absorber
- Publication number 20030228530
- Publication date Dec 11, 2003
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Enhanced inspection of extreme ultraviolet mask
- Publication number 20030203289
- Publication date Oct 30, 2003
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Photolithographic mask fabrication
- Publication number 20030190532
- Publication date Oct 9, 2003
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Photomasking
- Publication number 20030170572
- Publication date Sep 11, 2003
- Intel Corporation, a Delaware corporation
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Photolithographic mask fabrication
- Publication number 20030064296
- Publication date Apr 3, 2003
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
DAMASCENE EXTREME ULTRAVIOLET LITHOGRAPHY ALTERNATIVE PHASE SHIFT P...
- Publication number 20030039894
- Publication date Feb 27, 2003
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Absorberless phase-shifting mask for EUV
- Publication number 20030031937
- Publication date Feb 13, 2003
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Damascene extreme ultraviolet lithography ( EUVL) photomask and met...
- Publication number 20030027053
- Publication date Feb 6, 2003
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Thermal generation of mask pattern
- Publication number 20030003373
- Publication date Jan 2, 2003
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Extreme ultraviolet mask with improved absorber
- Publication number 20020142230
- Publication date Oct 3, 2002
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Enhanced inspection of extreme ultraviolet mask
- Publication number 20020142620
- Publication date Oct 3, 2002
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method to fabricate extreme ultraviolet lithography masks
- Publication number 20020012855
- Publication date Jan 31, 2002
- Pei-Yang Yan
- B82 - NANO-TECHNOLOGY

Pei-Yang Yan

Person

Patents Grantslast 30 patents

Phase shift mask structure and fabrication process

Mask with minimum reflectivity over absorber layer

Method to correct EUVL mask substrate non-flatness

Method and apparatus for clean photomask handling

Dual-layer EUV mask absorber with trenches having opposing sidewall...

Interference multilayer capping design for multilayer reflective ma...

Reflective mask with high inspection contrast

Photomasking

Thermally-generated mask pattern

Proximity correcting lithography mask blanks

Multilayer reflective extreme ultraviolet lithography mask blanks

Double-metal EUV mask absorber

Absorber layer for EUV

High performance EUV mask

Photolithographic mask fabrication

Photolithographic mask fabrication

Photomasking

Thermal generation of mask pattern

Re-usable extreme ultraviolet lithography multilayer mask blank

Enhanced inspection of extreme ultraviolet mask

Absorberless phase-shifting mask for EUV

Method to fabricate extreme ultraviolet lithography masks

Extreme ultraviolet mask with improved absorber

Damascene extreme ultraviolet lithography alternative phase shift p...

Damascene extreme ultraviolet lithography (EUVL) photomask and meth...

Enhanced inspection of extreme ultraviolet mask

Photomasking

Mask absorber for extreme ultraviolet lithography

Method to fabricate extreme ultraviolet lithography masks

Clean-enclosure window to protect photolithographic mask

Patents Applicationslast 30 patents

EXTREME ULTRAVIOLET (EUV) MASK PROTECTION AGAINST INSPECTION LASER...

Phase shift mask structure and fabrication process

Reclaim method for extreme ultraviolet lithography mask blank and a...

Mask with minimum reflectivity over absorber layer

Leaky absorber for extreme ultraviolet mask

Method to correct EUVL mask substrate non-flatness

Interference multilayer capping design for multilayer reflective ma...

Method and apparatus for clean photomask handling

Double-metal EUV mask absorber

Photomasking

Proximity correcting lithography mask blanks

Multilayer reflective extreme ultraviolet lithography mask blanks

Reflective mask with high inspection contrast

High performance EUV mask

Double-metal EUV mask absorber

Thermal generation of mask pattern

Re-usable extreme ultraviolet lithography multilayer mask blank

Extreme ultraviolet mask with improved absorber

Enhanced inspection of extreme ultraviolet mask

Photolithographic mask fabrication

Photomasking

Photolithographic mask fabrication

DAMASCENE EXTREME ULTRAVIOLET LITHOGRAPHY ALTERNATIVE PHASE SHIFT P...

Absorberless phase-shifting mask for EUV

Damascene extreme ultraviolet lithography ( EUVL) photomask and met...

Thermal generation of mask pattern

Extreme ultraviolet mask with improved absorber

Enhanced inspection of extreme ultraviolet mask

Method to fabricate extreme ultraviolet lithography masks