Philip G. Neudeck

Person

Olmsted Falls, OH, US

People

Patents Grantslast 30 patents

Information Patent Grant
Compensation for device property variation according to wafer location
- Patent number 11,128,293
- Issue date Sep 21, 2021
- United States of America as represented by the Administrator of National Aero...
- Michael J. Krasowski
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Reliability extreme temperature integrated circuits and method for...
- Patent number 11,004,802
- Issue date May 11, 2021
- United States of America as represented by the Administrator of National Aero...
- David J. Spry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Larger-area integrated electrical metallization dielectric structur...
- Patent number 10,490,550
- Issue date Nov 26, 2019
- United States of America as represented by the Administrator of National Aero...
- David J. Spry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Durable bond pad structure for electrical connection to extreme env...
- Patent number 10,256,202
- Issue date Apr 9, 2019
- The United States of America as Represented by the Administrator of National...
- David J. Spry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current source logic gate
- Patent number 10,122,363
- Issue date Nov 6, 2018
- The United States of America as Represented by the Administrator of National...
- Michael J. Krasowski
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Interconnection of semiconductor devices in extreme environment mic...
- Patent number 9,978,686
- Issue date May 22, 2018
- The United States of America as Represented by the Administrator of National...
- David J. Spry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for providing semiconductors having self-aligned ion implant
- Patent number 8,841,698
- Issue date Sep 23, 2014
- The United States of America as Represented by the Administrator of National...
- Philip G. Neudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for providing semiconductors having self-aligned ion implant
- Patent number 7,935,601
- Issue date May 3, 2011
- The United States of America as Represented by the Administrator of National...
- Philip G. Neudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the growth of large low-defect single crystals
- Patent number 7,449,065
- Issue date Nov 11, 2008
- Ohio Aerospace Institute
- J. Anthony Powell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for the production of nanometer scale step height reference...
- Patent number 6,869,480
- Issue date Mar 22, 2005
- The United States of America as represented by the United States National Aer...
- Phillip B. Abel
- G01 - MEASURING TESTING
Information Patent Grant
Lateral movement of screw dislocations during homoepitaxial growth...
- Patent number 6,783,592
- Issue date Aug 31, 2004
- The United States of America as Represented by the Administrator of National...
- Philip G. Neudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing low-defect single crystal heteroepitaxial films
- Patent number 6,488,771
- Issue date Dec 3, 2002
- The United States of America as represented by the administrator of the Natio...
- J. Anthony Powell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for growth of relatively large step-free SiC crystal surfaces
- Patent number 6,461,944
- Issue date Oct 8, 2002
- The United States of America as represented by the administrator of the Natio...
- Philip G. Neudeck
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growth of crystal surfaces and growth of heteroepitaxial...
- Patent number 6,165,874
- Issue date Dec 26, 2000
- The United States of America as represented by the administrator of the Natio...
- J. Anthony Powell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Wide dynamic range RF mixers using wide bandgap semiconductors
- Patent number 6,111,452
- Issue date Aug 29, 2000
- The United States of America as represented by the Secretary of the Army
- Christian Fazi
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Method for growth of crystal surfaces and growth of heteroepitaxial...
- Patent number 5,915,194
- Issue date Jun 22, 1999
- The United States of America as Represented by the Administrator of National...
- J. Anthony Powell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Compound semi-conductors and controlled doping thereof
- Patent number 5,709,745
- Issue date Jan 20, 1998
- Ohio Aerospace Institute
- David J. Larkin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Compound semiconductor and controlled doping thereof
- Patent number 5,463,978
- Issue date Nov 7, 1995
- Ohio Aerospace Institute
- David J. Larkin
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Method For Providing Semiconductors Having Self-Aligned Ion Implant
- Publication number 20110212583
- Publication date Sep 1, 2011
- Philip G. Neudeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for growth of bulk crystals by vapor phase epitaxy
- Publication number 20040144301
- Publication date Jul 29, 2004
- Philip G. Neudeck
- C30 - CRYSTAL GROWTH
Information Patent Application
Lateral movement of screw dislocations during homoepitaxial growth...
- Publication number 20040069212
- Publication date Apr 15, 2004
- Philip G. Neudeck
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR GROWTH OF RELATIVELY LARGE STEP-FREE SIC CRYSTAL SURFACES
- Publication number 20020106842
- Publication date Aug 8, 2002
- Philip G. Neudeck
- C30 - CRYSTAL GROWTH

Philip G. Neudeck

Person

Patents Grantslast 30 patents

Compensation for device property variation according to wafer location

Reliability extreme temperature integrated circuits and method for...

Larger-area integrated electrical metallization dielectric structur...

Durable bond pad structure for electrical connection to extreme env...

Current source logic gate

Interconnection of semiconductor devices in extreme environment mic...

Method for providing semiconductors having self-aligned ion implant

Method for providing semiconductors having self-aligned ion implant

Method for the growth of large low-defect single crystals

Method for the production of nanometer scale step height reference...

Lateral movement of screw dislocations during homoepitaxial growth...

Method for growing low-defect single crystal heteroepitaxial films

Methods for growth of relatively large step-free SiC crystal surfaces

Method for growth of crystal surfaces and growth of heteroepitaxial...

Wide dynamic range RF mixers using wide bandgap semiconductors

Method for growth of crystal surfaces and growth of heteroepitaxial...

Compound semi-conductors and controlled doping thereof

Compound semiconductor and controlled doping thereof

Patents Applicationslast 30 patents

Method For Providing Semiconductors Having Self-Aligned Ion Implant

Method for growth of bulk crystals by vapor phase epitaxy

Lateral movement of screw dislocations during homoepitaxial growth...

METHODS FOR GROWTH OF RELATIVELY LARGE STEP-FREE SIC CRYSTAL SURFACES