Ishibashi, et. al. , High Quality GaN films obtained by air-bridged lateral epitaxial growth, Journal of Crystal Growth, 221 (2000) 338-344.* |
N. Zaitseva, I. Smolsky and L. Carman “Growth Phenomena in the Surface Layer and Step Generation from the Crystal Growth,” published in the Journal of Crystal Growth, vol. 222, No. 1/2 pp. 249-262 (2001). |
Powell, et al, “Growth of Step-Free Surfaces on Device Size SiC Mesas”, Applied Physics Letters, vol. 77, No. 10, pp. 1449-1451 (Sep. 4, 2000). |
Davis, et al, “Proceedings of ICSCRM '99, Material Sciences Forum”, vol. 338-342, pp. 1471-1476 (1999). |
P. Venne'que's, et al, “Reduction Mechanism for Defect Densities in GaN Using One or Two Step Epitaxial Lateral Overgrowth Methods”, J. Appl. Physics, vol. 87, No. 9, pp. 4175-4181 (2000). |
S. J. Pearton, et al, “GaN Processing, Defects, and Devices”, J. Appl. Physics, vol. 86, No. 1, pp. 1-78 (1999). |