Recent Progress in SiC Crystal Growth l l l Paper presented at Silicon Carbide and Related Materials 1995 Conf., Kyoto, Japan, 1996 by V. F. Tsvetkov, S. T. Allen, H. S. Kong and C. H. Carter, Jr. |
Extremely Flat Layer Surfaces in Liquid Phase Epitaxy of GaAs and AlxGa1-xAs . . . Journal of Crystal Growth 87 (1988) in North-Holland, Amsterdam by U. Murlock, M. Kelsch and E. Bauser. |
Control of the polytypes (3C,2H) of silicon carbide thin films deposited on pseudomorphic aluminum nitride (0001) surfaces . . . Inst. Phys. Conf. Ser. No. 142; Chapter 1 presented at Silicon Carbide and Related Maerials 1995 Conf . . . Kyoto, Japan. |
Initial stages of growth of Sic and A1N thin films on vicinal and on-axis surfaces of 6H-Sic(0001) . . . presented at Silicon Cardide and Related Materials 1995 Conf . . . Kyoto, Japan. |
Nucleartion and Step motion in chemical vapor deposition of SiC on 6H-SiC(0001) faces. 1994 American Institute of Physics, Dec. 1994 by Tsunenobu Kimoto and Hiroyuki Matsinami. |