Gerald B. Stringfellow, "Organometallic Vapor-Phase Epitaxy: Theory and Practice" Academic Press, Inc., New York (1989), Chapters 1 and 7 thereof. |
H. Morkoc, S. Strite, G.B. Gao, Mi. Lin, B. Sverdlov, and M. Burns, "Large-Band-Gap SiC, III-V Nitride, and II-BI ZnSe-Based-Semiconductor Device Technologies" J. Appl. Phys, vol. 76, No. 3, Aug. 1 1994 (pp. 1363-1398). |
Sorab K. Ghandhi "VLSI Fabrication Principles" John Wiley & Sons, New York (1983), Sections 5.1 and 5.3. |
J. Bloem and L.J. Giling, "Current Topics in Materials Science," vol. 1 Edited by E. Kaldis, North-Holland Publishing Co., New York (1978), Chapter 4, "Mechanisms of the Chemical Vapour Depositions of Silicon," Section 7. |
H. Liu et al "Large Area Growth of GaN Thin Films in a Multi-Wafer Rotating Disk Reactor," Inst. Phys. Conf. Ser. No. 141: Chapter 2, pp. 119-124, Paper presented at Int. Sump. Compound Semicond., San Diego Sep. 18-22, 1994 1995, IOP Publishing Ltd. |
H. Jurgensen, "CVD Engineering for Multilayer Multicomponent Materials: Optoelectronics," Materials Chemistry and Physics 41 (1995) pp. 79-86. |
Ralph E. Williams, "Gallium Arsenide Processing Techniques," ARTECH House, Inc., Dedham, MA, (pp. 79-83) (1984). |
F. Ali and A. Gupta, "HEMTs and HBTs Devices, Fabrication, and Circuits," ARTECH House, Inc., Norwood, MA (Chapter 1 pp. 1-10) (1991). |
D.K. Schroder, "Advanced MOS Devices" Modular Series on Solid State Devices, edited by G.W. Neudeck and R.F. Pierret, Addison-Wesley Publishing Company, Reading, Mass., (pp. 204-208) (1987). |
R.C. Jaeger "Volume V Introduction to Microelectronic Fabrication," Modular Series on Solid State Devices, edited by G.W. Neudeck and R.F. Pierret, Addison-Wesley Publishing Company, Reading, Mass., (pp. 6-9) (1998). |
S.M. Sze, "Physics of Semiconductor Devices," (Second Edition) John Wiley & Sons, New York, New York (Chapter 8 pp. 431-510) (1981). |