Rakesh K. Lal

Person

Isla Vista, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
N-polar devices including a depleting layer with improved conductivity
- Patent number 11,973,138
- Issue date Apr 30, 2024
- Transphorm Technology, Inc.
- Geetak Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode III-nitride devices having an Al1-xSixO gate insul...
- Patent number 11,322,599
- Issue date May 3, 2022
- Transphorm Technology, Inc.
- Carl Joseph Neufeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride devices including a graded depleting layer
- Patent number 11,121,216
- Issue date Sep 14, 2021
- Transphorm Technology, Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral III-nitride devices including a vertical gate module
- Patent number 10,756,207
- Issue date Aug 25, 2020
- Transphorm Technology, Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride devices including a graded depleting layer
- Patent number 10,629,681
- Issue date Apr 21, 2020
- Transphorm Technology, Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-mode III-nitride devices
- Patent number 10,535,763
- Issue date Jan 14, 2020
- Transphorm Inc.
- Rakesh K. Lal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride devices including a graded depleting layer
- Patent number 10,224,401
- Issue date Mar 5, 2019
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming reverse side engineered III-nitride devices
- Patent number 10,199,217
- Issue date Feb 5, 2019
- Transphorm Inc.
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-mode III-nitride devices
- Patent number 10,043,898
- Issue date Aug 7, 2018
- Transphorm Inc.
- Rakesh K. Lal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-Nitride transistor including a III-N depleting layer
- Patent number 10,043,896
- Issue date Aug 7, 2018
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming enhancement mode III-nitride devices
- Patent number 9,935,190
- Issue date Apr 3, 2018
- Transphorm Inc.
- Mo Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride transistor including a p-type depleting layer
- Patent number 9,842,922
- Issue date Dec 12, 2017
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-mode III-nitride devices
- Patent number 9,590,060
- Issue date Mar 7, 2017
- Transphorm Inc.
- Rakesh K. Lal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming reverse side engineered III-nitride devices
- Patent number 9,496,137
- Issue date Nov 15, 2016
- Transphorm Inc.
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride transistor including a p-type depleting layer
- Patent number 9,443,938
- Issue date Sep 13, 2016
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming enhancement mode III-nitride devices
- Patent number 9,318,593
- Issue date Apr 19, 2016
- Transphorm Inc.
- Mo Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N device structures and methods
- Patent number 9,224,671
- Issue date Dec 29, 2015
- Transphorm Inc.
- Primit Parikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming electronic components with increased reliability
- Patent number 9,171,836
- Issue date Oct 27, 2015
- Transphorm Inc.
- Rakesh K. Lal
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Enhancement-mode III-nitride devices
- Patent number 9,087,718
- Issue date Jul 21, 2015
- Transphorm Inc.
- Rakesh K. Lal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N device structures and methods
- Patent number 8,895,421
- Issue date Nov 25, 2014
- Transphorm Inc.
- Primit Parikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming electronic components with increased reliability
- Patent number 8,860,495
- Issue date Oct 14, 2014
- Transphorm Inc.
- Rakesh K. Lal
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
III-N device structures and methods
- Patent number 8,643,062
- Issue date Feb 4, 2014
- Transphorm Inc.
- Primit Parikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power semiconductor electronic components with increased relia...
- Patent number 8,598,937
- Issue date Dec 3, 2013
- Transphorm Inc.
- Rakesh K. Lal
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Reverse side engineered III-nitride devices
- Patent number 8,389,977
- Issue date Mar 5, 2013
- Transphorm Inc.
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated electrodes for electrolysis and electrosynthesis
- Patent number 8,147,659
- Issue date Apr 3, 2012
- The Regents of the University of California
- Rakesh K. Lal
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

Patents Applicationslast 30 patents

Information Patent Application
III-NITRIDE DEVICES WITH THROUGH-VIA STRUCTURES
- Publication number 20230335464
- Publication date Oct 19, 2023
- Transphorm Technology, Inc.
- Geetak Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE DEVICES INCLUDING A DEPLETING LAYER
- Publication number 20230299190
- Publication date Sep 21, 2023
- Transphorm Technology, Inc.
- Davide Bisi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-POLAR DEVICES INCLUDING A DEPLETING LAYER WITH IMPROVED CONDUCTIVITY
- Publication number 20220157981
- Publication date May 19, 2022
- Transphorm Technology, Inc.
- Geetak Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT MODE III-NITRIDE DEVICES HAVING AN AL1-XSIXO GATE INSUL...
- Publication number 20210043750
- Publication date Feb 11, 2021
- Transphorm Technology, Inc.
- Carl Joseph Neufeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL III-NITRIDE DEVICES INCLUDING A VERTICAL GATE MODULE
- Publication number 20200343375
- Publication date Oct 29, 2020
- Transphorm Technology, Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE DEVICES INCLUDING A GRADED DEPLETING LAYER
- Publication number 20200212180
- Publication date Jul 2, 2020
- Transphorm Technology, Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL III-NITRIDE DEVICES INCLUDING A VERTICAL GATE MODULE
- Publication number 20200119179
- Publication date Apr 16, 2020
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE DEVICES INCLUDING A GRADED DEPLETING LAYER
- Publication number 20190198615
- Publication date Jun 27, 2019
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE III-NITRIDE DEVICES
- Publication number 20180315843
- Publication date Nov 1, 2018
- TRANSPHORM INC.
- Rakesh K. Lal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE DEVICES INCLUDING A GRADED DEPLETING LAYER
- Publication number 20180158909
- Publication date Jun 7, 2018
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE TRANSISTOR INCLUDING A III-N DEPLETING LAYER
- Publication number 20180102425
- Publication date Apr 12, 2018
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE III-NITRIDE DEVICES
- Publication number 20170162684
- Publication date Jun 8, 2017
- TRANSPHORM INC.
- Rakesh K. Lal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING REVERSE SIDE ENGINEERED III-NITRIDE DEVICES
- Publication number 20170025267
- Publication date Jan 26, 2017
- TRANSPHORM INC.
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE TRANSISTOR INCLUDING A P-TYPE DEPLETING LAYER
- Publication number 20160343840
- Publication date Nov 24, 2016
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING ENHANCEMENT MODE III-NITRIDE DEVICES
- Publication number 20160190298
- Publication date Jun 30, 2016
- TRANSPHORM INC.
- Mo Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING ENHANCEMENT MODE III-NITRIDE DEVICES
- Publication number 20160020313
- Publication date Jan 21, 2016
- TRANSPHORM INC.
- Mo Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE III-NITRIDE DEVICES
- Publication number 20150263112
- Publication date Sep 17, 2015
- TRANSPHORM INC.
- Rakesh K. Lal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N DEVICE STRUCTURES AND METHODS
- Publication number 20150041861
- Publication date Feb 12, 2015
- TRANSPHORM INC.
- Primit Parikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE TRANSISTOR INCLUDING A P-TYPE DEPLETING LAYER
- Publication number 20150021552
- Publication date Jan 22, 2015
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING ELECTRONIC COMPONENTS WITH INCREASED RELIABILITY
- Publication number 20140377930
- Publication date Dec 25, 2014
- Rakesh K. Lal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE III-NITRIDE DEVICES
- Publication number 20140264431
- Publication date Sep 18, 2014
- Rakesh K. Lal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N Device Structures and Methods
- Publication number 20140099757
- Publication date Apr 10, 2014
- TRANSPHORM INC.
- Primit Parikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING ELECTRONIC COMPONENTS WITH INCREASED RELIABILITY
- Publication number 20140094010
- Publication date Apr 3, 2014
- TRANSPHORM INC.
- Rakesh L. Lal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING REVERSE SIDE ENGINEERED III-NITRIDE DEVICES
- Publication number 20130210220
- Publication date Aug 15, 2013
- TRANSPHORM INC.
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compact electric appliance for providing gas for combustion
- Publication number 20130140189
- Publication date Jun 6, 2013
- Transphorm, Inc.
- Umesh Mishra
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
HIGH POWER SEMICONDUCTOR ELECTRONIC COMPONENTS WITH INCREASED RELIA...
- Publication number 20130088280
- Publication date Apr 11, 2013
- TRANSPHORM INC.
- Rakesh K. Lal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE SIDE ENGINEERED III-NITRIDE DEVICES
- Publication number 20110140172
- Publication date Jun 16, 2011
- TRANSPHORM INC.
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compact electric appliance for providing gas for combustion
- Publication number 20090145771
- Publication date Jun 11, 2009
- Transphorm, Inc.
- Umesh Mishra
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Compact electric appliance providing hydrogen injection for improve...
- Publication number 20090134041
- Publication date May 28, 2009
- Transphorm, Inc.
- Umesh Mishra
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
GATED ELECTRODES FOR ELECTROLYSIS AND ELECTROSYNTHESIS
- Publication number 20080116080
- Publication date May 22, 2008
- The Regents of the University of California
- Rakesh K. Lal
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR

Rakesh K. Lal

Person

Patents Grantslast 30 patents

N-polar devices including a depleting layer with improved conductivity

Enhancement mode III-nitride devices having an Al1-xSixO gate insul...

III-nitride devices including a graded depleting layer

Lateral III-nitride devices including a vertical gate module

III-nitride devices including a graded depleting layer

Enhancement-mode III-nitride devices

III-nitride devices including a graded depleting layer

Methods of forming reverse side engineered III-nitride devices

Enhancement-mode III-nitride devices

III-Nitride transistor including a III-N depleting layer

Forming enhancement mode III-nitride devices

III-nitride transistor including a p-type depleting layer

Enhancement-mode III-nitride devices

Methods of forming reverse side engineered III-nitride devices

III-nitride transistor including a p-type depleting layer

Forming enhancement mode III-nitride devices

III-N device structures and methods

Method of forming electronic components with increased reliability

Enhancement-mode III-nitride devices

III-N device structures and methods

Method of forming electronic components with increased reliability

III-N device structures and methods

High power semiconductor electronic components with increased relia...

Reverse side engineered III-nitride devices

Gated electrodes for electrolysis and electrosynthesis

Patents Applicationslast 30 patents

III-NITRIDE DEVICES WITH THROUGH-VIA STRUCTURES

III-NITRIDE DEVICES INCLUDING A DEPLETING LAYER

N-POLAR DEVICES INCLUDING A DEPLETING LAYER WITH IMPROVED CONDUCTIVITY

ENHANCEMENT MODE III-NITRIDE DEVICES HAVING AN AL1-XSIXO GATE INSUL...

LATERAL III-NITRIDE DEVICES INCLUDING A VERTICAL GATE MODULE

III-NITRIDE DEVICES INCLUDING A GRADED DEPLETING LAYER

LATERAL III-NITRIDE DEVICES INCLUDING A VERTICAL GATE MODULE

III-NITRIDE DEVICES INCLUDING A GRADED DEPLETING LAYER

ENHANCEMENT-MODE III-NITRIDE DEVICES

III-NITRIDE DEVICES INCLUDING A GRADED DEPLETING LAYER

III-NITRIDE TRANSISTOR INCLUDING A III-N DEPLETING LAYER

ENHANCEMENT-MODE III-NITRIDE DEVICES

METHODS OF FORMING REVERSE SIDE ENGINEERED III-NITRIDE DEVICES

III-NITRIDE TRANSISTOR INCLUDING A P-TYPE DEPLETING LAYER

FORMING ENHANCEMENT MODE III-NITRIDE DEVICES

FORMING ENHANCEMENT MODE III-NITRIDE DEVICES

ENHANCEMENT-MODE III-NITRIDE DEVICES

III-N DEVICE STRUCTURES AND METHODS

III-NITRIDE TRANSISTOR INCLUDING A P-TYPE DEPLETING LAYER

METHOD OF FORMING ELECTRONIC COMPONENTS WITH INCREASED RELIABILITY

ENHANCEMENT-MODE III-NITRIDE DEVICES

III-N Device Structures and Methods

METHOD OF FORMING ELECTRONIC COMPONENTS WITH INCREASED RELIABILITY

METHODS OF FORMING REVERSE SIDE ENGINEERED III-NITRIDE DEVICES

Compact electric appliance for providing gas for combustion

HIGH POWER SEMICONDUCTOR ELECTRONIC COMPONENTS WITH INCREASED RELIA...

REVERSE SIDE ENGINEERED III-NITRIDE DEVICES

Compact electric appliance for providing gas for combustion

Compact electric appliance providing hydrogen injection for improve...

GATED ELECTRODES FOR ELECTROLYSIS AND ELECTROSYNTHESIS