Ranbir Singh

Person

Gaithersburg, MD, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method to reduce trench capacitor leakage for random access memory...
- Patent number 8,367,497
- Issue date Feb 5, 2013
- Agere Systems LLC
- Nace M. Rossi
Information Patent Grant
Power switching transistors
- Patent number 7,982,239
- Issue date Jul 19, 2011
- Northrop Grumman Corporation
- Ty R. McNutt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing degradation of SiC bipolar semiconductor devices
- Patent number 7,880,171
- Issue date Feb 1, 2011
- Cree, Inc.
- Joseph J. Sumakeris
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method, apparatus, material, and system of using a high gain avalan...
- Patent number 7,843,030
- Issue date Nov 30, 2010
- Ranbir Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for hot carrier programmed one time programmab...
- Patent number 7,764,541
- Issue date Jul 27, 2010
- Agere Systems Inc.
- Ross Alan Kohler
- G11 - INFORMATION STORAGE
Information Patent Grant
Lateral epitaxial GaN metal insulator semiconductor field effect tr...
- Patent number 7,449,762
- Issue date Nov 11, 2008
- Wide Bandgap LLC
- Ranbir Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing degradation of SiC bipolar semiconductor devices
- Patent number 7,427,326
- Issue date Sep 23, 2008
- Cree, Inc.
- Joseph J. Sumakeris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation structure and method of manufacture therefor
- Patent number 7,279,393
- Issue date Oct 9, 2007
- Agere Systems Inc.
- Arun Nanda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral super junction field effect transistor
- Patent number 7,205,629
- Issue date Apr 17, 2007
- WidebandGap LLC
- Ranbir Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral power diodes
- Patent number 7,105,875
- Issue date Sep 12, 2006
- Wide bandgap, LLC
- Ranbir Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral channel transistor
- Patent number 7,026,669
- Issue date Apr 11, 2006
- Ranbir Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral drift vertical metal-insulator semiconductor field effect t...
- Patent number 7,019,344
- Issue date Mar 28, 2006
- Ranbir Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for programming a one-time programmable memory...
- Patent number 7,002,829
- Issue date Feb 21, 2006
- Agere Systems Inc.
- Ranbir Singh
- G11 - INFORMATION STORAGE
Information Patent Grant
SILICON CARBIDE POWER METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSI...
- Patent number 6,956,238
- Issue date Oct 18, 2005
- Cree, Inc.
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing degradation of SiC bipolar semiconductor devices
- Patent number 6,849,874
- Issue date Feb 1, 2005
- Cree, Inc.
- Joseph J. Sumakeris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for DC and RF shielding of integrated circuits
- Patent number 6,844,236
- Issue date Jan 18, 2005
- Agere Systems Inc.
- Tony G. Ivanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial edge termination for silicon carbide Schottky devices and...
- Patent number 6,673,662
- Issue date Jan 6, 2004
- Cree, Inc.
- Ranbir Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low voltage flash EEPROM memory cell with improved data retention
- Patent number 6,661,705
- Issue date Dec 9, 2003
- Agere Systems Inc.
- Richard J. McPartland
- G11 - INFORMATION STORAGE
Information Patent Grant
Silicon carbide inversion channel mosfets
- Patent number 6,653,659
- Issue date Nov 25, 2003
- Cree, Inc.
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a metal gate with a work function compa...
- Patent number 6,579,775
- Issue date Jun 17, 2003
- Agere Systems Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a metal gate with a work function compa...
- Patent number 6,573,149
- Issue date Jun 3, 2003
- Agere Systems Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial edge termination for silicon carbide Schottky devices and...
- Patent number 6,573,128
- Issue date Jun 3, 2003
- Cree, Inc.
- Ranbir Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory device having a bipolar transistor formed integral the...
- Patent number 6,555,871
- Issue date Apr 29, 2003
- Agere Systems Inc.
- Yih-Feng Chyan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low voltage flash EEPROM memory cell with improved data retention
- Patent number 6,552,931
- Issue date Apr 22, 2003
- Agere Systems Inc.
- Richard J. McPartland
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile semiconductor memory cell utilizing trapped charge gen...
- Patent number 6,528,845
- Issue date Mar 4, 2003
- Lucent Technologies Inc.
- Jeffrey D. Bude
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory semiconductor device including a graded, grown,...
- Patent number 6,521,496
- Issue date Feb 18, 2003
- Lucent Technologies Inc.
- Kumar Pradip Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell having channel initiated secondary electro...
- Patent number 6,512,700
- Issue date Jan 28, 2003
- Agere Systems Inc.
- Richard Joseph McPartland
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory semiconductor device including a graded, grown,...
- Patent number 6,509,230
- Issue date Jan 21, 2003
- Lucent Technologies Inc.
- Kumar Pradip Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory cell array with shared erase device
- Patent number 6,459,615
- Issue date Oct 1, 2002
- Agere Systems Guardian Corp.
- Richard Joseph McPartland
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of fabricating silicon carbide inversion channel devices wi...
- Patent number 6,429,041
- Issue date Aug 6, 2002
- Cree, Inc.
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD TO REDUCE TRENCH CAPACITOR LEAKAGE FOR RANDOM ACCESS MEMORY...
- Publication number 20100264478
- Publication date Oct 21, 2010
- Agere Systems Inc.
- Nace M. Rossi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power switching transistors
- Publication number 20080308838
- Publication date Dec 18, 2008
- Ty R. McNutt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method, Apparatus, Material, and System of Using a High Gain Avalan...
- Publication number 20080230862
- Publication date Sep 25, 2008
- Ranbir Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method And Apparatus For Hot Carrier Programmed One Time Programmab...
- Publication number 20070274126
- Publication date Nov 29, 2007
- Ross Alan Kohler
- G11 - INFORMATION STORAGE
Information Patent Application
Minimizing Degradation of SiC Bipolar Semiconductor Devices
- Publication number 20070117336
- Publication date May 24, 2007
- Cree, Inc.
- Joseph J. Sumakeris
- C30 - CRYSTAL GROWTH
Information Patent Application
Trench isolation structure and method of manufacture therefor
- Publication number 20060068562
- Publication date Mar 30, 2006
- Agere Systems Inc.
- Arun Nanda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral power diodes
- Publication number 20050280114
- Publication date Dec 22, 2005
- Ranbir Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral drift vertical metal-insulator semiconductor field effect t...
- Publication number 20050269633
- Publication date Dec 8, 2005
- Ranbir Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Voltage booster transistor
- Publication number 20050269660
- Publication date Dec 8, 2005
- Ranbir Singh
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Lateral channel transistor
- Publication number 20050269661
- Publication date Dec 8, 2005
- Ranbir Singh
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Minimizing degradation of SiC bipolar semiconductor devices
- Publication number 20050116234
- Publication date Jun 2, 2005
- Joseph J. Sumakeris
- C30 - CRYSTAL GROWTH
Information Patent Application
Minimizing degradation of SiC bipolar semiconductor devices
- Publication number 20050118746
- Publication date Jun 2, 2005
- Joseph J. Sumakeris
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus and method for programming a one-time programmable memory...
- Publication number 20050070052
- Publication date Mar 31, 2005
- Ranbir Singh
- G11 - INFORMATION STORAGE
Information Patent Application
SRAM cell with reduced standby leakage current and method for formi...
- Publication number 20030218218
- Publication date Nov 27, 2003
- Samir Chaudhry
- G11 - INFORMATION STORAGE
Information Patent Application
Minimizing degradation of SiC bipolar semiconductor devices
- Publication number 20030080842
- Publication date May 1, 2003
- Joseph J. Sumakeris
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial edge termination for silicon carbide Schottky devices and...
- Publication number 20030045045
- Publication date Mar 6, 2003
- Ranbir Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for DC and RF shielding of integrated circuits
- Publication number 20030015772
- Publication date Jan 23, 2003
- Tony G. Ivanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide inversion channel mosfets
- Publication number 20020149022
- Publication date Oct 17, 2002
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a metal gate with a work function compa...
- Publication number 20020086491
- Publication date Jul 4, 2002
- Lucent Technologies Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a metal gate with a work function compa...
- Publication number 20020048893
- Publication date Apr 25, 2002
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide power metal-oxide semiconductor field effect transi...
- Publication number 20020038891
- Publication date Apr 4, 2002
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low voltage flash EEPROM memory cell with improved data retention
- Publication number 20020015327
- Publication date Feb 7, 2002
- Agere Systems Guardian Corp.
- Richard J. McPartland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned bipolar junction silicon carbide transistors
- Publication number 20010011729
- Publication date Aug 9, 2001
- Ranbir Singh
- H01 - BASIC ELECTRIC ELEMENTS

Ranbir Singh

Person

Patents Grantslast 30 patents

Method to reduce trench capacitor leakage for random access memory...

Power switching transistors

Minimizing degradation of SiC bipolar semiconductor devices

Method, apparatus, material, and system of using a high gain avalan...

Method and apparatus for hot carrier programmed one time programmab...

Lateral epitaxial GaN metal insulator semiconductor field effect tr...

Minimizing degradation of SiC bipolar semiconductor devices

Trench isolation structure and method of manufacture therefor

Lateral super junction field effect transistor

Lateral power diodes

Lateral channel transistor

Lateral drift vertical metal-insulator semiconductor field effect t...

Apparatus and method for programming a one-time programmable memory...

SILICON CARBIDE POWER METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSI...

Minimizing degradation of SiC bipolar semiconductor devices

Method and structure for DC and RF shielding of integrated circuits

Epitaxial edge termination for silicon carbide Schottky devices and...

Low voltage flash EEPROM memory cell with improved data retention

Silicon carbide inversion channel mosfets

Semiconductor device having a metal gate with a work function compa...

Semiconductor device having a metal gate with a work function compa...

Epitaxial edge termination for silicon carbide Schottky devices and...

Flash memory device having a bipolar transistor formed integral the...

Low voltage flash EEPROM memory cell with improved data retention

Non-volatile semiconductor memory cell utilizing trapped charge gen...

Non-volatile memory semiconductor device including a graded, grown,...

Non-volatile memory cell having channel initiated secondary electro...

Non-volatile memory semiconductor device including a graded, grown,...

Non-volatile memory cell array with shared erase device

Methods of fabricating silicon carbide inversion channel devices wi...

Patents Applicationslast 30 patents

METHOD TO REDUCE TRENCH CAPACITOR LEAKAGE FOR RANDOM ACCESS MEMORY...

Power switching transistors

Method, Apparatus, Material, and System of Using a High Gain Avalan...

Method And Apparatus For Hot Carrier Programmed One Time Programmab...

Minimizing Degradation of SiC Bipolar Semiconductor Devices

Trench isolation structure and method of manufacture therefor

Lateral power diodes

Lateral drift vertical metal-insulator semiconductor field effect t...

Voltage booster transistor

Lateral channel transistor

Minimizing degradation of SiC bipolar semiconductor devices

Minimizing degradation of SiC bipolar semiconductor devices

Apparatus and method for programming a one-time programmable memory...

SRAM cell with reduced standby leakage current and method for formi...

Minimizing degradation of SiC bipolar semiconductor devices

Epitaxial edge termination for silicon carbide Schottky devices and...

Method and structure for DC and RF shielding of integrated circuits

Silicon carbide inversion channel mosfets

Semiconductor device having a metal gate with a work function compa...

Semiconductor device having a metal gate with a work function compa...

Silicon carbide power metal-oxide semiconductor field effect transi...

Low voltage flash EEPROM memory cell with improved data retention

Self-aligned bipolar junction silicon carbide transistors