Robert Beach

Person

La Crescenta, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Cascaded bootstrapping GaN power switch and driver
- Patent number 10,790,811
- Issue date Sep 29, 2020
- Efficient Power Conversion Corporation
- Edward Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-mode GaN transistor with selective and nonselective etc...
- Patent number 10,622,455
- Issue date Apr 14, 2020
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with back surface isolation
- Patent number 10,600,674
- Issue date Mar 24, 2020
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN transistors with polysilicon layers used for creating additiona...
- Patent number 10,312,260
- Issue date Jun 4, 2019
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with back surface isolation
- Patent number 10,312,131
- Issue date Jun 4, 2019
- Efficient Power Converson Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-step surface passivation structures and methods for fabricati...
- Patent number 10,096,702
- Issue date Oct 9, 2018
- Efficient Power Conversion Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flip chip interconnection with reduced current density
- Patent number 10,090,274
- Issue date Oct 2, 2018
- Efficient Power Conversion Corporation
- Robert Strittmatter
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Fabrication of semiconductor device using alternating high and low...
- Patent number 9,911,600
- Issue date Mar 6, 2018
- Infineon Technologies Americas Corp.
- Paul Bridger
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN transistors with polysilicon layers used for creating additiona...
- Patent number 9,837,438
- Issue date Dec 5, 2017
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride power semiconductor with a field relaxation feature
- Patent number 9,640,649
- Issue date May 2, 2017
- Infineon Technologies Americas Corp.
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with back surface isolation
- Patent number 9,607,876
- Issue date Mar 28, 2017
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with matching threshold voltages and method for...
- Patent number 9,583,480
- Issue date Feb 28, 2017
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance III-nitride power device
- Patent number 9,472,626
- Issue date Oct 18, 2016
- Infineon Technologies Americas Corp.
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN device with reduced output capacitance and process for making same
- Patent number 9,331,191
- Issue date May 3, 2016
- Efficient Power Conversion Corporation
- Stephen L. Colino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN transistors with polysilicon layers for creating additional com...
- Patent number 9,214,461
- Issue date Dec 15, 2015
- Efficient Power Coversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with matching threshold voltages and method for...
- Patent number 9,214,399
- Issue date Dec 15, 2015
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate self-aligned isolation in gallium nitride devic...
- Patent number 9,214,528
- Issue date Dec 15, 2015
- Efficient Power Conversion Corporation
- Chunhua Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure in gallium nitride devices and integrated circuits
- Patent number 9,171,911
- Issue date Oct 27, 2015
- Efficient Power Conversion Corporation
- Chunhua Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacture of super lattice using alternating high and...
- Patent number 9,157,169
- Issue date Oct 13, 2015
- International Rectifier Corporation
- Paul Bridger
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-nitride monolithic IC
- Patent number 9,142,637
- Issue date Sep 22, 2015
- International Rectifier Corporation
- Robert Beach
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Fabrication of III-nitride semiconductor device and related structures
- Patent number 9,117,671
- Issue date Aug 25, 2015
- International Rectifier Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride heterojunction device
- Patent number 9,000,486
- Issue date Apr 7, 2015
- International Rectifier Corporation
- Paul Bridger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode gallium nitride transistor with improved gate char...
- Patent number 8,969,918
- Issue date Mar 3, 2015
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride power device
- Patent number 8,952,352
- Issue date Feb 10, 2015
- International Rectifier Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a III-nitride semiconductor device
- Patent number 8,940,567
- Issue date Jan 27, 2015
- International Rectifier Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride heterojunction device
- Patent number 8,916,908
- Issue date Dec 23, 2014
- International Rectifier Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode GaN HEMT device
- Patent number 8,890,168
- Issue date Nov 18, 2014
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode III-nitride FET
- Patent number 8,871,581
- Issue date Oct 28, 2014
- International Rectifier Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of III-nitride semiconductor device and related structures
- Patent number 8,865,575
- Issue date Oct 21, 2014
- International Rectifier Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implanted and self aligned gate structure for GaN transistors
- Patent number 8,853,749
- Issue date Oct 7, 2014
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GaN TRANSISTOR HAVING MULTI-THICKNESS FRONT BARRIER
- Publication number 20240413205
- Publication date Dec 12, 2024
- Efficient Power Conversion Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN DEVICE WITH HOLE ELIMINATION CENTERS
- Publication number 20240274681
- Publication date Aug 15, 2024
- Efficient Power Conversion Corporation
- Robert Strittmatter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL GaN FET WITH SINGLE GATE
- Publication number 20230111542
- Publication date Apr 13, 2023
- Efficient Power Conversion Corporation
- Wen-Chia Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CASCADED BOOTSTRAPPING GaN POWER SWITCH AND DRIVER
- Publication number 20200076415
- Publication date Mar 5, 2020
- Efficient Power Conversion Corporation
- Edward Lee
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
- Publication number 20190252238
- Publication date Aug 15, 2019
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE GaN TRANSISTOR WITH SELECTIVE AND NONSELECTIVE ET...
- Publication number 20180366559
- Publication date Dec 20, 2018
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STEP SURFACE PASSIVATION STRUCTURES AND METHODS FOR FABRICATI...
- Publication number 20170352754
- Publication date Dec 7, 2017
- Efficient Power Conversion Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONA...
- Publication number 20170330898
- Publication date Nov 16, 2017
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
- Publication number 20170162429
- Publication date Jun 8, 2017
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR...
- Publication number 20160111416
- Publication date Apr 21, 2016
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONA...
- Publication number 20160086980
- Publication date Mar 24, 2016
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of Semiconductor Device Using Alternating High and Low...
- Publication number 20160027643
- Publication date Jan 28, 2016
- Infineon Technologies Americas Corp.
- Paul Bridger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of III-Nitride Power Semiconductor Device
- Publication number 20150357182
- Publication date Dec 10, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLIP CHIP INTERCONNECTION WITH REDUCED CURRENT DENSITY
- Publication number 20150270241
- Publication date Sep 24, 2015
- Efficient Power Conversion Corporation
- ROBERT STRITTMATTER
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
High Performance III-Nitride Power Device
- Publication number 20150171172
- Publication date Jun 18, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Semiconductor Device Fabrication
- Publication number 20150132933
- Publication date May 14, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of III-Nitride Semiconductor Device and Related Structures
- Publication number 20150037965
- Publication date Feb 5, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR...
- Publication number 20150034962
- Publication date Feb 5, 2015
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COM...
- Publication number 20150028384
- Publication date Jan 29, 2015
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME
- Publication number 20150028390
- Publication date Jan 29, 2015
- Efficient Power Conversion Corporation
- Stephen L. Colino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
- Publication number 20150008442
- Publication date Jan 8, 2015
- Efficient Power Conversion Corporation
- Chunhua Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVIC...
- Publication number 20150011057
- Publication date Jan 8, 2015
- Efficient Power Conversion Corporation
- Chunhua Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Heterojunction Device
- Publication number 20140264373
- Publication date Sep 18, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of III-Nitride Semiconductor Device and Related Structures
- Publication number 20140106548
- Publication date Apr 17, 2014
- International Rectifier Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Wafer Fabrication
- Publication number 20140038391
- Publication date Feb 6, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhancement Mode III-Nitride Device
- Publication number 20140030858
- Publication date Jan 30, 2014
- International Rectifier Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Heterojunction Device
- Publication number 20130264579
- Publication date Oct 10, 2013
- International Rectifier Corporation
- Paul Bridger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Heterojunction Device
- Publication number 20130256695
- Publication date Oct 3, 2013
- Paul Bridger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Power Device
- Publication number 20130248884
- Publication date Sep 26, 2013
- INTERNATIONAL RECTIFIER CORPORATION
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Multi-Channel Heterojunction Device
- Publication number 20130240911
- Publication date Sep 19, 2013
- INTERNATIONAL RECTIFIER CORPORATION
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS

Robert Beach

Person

Patents Grantslast 30 patents

Cascaded bootstrapping GaN power switch and driver

Enhancement-mode GaN transistor with selective and nonselective etc...

Semiconductor devices with back surface isolation

GaN transistors with polysilicon layers used for creating additiona...

Semiconductor devices with back surface isolation

Multi-step surface passivation structures and methods for fabricati...

Flip chip interconnection with reduced current density

Fabrication of semiconductor device using alternating high and low...

GaN transistors with polysilicon layers used for creating additiona...

III-nitride power semiconductor with a field relaxation feature

Semiconductor devices with back surface isolation

Integrated circuit with matching threshold voltages and method for...

High performance III-nitride power device

GaN device with reduced output capacitance and process for making same

GaN transistors with polysilicon layers for creating additional com...

Integrated circuit with matching threshold voltages and method for...

Method to fabricate self-aligned isolation in gallium nitride devic...

Isolation structure in gallium nitride devices and integrated circuits

Process for manufacture of super lattice using alternating high and...

III-nitride monolithic IC

Fabrication of III-nitride semiconductor device and related structures

III-nitride heterojunction device

Enhancement mode gallium nitride transistor with improved gate char...

III-nitride power device

Method for fabricating a III-nitride semiconductor device

III-nitride heterojunction device

Enhancement mode GaN HEMT device

Enhancement mode III-nitride FET

Fabrication of III-nitride semiconductor device and related structures

Ion implanted and self aligned gate structure for GaN transistors

Patents Applicationslast 30 patents

GaN TRANSISTOR HAVING MULTI-THICKNESS FRONT BARRIER

GaN DEVICE WITH HOLE ELIMINATION CENTERS

BIDIRECTIONAL GaN FET WITH SINGLE GATE

CASCADED BOOTSTRAPPING GaN POWER SWITCH AND DRIVER

SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION

ENHANCEMENT-MODE GaN TRANSISTOR WITH SELECTIVE AND NONSELECTIVE ET...

MULTI-STEP SURFACE PASSIVATION STRUCTURES AND METHODS FOR FABRICATI...

GaN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONA...

SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION

INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR...

GAN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONA...

Fabrication of Semiconductor Device Using Alternating High and Low...

Fabrication of III-Nitride Power Semiconductor Device

FLIP CHIP INTERCONNECTION WITH REDUCED CURRENT DENSITY

High Performance III-Nitride Power Device

III-Nitride Semiconductor Device Fabrication

Fabrication of III-Nitride Semiconductor Device and Related Structures

INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR...

GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COM...

GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME

ISOLATION STRUCTURE IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS

METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVIC...

III-Nitride Heterojunction Device

Fabrication of III-Nitride Semiconductor Device and Related Structures

III-Nitride Wafer Fabrication

Enhancement Mode III-Nitride Device

III-Nitride Heterojunction Device

III-Nitride Heterojunction Device

III-Nitride Power Device

III-Nitride Multi-Channel Heterojunction Device