Membership
Tour
Register
Log in
ROBERT J. FALSTER
Follow
Person
MILANO, IT
People
Overview
Industries
Organizations
People
Information
Impact
Patents Grants
last 30 patents
Information
Patent Grant
Process for producing low defect density, ideal oxygen precipitatin...
Patent number
6,896,728
Issue date
May 24, 2005
MEMC Electronic Materials, Inc.
Robert J. Falster
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Low defect density regions of self-interstitial dominated silicon
Patent number
6,605,150
Issue date
Aug 12, 2003
MEMC Electronic Materials, Inc.
Robert J. Falster
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Ideal oxygen precipitating silicon wafer having an asymmetrical vac...
Patent number
6,586,068
Issue date
Jul 1, 2003
MEMC Electronic Materials, Inc.
Robert Falster
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Process for producing low defect density, ideal oxygen precipitatin...
Patent number
6,555,194
Issue date
Apr 29, 2003
MEMC Electronic Materials, Inc.
Robert A. Falster
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Process for the preparation of non-oxygen precipitating Czochralski...
Patent number
6,432,197
Issue date
Aug 13, 2002
MEMC Electronic Materials, Inc.
Robert J. Falster
C30 - CRYSTAL GROWTH
Information
Patent Grant
Low defect density silicon and a process for producing low defect d...
Patent number
6,409,827
Issue date
Jun 25, 2002
MEMC Electronic Materials, Inc.
Robert J. Falster
C30 - CRYSTAL GROWTH
Information
Patent Grant
Vacancy dominated, defect-free silicon
Patent number
6,379,642
Issue date
Apr 30, 2002
MEMC Electronic Materials, Inc.
Robert A. Falster
C30 - CRYSTAL GROWTH
Information
Patent Grant
Thermally annealed wafers having improved internal gettering
Patent number
6,361,619
Issue date
Mar 26, 2002
MEMC Electronic Materials, Inc.
Robert J. Falster
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Non-oxygen precipitating czochralski silicon wafers
Patent number
6,336,968
Issue date
Jan 8, 2002
MEMC Electronic Materials, Inc.
Robert J. Falster
C30 - CRYSTAL GROWTH
Information
Patent Grant
Process for growth of defect free silicon crystals of arbitrarily l...
Patent number
6,328,795
Issue date
Dec 11, 2001
MEMC Electronic Materials, Inc.
Robert J. Falster
C30 - CRYSTAL GROWTH
Information
Patent Grant
Low defect density silicon
Patent number
6,287,380
Issue date
Sep 11, 2001
MEMC Electronic Materials, Inc.
Robert J. Falster
C30 - CRYSTAL GROWTH
Information
Patent Grant
Low defect density self-interstitial dominated silicon
Patent number
6,254,672
Issue date
Jul 3, 2001
MEMC Electronic Materials, Inc.
Robert A. Falster
C30 - CRYSTAL GROWTH
Information
Patent Grant
Silicon on insulator structure from low defect density single cryst...
Patent number
6,236,104
Issue date
May 22, 2001
MEMC Electronic Materials, Inc.
Robert J. Falster
C30 - CRYSTAL GROWTH
Information
Patent Grant
Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-...
Patent number
6,204,152
Issue date
Mar 20, 2001
MEMC Electronic Materials, SpA
Robert Falster
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Process for preparing an ideal oxygen precipitating silicon wafer
Patent number
6,191,010
Issue date
Feb 20, 2001
MEMC Electronic Materials, Inc.
Robert J. Falster
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Low defect density, ideal oxygen precipitating silicon
Patent number
6,190,631
Issue date
Feb 20, 2001
MEMC Electronic Materials, Inc.
Robert A. Falster
C30 - CRYSTAL GROWTH
Information
Patent Grant
Ideal Oxygen precipitating silicon wafers and oxygen out-diffusion-...
Patent number
6,180,220
Issue date
Jan 30, 2001
MEMC Electronic Materials, Inc.
Robert Falster
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Process for the removal of copper from polished boron doped silicon...
Patent number
6,100,167
Issue date
Aug 8, 2000
MEMC Electronic Materials, Inc.
Robert J. Falster
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-...
Patent number
5,994,761
Issue date
Nov 30, 1999
MEMC Electronic Materials SpA
Robert Falster
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Low defect density vacancy dominated silicon
Patent number
5,919,302
Issue date
Jul 6, 1999
MEMC Electronic Materials, Inc.
Robert A. Falster
C30 - CRYSTAL GROWTH
Information
Patent Grant
Process for the preparation of silicon wafers having a controlled d...
Patent number
5,882,989
Issue date
Mar 16, 1999
MEMC Electronic Materials, Inc.
Robert Falster
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Process for controlling thermal history of Czochralski-grown silicon
Patent number
5,779,791
Issue date
Jul 14, 1998
MEMC Electronic Materials, Inc.
Harold W. Korb
C30 - CRYSTAL GROWTH
Information
Patent Grant
Precision controlled precipitation of oxygen in silicon
Patent number
5,593,494
Issue date
Jan 14, 1997
MEMC Electronic Materials, Inc.
Robert Falster
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for detecting sources of contamination in silicon using a co...
Patent number
5,418,172
Issue date
May 23, 1995
MEMC Electronic Materials S.p.A.
Robert Falster
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Silicon wafers having controlled precipitation distribution
Patent number
5,403,406
Issue date
Apr 4, 1995
MEMC Electronic Materials, SpA
Robert Falster
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Process for the preparation of silicon wafers having controlled dis...
Patent number
5,401,669
Issue date
Mar 28, 1995
MEMC Electronic Materials, SpA
Robert Falster
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Process for contamination removal and minority carrier lifetime imp...
Patent number
5,272,119
Issue date
Dec 21, 1993
MEMC Electronic Materials, SpA
Robert Falster
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
Process for producing low defect density, ideal oxygen precipitatin...
Publication number
20040025782
Publication date
Feb 12, 2004
MEMC Electronic Materials, Inc.
Robert J. Falster
C30 - CRYSTAL GROWTH
Information
Patent Application
Vacancy, dominsated, defect-free silicon
Publication number
20020078880
Publication date
Jun 27, 2002
MEMC Electronic Materials, Inc.
Robert J. Falster
C30 - CRYSTAL GROWTH
Information
Patent Application
PROCESS FOR GROWTH OF DEFECT FREE SILICON CRYSTALS OF ARBITRARILY L...
Publication number
20010008114
Publication date
Jul 19, 2001
ROBERT J. FALSTER
C30 - CRYSTAL GROWTH
Information
Patent Application
PROCESS FOR PREPARING DEFFECT FREE SILICON CRYSTALS WHICH ALLOWS FO...
Publication number
20010003268
Publication date
Jun 14, 2001
ROBERT J. FALSTER
C30 - CRYSTAL GROWTH