Sagy Charel Levy

Person

Zichron Yaakov, IL

People

Patents Grantslast 30 patents

Information Patent Grant
Memory transistor with multiple charge storing layers and a high wo...
- Patent number 12,009,401
- Issue date Jun 11, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- G11 - INFORMATION STORAGE
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 11,784,243
- Issue date Oct 10, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory transistor with multiple charge storing layers and a high wo...
- Patent number 11,721,733
- Issue date Aug 8, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory transistor with multiple charge storing layers and a high wo...
- Patent number 11,456,365
- Issue date Sep 27, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 11,222,965
- Issue date Jan 11, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Lateral diffused metal oxide semiconductor field effect (LDMOS) tra...
- Patent number 11,127,855
- Issue date Sep 21, 2021
- Tower Semiconductors Ltd.
- Daniel Sherman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory device and method
- Patent number 11,056,565
- Issue date Jul 6, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory transistor with multiple charge storing layers and a high wo...
- Patent number 10,903,325
- Issue date Jan 26, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 10,903,342
- Issue date Jan 26, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Levy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 10,903,068
- Issue date Jan 26, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 10,896,973
- Issue date Jan 19, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Levy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
SONOS ONO stack scaling
- Patent number 10,699,901
- Issue date Jun 30, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Frederick B. Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile charge trap memory device having a high dielectric cons...
- Patent number 10,615,289
- Issue date Apr 7, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Radical oxidation process for fabricating a nonvolatile charge trap...
- Patent number 10,593,812
- Issue date Mar 17, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory transistor with multiple charge storing layers and a high wo...
- Patent number 10,446,656
- Issue date Oct 15, 2019
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory transistor with multiple charge storing layers and a high wo...
- Patent number 10,411,103
- Issue date Sep 10, 2019
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Oxide-nitride-oxide stack having multiple oxynitride layers
- Patent number 10,374,067
- Issue date Aug 6, 2019
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Levy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory transistor with multiple charge storing layers and a high wo...
- Patent number 10,312,336
- Issue date Jun 4, 2019
- Cypress Semiconductor Corporation
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Radical oxidation process for fabricating a nonvolatile charge trap...
- Patent number 10,304,968
- Issue date May 28, 2019
- Cypress Semiconductor Corporation
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Radical oxidation process for fabricating a nonvolatile charge trap...
- Patent number 10,269,985
- Issue date Apr 23, 2019
- Cypress Semiconductor Corporation
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nonvolatile charge trap memory device having a deuterated layer in...
- Patent number 10,263,087
- Issue date Apr 16, 2019
- Cypress Semiconductor Corporation
- Sagy Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus of a metal-oxide-semiconductor (MOS) transistor including...
- Patent number 10,217,826
- Issue date Feb 26, 2019
- Tower Semiconductor Ltd.
- Johnatan A. Kantarovsky
- G05 - CONTROLLING REGULATING
Information Patent Grant
Radical oxidation process for fabricating a nonvolatile charge trap...
- Patent number 10,090,416
- Issue date Oct 2, 2018
- Cypress Semiconductor Corporation
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nonvolatile charge trap memory device having a deuterated layer in...
- Patent number 10,079,314
- Issue date Sep 18, 2018
- Cypress Semiconductor Corporation
- Sagy Charel Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SONOS ONO stack scaling
- Patent number 9,997,641
- Issue date Jun 12, 2018
- Cypress Semiconductor Corporation
- Fredrick B. Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory transistor with multiple charge storing layers and a high wo...
- Patent number 9,929,240
- Issue date Mar 27, 2018
- Cypress Semiconductor Corporation
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory transistor with multiple charge storing layers and a high wo...
- Patent number 9,899,486
- Issue date Feb 20, 2018
- Cypress Semiconductor Corporation
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor die with a metal via
- Patent number 9,837,411
- Issue date Dec 5, 2017
- TOWER SEMICONDUCTORS LTD.
- Sharon Levin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device having a low angle sloped oxide
- Patent number 9,812,566
- Issue date Nov 7, 2017
- TOWER SEMICONDUCTORS LTD.
- Sagy Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-resurf LDMOS with drift and PSURF implants self-aligned to a...
- Patent number 9,806,174
- Issue date Oct 31, 2017
- Tower Semiconductor Ltd.
- Sagy Levy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...
- Publication number 20240332385
- Publication date Oct 3, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers
- Publication number 20240234550
- Publication date Jul 11, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- B82 - NANO-TECHNOLOGY
Information Patent Application
SONOS ONO STACK SCALING
- Publication number 20230074163
- Publication date Mar 9, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Fredrick B. Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...
- Publication number 20230023852
- Publication date Jan 26, 2023
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS
- Publication number 20230017648
- Publication date Jan 19, 2023
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- G11 - INFORMATION STORAGE
Information Patent Application
Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers
- Publication number 20220093773
- Publication date Mar 24, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- B82 - NANO-TECHNOLOGY
Information Patent Application
MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...
- Publication number 20220005929
- Publication date Jan 6, 2022
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS
- Publication number 20210249254
- Publication date Aug 12, 2021
- Sagy Charel Levy
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...
- Publication number 20210217862
- Publication date Jul 15, 2021
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
SONOS ONO STACK SCALING
- Publication number 20210104402
- Publication date Apr 8, 2021
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Fredrick B. Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD EFFECT (LDMOS) TRA...
- Publication number 20200381553
- Publication date Dec 3, 2020
- Tower Semiconductors Ltd.
- Daniel Sherman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE CHARGE TRAP MEMORY DEVICE HAVING A HIGH DIELECTRIC CONS...
- Publication number 20200303563
- Publication date Sep 24, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
RADICAL OXIDATION PROCESS FOR FABRICATING A NONVOLATILE CHARGE TRAP...
- Publication number 20200287056
- Publication date Sep 10, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswamy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Application
RADICAL OXIDATION PROCESS FOR FABRICATING A NONVOLATILE CHARGE TRAP...
- Publication number 20200161478
- Publication date May 21, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Krishnaswarmy Ramkumar
- B82 - NANO-TECHNOLOGY
Information Patent Application
MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...
- Publication number 20200152752
- Publication date May 14, 2020
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers
- Publication number 20200144399
- Publication date May 7, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sagy Charel Levy
- B82 - NANO-TECHNOLOGY
Information Patent Application
MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...
- Publication number 20200013863
- Publication date Jan 9, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
NONVOLATILE CHARGE TRAP MEMORY DEVICE HAVING A DEUTERATED LAYER IN...
- Publication number 20190319104
- Publication date Oct 17, 2019
- Sagy Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS
- Publication number 20180366563
- Publication date Dec 20, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Sagy Levy
- B82 - NANO-TECHNOLOGY
Information Patent Application
OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS
- Publication number 20180366564
- Publication date Dec 20, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Sagy Levy
- B82 - NANO-TECHNOLOGY
Information Patent Application
Radical Oxidation Process For Fabricating A Nonvolatile Charge Trap...
- Publication number 20180351004
- Publication date Dec 6, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SONOS ONO STACK SCALING
- Publication number 20180351003
- Publication date Dec 6, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Fredrick B. Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...
- Publication number 20180158919
- Publication date Jun 7, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
APPARATUS OF A METAL-OXIDE-SEMICONDUCTOR (MOS) TRANSISTOR INCLUDING...
- Publication number 20180145139
- Publication date May 24, 2018
- Tower Semiconductor Ltd.
- Johnatan A. Kantarovsky
- G05 - CONTROLLING REGULATING
Information Patent Application
NONVOLATILE CHARGE TRAP MEMORY DEVICE HAVING A DEUTERATED LAYER IN...
- Publication number 20170352732
- Publication date Dec 7, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Sagy Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...
- Publication number 20170186883
- Publication date Jun 29, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Igor Polishchuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING FOR MEMORY TRANSISTOR WITH MULTIPLE CHARGE...
- Publication number 20170092729
- Publication date Mar 30, 2017
- Igor Polishchuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
NONVOLATILE CHARGE TRAP MEMORY DEVICE HAVING A HIGH DIELECTRIC CONS...
- Publication number 20170092781
- Publication date Mar 30, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Igor Polishchuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE WITH A METAL VIA
- Publication number 20170018503
- Publication date Jan 19, 2017
- Tower Semiconductor Ltd.
- Sharon Levin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-RESURF LDMOS WITH DRIFT AND PSURF IMPLANTS SELF-ALIGNED TO A...
- Publication number 20160372578
- Publication date Dec 22, 2016
- Tower Semiconductor Ltd.
- Sagy Levy
- H01 - BASIC ELECTRIC ELEMENTS

Sagy Charel Levy

Person

Patents Grantslast 30 patents

Memory transistor with multiple charge storing layers and a high wo...

Oxide-nitride-oxide stack having multiple oxynitride layers

Memory transistor with multiple charge storing layers and a high wo...

Memory transistor with multiple charge storing layers and a high wo...

Oxide-nitride-oxide stack having multiple oxynitride layers

Lateral diffused metal oxide semiconductor field effect (LDMOS) tra...

Flash memory device and method

Memory transistor with multiple charge storing layers and a high wo...

Oxide-nitride-oxide stack having multiple oxynitride layers

Oxide-nitride-oxide stack having multiple oxynitride layers

Oxide-nitride-oxide stack having multiple oxynitride layers

SONOS ONO stack scaling

Nonvolatile charge trap memory device having a high dielectric cons...

Radical oxidation process for fabricating a nonvolatile charge trap...

Memory transistor with multiple charge storing layers and a high wo...

Memory transistor with multiple charge storing layers and a high wo...

Oxide-nitride-oxide stack having multiple oxynitride layers

Memory transistor with multiple charge storing layers and a high wo...

Radical oxidation process for fabricating a nonvolatile charge trap...

Radical oxidation process for fabricating a nonvolatile charge trap...

Nonvolatile charge trap memory device having a deuterated layer in...

Apparatus of a metal-oxide-semiconductor (MOS) transistor including...

Radical oxidation process for fabricating a nonvolatile charge trap...

Nonvolatile charge trap memory device having a deuterated layer in...

SONOS ONO stack scaling

Memory transistor with multiple charge storing layers and a high wo...

Memory transistor with multiple charge storing layers and a high wo...

Semiconductor die with a metal via

LDMOS device having a low angle sloped oxide

Double-resurf LDMOS with drift and PSURF implants self-aligned to a...

Patents Applicationslast 30 patents

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers

SONOS ONO STACK SCALING

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

SONOS ONO STACK SCALING

LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD EFFECT (LDMOS) TRA...

NONVOLATILE CHARGE TRAP MEMORY DEVICE HAVING A HIGH DIELECTRIC CONS...

RADICAL OXIDATION PROCESS FOR FABRICATING A NONVOLATILE CHARGE TRAP...

RADICAL OXIDATION PROCESS FOR FABRICATING A NONVOLATILE CHARGE TRAP...

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

NONVOLATILE CHARGE TRAP MEMORY DEVICE HAVING A DEUTERATED LAYER IN...

OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

OXIDE-NITRIDE-OXIDE STACK HAVING MULTIPLE OXYNITRIDE LAYERS

Radical Oxidation Process For Fabricating A Nonvolatile Charge Trap...

SONOS ONO STACK SCALING

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

APPARATUS OF A METAL-OXIDE-SEMICONDUCTOR (MOS) TRANSISTOR INCLUDING...

NONVOLATILE CHARGE TRAP MEMORY DEVICE HAVING A DEUTERATED LAYER IN...

MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WO...

METHOD OF MANUFACTURING FOR MEMORY TRANSISTOR WITH MULTIPLE CHARGE...

NONVOLATILE CHARGE TRAP MEMORY DEVICE HAVING A HIGH DIELECTRIC CONS...

SEMICONDUCTOR DIE WITH A METAL VIA

DOUBLE-RESURF LDMOS WITH DRIFT AND PSURF IMPLANTS SELF-ALIGNED TO A...