Seong-Dong Kim

Person

LaGrangeville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical transistor fabrication and devices
- Patent number 10,727,316
- Issue date Jul 28, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor fabrication and devices
- Patent number 10,622,459
- Issue date Apr 14, 2020
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor fabrication and devices
- Patent number 10,388,757
- Issue date Aug 20, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor fabrication and devices
- Patent number 9,985,115
- Issue date May 29, 2018
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor fabrication and devices
- Patent number 9,941,411
- Issue date Apr 10, 2018
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor fabrication and devices
- Patent number 9,793,374
- Issue date Oct 17, 2017
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistors with merged active area regions
- Patent number 9,761,712
- Issue date Sep 12, 2017
- International Business Machines Corporation
- Brent A. Anderson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Vertical transistor fabrication and devices
- Patent number 9,431,305
- Issue date Aug 30, 2016
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET formation with late fin reveal
- Patent number 9,171,935
- Issue date Oct 27, 2015
- GLOBALFOUNDRIES Inc.
- Seong-Dong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric source/drain junctions for low power silicon on insulato...
- Patent number 8,299,509
- Issue date Oct 30, 2012
- International Business Machines Corporation
- Seong-Dong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of manufacture
- Patent number 8,022,496
- Issue date Sep 20, 2011
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric source/drain junctions for low power silicon on insulato...
- Patent number 7,977,178
- Issue date Jul 12, 2011
- International Business Machines Corporation
- Seong-Dong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual stress STI
- Patent number 7,927,968
- Issue date Apr 19, 2011
- International Business Machines Corporation
- Deok-kee Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming field effect transistors having silicided source...
- Patent number 7,863,201
- Issue date Jan 4, 2011
- Samsung Electronics Co., Ltd.
- Yong-Kuk Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS varactor with segmented gate doping
- Patent number 7,545,007
- Issue date Jun 9, 2009
- International Business Machines Corporation
- Heidi L. Greer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual stress STI
- Patent number 7,521,763
- Issue date Apr 21, 2009
- International Business Machines Corporation
- Deok-kee Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of manufacture
- Patent number 7,329,940
- Issue date Feb 12, 2008
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL TRANSISTOR FABRICATION AND DEVICES
- Publication number 20180226494
- Publication date Aug 9, 2018
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTORS WITH MERGED ACTIVE AREA REGIONS
- Publication number 20180122792
- Publication date May 3, 2018
- International Business Machines Corporation
- Brent A. Anderson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
VERTICAL TRANSISTOR FABRICATION AND DEVICES
- Publication number 20170358689
- Publication date Dec 14, 2017
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR FABRICATION AND DEVICES
- Publication number 20170271481
- Publication date Sep 21, 2017
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR FABRICATION AND DEVICES
- Publication number 20170263781
- Publication date Sep 14, 2017
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR FABRICATION AND DEVICES
- Publication number 20170179303
- Publication date Jun 22, 2017
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR FABRICATION AND DEVICES
- Publication number 20170179259
- Publication date Jun 22, 2017
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Field Effect Transistors Having Silicon-Germaniu...
- Publication number 20160172361
- Publication date Jun 16, 2016
- Hwa-Sung Rhee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET FORMATION WITH LATE FIN REVEAL
- Publication number 20150255569
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Seong-Dong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING FIELD EFFECT TRANSISTORS HAVING SILICON-GERMANIU...
- Publication number 20130149830
- Publication date Jun 13, 2013
- SAMSUNG ELECTRONICS CO., LTD.
- Hwa-Sung RHEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC SOURCE/DRAIN JUNCTIONS FOR LOW POWER SILICON ON INSULATO...
- Publication number 20110180852
- Publication date Jul 28, 2011
- International Business Machines Corporation
- Seong-Dong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC SOURCE/DRAIN JUNCTIONS FOR LOW POWER SILICON ON INSULATO...
- Publication number 20100219450
- Publication date Sep 2, 2010
- International Business Machines Corporation
- Seong-Dong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Semiconductor Devices Using Plasma Dehydrogenati...
- Publication number 20100197124
- Publication date Aug 5, 2010
- SAMSUNG ELECTRONICS CO., LTD.
- Yong-kuk Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Field Effect Transistors Having Silicided Source...
- Publication number 20090239344
- Publication date Sep 24, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Yong Kuk Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Stress STI
- Publication number 20080220587
- Publication date Sep 11, 2008
- International Business Machines Corporation
- Deok-kee Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL STRESS STI
- Publication number 20080157216
- Publication date Jul 3, 2008
- International Business Machines Corporation
- Deok-kee Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SYSTEM EMPLOYING STRAINED TECHNOLOGY
- Publication number 20080157118
- Publication date Jul 3, 2008
- Chartered Semiconductor Manufacturing LTD.
- Jae Gon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20080124883
- Publication date May 29, 2008
- International Business Machines Corporation,
- Douglas D. COOLBAUGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20080099787
- Publication date May 1, 2008
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20070096257
- Publication date May 3, 2007
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS VARACTOR WITH SEGMENTED GATE DOPING
- Publication number 20070029587
- Publication date Feb 8, 2007
- International Business Machines Corporation
- Heidi L. Greer
- H01 - BASIC ELECTRIC ELEMENTS

Seong-Dong Kim

Person

Patents Grantslast 30 patents

Vertical transistor fabrication and devices

Vertical transistor fabrication and devices

Vertical transistor fabrication and devices

Vertical transistor fabrication and devices

Vertical transistor fabrication and devices

Vertical transistor fabrication and devices

Vertical transistors with merged active area regions

Vertical transistor fabrication and devices

FinFET formation with late fin reveal

Asymmetric source/drain junctions for low power silicon on insulato...

Semiconductor structure and method of manufacture

Asymmetric source/drain junctions for low power silicon on insulato...

Dual stress STI

Methods of forming field effect transistors having silicided source...

MOS varactor with segmented gate doping

Dual stress STI

Semiconductor structure and method of manufacture

Patents Applicationslast 30 patents

VERTICAL TRANSISTOR FABRICATION AND DEVICES

VERTICAL TRANSISTORS WITH MERGED ACTIVE AREA REGIONS

VERTICAL TRANSISTOR FABRICATION AND DEVICES

VERTICAL TRANSISTOR FABRICATION AND DEVICES

VERTICAL TRANSISTOR FABRICATION AND DEVICES

VERTICAL TRANSISTOR FABRICATION AND DEVICES

VERTICAL TRANSISTOR FABRICATION AND DEVICES

Methods of Forming Field Effect Transistors Having Silicon-Germaniu...

FinFET FORMATION WITH LATE FIN REVEAL

METHODS OF FORMING FIELD EFFECT TRANSISTORS HAVING SILICON-GERMANIU...

ASYMMETRIC SOURCE/DRAIN JUNCTIONS FOR LOW POWER SILICON ON INSULATO...

ASYMMETRIC SOURCE/DRAIN JUNCTIONS FOR LOW POWER SILICON ON INSULATO...

Methods of Forming Semiconductor Devices Using Plasma Dehydrogenati...

Methods of Forming Field Effect Transistors Having Silicided Source...

Dual Stress STI

DUAL STRESS STI

INTEGRATED CIRCUIT SYSTEM EMPLOYING STRAINED TECHNOLOGY

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

MOS VARACTOR WITH SEGMENTED GATE DOPING