Sharon Shi

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
System and method for substrate wafer back side and edge cross sect...
- Patent number 10,546,750
- Issue date Jan 28, 2020
- Vishay Siliconix
- Hamilton Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET active area and edge termination area charge balance
- Patent number 10,084,037
- Issue date Sep 25, 2018
- Vishay Siliconix
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate semiconductor device with curved gate oxide profile
- Patent number 9,893,168
- Issue date Feb 13, 2018
- Vishay Siliconix
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-low drain-source resistance power MOSFET
- Patent number 9,887,266
- Issue date Feb 6, 2018
- Vishay Siliconix
- The-Tu Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET active area and edge termination area charge balance
- Patent number 9,484,451
- Issue date Nov 1, 2016
- Vishay Siliconix
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction trench power MOSFET device fabrication
- Patent number 9,443,974
- Issue date Sep 13, 2016
- Vishay Siliconix
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-high density trench MOSFET
- Patent number 9,431,530
- Issue date Aug 30, 2016
- Vishay Siliconix
- Robert Q. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction trench power MOSFET devices
- Patent number 9,425,306
- Issue date Aug 23, 2016
- Vishay Siliconix
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate semiconductor device with curved gate oxide profile
- Patent number 9,419,129
- Issue date Aug 16, 2016
- Vishay Siliconix
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for substrate wafer back side and edge cross sect...
- Patent number 9,230,810
- Issue date Jan 5, 2016
- Vishay Siliconix
- Hamilton Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench metal oxide semiconductor with recessed trench material and...
- Patent number 8,883,580
- Issue date Nov 11, 2014
- Vishay Siliconix
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-low drain-source resistance power MOSFET
- Patent number 8,409,954
- Issue date Apr 2, 2013
- Vishay-Silconix
- The-Tu Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench metal oxide semiconductor with recessed trench material and...
- Patent number 8,368,126
- Issue date Feb 5, 2013
- Vishay Siliconix
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super trench MOSFET including buried source e...
- Patent number 7,704,836
- Issue date Apr 27, 2010
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super trench MOSFET including buried source electrode
- Patent number 7,557,409
- Issue date Jul 7, 2009
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super trench MOSFET including buried source electrode and method of...
- Patent number 7,183,610
- Issue date Feb 27, 2007
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MOSFET ACTIVE AREA AND EDGE TERMINATION AREA CHARGE BALANCE
- Publication number 20170117354
- Publication date Apr 27, 2017
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE SEMICONDUCTOR DEVICE WITH CURVED GATE OXIDE PROFILE
- Publication number 20160359018
- Publication date Dec 8, 2016
- VISHAY-SILICONIX
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR SUBSTRATE WAFER BACK SIDE AND EDGE CROSS SECT...
- Publication number 20160225622
- Publication date Aug 4, 2016
- VISHAY-SILICONIX
- Hamilton LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH METAL OXIDE SEMICONDUCTOR WITH RECESSED TRENCH MATERIAL AND...
- Publication number 20140235023
- Publication date Aug 21, 2014
- VISHAY-SILICONIX
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A HYBRID SPLIT GATE SIMICONDUCTOR
- Publication number 20120220092
- Publication date Aug 30, 2012
- VISHAY-SILICONIX
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID SPLIT GATE SEMICONDUCTOR
- Publication number 20120211828
- Publication date Aug 23, 2012
- VISHAY-SILICONIX
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE SEMICONDUCTOR DEVICE WITH CURVED GATE OXIDE PROFILE
- Publication number 20110089485
- Publication date Apr 21, 2011
- VISHAY-SILICONIX
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-HIGH DENSITY TRENCH MOSFET
- Publication number 20110089486
- Publication date Apr 21, 2011
- VISHAY-SILICONIX
- Robert Q. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR SUBSTRATE WAFER BACK SIDE AND EDGE CROSS SECT...
- Publication number 20110049682
- Publication date Mar 3, 2011
- VISHAY-SILICONIX
- Hamilton Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION TRENCH POWER MOSFET DEVICES
- Publication number 20110049614
- Publication date Mar 3, 2011
- VISHAY-SILICONIX
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION TRENCH POWER MOSFET DEVICE FABRICATION
- Publication number 20110053326
- Publication date Mar 3, 2011
- VISHAY-SILICONIX
- Yang Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating super trench MOSFET including buried source e...
- Publication number 20100019316
- Publication date Jan 28, 2010
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET ACTIVE AREA AND EDGE TERMINATION AREA CHARGE BALANCE
- Publication number 20090090967
- Publication date Apr 9, 2009
- VISHAY-SILICONIX
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH METAL OXIDE SEMICONDUCTOR WITH RECESSED TRENCH MATERIAL AND...
- Publication number 20080258212
- Publication date Oct 23, 2008
- VISHAY-SILICONIX
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating super trench MOSFET including buried source e...
- Publication number 20080182376
- Publication date Jul 31, 2008
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra-low drain-source resistance power MOSFET
- Publication number 20080157281
- Publication date Jul 3, 2008
- The-Tu Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra-low drain-source resistance power MOSFET
- Publication number 20070221989
- Publication date Sep 27, 2007
- The-Tu Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super trench MOSFET including buried source electrode and method of...
- Publication number 20070187753
- Publication date Aug 16, 2007
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super trench MOSFET including buried source electrode and method of...
- Publication number 20050242392
- Publication date Nov 3, 2005
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

System and method for substrate wafer back side and edge cross sect...

MOSFET active area and edge termination area charge balance

Split gate semiconductor device with curved gate oxide profile

Ultra-low drain-source resistance power MOSFET

MOSFET active area and edge termination area charge balance

Super junction trench power MOSFET device fabrication

Super-high density trench MOSFET

Super junction trench power MOSFET devices

Split gate semiconductor device with curved gate oxide profile

System and method for substrate wafer back side and edge cross sect...

Trench metal oxide semiconductor with recessed trench material and...

Ultra-low drain-source resistance power MOSFET

Trench metal oxide semiconductor with recessed trench material and...

Method of fabricating super trench MOSFET including buried source e...

Super trench MOSFET including buried source electrode

Super trench MOSFET including buried source electrode and method of...

Patents Applicationslast 30 patents

MOSFET ACTIVE AREA AND EDGE TERMINATION AREA CHARGE BALANCE

SPLIT GATE SEMICONDUCTOR DEVICE WITH CURVED GATE OXIDE PROFILE

SYSTEM AND METHOD FOR SUBSTRATE WAFER BACK SIDE AND EDGE CROSS SECT...

TRENCH METAL OXIDE SEMICONDUCTOR WITH RECESSED TRENCH MATERIAL AND...

METHOD OF FORMING A HYBRID SPLIT GATE SIMICONDUCTOR

HYBRID SPLIT GATE SEMICONDUCTOR

SPLIT GATE SEMICONDUCTOR DEVICE WITH CURVED GATE OXIDE PROFILE

SUPER-HIGH DENSITY TRENCH MOSFET

SYSTEM AND METHOD FOR SUBSTRATE WAFER BACK SIDE AND EDGE CROSS SECT...

SUPER JUNCTION TRENCH POWER MOSFET DEVICES

SUPER JUNCTION TRENCH POWER MOSFET DEVICE FABRICATION

Method of fabricating super trench MOSFET including buried source e...

MOSFET ACTIVE AREA AND EDGE TERMINATION AREA CHARGE BALANCE

TRENCH METAL OXIDE SEMICONDUCTOR WITH RECESSED TRENCH MATERIAL AND...

Method of fabricating super trench MOSFET including buried source e...

Ultra-low drain-source resistance power MOSFET

Ultra-low drain-source resistance power MOSFET

Super trench MOSFET including buried source electrode and method of...

Super trench MOSFET including buried source electrode and method of...