Siddharth Chouksey

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Neighboring gate-all-around integrated circuit structures having co...
- Patent number 12,199,142
- Issue date Jan 14, 2025
- Intel Corporation
- Siddharth Chouksey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance approaches for fabricating contacts and the resultin...
- Patent number 12,119,387
- Issue date Oct 15, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having embedded GeSnB...
- Patent number 11,990,513
- Issue date May 21, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Halogen treatment for NMOS contact resistance improvement
- Patent number 11,923,290
- Issue date Mar 5, 2024
- Intel Corporation
- Siddharth Chouksey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures having germanium-based channels
- Patent number 11,923,421
- Issue date Mar 5, 2024
- Intel Corporation
- Siddharth Chouksey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-selective epitaxial source/drain deposition to reduce dopant di...
- Patent number 11,735,670
- Issue date Aug 22, 2023
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain diffusion barrier for germanium nMOS transistors
- Patent number 11,699,756
- Issue date Jul 11, 2023
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetrical semiconductor nanowire field-effect transistor
- Patent number 11,575,005
- Issue date Feb 7, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having embedded GeSnB...
- Patent number 11,532,706
- Issue date Dec 20, 2022
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-rich nanowire transistor with relaxed buffer layer
- Patent number 11,450,739
- Issue date Sep 20, 2022
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures having germanium-based channels
- Patent number 11,437,472
- Issue date Sep 6, 2022
- Intel Corporation
- Siddharth Chouksey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing band-to-band tunneling in semiconductor devices
- Patent number 11,233,148
- Issue date Jan 25, 2022
- Intel Corporation
- Benjamin Chu-Kung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain diffusion barrier for germanium NMOS transistors
- Patent number 11,222,977
- Issue date Jan 11, 2022
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-selective epitaxial source/drain deposition to reduce dopant di...
- Patent number 11,189,730
- Issue date Nov 30, 2021
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped insulator cap to reduce source/drain diffusion for germanium...
- Patent number 11,101,356
- Issue date Aug 24, 2021
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems, methods and devices for isolation for subfin leakage
- Patent number 10,644,112
- Issue date May 5, 2020
- Intel Corporation
- Benjamin Chu-Kung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...
- Publication number 20240186378
- Publication date Jun 6, 2024
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS
- Publication number 20240145549
- Publication date May 2, 2024
- Intel Corporation
- Siddharth CHOUKSEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH CONTACTS USING NITRIDIZED MOLYBDENUM
- Publication number 20240105508
- Publication date Mar 28, 2024
- Intel Corporation
- Jitendra Kumar Jha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING SOURCE AND DRAIN REGIONS OF TRANSISTORS TO PREVENT DIFFUSIO...
- Publication number 20240006488
- Publication date Jan 4, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN REFRACTORY METAL CAP
- Publication number 20240006494
- Publication date Jan 4, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH PHOSPHIDE OR ARSE...
- Publication number 20240006506
- Publication date Jan 4, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH BORIDE, INDIUM, O...
- Publication number 20240006533
- Publication date Jan 4, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL CARBON BARRIER REGION FOR NMOS DEVICE CONTACTS
- Publication number 20230187553
- Publication date Jun 15, 2023
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF GATE SPACERS FOR STRAINED PMOS GATE-ALL-AROUND TRANSIS...
- Publication number 20230139255
- Publication date May 4, 2023
- Intel Corporation
- Ashish Agrawal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...
- Publication number 20230082276
- Publication date Mar 16, 2023
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS
- Publication number 20220406895
- Publication date Dec 22, 2022
- Intel Corporation
- Siddharth CHOUKSEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED INTERCONNECT STRUCTURES AND METHODS OF FABRICATION
- Publication number 20220199468
- Publication date Jun 23, 2022
- Intel Corporation
- Kimin Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDENSED SOURCE OR DRAIN STRUCTURES WITH HIGH GERMANIUM CONTENT
- Publication number 20220199773
- Publication date Jun 23, 2022
- Intel Corporation
- Willy RACHMADY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEIGHBORING GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING CO...
- Publication number 20220199771
- Publication date Jun 23, 2022
- Intel Corporation
- Siddharth CHOUKSEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING GESNB SOURCE OR DRAIN STRUCTURES
- Publication number 20220190159
- Publication date Jun 16, 2022
- Intel Corporation
- Rajat PAUL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING BAND-TO-BAND TUNNELING IN SEMICONDUCTOR DEVICES
- Publication number 20220109072
- Publication date Apr 7, 2022
- Intel Corporation
- Benjamin CHU-KUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE AND REDUCED REACTIVITY APPROACHES FOR FABRICATING CO...
- Publication number 20220102522
- Publication date Mar 31, 2022
- Intel Corporation
- Gilbert DEWEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE APPROACHES FOR FABRICATING CONTACTS AND THE RESULTIN...
- Publication number 20220102521
- Publication date Mar 31, 2022
- Intel Corporation
- Gilbert DEWEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN DIFFUSION BARRIER FOR GERMANIUM NMOS TRANSISTORS
- Publication number 20220093797
- Publication date Mar 24, 2022
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-SELECTIVE EPITAXIAL SOURCE/DRAIN DEPOSITION TO REDUCE DOPANT DI...
- Publication number 20220037530
- Publication date Feb 3, 2022
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STRAINED SOURC...
- Publication number 20210408283
- Publication date Dec 30, 2021
- Intel Corporation
- Ashish AGRAWAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STRAINED SOURC...
- Publication number 20210408284
- Publication date Dec 30, 2021
- Intel Corporation
- Ashish AGRAWAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA NITRIDATION FOR GATE OXIDE SCALING OF GE AND SIGE TRANSISTORS
- Publication number 20210408239
- Publication date Dec 30, 2021
- Intel Corporation
- Siddharth CHOUKSEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STRAINED DUAL...
- Publication number 20210407996
- Publication date Dec 30, 2021
- Ashish AGRAWAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HALOGEN TREATMENT FOR NMOS CONTACT RESISTANCE IMPROVEMENT
- Publication number 20210407902
- Publication date Dec 30, 2021
- Intel Corporation
- Siddharth CHOUKSEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED INSULATOR CAP TO REDUCE SOURCE/DRAIN DIFFUSION FOR GERMANIUM...
- Publication number 20210005722
- Publication date Jan 7, 2021
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN DIFFUSION BARRIER FOR GERMANIUM NMOS TRANSISTORS
- Publication number 20210005748
- Publication date Jan 7, 2021
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED STI TO REDUCE SOURCE/DRAIN DIFFUSION FOR GERMANIUM NMOS TRANS...
- Publication number 20200365711
- Publication date Nov 19, 2020
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...
- Publication number 20200312960
- Publication date Oct 1, 2020
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING BAND-TO-BAND TUNNELING IN SEMICONDUCTOR DEVICES
- Publication number 20200266296
- Publication date Aug 20, 2020
- Intel Corporation
- Benjamin Chu-Kung
- H01 - BASIC ELECTRIC ELEMENTS

Siddharth Chouksey

Person

Patents Grantslast 30 patents

Neighboring gate-all-around integrated circuit structures having co...

Low resistance approaches for fabricating contacts and the resultin...

Gate-all-around integrated circuit structures having embedded GeSnB...

Halogen treatment for NMOS contact resistance improvement

Integrated circuit structures having germanium-based channels

Non-selective epitaxial source/drain deposition to reduce dopant di...

Source/drain diffusion barrier for germanium nMOS transistors

Asymmetrical semiconductor nanowire field-effect transistor

Gate-all-around integrated circuit structures having embedded GeSnB...

Germanium-rich nanowire transistor with relaxed buffer layer

Integrated circuit structures having germanium-based channels

Reducing band-to-band tunneling in semiconductor devices

Source/drain diffusion barrier for germanium NMOS transistors

Non-selective epitaxial source/drain deposition to reduce dopant di...

Doped insulator cap to reduce source/drain diffusion for germanium...

Systems, methods and devices for isolation for subfin leakage

Patents Applicationslast 30 patents

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...

INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS

INTEGRATED CIRCUIT DEVICES WITH CONTACTS USING NITRIDIZED MOLYBDENUM

CAPPING SOURCE AND DRAIN REGIONS OF TRANSISTORS TO PREVENT DIFFUSIO...

SOURCE AND DRAIN REFRACTORY METAL CAP

LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH PHOSPHIDE OR ARSE...

LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH BORIDE, INDIUM, O...

METAL CARBON BARRIER REGION FOR NMOS DEVICE CONTACTS

FORMATION OF GATE SPACERS FOR STRAINED PMOS GATE-ALL-AROUND TRANSIS...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...

INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS

SELF-ALIGNED INTERCONNECT STRUCTURES AND METHODS OF FABRICATION

CONDENSED SOURCE OR DRAIN STRUCTURES WITH HIGH GERMANIUM CONTENT

NEIGHBORING GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING CO...

INTEGRATED CIRCUIT STRUCTURES HAVING GESNB SOURCE OR DRAIN STRUCTURES

REDUCING BAND-TO-BAND TUNNELING IN SEMICONDUCTOR DEVICES

LOW RESISTANCE AND REDUCED REACTIVITY APPROACHES FOR FABRICATING CO...

LOW RESISTANCE APPROACHES FOR FABRICATING CONTACTS AND THE RESULTIN...

SOURCE/DRAIN DIFFUSION BARRIER FOR GERMANIUM NMOS TRANSISTORS

NON-SELECTIVE EPITAXIAL SOURCE/DRAIN DEPOSITION TO REDUCE DOPANT DI...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STRAINED SOURC...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STRAINED SOURC...

PLASMA NITRIDATION FOR GATE OXIDE SCALING OF GE AND SIGE TRANSISTORS

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STRAINED DUAL...

HALOGEN TREATMENT FOR NMOS CONTACT RESISTANCE IMPROVEMENT

DOPED INSULATOR CAP TO REDUCE SOURCE/DRAIN DIFFUSION FOR GERMANIUM...

SOURCE/DRAIN DIFFUSION BARRIER FOR GERMANIUM NMOS TRANSISTORS

DOPED STI TO REDUCE SOURCE/DRAIN DIFFUSION FOR GERMANIUM NMOS TRANS...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...

REDUCING BAND-TO-BAND TUNNELING IN SEMICONDUCTOR DEVICES