Siddharth Chouksey

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Low resistance approaches for fabricating contacts and the resultin...
- Patent number 12,119,387
- Issue date Oct 15, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having embedded GeSnB...
- Patent number 11,990,513
- Issue date May 21, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Halogen treatment for NMOS contact resistance improvement
- Patent number 11,923,290
- Issue date Mar 5, 2024
- Intel Corporation
- Siddharth Chouksey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures having germanium-based channels
- Patent number 11,923,421
- Issue date Mar 5, 2024
- Intel Corporation
- Siddharth Chouksey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-selective epitaxial source/drain deposition to reduce dopant di...
- Patent number 11,735,670
- Issue date Aug 22, 2023
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain diffusion barrier for germanium nMOS transistors
- Patent number 11,699,756
- Issue date Jul 11, 2023
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetrical semiconductor nanowire field-effect transistor
- Patent number 11,575,005
- Issue date Feb 7, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having embedded GeSnB...
- Patent number 11,532,706
- Issue date Dec 20, 2022
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-rich nanowire transistor with relaxed buffer layer
- Patent number 11,450,739
- Issue date Sep 20, 2022
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures having germanium-based channels
- Patent number 11,437,472
- Issue date Sep 6, 2022
- Intel Corporation
- Siddharth Chouksey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing band-to-band tunneling in semiconductor devices
- Patent number 11,233,148
- Issue date Jan 25, 2022
- Intel Corporation
- Benjamin Chu-Kung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain diffusion barrier for germanium NMOS transistors
- Patent number 11,222,977
- Issue date Jan 11, 2022
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-selective epitaxial source/drain deposition to reduce dopant di...
- Patent number 11,189,730
- Issue date Nov 30, 2021
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped insulator cap to reduce source/drain diffusion for germanium...
- Patent number 11,101,356
- Issue date Aug 24, 2021
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems, methods and devices for isolation for subfin leakage
- Patent number 10,644,112
- Issue date May 5, 2020
- Intel Corporation
- Benjamin Chu-Kung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...
- Publication number 20240186378
- Publication date Jun 6, 2024
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS
- Publication number 20240145549
- Publication date May 2, 2024
- Intel Corporation
- Siddharth CHOUKSEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH CONTACTS USING NITRIDIZED MOLYBDENUM
- Publication number 20240105508
- Publication date Mar 28, 2024
- Intel Corporation
- Jitendra Kumar Jha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH PHOSPHIDE OR ARSE...
- Publication number 20240006506
- Publication date Jan 4, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH BORIDE, INDIUM, O...
- Publication number 20240006533
- Publication date Jan 4, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING SOURCE AND DRAIN REGIONS OF TRANSISTORS TO PREVENT DIFFUSIO...
- Publication number 20240006488
- Publication date Jan 4, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN REFRACTORY METAL CAP
- Publication number 20240006494
- Publication date Jan 4, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL CARBON BARRIER REGION FOR NMOS DEVICE CONTACTS
- Publication number 20230187553
- Publication date Jun 15, 2023
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF GATE SPACERS FOR STRAINED PMOS GATE-ALL-AROUND TRANSIS...
- Publication number 20230139255
- Publication date May 4, 2023
- Intel Corporation
- Ashish Agrawal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...
- Publication number 20230082276
- Publication date Mar 16, 2023
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS
- Publication number 20220406895
- Publication date Dec 22, 2022
- Intel Corporation
- Siddharth CHOUKSEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED INTERCONNECT STRUCTURES AND METHODS OF FABRICATION
- Publication number 20220199468
- Publication date Jun 23, 2022
- Intel Corporation
- Kimin Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDENSED SOURCE OR DRAIN STRUCTURES WITH HIGH GERMANIUM CONTENT
- Publication number 20220199773
- Publication date Jun 23, 2022
- Intel Corporation
- Willy RACHMADY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEIGHBORING GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING CO...
- Publication number 20220199771
- Publication date Jun 23, 2022
- Intel Corporation
- Siddharth CHOUKSEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING GESNB SOURCE OR DRAIN STRUCTURES
- Publication number 20220190159
- Publication date Jun 16, 2022
- Intel Corporation
- Rajat PAUL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING BAND-TO-BAND TUNNELING IN SEMICONDUCTOR DEVICES
- Publication number 20220109072
- Publication date Apr 7, 2022
- Intel Corporation
- Benjamin CHU-KUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE AND REDUCED REACTIVITY APPROACHES FOR FABRICATING CO...
- Publication number 20220102522
- Publication date Mar 31, 2022
- Intel Corporation
- Gilbert DEWEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE APPROACHES FOR FABRICATING CONTACTS AND THE RESULTIN...
- Publication number 20220102521
- Publication date Mar 31, 2022
- Intel Corporation
- Gilbert DEWEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN DIFFUSION BARRIER FOR GERMANIUM NMOS TRANSISTORS
- Publication number 20220093797
- Publication date Mar 24, 2022
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-SELECTIVE EPITAXIAL SOURCE/DRAIN DEPOSITION TO REDUCE DOPANT DI...
- Publication number 20220037530
- Publication date Feb 3, 2022
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STRAINED SOURC...
- Publication number 20210408283
- Publication date Dec 30, 2021
- Intel Corporation
- Ashish AGRAWAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STRAINED SOURC...
- Publication number 20210408284
- Publication date Dec 30, 2021
- Intel Corporation
- Ashish AGRAWAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA NITRIDATION FOR GATE OXIDE SCALING OF GE AND SIGE TRANSISTORS
- Publication number 20210408239
- Publication date Dec 30, 2021
- Intel Corporation
- Siddharth CHOUKSEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STRAINED DUAL...
- Publication number 20210407996
- Publication date Dec 30, 2021
- Ashish AGRAWAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HALOGEN TREATMENT FOR NMOS CONTACT RESISTANCE IMPROVEMENT
- Publication number 20210407902
- Publication date Dec 30, 2021
- Intel Corporation
- Siddharth CHOUKSEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED INSULATOR CAP TO REDUCE SOURCE/DRAIN DIFFUSION FOR GERMANIUM...
- Publication number 20210005722
- Publication date Jan 7, 2021
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN DIFFUSION BARRIER FOR GERMANIUM NMOS TRANSISTORS
- Publication number 20210005748
- Publication date Jan 7, 2021
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED STI TO REDUCE SOURCE/DRAIN DIFFUSION FOR GERMANIUM NMOS TRANS...
- Publication number 20200365711
- Publication date Nov 19, 2020
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...
- Publication number 20200312960
- Publication date Oct 1, 2020
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING BAND-TO-BAND TUNNELING IN SEMICONDUCTOR DEVICES
- Publication number 20200266296
- Publication date Aug 20, 2020
- Intel Corporation
- Benjamin Chu-Kung
- H01 - BASIC ELECTRIC ELEMENTS

Siddharth Chouksey

Person

Patents Grantslast 30 patents

Low resistance approaches for fabricating contacts and the resultin...

Gate-all-around integrated circuit structures having embedded GeSnB...

Halogen treatment for NMOS contact resistance improvement

Integrated circuit structures having germanium-based channels

Non-selective epitaxial source/drain deposition to reduce dopant di...

Source/drain diffusion barrier for germanium nMOS transistors

Asymmetrical semiconductor nanowire field-effect transistor

Gate-all-around integrated circuit structures having embedded GeSnB...

Germanium-rich nanowire transistor with relaxed buffer layer

Integrated circuit structures having germanium-based channels

Reducing band-to-band tunneling in semiconductor devices

Source/drain diffusion barrier for germanium NMOS transistors

Non-selective epitaxial source/drain deposition to reduce dopant di...

Doped insulator cap to reduce source/drain diffusion for germanium...

Systems, methods and devices for isolation for subfin leakage

Patents Applicationslast 30 patents

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...

INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS

INTEGRATED CIRCUIT DEVICES WITH CONTACTS USING NITRIDIZED MOLYBDENUM

LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH PHOSPHIDE OR ARSE...

LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH BORIDE, INDIUM, O...

CAPPING SOURCE AND DRAIN REGIONS OF TRANSISTORS TO PREVENT DIFFUSIO...

SOURCE AND DRAIN REFRACTORY METAL CAP

METAL CARBON BARRIER REGION FOR NMOS DEVICE CONTACTS

FORMATION OF GATE SPACERS FOR STRAINED PMOS GATE-ALL-AROUND TRANSIS...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...

INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS

SELF-ALIGNED INTERCONNECT STRUCTURES AND METHODS OF FABRICATION

CONDENSED SOURCE OR DRAIN STRUCTURES WITH HIGH GERMANIUM CONTENT

NEIGHBORING GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING CO...

INTEGRATED CIRCUIT STRUCTURES HAVING GESNB SOURCE OR DRAIN STRUCTURES

REDUCING BAND-TO-BAND TUNNELING IN SEMICONDUCTOR DEVICES

LOW RESISTANCE AND REDUCED REACTIVITY APPROACHES FOR FABRICATING CO...

LOW RESISTANCE APPROACHES FOR FABRICATING CONTACTS AND THE RESULTIN...

SOURCE/DRAIN DIFFUSION BARRIER FOR GERMANIUM NMOS TRANSISTORS

NON-SELECTIVE EPITAXIAL SOURCE/DRAIN DEPOSITION TO REDUCE DOPANT DI...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STRAINED SOURC...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STRAINED SOURC...

PLASMA NITRIDATION FOR GATE OXIDE SCALING OF GE AND SIGE TRANSISTORS

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STRAINED DUAL...

HALOGEN TREATMENT FOR NMOS CONTACT RESISTANCE IMPROVEMENT

DOPED INSULATOR CAP TO REDUCE SOURCE/DRAIN DIFFUSION FOR GERMANIUM...

SOURCE/DRAIN DIFFUSION BARRIER FOR GERMANIUM NMOS TRANSISTORS

DOPED STI TO REDUCE SOURCE/DRAIN DIFFUSION FOR GERMANIUM NMOS TRANS...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...

REDUCING BAND-TO-BAND TUNNELING IN SEMICONDUCTOR DEVICES