Syd R. Wilson

Person

Phoenix, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for transfer of thin-film of silicon carbide via implantatio...
- Patent number 6,355,541
- Issue date Mar 12, 2002
- Lockheed Martin Energy Research Corporation
- Orin Wayne Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide transistor and method therefor
- Patent number 6,180,495
- Issue date Jan 30, 2001
- Motorola, Inc.
- Syd R. Wilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device with a thinned substrate
- Patent number 5,933,750
- Issue date Aug 3, 1999
- Motorola, Inc.
- Syd R. Wilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device using lateral gettering
- Patent number 5,753,560
- Issue date May 19, 1998
- Motorola, Inc.
- Stella Q. Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for metallization of semiconductor devices
- Patent number 5,700,721
- Issue date Dec 23, 1997
- Motorola, Inc.
- Hank Hukyoo Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for metallization of semiconductor devices
- Patent number 5,554,889
- Issue date Sep 10, 1996
- Motorola, Inc.
- Hank H. Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming vias through two-sided substrate
- Patent number 5,424,245
- Issue date Jun 13, 1995
- Motorola, Inc.
- Richard W. Gurtler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming substrate contact trenches and isolation trenches...
- Patent number 5,217,920
- Issue date Jun 8, 1993
- Motorola, Inc.
- Robert J. Mattox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a trench structure
- Patent number 5,112,772
- Issue date May 12, 1992
- Motorola, Inc.
- Syd R. Wilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making a multilayer metallization structure
- Patent number 4,943,539
- Issue date Jul 24, 1990
- Motorola, Inc.
- Syd R. Wilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for determining silicon (mass 28) beam purity prior to impla...
- Patent number 4,799,392
- Issue date Jan 24, 1989
- Motorola Inc.
- Syd R. Wilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge storage depletion region discharge protection
- Patent number H569
- Issue date Jan 3, 1989
- Motorola Inc.
- Charles J. Varker
- 357 -
Information Patent Grant
Means for stabilizing polycrystalline semiconductor layers
- Patent number 4,755,865
- Issue date Jul 5, 1988
- Motorola Inc.
- Syd. R. Wilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preventing hillock formation in polysilicon layer by oxyg...
- Patent number 4,740,481
- Issue date Apr 26, 1988
- Motorola Inc.
- Syd R. Wilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing low noise, high grade constant semiconductor j...
- Patent number 4,732,866
- Issue date Mar 22, 1988
- Motorola Inc.
- Jerry L. Chruma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal redistribution by rapid thermal processing
- Patent number 4,717,588
- Issue date Jan 5, 1988
- Motorola Inc.
- Syd R. Wilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming depthwise isolation by selective oxygen/nitrogen deep impla...
- Patent number 4,683,637
- Issue date Aug 4, 1987
- Motorola, Inc.
- Charles J. Varker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Means and method for stabilizing polycrystalline semiconductor layers
- Patent number 4,682,407
- Issue date Jul 28, 1987
- Motorola, Inc.
- Syd R. Wilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating a semiconductor device with reduced gate leakage
- Patent number 4,621,413
- Issue date Nov 11, 1986
- Motorola, Inc.
- Arthur T. Lowe
- H01 - BASIC ELECTRIC ELEMENTS

Syd R. Wilson

Person

Patents Grantslast 30 patents

Method for transfer of thin-film of silicon carbide via implantatio...

Silicon carbide transistor and method therefor

Method of fabricating a semiconductor device with a thinned substrate

Method for fabricating a semiconductor device using lateral gettering

Structure and method for metallization of semiconductor devices

Structure and method for metallization of semiconductor devices

Method of forming vias through two-sided substrate

Method of forming substrate contact trenches and isolation trenches...

Method of fabricating a trench structure

Process for making a multilayer metallization structure

Method for determining silicon (mass 28) beam purity prior to impla...

Charge storage depletion region discharge protection

Means for stabilizing polycrystalline semiconductor layers

Method of preventing hillock formation in polysilicon layer by oxyg...

Method for producing low noise, high grade constant semiconductor j...

Metal redistribution by rapid thermal processing

Forming depthwise isolation by selective oxygen/nitrogen deep impla...

Means and method for stabilizing polycrystalline semiconductor layers

Fabricating a semiconductor device with reduced gate leakage