Takashi Mimura

Person

Kawasaki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with strain in channel region and its manufact...
- Patent number 7,847,281
- Issue date Dec 7, 2010
- Fujitsu Limited
- Takashi Mimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and production method thereof
- Patent number 7,564,061
- Issue date Jul 21, 2009
- Fujitsu Limited
- Takashi Mimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 7,316,959
- Issue date Jan 8, 2008
- Fujitsu Limited
- Takashi Mimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high mobility and high speed
- Patent number 6,855,987
- Issue date Feb 15, 2005
- Fujitsu Limited
- Takashi Mimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 6,803,613
- Issue date Oct 12, 2004
- Fujitsu Limited
- Keiji Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive head, manufacturing method of the head and magneti...
- Patent number 5,761,010
- Issue date Jun 2, 1998
- Fujitsu Limited
- Takashi Mimura
- G11 - INFORMATION STORAGE
Information Patent Grant
Logic circuit with enhancement type FET and Schottky gate
- Patent number 5,336,949
- Issue date Aug 9, 1994
- Fujitsu Limited
- Takashi Mimura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
High electron mobility single heterojunction semiconductor devices
- Patent number RE33584
- Issue date May 7, 1991
- Fujitsu Limited
- Takashi Mimura
- 357 -
Information Patent Grant
Compound semiconductor device having nonalloyed ohmic contacts
- Patent number 4,961,194
- Issue date Oct 2, 1990
- Fujitsu Limited
- Shigeru Kuroda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resonant tunneling minority carrier transistor
- Patent number 4,958,201
- Issue date Sep 18, 1990
- Fujitsu Limited
- Takashi Mimura
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Heterojunction field effect device having an implanted region withi...
- Patent number 4,771,324
- Issue date Sep 13, 1988
- Fujitsu Limited
- Kouichiro Odani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making complementary field effect transistors
- Patent number 4,732,870
- Issue date Mar 22, 1988
- Fujitsu Limited
- Takashi Mimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT with epitaxial narrow bandgap source/drain contacts isolated f...
- Patent number 4,714,948
- Issue date Dec 22, 1987
- Fujitsu Limited
- Takashi Mimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and process for producing the same
- Patent number 4,663,643
- Issue date May 5, 1987
- Fujitsu Limited
- Takashi Mimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing enhancement mode and depletion mode FETs
- Patent number 4,615,102
- Issue date Oct 7, 1986
- Fujitsu Limited
- Masahisa Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process and apparatus for fabricating a semiconductor device
- Patent number 4,477,311
- Issue date Oct 16, 1984
- Fujitsu Limited
- Takashi Mimura
- C30 - CRYSTAL GROWTH
Information Patent Grant
High electron mobility single heterojunction semiconductor devices
- Patent number 4,424,525
- Issue date Jan 3, 1984
- Fujitsu Limited
- Takashi Mimura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH STRAIN IN CHANNEL REGION AND ITS MANUFACT...
- Publication number 20080303062
- Publication date Dec 11, 2008
- FUJITSU LIMITED
- Takashi MIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20070243672
- Publication date Oct 18, 2007
- Fujitsu Limited
- Takashi Mimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor and production method thereof
- Publication number 20060081947
- Publication date Apr 20, 2006
- FUJITSU LIMITED
- Takashi Mimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20050085027
- Publication date Apr 21, 2005
- FUJITSU LIMITED
- Takashi Mimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030168700
- Publication date Sep 11, 2003
- FUJITSU LIMITED
- Takashi Mimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method of the same
- Publication number 20030067021
- Publication date Apr 10, 2003
- FUJITSU LIMITED
- Keiji Ikeda
- H01 - BASIC ELECTRIC ELEMENTS

Takashi Mimura

Person

Patents Grantslast 30 patents

Semiconductor device with strain in channel region and its manufact...

Field effect transistor and production method thereof

Semiconductor device and method for fabricating the same

Semiconductor device with high mobility and high speed

Semiconductor device and manufacturing method of the same

Magnetoresistive head, manufacturing method of the head and magneti...

Logic circuit with enhancement type FET and Schottky gate

High electron mobility single heterojunction semiconductor devices

Compound semiconductor device having nonalloyed ohmic contacts

Resonant tunneling minority carrier transistor

Heterojunction field effect device having an implanted region withi...

Method of making complementary field effect transistors

HEMT with epitaxial narrow bandgap source/drain contacts isolated f...

Semiconductor device and process for producing the same

Method of producing enhancement mode and depletion mode FETs

Process and apparatus for fabricating a semiconductor device

High electron mobility single heterojunction semiconductor devices

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH STRAIN IN CHANNEL REGION AND ITS MANUFACT...

Semiconductor device and method for fabricating the same

Field effect transistor and production method thereof

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Semiconductor device and manufacturing method of the same