Takashi YAMADA

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Interface circuit
- Patent number 9,755,644
- Issue date Sep 5, 2017
- Lapis Semiconductor Co., Ltd.
- Takashi Yamada
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor memory device and method of manufacturing the same
- Patent number 7,847,322
- Issue date Dec 7, 2010
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing SOI substrate
- Patent number 7,811,878
- Issue date Oct 12, 2010
- Sumco Corporation
- Tetsuya Nakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing SOI substrate
- Patent number 7,537,989
- Issue date May 26, 2009
- Sumco Corporation
- Tetsuya Nakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device substrate including a single-crystalline layer...
- Patent number 7,521,300
- Issue date Apr 21, 2009
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Element formation substrate, method of manufacturing the same, and...
- Patent number 7,510,945
- Issue date Mar 31, 2009
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor optical device
- Patent number 7,508,049
- Issue date Mar 24, 2009
- Sumitomo Electric Industries, Ltd.
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device formed in semiconductor layer arranged on subs...
- Patent number 7,420,249
- Issue date Sep 2, 2008
- Kabushiki Kaisha Toshiba
- Tsutomu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having epitaxial layer
- Patent number 7,323,748
- Issue date Jan 29, 2008
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Element formation substrate for forming semiconductor device
- Patent number 7,285,825
- Issue date Oct 23, 2007
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising multiple layers with trenches forme...
- Patent number 7,187,035
- Issue date Mar 6, 2007
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip which combines bulk and SOI regions and separate...
- Patent number 7,148,543
- Issue date Dec 12, 2006
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 7,095,081
- Issue date Aug 22, 2006
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device for dynamically storing data with chann...
- Patent number 7,075,820
- Issue date Jul 11, 2006
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a hollow region and method of manufactu...
- Patent number 7,075,169
- Issue date Jul 11, 2006
- Kabushiki Kaisha Toshiba
- Yoshihiro Minami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of partial SOI wafer, semiconductor device usi...
- Patent number 7,071,039
- Issue date Jul 4, 2006
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having epitaxial layer
- Patent number 7,049,661
- Issue date May 23, 2006
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device formed in semiconductor layer arranged on subs...
- Patent number 7,019,365
- Issue date Mar 28, 2006
- Kabushiki Kaisha Toshiba
- Tsutomu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip having multiple functional blocks integrated in...
- Patent number 7,018,904
- Issue date Mar 28, 2006
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising plurality of semiconductor areas ha...
- Patent number 6,933,590
- Issue date Aug 23, 2005
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having one of patterned SOI and SON structure
- Patent number 6,906,384
- Issue date Jun 14, 2005
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with vertical transistor formed in a silicon-o...
- Patent number 6,906,372
- Issue date Jun 14, 2005
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing SOI element having body contact
- Patent number 6,841,828
- Issue date Jan 11, 2005
- Kabushiki Kaisha Toshiba
- Shigeru Kawanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip which combines bulk and SOI regions and separate...
- Patent number 6,835,981
- Issue date Dec 28, 2004
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of manufacturing the same
- Patent number 6,778,424
- Issue date Aug 17, 2004
- Kabushiki Kaisha Toshiba
- Yoshihisa Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device formed in semiconductor layer arranged on subs...
- Patent number 6,630,714
- Issue date Oct 7, 2003
- Kabushiki Kaisha Toshiba
- Tsutomu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 6,548,848
- Issue date Apr 15, 2003
- Kabushiki Kaisha Toshiba
- Fumio Horiguchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Manufacturing method of partial SOI wafer, semiconductor device usi...
- Patent number 6,531,754
- Issue date Mar 11, 2003
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing SOI element having body contact
- Patent number 6,403,405
- Issue date Jun 11, 2002
- Kabushiki Kaisha Toshiba
- Shigeru Kawanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor formed on an insulating layer
- Patent number 6,376,897
- Issue date Apr 23, 2002
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTERFACE CIRCUIT
- Publication number 20170093402
- Publication date Mar 30, 2017
- LAPIS SEMICONDUCTOR CO., LTD.
- Takashi YAMADA
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Method of Manufacturing SOI Substrate
- Publication number 20090203187
- Publication date Aug 13, 2009
- SUMCO CORPORATION
- Tetsuya NAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SOI SUBSTRATE
- Publication number 20080242048
- Publication date Oct 2, 2008
- SUMCO CORPORATION
- Tetsuya Nakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Element formation substrate, method of manufacturing the same, and...
- Publication number 20080044983
- Publication date Feb 21, 2008
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FORMED IN SEMICONDUCTOR LAYER ARRANGED ON SUBS...
- Publication number 20080012078
- Publication date Jan 17, 2008
- Tsutomu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20070284661
- Publication date Dec 13, 2007
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20060244065
- Publication date Nov 2, 2006
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device substrate and method of manufacturing semicond...
- Publication number 20060234478
- Publication date Oct 19, 2006
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20060118873
- Publication date Jun 8, 2006
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a hybrid semiconductor wafer having a buri...
- Publication number 20060084249
- Publication date Apr 20, 2006
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device formed in semiconductor layer arranged on subs...
- Publication number 20050156245
- Publication date Jul 21, 2005
- Tsutomu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory device for dynamically storing data with chann...
- Publication number 20050141262
- Publication date Jun 30, 2005
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20050045951
- Publication date Mar 3, 2005
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor chip having multiple functional blocks integrated in...
- Publication number 20050019999
- Publication date Jan 27, 2005
- KABUSHIKI KAISHA TOSHIBA
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor chip which combines bulk and SOI regions and separate...
- Publication number 20040195626
- Publication date Oct 7, 2004
- KABUSHIKI KAISHA TOSHIBA
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Element formation substrate, method of manufacturing the same, and...
- Publication number 20040150044
- Publication date Aug 5, 2004
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a hollow region and method of manufactu...
- Publication number 20040124439
- Publication date Jul 1, 2004
- Yoshihiro Minami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device comprising plurality of semiconductor areas ha...
- Publication number 20040113228
- Publication date Jun 17, 2004
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device formed in semiconductor layer arranged on subs...
- Publication number 20040026739
- Publication date Feb 12, 2004
- Tsutomu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing SOI element having body contact
- Publication number 20030205760
- Publication date Nov 6, 2003
- Kabushiki Kaisha Toshiba
- Shigeru Kawanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having one of patterned SOI and SON structure
- Publication number 20030201512
- Publication date Oct 30, 2003
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having one of patterned SOI and SON structure
- Publication number 20030151112
- Publication date Aug 14, 2003
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method of partial SOI wafer, semiconductor device usi...
- Publication number 20030146488
- Publication date Aug 7, 2003
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device formed in semiconductor layer arranged on subs...
- Publication number 20030122191
- Publication date Jul 3, 2003
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory and method for bit and/or byte write operation
- Publication number 20030117878
- Publication date Jun 26, 2003
- Takashi Yamada
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor device substrate and method of manufacturing semicond...
- Publication number 20030057490
- Publication date Mar 27, 2003
- Kabushiki Kaisha Toshiba
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor chip having multiple functional blocks integrated in...
- Publication number 20030057487
- Publication date Mar 27, 2003
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory device
- Publication number 20020130341
- Publication date Sep 19, 2002
- Kabushiki Kaisha Toshiba
- Fumio Horiguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing SOI element having body contact
- Publication number 20020127784
- Publication date Sep 12, 2002
- Kabushiki Kaisha Toshiba
- Shigeru Kawanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory device and method of manufacturing the same
- Publication number 20020114191
- Publication date Aug 22, 2002
- Yoshihisa Iwata
- H01 - BASIC ELECTRIC ELEMENTS

Takashi YAMADA

Person

Patents Grantslast 30 patents

Interface circuit

Semiconductor memory device and method of manufacturing the same

Method of manufacturing SOI substrate

Method for manufacturing SOI substrate

Semiconductor device substrate including a single-crystalline layer...

Element formation substrate, method of manufacturing the same, and...

Semiconductor optical device

Semiconductor device formed in semiconductor layer arranged on subs...

Semiconductor device having epitaxial layer

Element formation substrate for forming semiconductor device

Semiconductor device comprising multiple layers with trenches forme...

Semiconductor chip which combines bulk and SOI regions and separate...

Semiconductor device and manufacturing method thereof

Semiconductor memory device for dynamically storing data with chann...

Semiconductor device having a hollow region and method of manufactu...

Manufacturing method of partial SOI wafer, semiconductor device usi...

Semiconductor device having epitaxial layer

Semiconductor device formed in semiconductor layer arranged on subs...

Semiconductor chip having multiple functional blocks integrated in...

Semiconductor device comprising plurality of semiconductor areas ha...

Semiconductor device having one of patterned SOI and SON structure

Semiconductor device with vertical transistor formed in a silicon-o...

Method of manufacturing SOI element having body contact

Semiconductor chip which combines bulk and SOI regions and separate...

Semiconductor memory device and method of manufacturing the same

Semiconductor device formed in semiconductor layer arranged on subs...

Semiconductor memory device

Manufacturing method of partial SOI wafer, semiconductor device usi...

Method of manufacturing SOI element having body contact

Lateral bipolar transistor formed on an insulating layer

Patents Applicationslast 30 patents

INTERFACE CIRCUIT

Method of Manufacturing SOI Substrate

METHOD FOR MANUFACTURING SOI SUBSTRATE

Element formation substrate, method of manufacturing the same, and...

SEMICONDUCTOR DEVICE FORMED IN SEMICONDUCTOR LAYER ARRANGED ON SUBS...

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Semiconductor device and manufacturing method thereof

Semiconductor device substrate and method of manufacturing semicond...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Method for manufacturing a hybrid semiconductor wafer having a buri...

Semiconductor device formed in semiconductor layer arranged on subs...

Semiconductor memory device for dynamically storing data with chann...

Semiconductor device and manufacturing method thereof

Semiconductor chip having multiple functional blocks integrated in...

Semiconductor chip which combines bulk and SOI regions and separate...

Element formation substrate, method of manufacturing the same, and...

Semiconductor device having a hollow region and method of manufactu...

Semiconductor device comprising plurality of semiconductor areas ha...

Semiconductor device formed in semiconductor layer arranged on subs...

Method of manufacturing SOI element having body contact

Semiconductor device having one of patterned SOI and SON structure

Semiconductor device having one of patterned SOI and SON structure

Manufacturing method of partial SOI wafer, semiconductor device usi...

Semiconductor device formed in semiconductor layer arranged on subs...

Semiconductor memory and method for bit and/or byte write operation

Semiconductor device substrate and method of manufacturing semicond...

Semiconductor chip having multiple functional blocks integrated in...

Semiconductor memory device

Method of manufacturing SOI element having body contact

Semiconductor memory device and method of manufacturing the same