Tatsuo Otsuki

Person

Osaka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Ferroelectric memory and method of operating same
- Patent number 6,924,997
- Issue date Aug 2, 2005
- Symetrix Corporation
- Zheng Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 6,876,030
- Issue date Apr 5, 2005
- Matsushita Electric Industrial Co., Ltd.
- Kiyoshi Uchiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film ferroelectric capacitors having improved memory retention...
- Patent number RE38565
- Issue date Aug 17, 2004
- Matsushita Electric Industrial Co., Ltd.
- Shinichiro Hayashi
- 438 - Semiconductor device manufacturing: process
Information Patent Grant
Ferroelectric device with capping layer and method of making same
- Patent number 6,653,156
- Issue date Nov 25, 2003
- Symetrix Corporation
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric device with capping layer and method of making same
- Patent number 6,541,806
- Issue date Apr 1, 2003
- Symetrix Corporation
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric field effect transistor
- Patent number 6,469,334
- Issue date Oct 22, 2002
- Symetrix Corporation
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit capacitors with barrier layer and process for ma...
- Patent number 6,447,838
- Issue date Sep 10, 2002
- Symetrix Corporation
- Masamichi Azuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film ferroelectric capacitors having improved memory retention...
- Patent number 6,440,754
- Issue date Aug 27, 2002
- Matsushita Electric Industrial Co., Ltd.
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a capacitor exhibiting improved moistur...
- Patent number 6,333,528
- Issue date Dec 25, 2001
- Matsushita Electric Industrial Co., Ltd.
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having capacitor and manufacturing method thereof
- Patent number 6,294,438
- Issue date Sep 25, 2001
- Matsushita Electronics Corporation
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film ferroelectric capacitors having improved memory retention...
- Patent number 6,265,738
- Issue date Jul 24, 2001
- Matsushita Electronics Corporation
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating ferroelectric field effect transistor having...
- Patent number 6,255,121
- Issue date Jul 3, 2001
- Symetrix Corporation
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a passivation layer which minimizes dif...
- Patent number 6,169,304
- Issue date Jan 2, 2001
- Matsushita Electric Industrial Co., Ltd.
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory with disturb protection
- Patent number 6,151,241
- Issue date Nov 21, 2000
- Symetrix Corporation
- Shinichiro Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having capacitor and manufacturing method thereof
- Patent number 6,107,657
- Issue date Aug 22, 2000
- Matsushita Electronics Corporation
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory with ferroelectric thin film having thickness...
- Patent number 6,104,049
- Issue date Aug 15, 2000
- Symetrix Corporation
- Narayan Solayappan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having capacitor exhibiting improved mositure...
- Patent number 6,015,987
- Issue date Jan 18, 2000
- Matsushita Electric Industrial Co., Ltd.
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing bi-layered ferroelectric thin film
- Patent number 5,932,281
- Issue date Aug 3, 1999
- Matsushita Electronics Corporation
- Yukoh Hochido
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device having capacitor and manufacturing method thereof
- Patent number 5,780,351
- Issue date Jul 14, 1998
- Matsushita Electric Industrial Co., Ltd.
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for fabricating silicon dioxide and silicon gl...
- Patent number 5,759,923
- Issue date Jun 2, 1998
- Symetrix Corporation
- Larry D. McMillan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device having capacitor and manufacturing method thereof
- Patent number 5,624,864
- Issue date Apr 29, 1997
- Matsushita Electronics Corporation
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffered FET logic gate using depletion-mode MESFET's.
- Patent number 4,712,023
- Issue date Dec 8, 1987
- Matsushita Electric Industrial Co., Ltd.
- Tatsuo Otsuki
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
Ferroelectric memory and method of operating same
- Publication number 20040047174
- Publication date Mar 11, 2004
- Zheng Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Ferroelectric device with capping layer and method of making same
- Publication number 20030034548
- Publication date Feb 20, 2003
- Symetrix Corporation
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor memory device
- Publication number 20020036314
- Publication date Mar 28, 2002
- Kiyoshi Uchiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating ferroelectric field effect transistor
- Publication number 20010041372
- Publication date Nov 15, 2001
- Symetrix Corporation
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin film ferroelectric capacitors having improved memory retention...
- Publication number 20010041373
- Publication date Nov 15, 2001
- Matsushita Electronics Corporation
- Shinichiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROLECTRIC DEVICE WITH CAPPING LAYER AND METHOD OF MAKING SAME
- Publication number 20010011738
- Publication date Aug 9, 2001
- SHINICHIRO HAYASHI
- H01 - BASIC ELECTRIC ELEMENTS

Tatsuo Otsuki

Person

Patents Grantslast 30 patents

Ferroelectric memory and method of operating same

Semiconductor memory device

Thin film ferroelectric capacitors having improved memory retention...

Ferroelectric device with capping layer and method of making same

Ferroelectric device with capping layer and method of making same

Ferroelectric field effect transistor

Integrated circuit capacitors with barrier layer and process for ma...

Thin film ferroelectric capacitors having improved memory retention...

Semiconductor device having a capacitor exhibiting improved moistur...

Semiconductor device having capacitor and manufacturing method thereof

Thin film ferroelectric capacitors having improved memory retention...

Method for fabricating ferroelectric field effect transistor having...

Semiconductor device having a passivation layer which minimizes dif...

Ferroelectric memory with disturb protection

Semiconductor device having capacitor and manufacturing method thereof

Ferroelectric memory with ferroelectric thin film having thickness...

Semiconductor device having capacitor exhibiting improved mositure...

Method of manufacturing bi-layered ferroelectric thin film

Semiconductor device having capacitor and manufacturing method thereof

Method and apparatus for fabricating silicon dioxide and silicon gl...

Semiconductor device having capacitor and manufacturing method thereof

Buffered FET logic gate using depletion-mode MESFET's.

Patents Applicationslast 30 patents

Ferroelectric memory and method of operating same

Ferroelectric device with capping layer and method of making same

Semiconductor memory device

Method for fabricating ferroelectric field effect transistor

Thin film ferroelectric capacitors having improved memory retention...

FERROLECTRIC DEVICE WITH CAPPING LAYER AND METHOD OF MAKING SAME