Thomas E. Kazior

Person

Sudbury, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Group III-V semiconductor structures having crystalline regrowth la...
- Patent number 11,784,248
- Issue date Oct 10, 2023
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetergenous integration and electro-optic modulation of III-nitride...
- Patent number 11,754,865
- Issue date Sep 12, 2023
- Raytheon BBN Technologies Corp.
- Moe Soltani
- G02 - OPTICS
Information Patent Grant
Integration of electronics with lithium niobate photonics
- Patent number 11,747,704
- Issue date Sep 5, 2023
- Raytheon BBN Technologies Corp.
- Moe Soltani
- G02 - OPTICS
Information Patent Grant
Group III-V semiconductor structures having crystalline regrowth la...
- Patent number 11,515,410
- Issue date Nov 29, 2022
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of electronics with Lithium Niobate photonics
- Patent number 11,340,512
- Issue date May 24, 2022
- Raytheon BBN Technologies Corp.
- Moe Soltani
- G02 - OPTICS
Information Patent Grant
Electrode structure for field effect transistor
- Patent number 11,239,326
- Issue date Feb 1, 2022
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride structures having low capacitance gate contacts integrated...
- Patent number 11,177,216
- Issue date Nov 16, 2021
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer structure with mode suppression
- Patent number 10,930,742
- Issue date Feb 23, 2021
- Raytheon Company
- Hooman Kazemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride structure having gold-free contact and methods for forming...
- Patent number 10,224,285
- Issue date Mar 5, 2019
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride structure having gold-free contact and methods for forming...
- Patent number 10,096,550
- Issue date Oct 9, 2018
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and structures for forming microstrip transmission lines on...
- Patent number 9,761,445
- Issue date Sep 12, 2017
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microwave integrated circuit (MMIC) damascene electrical interconne...
- Patent number 9,478,508
- Issue date Oct 25, 2016
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double heterojunction group III-nitride structures
- Patent number 9,231,064
- Issue date Jan 5, 2016
- Raytheon Company
- Shahed Reza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure having monolithic heterogeneous integration of...
- Patent number 8,575,666
- Issue date Nov 5, 2013
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gold-free ohmic contacts
- Patent number 8,466,555
- Issue date Jun 18, 2013
- Raytheon Company
- Ram V. Chelakara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation layer for a circuit device and method of manufacture
- Patent number 7,902,083
- Issue date Mar 8, 2011
- Raytheon Company
- John M. Bedinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation layer for a circuit device and method of manufacture
- Patent number 7,767,589
- Issue date Aug 3, 2010
- Raytheon Company
- John M. Bedinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MMIC having back-side multi-layer signal routing
- Patent number 7,387,958
- Issue date Jun 17, 2008
- Raytheon Company
- Christopher P. McCarroll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Direct backside interconnect for multiple chip assemblies
- Patent number 6,175,287
- Issue date Jan 16, 2001
- Raytheon Company
- James L. Lampen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures having dual surface via holes
- Patent number 5,343,071
- Issue date Aug 30, 1994
- Raytheon Company
- Thomas E. Kazior
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective backside plating of GaAs monolithic microwave integrated...
- Patent number 4,970,578
- Issue date Nov 13, 1990
- Raytheon Company
- Elsa K. Tong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacture TiW alignment mark and implant mask
- Patent number 4,968,637
- Issue date Nov 6, 1990
- Raytheon Company
- Robert L. Mozzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simultaneous formation of via hole and tube structures for GaAs mon...
- Patent number 4,927,784
- Issue date May 22, 1990
- Raytheon Company
- Thomas E. Kazior
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simultaneous formation of via hole and tub structures for GaAs mono...
- Patent number 4,807,022
- Issue date Feb 21, 1989
- Raytheon Company
- Thomas E. Kazior
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective backside plating of gaas monolithic microwave integrated...
- Patent number 4,794,093
- Issue date Dec 27, 1988
- Raytheon Company
- Elsa K. Tong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATION OF ELECTRONICS WITH LITHIUM NIOBATE PHOTONICS
- Publication number 20240061310
- Publication date Feb 22, 2024
- RAYTHEON BBN TECHNOLOGIES CORP.
- Moe Soltani
- G02 - OPTICS
Information Patent Application
INTEGRATION OF ELECTRONICS WITH LITHIUM NIOBATE PHOTONICS
- Publication number 20230408885
- Publication date Dec 21, 2023
- RAYTHEON BBN TECHNOLOGIES CORP.
- Moe Soltani
- G02 - OPTICS
Information Patent Application
HETEROGENEOUS INTEGRATION AND ELECTRO-OPTIC MODULATION OF III-NITRI...
- Publication number 20230194911
- Publication date Jun 22, 2023
- RAYTHEON BBN TECHNOLOGIES CORP.
- Moe Soltani
- G02 - OPTICS
Information Patent Application
GROUP III-V SEMICONDUCTOR STRUCTURES HAVING CRYSTALLINE REGROWTH LA...
- Publication number 20230073459
- Publication date Mar 9, 2023
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF ELECTRONICS WITH LITHIUM NIOBATE PHOTONICS
- Publication number 20220252956
- Publication date Aug 11, 2022
- RAYTHEON BBN TECHNOLOGIES CORP.
- Moe Soltani
- G02 - OPTICS
Information Patent Application
GROUP III-V SEMICONDUCTOR STRUCTURES HAVING CRYSTALLINE REGROWTH LA...
- Publication number 20220140126
- Publication date May 5, 2022
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF ELECTRONICS WITH LITHIUM NIOBATE PHOTONICS
- Publication number 20210333681
- Publication date Oct 28, 2021
- Raytheon BBN Technologies Corp.
- Moe Soltani
- G02 - OPTICS
Information Patent Application
HETERGENOUS INTEGRATION AND ELECTRO-OPTIC MODULATION OF III-NITRIDE...
- Publication number 20210157178
- Publication date May 27, 2021
- RAYTHEON BBN TECHNOLOGIES CORP.
- Moe Soltani
- G02 - OPTICS
Information Patent Application
WAFER STRUCTURE WITH MODE SUPPRESSION
- Publication number 20200219982
- Publication date Jul 9, 2020
- Raytheon Company
- Hooman Kazemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE STRUCTURES HAVING LOW CAPACITANCE GATE CONTACTS INTEGRATED...
- Publication number 20200083167
- Publication date Mar 12, 2020
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODE STRUCTURE FOR FIELD EFFECT TRANSISTOR
- Publication number 20190237554
- Publication date Aug 1, 2019
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECONSTITUTED WAFER STRUCTURE
- Publication number 20190165108
- Publication date May 30, 2019
- Raytheon Company
- Hooman Kazemi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODE STRUCTURE FOR FIELD EFFECT TRANSISTOR
- Publication number 20190097001
- Publication date Mar 28, 2019
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE STRUCTURE HAVING GOLD-FREE CONTACT AND METHODS FOR FORMING...
- Publication number 20180240753
- Publication date Aug 23, 2018
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE STRUCTURE HAVING GOLD-FREE CONTACT AND METHODS FOR FORMING...
- Publication number 20180240754
- Publication date Aug 23, 2018
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURES FOR FORMING MICROSTRIP TRANSMISSION LINES ON...
- Publication number 20160211136
- Publication date Jul 21, 2016
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING GROWTH OF NON-UNIFORMITIES AND AUTODOPING DURIN...
- Publication number 20150059640
- Publication date Mar 5, 2015
- Raytheon Company
- Jeffrey R. LaRoche
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND STRUCTURE HAVING MONOLITHIC HETEROGENEOUS INTEGRATION OF...
- Publication number 20130082281
- Publication date Apr 4, 2013
- Raytheon Company
- Jeffrey R. LaRoche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GOLD-FREE OHMIC CONTACTS
- Publication number 20120305931
- Publication date Dec 6, 2012
- Raytheon Company
- Ram V. Chelakara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Passivation Layer for a Circuit Device and Method of Manufacture
- Publication number 20100120254
- Publication date May 13, 2010
- Raytheon Company
- John M. Bedinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PACKAGING SEMICONDUCTORS AT A WAFER LEVEL
- Publication number 20080308922
- Publication date Dec 18, 2008
- Yiwen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Passivation Layer for a Circuit Device and Method of Manufacture
- Publication number 20080185174
- Publication date Aug 7, 2008
- John M. Bedinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MMIC having back-side multi-layer signal routing
- Publication number 20070020915
- Publication date Jan 25, 2007
- Raytheon Company
- Christopher P. McCarroll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Monolithic integrated circuit having enhanced breakdown voltage
- Publication number 20060175631
- Publication date Aug 10, 2006
- Raytheon Company
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor devices having a substrate whi...
- Publication number 20050258459
- Publication date Nov 24, 2005
- Kiuchul Hwang
- H01 - BASIC ELECTRIC ELEMENTS

Thomas E. Kazior

Person

Patents Grantslast 30 patents

Group III-V semiconductor structures having crystalline regrowth la...

Hetergenous integration and electro-optic modulation of III-nitride...

Integration of electronics with lithium niobate photonics

Group III-V semiconductor structures having crystalline regrowth la...

Integration of electronics with Lithium Niobate photonics

Electrode structure for field effect transistor

Nitride structures having low capacitance gate contacts integrated...

Wafer structure with mode suppression

Nitride structure having gold-free contact and methods for forming...

Nitride structure having gold-free contact and methods for forming...

Methods and structures for forming microstrip transmission lines on...

Microwave integrated circuit (MMIC) damascene electrical interconne...

Double heterojunction group III-nitride structures

Method and structure having monolithic heterogeneous integration of...

Gold-free ohmic contacts

Passivation layer for a circuit device and method of manufacture

Passivation layer for a circuit device and method of manufacture

MMIC having back-side multi-layer signal routing

Direct backside interconnect for multiple chip assemblies

Semiconductor structures having dual surface via holes

Selective backside plating of GaAs monolithic microwave integrated...

Method of manufacture TiW alignment mark and implant mask

Simultaneous formation of via hole and tube structures for GaAs mon...

Simultaneous formation of via hole and tub structures for GaAs mono...

Selective backside plating of gaas monolithic microwave integrated...

Patents Applicationslast 30 patents

INTEGRATION OF ELECTRONICS WITH LITHIUM NIOBATE PHOTONICS

INTEGRATION OF ELECTRONICS WITH LITHIUM NIOBATE PHOTONICS

HETEROGENEOUS INTEGRATION AND ELECTRO-OPTIC MODULATION OF III-NITRI...

GROUP III-V SEMICONDUCTOR STRUCTURES HAVING CRYSTALLINE REGROWTH LA...

INTEGRATION OF ELECTRONICS WITH LITHIUM NIOBATE PHOTONICS

GROUP III-V SEMICONDUCTOR STRUCTURES HAVING CRYSTALLINE REGROWTH LA...

INTEGRATION OF ELECTRONICS WITH LITHIUM NIOBATE PHOTONICS

HETERGENOUS INTEGRATION AND ELECTRO-OPTIC MODULATION OF III-NITRIDE...

WAFER STRUCTURE WITH MODE SUPPRESSION

NITRIDE STRUCTURES HAVING LOW CAPACITANCE GATE CONTACTS INTEGRATED...

ELECTRODE STRUCTURE FOR FIELD EFFECT TRANSISTOR

RECONSTITUTED WAFER STRUCTURE

ELECTRODE STRUCTURE FOR FIELD EFFECT TRANSISTOR

NITRIDE STRUCTURE HAVING GOLD-FREE CONTACT AND METHODS FOR FORMING...

NITRIDE STRUCTURE HAVING GOLD-FREE CONTACT AND METHODS FOR FORMING...

METHODS AND STRUCTURES FOR FORMING MICROSTRIP TRANSMISSION LINES ON...

METHOD FOR REDUCING GROWTH OF NON-UNIFORMITIES AND AUTODOPING DURIN...

METHOD AND STRUCTURE HAVING MONOLITHIC HETEROGENEOUS INTEGRATION OF...

GOLD-FREE OHMIC CONTACTS

Passivation Layer for a Circuit Device and Method of Manufacture

METHOD FOR PACKAGING SEMICONDUCTORS AT A WAFER LEVEL

Passivation Layer for a Circuit Device and Method of Manufacture

MMIC having back-side multi-layer signal routing

Monolithic integrated circuit having enhanced breakdown voltage

Method for fabricating semiconductor devices having a substrate whi...