Till Schlosser

Person

Munchen, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method for an integrated semiconductor structure
- Patent number 7,595,262
- Issue date Sep 29, 2009
- Qimonda AG
- Till Schlösser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM memory cell
- Patent number 7,368,752
- Issue date May 6, 2008
- Infineon Technologies AG
- Richard J. Luyken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM cell arrangement with vertical MOS transistors
- Patent number 7,329,916
- Issue date Feb 12, 2008
- Infineon Technologies AG
- Till Schlösser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated read-only memory, method for operating said read-only me...
- Patent number 7,307,865
- Issue date Dec 11, 2007
- Infineon Technologies AG
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with trench capacitor and vertical select transistor an...
- Patent number 7,268,381
- Issue date Sep 11, 2007
- Infineon Technologies AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and corresponding fabrication method
- Patent number 7,045,855
- Issue date May 16, 2006
- Infineon Technologies AG
- Björn Fischer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Arrangement with image sensors
- Patent number 7,030,434
- Issue date Apr 18, 2006
- Infineon Technologies AG
- Wolfgang Krautschneider
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor memory with wordlines conductively connect...
- Patent number 6,956,260
- Issue date Oct 18, 2005
- Infineon Technologies AG
- Dirk Manger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM cell arrangement with vertical MOS transistors, and method for...
- Patent number 6,939,763
- Issue date Sep 6, 2005
- Infineon Technologies AG
- Till Schlösser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a trench capacitor with an insulation collar
- Patent number 6,916,721
- Issue date Jul 12, 2005
- Infineon Technologies AG
- Lars Heineck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Storage cell field and method of producing the same
- Patent number 6,873,000
- Issue date Mar 29, 2005
- Infineon Technologies AG
- Matthias Goldbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Line configuration for bit lines for contact-connecting at least on...
- Patent number 6,861,688
- Issue date Mar 1, 2005
- Infineon Technologies AG
- Dirk Manger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor array and semiconductor memory configuration fabricated...
- Patent number 6,838,724
- Issue date Jan 4, 2005
- Infineon Technologies AG
- Bernhard Kowalski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Read/write amplifier having vertical transistors for a DRAM memory
- Patent number 6,822,916
- Issue date Nov 23, 2004
- Infineon Technologies AG
- Alexander Frey
- G11 - INFORMATION STORAGE
Information Patent Grant
Field effect transistor
- Patent number 6,798,000
- Issue date Sep 28, 2004
- Infineon Technologies AG
- Richard Johannes Luyken
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated memory with a configuration of non-volatile memory cells...
- Patent number 6,798,689
- Issue date Sep 28, 2004
- Infineon Technologies AG
- Gerhard Müller
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated semiconductor memory and fabrication method
- Patent number 6,750,098
- Issue date Jun 15, 2004
- Infineon Technologies AG
- Till Schlösser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FEMFET device and method for producing same
- Patent number 6,737,689
- Issue date May 18, 2004
- Infineon Technologies AG
- Till Schlösser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor circuit system
- Patent number 6,645,822
- Issue date Nov 11, 2003
- Infineon Technologies AG
- Till Schlösser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Miniaturized capacitor with solid-state dielectric, in particular f...
- Patent number 6,642,565
- Issue date Nov 4, 2003
- Infineon Technologies AG
- Emmerich Bertagnolli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a memory cell for a semiconductor memory
- Patent number 6,638,812
- Issue date Oct 28, 2003
- Infineon Technologies AG
- Till Schlosser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate assembly having a depression suitable for an integrated c...
- Patent number 6,608,340
- Issue date Aug 19, 2003
- Infineon Technologies AG
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit configuration and method for manufacturing it
- Patent number 6,576,948
- Issue date Jun 10, 2003
- Infineon Technologies AG
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM memory cell for DRAM memory device and method for manufacturin...
- Patent number 6,566,182
- Issue date May 20, 2003
- Infineon Technologies AG
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a cell of a semiconductor memory
- Patent number 6,566,193
- Issue date May 20, 2003
- Infineon Technologies AG
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM cell system and method for producing same
- Patent number 6,566,187
- Issue date May 20, 2003
- Infineon Technologies AG
- Josef Willer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric transistor and method for fabricating it
- Patent number 6,538,273
- Issue date Mar 25, 2003
- Infineon Technologies AG
- Josef Willer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated dynamic memory cell having a small area of extent, and a...
- Patent number 6,534,820
- Issue date Mar 18, 2003
- Infineon Technologies AG
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mos transistor and dram cell configuration
- Patent number 6,521,935
- Issue date Feb 18, 2003
- Infineon Technologies AG
- Wolfgang Krautschneider
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell configuration with capacitor on opposite surface of sub...
- Patent number 6,518,613
- Issue date Feb 11, 2003
- Infineon Technologies AG
- Josef Willer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Die with a Vertical Power Transistor Device
- Publication number 20240243130
- Publication date Jul 18, 2024
- Infineon Technologies Austria AG
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR HAVING A DIELECTRIC STRUCTURE
- Publication number 20230246068
- Publication date Aug 3, 2023
- INFINEON TECHNOLOGIES AG
- Chi Dong Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method for an integrated semiconductor structure
- Publication number 20080102578
- Publication date May 1, 2008
- Till Schlosser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for producing a web of a semiconductor material
- Publication number 20050287772
- Publication date Dec 29, 2005
- Infineon Technologies AG
- Till Schlosser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM cell arrangement with vertical MOS transistors
- Publication number 20050253180
- Publication date Nov 17, 2005
- Till Schlosser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated read-only memory, method for operating said read-only me...
- Publication number 20050201187
- Publication date Sep 15, 2005
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication method for a trench capacitor with an insulation collar
- Publication number 20050153507
- Publication date Jul 14, 2005
- Infineon Technologies AG
- Thomas Hecht
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM memory cell and method for fabricating such a DRAM memory cell
- Publication number 20040266088
- Publication date Dec 30, 2004
- Infineon Technologies AG
- Richard J. Luyken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM cell arrangement with vertical MOS transistors, and method for...
- Publication number 20040259312
- Publication date Dec 23, 2004
- Till Schlosser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory cell with trench capacitor and vertical select transistor an...
- Publication number 20040232466
- Publication date Nov 25, 2004
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and corresponding fabrication method
- Publication number 20040229424
- Publication date Nov 18, 2004
- Infineon Technologies AG
- Bjorn Fischer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a trench capacitor with an insulation collar
- Publication number 20040197988
- Publication date Oct 7, 2004
- Infineon Technologies AG
- Lars Heineck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor array and semiconductor memory configuration fabricated...
- Publication number 20040104418
- Publication date Jun 3, 2004
- Bernhard Kowalski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated semiconductor memory and fabrication method
- Publication number 20040014287
- Publication date Jan 22, 2004
- Till Schlosser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated semiconductor memory and fabrication method
- Publication number 20030232470
- Publication date Dec 18, 2003
- Dirk Manger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated memory with a configuration of non-volatile memory cells...
- Publication number 20030206465
- Publication date Nov 6, 2003
- Gerhard Muller
- G11 - INFORMATION STORAGE
Information Patent Application
Field effect transistor
- Publication number 20030148562
- Publication date Aug 7, 2003
- Richard Johannes Luyken
- G11 - INFORMATION STORAGE
Information Patent Application
Line configuration for bit lines for contact-connecting at least on...
- Publication number 20030087519
- Publication date May 8, 2003
- Dirk Manger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Storage cell field and method of producing the same
- Publication number 20030072198
- Publication date Apr 17, 2003
- Matthias Goldbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing a cell of a semiconductor memory
- Publication number 20020127796
- Publication date Sep 12, 2002
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing a memory cell for a semiconductor memory
- Publication number 20020127803
- Publication date Sep 12, 2002
- Till Schlosser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a semiconductor circuit system
- Publication number 20020102828
- Publication date Aug 1, 2002
- Till Schlosser
- B82 - NANO-TECHNOLOGY
Information Patent Application
MOS transistor and method for fabricating it, and DRAM cell configu...
- Publication number 20020096699
- Publication date Jul 25, 2002
- Wolfgang Krautschneider
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM cell configuration and fabrication method
- Publication number 20020079527
- Publication date Jun 27, 2002
- Till Schlosser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR OPERATING A MEMORY CELL CONFIGURATION HAVING DYNAMIC GAI...
- Publication number 20020075723
- Publication date Jun 20, 2002
- Franz Hofmann
- G11 - INFORMATION STORAGE
Information Patent Application
Memory cell configuration and method for fabricating it
- Publication number 20020071320
- Publication date Jun 13, 2002
- Josef Willer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM configuration
- Publication number 20020039308
- Publication date Apr 4, 2002
- Dietmar Gogl
- G11 - INFORMATION STORAGE
Information Patent Application
Miniaturized capacitor with solid-state dielectric, in particular f...
- Publication number 20020036312
- Publication date Mar 28, 2002
- Emmerich Bertagnolli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a capacitor structure
- Publication number 20020025629
- Publication date Feb 28, 2002
- Siemens Aktiengesellschaft
- Gerrit Lange
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM memory cell for DRAM memory device and method for manufacturin...
- Publication number 20020017668
- Publication date Feb 14, 2002
- Franz Hofmann
- H01 - BASIC ELECTRIC ELEMENTS

Till Schlosser

Person

Patents Grantslast 30 patents

Manufacturing method for an integrated semiconductor structure

DRAM memory cell

DRAM cell arrangement with vertical MOS transistors

Integrated read-only memory, method for operating said read-only me...

Memory cell with trench capacitor and vertical select transistor an...

Semiconductor device and corresponding fabrication method

Arrangement with image sensors

Integrated semiconductor memory with wordlines conductively connect...

DRAM cell arrangement with vertical MOS transistors, and method for...

Method for fabricating a trench capacitor with an insulation collar

Storage cell field and method of producing the same

Line configuration for bit lines for contact-connecting at least on...

Transistor array and semiconductor memory configuration fabricated...

Read/write amplifier having vertical transistors for a DRAM memory

Field effect transistor

Integrated memory with a configuration of non-volatile memory cells...

Integrated semiconductor memory and fabrication method

FEMFET device and method for producing same

Method for manufacturing a semiconductor circuit system

Miniaturized capacitor with solid-state dielectric, in particular f...

Method for producing a memory cell for a semiconductor memory

Substrate assembly having a depression suitable for an integrated c...

Integrated circuit configuration and method for manufacturing it

DRAM memory cell for DRAM memory device and method for manufacturin...

Method for producing a cell of a semiconductor memory

DRAM cell system and method for producing same

Ferroelectric transistor and method for fabricating it

Integrated dynamic memory cell having a small area of extent, and a...

Mos transistor and dram cell configuration

Memory cell configuration with capacitor on opposite surface of sub...

Patents Applicationslast 30 patents

Semiconductor Die with a Vertical Power Transistor Device

FIELD EFFECT TRANSISTOR HAVING A DIELECTRIC STRUCTURE

Manufacturing method for an integrated semiconductor structure

Process for producing a web of a semiconductor material

DRAM cell arrangement with vertical MOS transistors

Integrated read-only memory, method for operating said read-only me...

Fabrication method for a trench capacitor with an insulation collar

DRAM memory cell and method for fabricating such a DRAM memory cell

DRAM cell arrangement with vertical MOS transistors, and method for...

Memory cell with trench capacitor and vertical select transistor an...

Semiconductor device and corresponding fabrication method

Method for fabricating a trench capacitor with an insulation collar

Transistor array and semiconductor memory configuration fabricated...

Integrated semiconductor memory and fabrication method

Integrated semiconductor memory and fabrication method

Integrated memory with a configuration of non-volatile memory cells...

Field effect transistor

Line configuration for bit lines for contact-connecting at least on...

Storage cell field and method of producing the same

Method for producing a cell of a semiconductor memory

Method for producing a memory cell for a semiconductor memory

Method for manufacturing a semiconductor circuit system

MOS transistor and method for fabricating it, and DRAM cell configu...

DRAM cell configuration and fabrication method

METHOD FOR OPERATING A MEMORY CELL CONFIGURATION HAVING DYNAMIC GAI...

Memory cell configuration and method for fabricating it

MRAM configuration

Miniaturized capacitor with solid-state dielectric, in particular f...

Method of fabricating a capacitor structure

DRAM memory cell for DRAM memory device and method for manufacturin...