Toshiharu Watanabe

Person

Yokohama-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor memory device
- Patent number 9,165,628
- Issue date Oct 20, 2015
- Kabushiki Kaisha Toshiba
- Toshiharu Watanabe
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 9,093,140
- Issue date Jul 28, 2015
- Kabushiki Kaisha Toshiba
- Toshiharu Watanabe
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 8,711,602
- Issue date Apr 29, 2014
- Kabushiki Kaisha Toshiba
- Toshiharu Watanabe
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device and method of fabrication of the same
- Patent number 8,354,318
- Issue date Jan 15, 2013
- Kabushiki Kaisha Toshiba
- Toshiharu Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of fabrication of the same
- Patent number 7,884,414
- Issue date Feb 8, 2011
- Kabushiki Kaisha Toshiba
- Toshiharu Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor memory device and data erase/write method...
- Patent number 7,742,331
- Issue date Jun 22, 2010
- Kabushiki Kaisha Toshiba
- Toshiharu Watanabe
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having MISFETs
- Patent number 6,900,086
- Issue date May 31, 2005
- Kabushiki Kaisha Toshiba
- Seiichi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile semiconductor memory device and method of manufacturin...
- Patent number 6,667,211
- Issue date Dec 23, 2003
- Kabushiki Kaisha Toshiba
- Toshiharu Watanabe
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile semiconductor memory device and method of manufacturin...
- Patent number 6,512,262
- Issue date Jan 28, 2003
- Kabushiki Kaisha Toshiba
- Toshiharu Watanabe
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having MISFETs
- Patent number 6,376,879
- Issue date Apr 23, 2002
- Kabushiki Kaisha Toshiba
- Seiichi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor memory device
- Patent number 6,342,715
- Issue date Jan 29, 2002
- Kabushiki Kaisha Toshiba
- Kazuhiro Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor memory device
- Patent number 6,340,611
- Issue date Jan 22, 2002
- Kabushiki Kaisha Toshiba
- Kazuhiro Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices with alleviated elect...
- Patent number 6,228,717
- Issue date May 8, 2001
- Kabushiki Kaisha Toshiba
- Hiroaki Hazama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having a first source line arranged bet...
- Patent number 6,160,297
- Issue date Dec 12, 2000
- Kabushiki Kaisha Toshiba
- Kazuhiro Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having a plurality of memory cell trans...
- Patent number 6,157,056
- Issue date Dec 5, 2000
- Kabushiki Kaisha Toshiba
- Yuji Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile semiconductor memory device with inter-layer insulatio...
- Patent number 6,133,601
- Issue date Oct 17, 2000
- Kabushiki Kaisha Toshiba
- Toshiharu Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET having improved driving performance
- Patent number 5,640,035
- Issue date Jun 17, 1997
- Kabushiki Kaisha Toshiba
- Akira Sudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically erasable programmable read only memory device with an...
- Patent number 5,591,999
- Issue date Jan 7, 1997
- Kabushiki Kaisha Toshiba
- Masaki Momodomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile semiconductor memory device capable of preventing exce...
- Patent number 5,559,736
- Issue date Sep 24, 1996
- Kabushiki Kaisha Toshiba
- Naohiro Matsukawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device having a trench capacitor
- Patent number 5,309,008
- Issue date May 3, 1994
- Kabushiki Kaisha Toshiba
- Toshiharu Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device with a 3-dimensional structure
- Patent number 5,091,762
- Issue date Feb 25, 1992
- Kabushiki Kaisha Toshiba
- Toshiharu Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench dual-gate MOSFET
- Patent number 4,975,754
- Issue date Dec 4, 1990
- Kabushiki Kaisha Toshiba
- Hidemi Ishiuchi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20150269983
- Publication date Sep 24, 2015
- KABUSHIKI KAISHA TOSHIBA
- Toshiharu WATANABE
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20140204653
- Publication date Jul 24, 2014
- KABUSHIKI KAISHA TOSHIBA
- Toshiharu WATANABE
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20120243296
- Publication date Sep 27, 2012
- Kabushiki Kaisha Toshiba
- Toshiharu WATANABE
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATION OF THE SAME
- Publication number 20110097862
- Publication date Apr 28, 2011
- Toshiharu Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF...
- Publication number 20080246072
- Publication date Oct 9, 2008
- Kabushiki Kaisha Toshiba
- Masaki Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND DATA ERASE/WRITE METHOD...
- Publication number 20080239799
- Publication date Oct 2, 2008
- TOSHIHARU WATANABE
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATION OF THE SAME
- Publication number 20080217674
- Publication date Sep 11, 2008
- Toshiharu Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having MISFETs
- Publication number 20030203605
- Publication date Oct 30, 2003
- KABUSHIKI KAISHA TOSHIBA
- Seiichi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile semiconductor memory device and method of manufacturin...
- Publication number 20030082879
- Publication date May 1, 2003
- Kabushiki Kaisha Toshiba
- Toshiharu Watanabe
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor device having MISFETs
- Publication number 20020098652
- Publication date Jul 25, 2002
- KABUSHIKI KAISHA TOSHIBA
- Seiichi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING MISFETS
- Publication number 20020000617
- Publication date Jan 3, 2002
- SEIICHI MORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURIN...
- Publication number 20010045585
- Publication date Nov 29, 2001
- TOSHIHARU WATANABE
- H01 - BASIC ELECTRIC ELEMENTS

Toshiharu Watanabe

Person

Patents Grantslast 30 patents

Semiconductor memory device

Semiconductor memory device

Semiconductor memory device

Semiconductor memory device and method of fabrication of the same

Semiconductor memory device and method of fabrication of the same

Nonvolatile semiconductor memory device and data erase/write method...

Semiconductor device having MISFETs

Non-volatile semiconductor memory device and method of manufacturin...

Non-volatile semiconductor memory device and method of manufacturin...

Semiconductor device having MISFETs

Nonvolatile semiconductor memory device

Nonvolatile semiconductor memory device

Method of manufacturing semiconductor devices with alleviated elect...

Semiconductor memory device having a first source line arranged bet...

Semiconductor memory device having a plurality of memory cell trans...

Non-volatile semiconductor memory device with inter-layer insulatio...

MOSFET having improved driving performance

Electrically erasable programmable read only memory device with an...

Non-volatile semiconductor memory device capable of preventing exce...

Semiconductor memory device having a trench capacitor

Semiconductor memory device with a 3-dimensional structure

Trench dual-gate MOSFET

Patents Applicationslast 30 patents

SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATION OF THE SAME

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF...

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND DATA ERASE/WRITE METHOD...

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATION OF THE SAME

Semiconductor device having MISFETs

Non-volatile semiconductor memory device and method of manufacturin...

Semiconductor device having MISFETs

SEMICONDUCTOR DEVICE HAVING MISFETS

NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURIN...