Tsunenobu Kimoto

Person

Kyoto-fu, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with carbon-density-decreasing region
- Patent number 11,996,449
- Issue date May 28, 2024
- Rohm Co., Ltd.
- Tsunenobu Kimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with carbon-density-decreasing region
- Patent number 11,502,172
- Issue date Nov 15, 2022
- Rohm Co., Ltd.
- Tsunenobu Kimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gettering process for producing semiconductor device
- Patent number 9,508,802
- Issue date Nov 29, 2016
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of production of SiC semiconductor device
- Patent number 9,190,482
- Issue date Nov 17, 2015
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film deposition apparatus and film deposition method
- Patent number 8,696,814
- Issue date Apr 15, 2014
- Tokyo Electron Limited
- Eisuke Morisaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
P-type SiC semiconductor
- Patent number 8,399,888
- Issue date Mar 19, 2013
- Toyota Jidosha Kabushiki Kaisha
- Hiroaki Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number RE43840
- Issue date Dec 4, 2012
- Denso Corporation
- Mitsuhiro Kataoka
- 257 - Active solid-state devices
Information Patent Grant
Method of SiC single crystal growth and SiC single crystal
- Patent number 7,837,789
- Issue date Nov 23, 2010
- Toyota Jidosha Kabushiki Kaisha
- Tsunenobu Kimoto
Information Patent Grant
Lateral junction field effect transistor and method of manufacturin...
- Patent number 7,671,387
- Issue date Mar 2, 2010
- Sumitomo Electric Industries, Ltd.
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral junction field effect transistor and method of manufacturin...
- Patent number 7,671,388
- Issue date Mar 2, 2010
- Sumitomo Electric Industries, Ltd.
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral junction field-effect transistor
- Patent number 7,528,426
- Issue date May 5, 2009
- Sumitomo Electric Industries, Ltd
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral junction field effect transistor and method of manufacturin...
- Patent number 7,420,232
- Issue date Sep 2, 2008
- Sumitomo Electric Industries, Ltd.
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 7,321,142
- Issue date Jan 22, 2008
- Sumitomo Electric Industries, Ltd
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device having trench in sili...
- Patent number 7,241,694
- Issue date Jul 10, 2007
- Denso Corporation
- Yuuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral junction field effect transistor and method of manufacturin...
- Patent number 7,049,644
- Issue date May 23, 2006
- Sumitomo Electric Industries, Ltd.
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral junction field-effect transistor
- Patent number 7,023,033
- Issue date Apr 4, 2006
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pinch-off type vertical junction field effect transistor and method...
- Patent number 6,870,189
- Issue date Mar 22, 2005
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 6,853,006
- Issue date Feb 8, 2005
- Denso Corporation
- Mitsuhiro Kataoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC wafer, SiC semiconductor device, and production method of SiC w...
- Patent number 6,734,461
- Issue date May 11, 2004
- Sixon Inc.
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sic single crystal and method for growing the same
- Patent number 6,660,084
- Issue date Dec 9, 2003
- Sixon, Inc.
- Hiromu Shiomi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor heterojunction structure
- Patent number 5,476,812
- Issue date Dec 19, 1995
- Sumitomo Electric Industries, Ltd.
- Tsunenobu Kimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing thin film
- Patent number 5,250,149
- Issue date Oct 5, 1993
- Sumitomo Electric Industries, Ltd.
- Tsunenobu Kimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor heterojunction structure
- Patent number 5,117,267
- Issue date May 26, 1992
- Sumitomo Electric Industries, Ltd.
- Tsunenobu Kimoto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SiC JUNCTION FIELD EFFECT TRANSISTOR AND SiC COMPLEMENTARY JUNCTION...
- Publication number 20250107188
- Publication date Mar 27, 2025
- Kyoto University
- Mitsuaki KANEKO
Information Patent Application
SEMICONDUCTOR DEVICE WITH CARBON-DENSITY-DECREASING REGION
- Publication number 20240258380
- Publication date Aug 1, 2024
- ROHM CO., LTD.
- Tsunenobu KIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SiC MOSFET
- Publication number 20240071764
- Publication date Feb 29, 2024
- KYOTO UNIVERSITY
- Tsunenobu KIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SIC SEMICONDUCTOR...
- Publication number 20230307503
- Publication date Sep 28, 2023
- KYOTO UNIVERSITY
- Tsunenobu KIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20230019556
- Publication date Jan 19, 2023
- ROHM CO., LTD.
- Tsunenobu KIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20200403069
- Publication date Dec 24, 2020
- Rohm Co., Ltd.
- Tsunenobu KIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20150064882
- Publication date Mar 5, 2015
- Katsunori Danno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCTION OF SIC SEMICONDUCTOR DEVICE
- Publication number 20130059429
- Publication date Mar 7, 2013
- Katsunori Danno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE SiC SEMICONDUCTOR
- Publication number 20110210341
- Publication date Sep 1, 2011
- Hiroaki Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD
- Publication number 20100092666
- Publication date Apr 15, 2010
- TOKYO ELECTRON LIMITED
- Eisuke Morisaki
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD
- Publication number 20100072485
- Publication date Mar 25, 2010
- KYOTO UNIVERSITY
- Jun Suda
- G02 - OPTICS
Information Patent Application
LATERAL JUNCTION FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURIN...
- Publication number 20090315082
- Publication date Dec 24, 2009
- Sumitomo Electric Industries, Ltd.
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
4H-POLYTYPE GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE ON A 4H-POLY...
- Publication number 20090261362
- Publication date Oct 22, 2009
- PANASONIC CORPORATION
- Tetsuzo UEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compound semiconductor device and method for fabricating compound s...
- Publication number 20090072243
- Publication date Mar 19, 2009
- KYOTO UNIVERSITY
- Jun Suda
- G02 - OPTICS
Information Patent Application
Lateral Junction Field Effect Transistor and Method of Manufacturin...
- Publication number 20080277696
- Publication date Nov 13, 2008
- Sumitomo Electric Industries, Ltd.
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Sic Single Crystal Growth and Sic Single Crystal
- Publication number 20070221119
- Publication date Sep 27, 2007
- Toyota Jidosha Kabushiki Kaisha
- Tsunenobu Kimoto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Lateral junction field effect transistor and method of manufacturin...
- Publication number 20060202238
- Publication date Sep 14, 2006
- Sumitomo Electric Industries, Ltd.
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral junction field-effect transistor
- Publication number 20060118813
- Publication date Jun 8, 2006
- Sumitomo Electric Industries, Ltd.
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor
- Publication number 20060113574
- Publication date Jun 1, 2006
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing semiconductor device having trench in sili...
- Publication number 20050233539
- Publication date Oct 20, 2005
- Yuuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
4H-polytype gallium nitride-based semiconductor device on a 4H-poly...
- Publication number 20050218414
- Publication date Oct 6, 2005
- Tetsuzo Ueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral junctiion field-effect transistor and its manufacturing method
- Publication number 20050093017
- Publication date May 5, 2005
- Kazuhiro Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device
- Publication number 20040051136
- Publication date Mar 18, 2004
- Mitsuhiro Kataoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral junction type field effect transistor
- Publication number 20030168704
- Publication date Sep 11, 2003
- Shin Harada
- H01 - BASIC ELECTRIC ELEMENTS

Tsunenobu Kimoto

Person

Patents Grantslast 30 patents

Semiconductor device with carbon-density-decreasing region

Semiconductor device with carbon-density-decreasing region

Gettering process for producing semiconductor device

Method of production of SiC semiconductor device

Film deposition apparatus and film deposition method

P-type SiC semiconductor

Silicon carbide semiconductor device

Method of SiC single crystal growth and SiC single crystal

Lateral junction field effect transistor and method of manufacturin...

Lateral junction field effect transistor and method of manufacturin...

Lateral junction field-effect transistor

Lateral junction field effect transistor and method of manufacturin...

Field effect transistor

Method for manufacturing semiconductor device having trench in sili...

Lateral junction field effect transistor and method of manufacturin...

Lateral junction field-effect transistor

Pinch-off type vertical junction field effect transistor and method...

Silicon carbide semiconductor device

SiC wafer, SiC semiconductor device, and production method of SiC w...

Sic single crystal and method for growing the same

Semiconductor heterojunction structure

Method of growing thin film

Semiconductor heterojunction structure

Patents Applicationslast 30 patents

SiC JUNCTION FIELD EFFECT TRANSISTOR AND SiC COMPLEMENTARY JUNCTION...

SEMICONDUCTOR DEVICE WITH CARBON-DENSITY-DECREASING REGION

SiC SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SiC MOSFET

SIC SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SIC SEMICONDUCTOR...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

METHOD OF PRODUCTION OF SIC SEMICONDUCTOR DEVICE

P-TYPE SiC SEMICONDUCTOR

FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD

LATERAL JUNCTION FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURIN...

4H-POLYTYPE GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE ON A 4H-POLY...

Compound semiconductor device and method for fabricating compound s...

Lateral Junction Field Effect Transistor and Method of Manufacturin...

Method of Sic Single Crystal Growth and Sic Single Crystal

Lateral junction field effect transistor and method of manufacturin...

Lateral junction field-effect transistor

Field effect transistor

Method for manufacturing semiconductor device having trench in sili...

4H-polytype gallium nitride-based semiconductor device on a 4H-poly...

Lateral junctiion field-effect transistor and its manufacturing method

Silicon carbide semiconductor device

Lateral junction type field effect transistor