Umesh K. Mishra

Person

Santa Barbara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Lateral III-nitride devices including a vertical gate module
- Patent number 12,266,725
- Issue date Apr 1, 2025
- Transphorm Technology, Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N based material structures, methods, devices and circuit modul...
- Patent number 12,230,678
- Issue date Feb 18, 2025
- The Regents of the University of California
- Umesh K. Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to control the relaxation of thick films on lattice-mismatch...
- Patent number 12,211,955
- Issue date Jan 28, 2025
- The Regents of the University of California
- Kamruzzaman Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High mobility group-III nitride transistors with strained channels
- Patent number 12,159,929
- Issue date Dec 3, 2024
- The Regents of the University of California
- Stacia Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-polar devices including a depleting layer with improved conductivity
- Patent number 11,973,138
- Issue date Apr 30, 2024
- Transphorm Technology, Inc.
- Geetak Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide bandgap transistors with gate-source field plates
- Patent number 11,791,385
- Issue date Oct 17, 2023
- Wolfspeed, Inc.
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide bandgap field effect transistors with source connected field p...
- Patent number 11,664,429
- Issue date May 30, 2023
- Wolfspeed, Inc.
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistor structures with stepped cap layers
- Patent number 11,594,625
- Issue date Feb 28, 2023
- The Regents of the University of California
- Matthew Guidry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to achieve active p-type layer/layers in III-nitrtde epitaxi...
- Patent number 11,588,096
- Issue date Feb 21, 2023
- The Regents of the University of California
- Yuuki Enatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode III-nitride devices having an Al1-xSixO gate insul...
- Patent number 11,322,599
- Issue date May 3, 2022
- Transphorm Technology, Inc.
- Carl Joseph Neufeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride devices including a graded depleting layer
- Patent number 11,121,216
- Issue date Sep 14, 2021
- Transphorm Technology, Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for increasing mobility in a high electron mobility trans...
- Patent number 11,101,379
- Issue date Aug 24, 2021
- THEREGENIS OF THE UNIVERSITY OF CALIFORNIA
- Brian Romanczyk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral III-nitride devices including a vertical gate module
- Patent number 10,756,207
- Issue date Aug 25, 2020
- Transphorm Technology, Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride devices including a graded depleting layer
- Patent number 10,629,681
- Issue date Apr 21, 2020
- Transphorm Technology, Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N...
- Patent number 10,529,892
- Issue date Jan 7, 2020
- The Regents of the University of California
- Robert M. Farrell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Trenched vertical power field-effect transistors with improved on-r...
- Patent number 10,312,361
- Issue date Jun 4, 2019
- The Regents of the University of California
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulting gate AlGaN/GaN HEMT
- Patent number 10,224,427
- Issue date Mar 5, 2019
- Cree, Inc.
- Primit Parikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride devices including a graded depleting layer
- Patent number 10,224,401
- Issue date Mar 5, 2019
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming reverse side engineered III-nitride devices
- Patent number 10,199,217
- Issue date Feb 5, 2019
- Transphorm Inc.
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of single or multiple gate field plates
- Patent number 10,109,713
- Issue date Oct 23, 2018
- The Regents of the University of California
- Alessandro Chini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-Nitride transistor including a III-N depleting layer
- Patent number 10,043,896
- Issue date Aug 7, 2018
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode III-N HEMTs
- Patent number 9,941,399
- Issue date Apr 10, 2018
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming enhancement mode III-nitride devices
- Patent number 9,935,190
- Issue date Apr 3, 2018
- Transphorm Inc.
- Mo Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride transistor including a p-type depleting layer
- Patent number 9,842,922
- Issue date Dec 12, 2017
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N...
- Patent number 9,793,435
- Issue date Oct 17, 2017
- The Regents of the University of California
- Robert M. Farrell
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Wide bandgap field effect transistors with source connected field p...
- Patent number 9,773,877
- Issue date Sep 26, 2017
- Cree, Inc.
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling stress in group-III nitride films deposited o...
- Patent number 9,691,712
- Issue date Jun 27, 2017
- The Regents of the University of California
- Hugues Marchand
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor devices with integrated hole collectors
- Patent number 9,634,100
- Issue date Apr 25, 2017
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current aperture vertical electron transistors with ammonia molecul...
- Patent number 9,590,088
- Issue date Mar 7, 2017
- The Regents of the University of California
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrodes for semiconductor devices and methods of forming the same
- Patent number 9,520,491
- Issue date Dec 13, 2016
- Transphorm Inc.
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
N-POLAR DEVICES INCLUDING A DEPLETING LAYER WITH IMPROVED CONDUCTIVITY
- Publication number 20250107132
- Publication date Mar 27, 2025
- Transphorm Technology, Inc.
- Geetak Gupta
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MODULE ASSEMBLY OF MULTIPLE SEMICONDUCTOR DEVICES WITH INSULATING S...
- Publication number 20240421139
- Publication date Dec 19, 2024
- Transphorm Technology, Inc.
- Davide Bisi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR RELAXING SEMICONDUCTOR FILMS INCLUDING THE FABRICATION O...
- Publication number 20240063340
- Publication date Feb 22, 2024
- The Regents of the University of California
- Stacia Keller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP TRANSISTORS WITH GATE-SOURCE FIELD PLATES
- Publication number 20230420526
- Publication date Dec 28, 2023
- Wolfspeed, Inc.
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE DEVICES WITH THROUGH-VIA STRUCTURES
- Publication number 20230335464
- Publication date Oct 19, 2023
- Transphorm Technology, Inc.
- Geetak Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE DEVICES INCLUDING A DEPLETING LAYER
- Publication number 20230299190
- Publication date Sep 21, 2023
- Transphorm Technology, Inc.
- Davide Bisi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO CONTROL THE RELAXATION OF THICK FILMS ON LATTICE-MISMATCH...
- Publication number 20220399475
- Publication date Dec 15, 2022
- The Regents of the University of California
- Kamruzzaman Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-POLAR III-N SEMICONDUCTOR DEVICE STRUCTURES
- Publication number 20220223429
- Publication date Jul 14, 2022
- The Regents of the University of California
- Brian Romanczyk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-POLAR DEVICES INCLUDING A DEPLETING LAYER WITH IMPROVED CONDUCTIVITY
- Publication number 20220157981
- Publication date May 19, 2022
- Transphorm Technology, Inc.
- Geetak Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER BONDING FOR EMBEDDING ACTIVE REGIONS WITH RELAXED NANOFEATURES
- Publication number 20220102580
- Publication date Mar 31, 2022
- The Regents of the University of California
- Caroline E. Reilly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N BASED MATERIAL STRUCTURES, METHODS, DEVICES AND CIRCUIT MODUL...
- Publication number 20210399096
- Publication date Dec 23, 2021
- The Regents of the University of California
- Umesh K. Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL APPROACH TO CONTROLLING LINEARITY IN N-POLAR GAN MISHEMTS
- Publication number 20210399121
- Publication date Dec 23, 2021
- The Regents of the University of California
- Brian Romanczyk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT MODE III-NITRIDE DEVICES HAVING AN AL1-XSIXO GATE INSUL...
- Publication number 20210043750
- Publication date Feb 11, 2021
- Transphorm Technology, Inc.
- Carl Joseph Neufeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL III-NITRIDE DEVICES INCLUDING A VERTICAL GATE MODULE
- Publication number 20200343375
- Publication date Oct 29, 2020
- Transphorm Technology, Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-N TRANSISTOR STRUCTURES WITH STEPPED CAP LAYERS
- Publication number 20200273974
- Publication date Aug 27, 2020
- The Regents of the University of California
- Matthew Guidry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE DEVICES INCLUDING A GRADED DEPLETING LAYER
- Publication number 20200212180
- Publication date Jul 2, 2020
- Transphorm Technology, Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL III-NITRIDE DEVICES INCLUDING A VERTICAL GATE MODULE
- Publication number 20200119179
- Publication date Apr 16, 2020
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A STRUCTURE FOR INCREASING MOBILITY IN A HIGH ELECTRON MOBILITY TRA...
- Publication number 20190348532
- Publication date Nov 14, 2019
- The Regents of the University of California
- Brian Romanczyk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE DEVICES INCLUDING A GRADED DEPLETING LAYER
- Publication number 20190198615
- Publication date Jun 27, 2019
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO ACHIEVE ACTIVE P-TYPE LAYER/LAYERS IN III-NITRIDE EPITAXI...
- Publication number 20190181329
- Publication date Jun 13, 2019
- The Regents of the University of California
- Yuuki Enatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE DEVICES INCLUDING A GRADED DEPLETING LAYER
- Publication number 20180158909
- Publication date Jun 7, 2018
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE TRANSISTOR INCLUDING A III-N DEPLETING LAYER
- Publication number 20180102425
- Publication date Apr 12, 2018
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N...
- Publication number 20180013035
- Publication date Jan 11, 2018
- The Regents of the University of California
- Robert M. Farrell
- B82 - NANO-TECHNOLOGY
Information Patent Application
WIDE BANDGAP FIELD EFFECT TRANSISTORS WITH SOURCE CONNECTED FIELD P...
- Publication number 20170365670
- Publication date Dec 21, 2017
- CREE, INC.
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCHED VERTICAL POWER FIELD-EFFECT TRANSISTORS WITH IMPROVED ON-R...
- Publication number 20170125574
- Publication date May 4, 2017
- The Regents of the University of Calfornia
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING REVERSE SIDE ENGINEERED III-NITRIDE DEVICES
- Publication number 20170025267
- Publication date Jan 26, 2017
- TRANSPHORM INC.
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF SINGLE OR MULTIPLE GATE FIELD PLATES
- Publication number 20170025506
- Publication date Jan 26, 2017
- The Regents of the University of California
- Alessandro Chini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhancement Mode III-N HEMTs
- Publication number 20160359030
- Publication date Dec 8, 2016
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE TRANSISTOR INCLUDING A P-TYPE DEPLETING LAYER
- Publication number 20160343840
- Publication date Nov 24, 2016
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE POWER DEVICES
- Publication number 20160254363
- Publication date Sep 1, 2016
- TRANSPHORM INC.
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS

Umesh K. Mishra

Person

Patents Grantslast 30 patents

Lateral III-nitride devices including a vertical gate module

III-N based material structures, methods, devices and circuit modul...

Method to control the relaxation of thick films on lattice-mismatch...

High mobility group-III nitride transistors with strained channels

N-polar devices including a depleting layer with improved conductivity

Wide bandgap transistors with gate-source field plates

Wide bandgap field effect transistors with source connected field p...

III-N transistor structures with stepped cap layers

Method to achieve active p-type layer/layers in III-nitrtde epitaxi...

Enhancement mode III-nitride devices having an Al1-xSixO gate insul...

III-nitride devices including a graded depleting layer

Structure for increasing mobility in a high electron mobility trans...

Lateral III-nitride devices including a vertical gate module

III-nitride devices including a graded depleting layer

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N...

Trenched vertical power field-effect transistors with improved on-r...

Insulting gate AlGaN/GaN HEMT

III-nitride devices including a graded depleting layer

Methods of forming reverse side engineered III-nitride devices

Fabrication of single or multiple gate field plates

III-Nitride transistor including a III-N depleting layer

Enhancement mode III-N HEMTs

Forming enhancement mode III-nitride devices

III-nitride transistor including a p-type depleting layer

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N...

Wide bandgap field effect transistors with source connected field p...

Method of controlling stress in group-III nitride films deposited o...

Semiconductor devices with integrated hole collectors

Current aperture vertical electron transistors with ammonia molecul...

Electrodes for semiconductor devices and methods of forming the same

Patents Applicationslast 30 patents

N-POLAR DEVICES INCLUDING A DEPLETING LAYER WITH IMPROVED CONDUCTIVITY

MODULE ASSEMBLY OF MULTIPLE SEMICONDUCTOR DEVICES WITH INSULATING S...

METHOD FOR RELAXING SEMICONDUCTOR FILMS INCLUDING THE FABRICATION O...

WIDE BANDGAP TRANSISTORS WITH GATE-SOURCE FIELD PLATES

III-NITRIDE DEVICES WITH THROUGH-VIA STRUCTURES

III-NITRIDE DEVICES INCLUDING A DEPLETING LAYER

METHOD TO CONTROL THE RELAXATION OF THICK FILMS ON LATTICE-MISMATCH...

N-POLAR III-N SEMICONDUCTOR DEVICE STRUCTURES

N-POLAR DEVICES INCLUDING A DEPLETING LAYER WITH IMPROVED CONDUCTIVITY

WAFER BONDING FOR EMBEDDING ACTIVE REGIONS WITH RELAXED NANOFEATURES

III-N BASED MATERIAL STRUCTURES, METHODS, DEVICES AND CIRCUIT MODUL...

NOVEL APPROACH TO CONTROLLING LINEARITY IN N-POLAR GAN MISHEMTS

ENHANCEMENT MODE III-NITRIDE DEVICES HAVING AN AL1-XSIXO GATE INSUL...

LATERAL III-NITRIDE DEVICES INCLUDING A VERTICAL GATE MODULE

III-N TRANSISTOR STRUCTURES WITH STEPPED CAP LAYERS

III-NITRIDE DEVICES INCLUDING A GRADED DEPLETING LAYER

LATERAL III-NITRIDE DEVICES INCLUDING A VERTICAL GATE MODULE

A STRUCTURE FOR INCREASING MOBILITY IN A HIGH ELECTRON MOBILITY TRA...

III-NITRIDE DEVICES INCLUDING A GRADED DEPLETING LAYER

METHOD TO ACHIEVE ACTIVE P-TYPE LAYER/LAYERS IN III-NITRIDE EPITAXI...

III-NITRIDE DEVICES INCLUDING A GRADED DEPLETING LAYER

III-NITRIDE TRANSISTOR INCLUDING A III-N DEPLETING LAYER

TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga,Al,In,B)N...

WIDE BANDGAP FIELD EFFECT TRANSISTORS WITH SOURCE CONNECTED FIELD P...

TRENCHED VERTICAL POWER FIELD-EFFECT TRANSISTORS WITH IMPROVED ON-R...

METHODS OF FORMING REVERSE SIDE ENGINEERED III-NITRIDE DEVICES

FABRICATION OF SINGLE OR MULTIPLE GATE FIELD PLATES

Enhancement Mode III-N HEMTs

III-NITRIDE TRANSISTOR INCLUDING A P-TYPE DEPLETING LAYER

GALLIUM NITRIDE POWER DEVICES