Victor Ray Nastasi

Person

Hopewell Junction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods to control the threshold voltage of a deep trench corner de...
- Patent number 6,518,145
- Issue date Feb 11, 2003
- International Business Machines Corporation
- Johann Alsmeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned trench capacitor capping process for high density DRAM...
- Patent number 6,372,573
- Issue date Apr 16, 2002
- Kabushiki Kaisha Toshiba
- Masami Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an insulated gate field effect transistor
- Patent number 5,824,580
- Issue date Oct 20, 1998
- International Business Machines Corporation
- Manfred Hauf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of filling shallow trenches
- Patent number 5,804,490
- Issue date Sep 8, 1998
- International Business Machines Corporation
- Bernhard Fiegl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate field effect transistor
- Patent number 5,757,059
- Issue date May 26, 1998
- International Business Machines Corporation
- Manfred Hauf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit chip having isolation trenches composed of a die...
- Patent number 5,721,448
- Issue date Feb 24, 1998
- International Business Machines Corporation
- Manfred Hauf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a doped region in a semiconductor substrate utili...
- Patent number 5,385,850
- Issue date Jan 31, 1995
- International Business Machines Corporation
- Jack O. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with reduced topography
- Patent number 5,331,199
- Issue date Jul 19, 1994
- International Business Machines Corporation
- Shao-Fu S. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making bipolar transistor with reduced topography
- Patent number 5,234,846
- Issue date Aug 10, 1993
- International Business Machines Corporation
- Shao-Fu S. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench sidewall isolation by polysilicon oxidation
- Patent number 4,666,556
- Issue date May 19, 1987
- International Business Machines Corporation
- Inge G. Fulton
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Self-aligned corner Vt enhancement with isolation channel stop by i...
- Publication number 20020179997
- Publication date Dec 5, 2002
- International Business Machines Corporation
- George R. Goth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED TRENCH CAPACITOR CAPPING PROCESS FOR HIGH DENSITY DRAM...
- Publication number 20010039088
- Publication date Nov 8, 2001
- MASAMI AOKI
- H01 - BASIC ELECTRIC ELEMENTS

Victor Ray Nastasi

Person

Patents Grantslast 30 patents

Methods to control the threshold voltage of a deep trench corner de...

Self-aligned trench capacitor capping process for high density DRAM...

Method of manufacturing an insulated gate field effect transistor

Method of filling shallow trenches

Insulated gate field effect transistor

Integrated circuit chip having isolation trenches composed of a die...

Method of forming a doped region in a semiconductor substrate utili...

Bipolar transistor with reduced topography

Method of making bipolar transistor with reduced topography

Trench sidewall isolation by polysilicon oxidation

Patents Applicationslast 30 patents

Self-aligned corner Vt enhancement with isolation channel stop by i...

SELF-ALIGNED TRENCH CAPACITOR CAPPING PROCESS FOR HIGH DENSITY DRAM...