Wayne I. Kinney

Person

Emmett, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ferroelectric devices and ferroelectric memory cells
- Patent number 12,080,329
- Issue date Sep 3, 2024
- Micron Technology, Inc.
- Albert Liao
- G11 - INFORMATION STORAGE
Information Patent Grant
Devices comprising crystalline materials
- Patent number 12,057,472
- Issue date Aug 6, 2024
- Micron Technology, Inc.
- Michael Mutch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic devices including a seed region and magnetic regions
- Patent number 12,048,167
- Issue date Jul 23, 2024
- Micron Technology, Inc.
- Witold Kula
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory arrays, ferroelectric transistors, and methods of reading an...
- Patent number 11,955,156
- Issue date Apr 9, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Selective reading of memory with improved accuracy
- Patent number 11,789,796
- Issue date Oct 17, 2023
- OVONYX MEMORY TECHNOLOGY, LLC
- Wayne Kinney
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,672,189
- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Transistors, memory cells and semiconductor constructions
- Patent number 11,594,611
- Issue date Feb 28, 2023
- Micron Technology, Inc.
- Durai Vishak Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices comprising crystalline materials and related systems
- Patent number 11,532,699
- Issue date Dec 20, 2022
- Micron Technology, Inc.
- Michael Mutch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies comprising ferroelectric transistors and non-...
- Patent number 11,515,331
- Issue date Nov 29, 2022
- Micron Technology, Inc.
- Wayne I. Kinney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory element with a reactive metal layer
- Patent number 11,502,249
- Issue date Nov 15, 2022
- Hefei Reliance Memory Limited
- Christophe J. Chevallier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures, memory cells and devices comprising ferro...
- Patent number 11,398,263
- Issue date Jul 26, 2022
- Micron Technology, Inc.
- Albert Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic devices with seed and magnetic regions and methods of fa...
- Patent number 11,393,872
- Issue date Jul 19, 2022
- Micron Technology, Inc.
- Witold Kula
- G11 - INFORMATION STORAGE
Information Patent Grant
Selective reading of memory with improved accuracy
- Patent number 11,379,286
- Issue date Jul 5, 2022
- OVONYX MEMORY TECHNOLOGY, LLC
- Wayne Kinney
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory arrays, ferroelectric transistors, and methods of reading an...
- Patent number 11,276,449
- Issue date Mar 15, 2022
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic structures, semiconductor structures, and semiconductor de...
- Patent number 11,158,670
- Issue date Oct 26, 2021
- Micron Technology, Inc.
- Wayne I. Kinney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,063,214
- Issue date Jul 13, 2021
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cell and an array of memory cells
- Patent number 11,037,942
- Issue date Jun 15, 2021
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors, memory cells and semiconductor constructions comprisin...
- Patent number 10,943,986
- Issue date Mar 9, 2021
- Micron Technology, Inc.
- Durai Vishak Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory element with a reactive metal layer
- Patent number 10,833,125
- Issue date Nov 10, 2020
- Hefei Reliance Memory Limited
- Christophe J. Chevallier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive metal oxide structures in non-volatile re-writable memor...
- Patent number 10,803,935
- Issue date Oct 13, 2020
- Unity Semiconductor Corporation
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory element with a reactive metal layer
- Patent number 10,797,106
- Issue date Oct 6, 2020
- Hefei Reliance Memory Limited
- Christophe J. Chevallier
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated assemblies comprising ferroelectric transistors and non-...
- Patent number 10,790,304
- Issue date Sep 29, 2020
- Micron Technology, Inc.
- Wayne I. Kinney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enabling fast pulse operation
- Patent number 10,748,594
- Issue date Aug 18, 2020
- Micron Technology, Inc.
- Gurtej S. Sandhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structures, memory cells and devices comprising ferro...
- Patent number 10,726,899
- Issue date Jul 28, 2020
- Micron Technology, Inc.
- Albert Liao
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming semiconductor structures
- Patent number 10,707,298
- Issue date Jul 7, 2020
- Micron Technology, Inc.
- Michael Mutch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 10,680,171
- Issue date Jun 9, 2020
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory arrays, ferroelectric transistors, and methods of reading an...
- Patent number 10,636,471
- Issue date Apr 28, 2020
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic structures, semiconductor structures, and semiconductor de...
- Patent number 10,586,830
- Issue date Mar 10, 2020
- Micron Technology, Inc.
- Wayne I. Kinney
- G11 - INFORMATION STORAGE
Information Patent Grant
Selective reading of memory with improved accuracy
- Patent number 10,585,735
- Issue date Mar 10, 2020
- OVONYX MEMORY TECHNOLOGY, LLC
- Wayne Kinney
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cell and an array of memory cells
- Patent number 10,553,595
- Issue date Feb 4, 2020
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FERROELECTRIC DEVICES AND FERROELECTRIC MEMORY CELLS
- Publication number 20240395302
- Publication date Nov 28, 2024
- Micron Technology, Inc.
- Albert Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES COMPRISING CRYSTALLINE MATERIALS
- Publication number 20240379739
- Publication date Nov 14, 2024
- Micron Technology, Inc.
- Michael Mutch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays, Ferroelectric Transistors, and Methods of Reading an...
- Publication number 20240265960
- Publication date Aug 8, 2024
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICES COMPRISING CRYSTALLINE MATERIALS
- Publication number 20230074063
- Publication date Mar 9, 2023
- Micron Technology, Inc.
- Michael Mutch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC DEVICES AND FERROELECTRIC MEMORY CELLS
- Publication number 20220351768
- Publication date Nov 3, 2022
- Micron Technology, Inc.
- Albert Liao
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTIVE READING OF MEMORY WITH IMPROVED ACCURACY
- Publication number 20220318084
- Publication date Oct 6, 2022
- Ovonyx Memory Technology, LLC
- Wayne Kinney
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ELECTRONIC DEVICES INCLUDING A SEED REGION AND MAGNETIC REGIONS
- Publication number 20220320179
- Publication date Oct 6, 2022
- Micron Technology, Inc.
- Witold Kula
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Arrays, Ferroelectric Transistors, and Methods of Reading an...
- Publication number 20220157364
- Publication date May 19, 2022
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20210193917
- Publication date Jun 24, 2021
- Hefei Reliance Memory Limited
- Darrell RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Transistors, Memory Cells and Semiconductor Constructions
- Publication number 20210175340
- Publication date Jun 10, 2021
- Micron Technology, Inc.
- Durai Vishak Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...
- Publication number 20210098063
- Publication date Apr 1, 2021
- Unity Semiconductor Corporation
- Lawrence Schloss
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
- Publication number 20210013262
- Publication date Jan 14, 2021
- Hefei Reliance Memory Limited
- Christophe J. CHEVALLIER
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated Assemblies Comprising Ferroelectric Transistors and Non-...
- Publication number 20200395382
- Publication date Dec 17, 2020
- Micron Technology, Inc.
- Wayne I. Kinney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES, MEMORY CELLS AND DEVICES COMPRISING FERRO...
- Publication number 20200349994
- Publication date Nov 5, 2020
- Micron Technology, Inc.
- Albert Liao
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICES COMPRISING CRYSTALLINE MATERIALS AND RELATED SYSTEMS
- Publication number 20200303493
- Publication date Sep 24, 2020
- Micron Technology, Inc.
- Michael Mutch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20200259079
- Publication date Aug 13, 2020
- Hefei Reliance Memory Limited
- Darrell RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SELECTIVE READING OF MEMORY WITH IMPROVED ACCURACY
- Publication number 20200257584
- Publication date Aug 13, 2020
- Ovonyx Memory Technology, LLC
- Wayne Kinney
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Memory Arrays, Ferroelectric Transistors, and Methods of Reading an...
- Publication number 20200234751
- Publication date Jul 23, 2020
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC STRUCTURES, SEMICONDUCTOR STRUCTURES, AND SEMICONDUCTOR DE...
- Publication number 20200194497
- Publication date Jun 18, 2020
- Micron Technology, Inc.
- Wayne I. Kinney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cell And An Array Of Memory Cells
- Publication number 20200152645
- Publication date May 14, 2020
- Micron Technology, Inc.
- Durai Vishak Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC DEVICES WITH SEED AND MAGNETIC REGIONS AND METHODS OF FA...
- Publication number 20200119090
- Publication date Apr 16, 2020
- Micron Technology, Inc.
- Witold Kula
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR STRUCTURES
- Publication number 20200075713
- Publication date Mar 5, 2020
- Micron Technology, Inc.
- Michael Mutch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies Comprising Ferroelectric Transistors and Non-...
- Publication number 20200035704
- Publication date Jan 30, 2020
- Micron Technology, Inc.
- Wayne I. Kinney
- G11 - INFORMATION STORAGE
Information Patent Application
CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...
- Publication number 20190371396
- Publication date Dec 5, 2019
- UNITY SEMICONDUCTOR CORPORATION
- Lawrence Schloss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ELEMENT WITH A REACTIVE METAL LAYER
- Publication number 20190305047
- Publication date Oct 3, 2019
- Hefei Reliance Memory Limited
- Christophe J. CHEVALLIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENABLING FAST PULSE OPERATION
- Publication number 20190252015
- Publication date Aug 15, 2019
- Micron Technology, Inc.
- Gurtej S. Sandhu
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20190173006
- Publication date Jun 6, 2019
- Hefei Reliance Memory Limited
- Darrell RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
WRITING TO CROSS-POINT NON-VOLATILE MEMORY
- Publication number 20190139591
- Publication date May 9, 2019
- Micron Technology, Inc.
- Bei Wang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURES, MEMORY CELLS AND DEVICES COMPRISING FERRO...
- Publication number 20190096897
- Publication date Mar 28, 2019
- Micron Technology, Inc.
- Albert Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC STRUCTURES, SEMICONDUCTOR STRUCTURES, AND SEMICONDUCTOR DE...
- Publication number 20180366516
- Publication date Dec 20, 2018
- Micron Technology, Inc.
- Wayne I. Kinney
- H01 - BASIC ELECTRIC ELEMENTS

Wayne I. Kinney

Person

Patents Grantslast 30 patents

Ferroelectric devices and ferroelectric memory cells

Devices comprising crystalline materials

Electronic devices including a seed region and magnetic regions

Memory arrays, ferroelectric transistors, and methods of reading an...

Selective reading of memory with improved accuracy

Two-terminal reversibly switchable memory device

Transistors, memory cells and semiconductor constructions

Devices comprising crystalline materials and related systems

Integrated assemblies comprising ferroelectric transistors and non-...

Memory element with a reactive metal layer

Semiconductor structures, memory cells and devices comprising ferro...

Electronic devices with seed and magnetic regions and methods of fa...

Selective reading of memory with improved accuracy

Memory arrays, ferroelectric transistors, and methods of reading an...

Magnetic structures, semiconductor structures, and semiconductor de...

Two-terminal reversibly switchable memory device

Memory cell and an array of memory cells

Transistors, memory cells and semiconductor constructions comprisin...

Memory element with a reactive metal layer

Conductive metal oxide structures in non-volatile re-writable memor...

Memory element with a reactive metal layer

Integrated assemblies comprising ferroelectric transistors and non-...

Enabling fast pulse operation

Semiconductor structures, memory cells and devices comprising ferro...

Methods of forming semiconductor structures

Two-terminal reversibly switchable memory device

Memory arrays, ferroelectric transistors, and methods of reading an...

Magnetic structures, semiconductor structures, and semiconductor de...

Selective reading of memory with improved accuracy

Memory cell and an array of memory cells

Patents Applicationslast 30 patents

FERROELECTRIC DEVICES AND FERROELECTRIC MEMORY CELLS

DEVICES COMPRISING CRYSTALLINE MATERIALS

Memory Arrays, Ferroelectric Transistors, and Methods of Reading an...

DEVICES COMPRISING CRYSTALLINE MATERIALS

FERROELECTRIC DEVICES AND FERROELECTRIC MEMORY CELLS

SELECTIVE READING OF MEMORY WITH IMPROVED ACCURACY

ELECTRONIC DEVICES INCLUDING A SEED REGION AND MAGNETIC REGIONS

Memory Arrays, Ferroelectric Transistors, and Methods of Reading an...

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

Transistors, Memory Cells and Semiconductor Constructions

CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...

MEMORY ELEMENT WITH A REACTIVE METAL LAYER

Integrated Assemblies Comprising Ferroelectric Transistors and Non-...

SEMICONDUCTOR STRUCTURES, MEMORY CELLS AND DEVICES COMPRISING FERRO...

DEVICES COMPRISING CRYSTALLINE MATERIALS AND RELATED SYSTEMS

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

SELECTIVE READING OF MEMORY WITH IMPROVED ACCURACY

Memory Arrays, Ferroelectric Transistors, and Methods of Reading an...

MAGNETIC STRUCTURES, SEMICONDUCTOR STRUCTURES, AND SEMICONDUCTOR DE...

Memory Cell And An Array Of Memory Cells

ELECTRONIC DEVICES WITH SEED AND MAGNETIC REGIONS AND METHODS OF FA...

METHODS OF FORMING SEMICONDUCTOR STRUCTURES

Integrated Assemblies Comprising Ferroelectric Transistors and Non-...

CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMOR...

MEMORY ELEMENT WITH A REACTIVE METAL LAYER

ENABLING FAST PULSE OPERATION

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

WRITING TO CROSS-POINT NON-VOLATILE MEMORY

SEMICONDUCTOR STRUCTURES, MEMORY CELLS AND DEVICES COMPRISING FERRO...

MAGNETIC STRUCTURES, SEMICONDUCTOR STRUCTURES, AND SEMICONDUCTOR DE...