Wensheng Qian

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Method for making LDMOS device and LDMOS device
- Patent number 11,456,371
- Issue date Sep 27, 2022
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device and method for manufacturing same
- Patent number 11,264,497
- Issue date Mar 1, 2022
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device and its manufacturing method
- Patent number 9,997,605
- Issue date Jun 12, 2018
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NLDMOS device and method for manufacturing the same
- Patent number 9,997,626
- Issue date Jun 12, 2018
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Wenting Duan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation NLDMOS device and a manufacturing method therefor
- Patent number 9,484,455
- Issue date Nov 1, 2016
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Donghua Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device with step-like drift region and fabrication method the...
- Patent number 9,478,640
- Issue date Oct 25, 2016
- Shanghai Hua Hong NEC Electronics Co., Ltd.
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for picking up a collector and method of manufacturing th...
- Patent number 9,130,003
- Issue date Sep 8, 2015
- Shanghai Hua Hong NEC Electronics
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF LDMOS device and method of forming the same
- Patent number 9,117,900
- Issue date Aug 25, 2015
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF LDMOS device and fabrication method thereof
- Patent number 9,059,277
- Issue date Jun 16, 2015
- Shanghai Hua Hong NEC Electronics Co., Ltd.
- Juanjuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device with step-like drift region and fabrication method the...
- Patent number 9,029,948
- Issue date May 12, 2015
- Shanghai Hua Hong NEC Electronics Co., Ltd.
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiGe HBT and method of manufacturing the same
- Patent number 9,012,279
- Issue date Apr 21, 2015
- Shanghai Hua Hong NEC Electronics Co., Ltd.
- Donghua Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-germanium heterojunction bipolar transistor and manufacturi...
- Patent number 8,866,189
- Issue date Oct 21, 2014
- Shanghai Hua Hong NEC Electronics Co., Ltd.
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Zener diode in a SiGe BiCMOS process and method of fabricating the...
- Patent number 8,829,650
- Issue date Sep 9, 2014
- Shanghai Hua Hong NEC Electronics Co., Ltd.
- Donghua Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiGe HBT having deep pseudo buried layer and manufacturing method t...
- Patent number 8,816,400
- Issue date Aug 26, 2014
- Shanghai Hua Hong NEC Electronics Co., Ltd.
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for picking up a collector and manufacturing method thereof
- Patent number 8,803,279
- Issue date Aug 12, 2014
- Shanghai Hua Hong NEC Electronics Co., Ltd.
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High speed SiGe HBT and manufacturing method thereof
- Patent number 8,785,977
- Issue date Jul 22, 2014
- Shanghai Hua Hong NEC Electronics Co., Ltd.
- Donghua Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiGe HBT device and manufacturing method of the same
- Patent number 8,779,473
- Issue date Jul 15, 2014
- Shanghai Hua Hong NEC Electronics Co., Ltd.
- Donghua Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-high voltage SIGE HBT device and manufacturing method of the...
- Patent number 8,759,880
- Issue date Jun 24, 2014
- Shanghai Hua Hong NEC Electronics Co., Ltd.
- Jing Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra high voltage SiGe HBT and manufacturing method thereof
- Patent number 8,748,238
- Issue date Jun 10, 2014
- Shanghai Hua Hong NEC Electronics Co., Ltd.
- Donghua Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiGe HBT and manufacturing method thereof
- Patent number 8,742,538
- Issue date Jun 3, 2014
- Shanghai Hua Hong NEC Electronics Co., Ltd.
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing trench type superjunction device and trenc...
- Patent number 8,716,111
- Issue date May 6, 2014
- Shanghai Hua Hong Electronics Co., Ltd.
- Fei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage bipolar transistor with pseudo buried layers
- Patent number 8,674,480
- Issue date Mar 18, 2014
- Shanghai Hua Hong Nec Electronics Company, Limited
- Tzuyin Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical parasitic PNP device in a BiCMOS process and manufacturing...
- Patent number 8,637,959
- Issue date Jan 28, 2014
- Shanghai Hua Hong NEC Electronics
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic vertical PNP bipolar transistor and its fabrication metho...
- Patent number 8,598,678
- Issue date Dec 3, 2013
- Shanghai Hua Hong Nec Electronics Company, Limited
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pseudo buried layer and manufacturing method of the same, deep hole...
- Patent number 8,592,870
- Issue date Nov 26, 2013
- Shanghai Hua Hong NEC Electronics Co., Ltd.
- Donghua Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic PIN device in a BiCMOS process and manufacturing method o...
- Patent number 8,476,728
- Issue date Jul 2, 2013
- Shanghai Hua Hong NEC Electronics Co., Ltd.
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic PNP bipolar transistor in a silicon-germanium BiCMOS process
- Patent number 8,455,975
- Issue date Jun 4, 2013
- Shanghai Hua Hong NEC Electronics Co., Ltd.
- Donghua Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic vertical PNP bipolar transistor and its fabrication metho...
- Patent number 8,420,475
- Issue date Apr 16, 2013
- Shanghai Hua Hong Nec Electronics Company, Limited
- Tzuyin Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing approach for collector and a buried layer of bipolar...
- Patent number 8,420,495
- Issue date Apr 16, 2013
- Shanghai Hua Hong Nec Electronics Company, Limited
- Tzuyin Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic vertical PNP bipolar transistor in BiCMOS process
- Patent number 8,421,185
- Issue date Apr 16, 2013
- Shanghai Hua Hong Nec Electronics Company, Limited
- Tzuyin Chiu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Structure and Method for Forming the Same
- Publication number 20240030279
- Publication date Jan 25, 2024
- Hua Hong Semiconductor (Wuxi) Limited
- Zhengrong CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Image Sensor and Method for Forming the Same
- Publication number 20230275164
- Publication date Aug 31, 2023
- Hua Hong Semiconductor (Wuxi) Limited
- Jialong LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING DEEP TRENCH ISOLATION OF CIS DEVICE, AND SEMICOND...
- Publication number 20220230909
- Publication date Jul 21, 2022
- Hua Hong Semiconductor (Wuxi) Limited
- Jialong LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING LDMOS DEVICE AND LDMOS DEVICE
- Publication number 20210391448
- Publication date Dec 16, 2021
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Wensheng QIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20200235237
- Publication date Jul 23, 2020
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Wensheng QIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NLDMOS DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20160351704
- Publication date Dec 1, 2016
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Wenting Duan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION NLDMOS DEVICE AND A MANUFACTURING METHOD THEREFOR
- Publication number 20160233332
- Publication date Aug 11, 2016
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Donghua Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS Device and Its Manufacturing Method
- Publication number 20160181400
- Publication date Jun 23, 2016
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF LDMOS DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20140191317
- Publication date Jul 10, 2014
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Wensheng QIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF LDMOS DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20140159153
- Publication date Jun 12, 2014
- Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Wensheng QIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH SPEED SIGE HBT AND MANUFACTURING METHOD THEREOF
- Publication number 20140124838
- Publication date May 8, 2014
- SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Donghua Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS DEVICE WITH STEP-LIKE DRIFT REGION AND FABRICATION METHOD THE...
- Publication number 20140048879
- Publication date Feb 20, 2014
- SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF LDMOS DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20140042522
- Publication date Feb 13, 2014
- SHANGHAI HUA HONG NEC ELECTONICS CO, LTD.
- Juanjuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF LDMOS DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20140042538
- Publication date Feb 13, 2014
- SHANGHAI HUA HONG NED ELECTRONICS, CO., LTD.
- Juanjuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS DEVICE WITH STEP-LIKE DRIFT REGION AND FABRICATION METHOD THE...
- Publication number 20140027850
- Publication date Jan 30, 2014
- SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE FOR PICKING UP A COLLECTOR AND METHOD OF MANUFACTURING TH...
- Publication number 20130328047
- Publication date Dec 12, 2013
- SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-HIGH VOLTAGE SIGE HBT DEVICE AND MANUFACTURING METHOD OF THE...
- Publication number 20130328108
- Publication date Dec 12, 2013
- Jing Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE FOR PICKING UP A COLLECTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20130313677
- Publication date Nov 28, 2013
- SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIGE HBT DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20130299879
- Publication date Nov 14, 2013
- SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Donghua Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PREVENTING DOPANT FROM DIFFUSING INTO ATMOSPHERE IN A BIC...
- Publication number 20130196491
- Publication date Aug 1, 2013
- SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Donghua Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ZENER DIODE IN A SIGE BICMOS PROCESS AND METHOD OF FABRICATING THE...
- Publication number 20130175581
- Publication date Jul 11, 2013
- SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Donghua Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR AND MANUFACTURI...
- Publication number 20130140604
- Publication date Jun 6, 2013
- SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA HIGH VOLTAGE SIGE HBT AND MANUFACTURING METHOD THEREOF
- Publication number 20130126945
- Publication date May 23, 2013
- SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Donghua Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIGE HBT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20130113020
- Publication date May 9, 2013
- SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Donghua Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIGE HBT HAVING DEEP PSEUDO BURIED LAYER AND MANUFACTURING METHOD T...
- Publication number 20130113021
- Publication date May 9, 2013
- SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE FOR PICKING UP A BURIED LAYER AND METHOD THEREOF
- Publication number 20130113104
- Publication date May 9, 2013
- SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON-INSULATOR-SILICON CAPACITOR IN A SIGE HBT PROCESS AND M...
- Publication number 20130113078
- Publication date May 9, 2013
- SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Donghua Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIGE HBT AND MANUFACTURING METHOD THEREOF
- Publication number 20130113022
- Publication date May 9, 2013
- SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL PNP DEVICE IN A SILICON-GERMANIUM BICMOS PROCESS AND MANUF...
- Publication number 20130075730
- Publication date Mar 28, 2013
- SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD.
- Wensheng Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR
- Publication number 20120091509
- Publication date Apr 19, 2012
- Donghua Liu
- H01 - BASIC ELECTRIC ELEMENTS

Wensheng Qian

Person

Patents Grantslast 30 patents

Method for making LDMOS device and LDMOS device

LDMOS device and method for manufacturing same

LDMOS device and its manufacturing method

NLDMOS device and method for manufacturing the same

Isolation NLDMOS device and a manufacturing method therefor

LDMOS device with step-like drift region and fabrication method the...

Structure for picking up a collector and method of manufacturing th...

RF LDMOS device and method of forming the same

RF LDMOS device and fabrication method thereof

LDMOS device with step-like drift region and fabrication method the...

SiGe HBT and method of manufacturing the same

Silicon-germanium heterojunction bipolar transistor and manufacturi...

Zener diode in a SiGe BiCMOS process and method of fabricating the...

SiGe HBT having deep pseudo buried layer and manufacturing method t...

Structure for picking up a collector and manufacturing method thereof

High speed SiGe HBT and manufacturing method thereof

SiGe HBT device and manufacturing method of the same

Ultra-high voltage SIGE HBT device and manufacturing method of the...

Ultra high voltage SiGe HBT and manufacturing method thereof

SiGe HBT and manufacturing method thereof

Method for manufacturing trench type superjunction device and trenc...

High voltage bipolar transistor with pseudo buried layers

Vertical parasitic PNP device in a BiCMOS process and manufacturing...

Parasitic vertical PNP bipolar transistor and its fabrication metho...

Pseudo buried layer and manufacturing method of the same, deep hole...

Parasitic PIN device in a BiCMOS process and manufacturing method o...

Parasitic PNP bipolar transistor in a silicon-germanium BiCMOS process

Parasitic vertical PNP bipolar transistor and its fabrication metho...

Manufacturing approach for collector and a buried layer of bipolar...

Parasitic vertical PNP bipolar transistor in BiCMOS process

Patents Applicationslast 30 patents

Semiconductor Structure and Method for Forming the Same

Image Sensor and Method for Forming the Same

METHOD FOR MAKING DEEP TRENCH ISOLATION OF CIS DEVICE, AND SEMICOND...

METHOD FOR MAKING LDMOS DEVICE AND LDMOS DEVICE

LDMOS DEVICE AND METHOD FOR MANUFACTURING SAME

NLDMOS DEVICE AND METHOD FOR MANUFACTURING THE SAME

ISOLATION NLDMOS DEVICE AND A MANUFACTURING METHOD THEREFOR

LDMOS Device and Its Manufacturing Method

RF LDMOS DEVICE AND METHOD OF FORMING THE SAME

RF LDMOS DEVICE AND METHOD OF FORMING THE SAME

HIGH SPEED SIGE HBT AND MANUFACTURING METHOD THEREOF

LDMOS DEVICE WITH STEP-LIKE DRIFT REGION AND FABRICATION METHOD THE...

RF LDMOS DEVICE AND FABRICATION METHOD THEREOF

RF LDMOS DEVICE AND FABRICATION METHOD THEREOF

LDMOS DEVICE WITH STEP-LIKE DRIFT REGION AND FABRICATION METHOD THE...

STRUCTURE FOR PICKING UP A COLLECTOR AND METHOD OF MANUFACTURING TH...

ULTRA-HIGH VOLTAGE SIGE HBT DEVICE AND MANUFACTURING METHOD OF THE...

STRUCTURE FOR PICKING UP A COLLECTOR AND MANUFACTURING METHOD THEREOF

SIGE HBT DEVICE AND MANUFACTURING METHOD OF THE SAME

METHOD OF PREVENTING DOPANT FROM DIFFUSING INTO ATMOSPHERE IN A BIC...

ZENER DIODE IN A SIGE BICMOS PROCESS AND METHOD OF FABRICATING THE...

SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR AND MANUFACTURI...

ULTRA HIGH VOLTAGE SIGE HBT AND MANUFACTURING METHOD THEREOF

SIGE HBT AND METHOD OF MANUFACTURING THE SAME

SIGE HBT HAVING DEEP PSEUDO BURIED LAYER AND MANUFACTURING METHOD T...

STRUCTURE FOR PICKING UP A BURIED LAYER AND METHOD THEREOF

POLYSILICON-INSULATOR-SILICON CAPACITOR IN A SIGE HBT PROCESS AND M...

SIGE HBT AND MANUFACTURING METHOD THEREOF

VERTICAL PNP DEVICE IN A SILICON-GERMANIUM BICMOS PROCESS AND MANUF...

SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR