Yong Lu

Person

Rosemount, MN, US

People

Patents Grantslast 30 patents

Information Patent Grant
One-time programmable memory cell
- Patent number 9,136,217
- Issue date Sep 15, 2015
- Broadcom Corporation
- Jonathan Schmitt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar CMOS select device for resistive sense memory
- Patent number 9,030,867
- Issue date May 12, 2015
- Seagate Technology LLC
- Yong Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable diode array for high density OTP application
- Patent number 9,007,805
- Issue date Apr 14, 2015
- Broadcom Corporation
- Yong Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Bit set modes for a resistive sense memory cell array
- Patent number 8,934,281
- Issue date Jan 13, 2015
- Seagate Technology LLC
- Yiran Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory cell with multiple resistive sense elements sha...
- Patent number 8,861,244
- Issue date Oct 14, 2014
- Seagate Technology LLC
- Andrew John Carter
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of switching out-of-plane magnetic tunnel junction cells
- Patent number 8,792,264
- Issue date Jul 29, 2014
- Seagate Technology LLC
- Insik Jin
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory with separate read and write paths
- Patent number 8,681,541
- Issue date Mar 25, 2014
- Seagate Technology LLC
- Yong Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Bit line charge accumulation sensing for resistive changing memory
- Patent number 8,638,597
- Issue date Jan 28, 2014
- Seagate Technology LLC
- Chulmin Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Floating source line architecture for non-volatile memory
- Patent number 8,582,347
- Issue date Nov 12, 2013
- Seagate Technology LLC
- Chulmin Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Single line MRAM
- Patent number 8,519,495
- Issue date Aug 27, 2013
- Seagate Technology LLC
- Insik Jin
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory with separate read and write paths
- Patent number 8,520,432
- Issue date Aug 27, 2013
- Seagate Technology LLC
- Yong Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM diode array and access method
- Patent number 8,514,605
- Issue date Aug 20, 2013
- Seagate Technology LLC
- Yiran Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods of cell selection in three-dimensional cross-po...
- Patent number 8,514,637
- Issue date Aug 20, 2013
- Seagate Technology LLC
- Chulmin Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Polarity dependent switch for resistive sense memory
- Patent number 8,508,980
- Issue date Aug 13, 2013
- Seagate Technology LLC
- Chulmin Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of switching out-of-plane magnetic tunnel junction cells
- Patent number 8,508,973
- Issue date Aug 13, 2013
- Seagate Technology LLC
- Insik Jin
- G11 - INFORMATION STORAGE
Information Patent Grant
Three dimensionally stacked non volatile memory units
- Patent number 8,482,957
- Issue date Jul 9, 2013
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Bidirectional non-volatile memory array architecture
- Patent number 8,422,271
- Issue date Apr 16, 2013
- Seagate Technology LLC
- Andrew John Carter
- G11 - INFORMATION STORAGE
Information Patent Grant
Transmission gate-based spin-transfer torque memory unit
- Patent number 8,416,615
- Issue date Apr 9, 2013
- Seagate Technology LLC
- Yiran Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Floating source line architecture for non-volatile memory
- Patent number 8,363,449
- Issue date Jan 29, 2013
- Seagate Technology LLC
- Chulmin Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Hierarchical cross-point array of non-volatile memory
- Patent number 8,363,450
- Issue date Jan 29, 2013
- Seagate Technology LLC
- Chulmin Jung
- A01 - AGRICULTURE FORESTRY ANIMAL HUSBANDRY HUNTING TRAPPING FISHING
Information Patent Grant
Mirrored-gate cell for non-volatile memory
- Patent number 8,324,607
- Issue date Dec 4, 2012
- Seagate Technology LLC
- Roger Glenn Rolbiecki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric write current compensation
- Patent number 8,320,169
- Issue date Nov 27, 2012
- Seagate Technology LLC
- Wenzhong Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Data devices including multiple error correction codes and methods...
- Patent number 8,296,620
- Issue date Oct 23, 2012
- Seagate Technology LLC
- Yiran Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM diode array and access method
- Patent number 8,289,746
- Issue date Oct 16, 2012
- Seagate Technology LLC
- Yiran Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Asymmetric write current compensation using gate overdrive for resi...
- Patent number 8,289,752
- Issue date Oct 16, 2012
- Seagate Technology LLC
- Yong Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory cell with precessional switching
- Patent number 8,289,759
- Issue date Oct 16, 2012
- Seagate Technology LLC
- Xiaobin Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Data storage using read-mask-write operation
- Patent number 8,289,786
- Issue date Oct 16, 2012
- Seagate Technology LLC
- Henry F. Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory cell stack with dual resistive elements
- Patent number 8,248,836
- Issue date Aug 21, 2012
- Seagate Technology LLC
- Insik Jin
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory cell with resistive sense element block erase a...
- Patent number 8,213,259
- Issue date Jul 3, 2012
- Seagate Technology LLC
- Daniel S. Reed
- G11 - INFORMATION STORAGE
Information Patent Grant
Current cancellation for non-volatile memory
- Patent number 8,203,894
- Issue date Jun 19, 2012
- Seagate Technology LLC
- Chulmin Jung
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
PROGRAMMABLE DIODE ARRAY FOR HIGH DENSITY OTP APPLICATION
- Publication number 20150078062
- Publication date Mar 19, 2015
- BROADCOM CORPORATION
- Yong LU
- G11 - INFORMATION STORAGE
Information Patent Application
One-Time Programmable Memory Cell
- Publication number 20140071731
- Publication date Mar 13, 2014
- BROADCOM CORPORATION
- Jonathan Schmitt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY WITH SEPARATE READ AND WRITE PATHS
- Publication number 20140015075
- Publication date Jan 16, 2014
- Yong Lu
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF SWITCHING OUT-OF-PLANE MAGNETIC TUNNEL JUNCTION CELLS
- Publication number 20130329490
- Publication date Dec 12, 2013
- SEAGATE TECHNOLOGY LLC
- Insik Jin
- G11 - INFORMATION STORAGE
Information Patent Application
Floating Source Line Architecture for Non-Volatile Memory
- Publication number 20130135922
- Publication date May 30, 2013
- Seagate Technology LLC
- Chulmin Jung
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM DIODE ARRAY AND ACCESS METHOD
- Publication number 20130003448
- Publication date Jan 3, 2013
- Seagate Technology LLC
- Yiran Chen
- G11 - INFORMATION STORAGE
Information Patent Application
BIT LINE CHARGE ACCUMULATION SENSING FOR RESISTIVE CHANGING MEMORY
- Publication number 20120230094
- Publication date Sep 13, 2012
- Seagate Technology LLC
- Chulmin Jung
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSMISSION GATE-BASED SPIN-TRANSFER TORQUE MEMORY UNIT
- Publication number 20120230093
- Publication date Sep 13, 2012
- Seagate Technology LLC
- Yiran Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Bidirectional Non-Volatile Memory Array Architecture
- Publication number 20120147659
- Publication date Jun 14, 2012
- Seagate Technology LLC
- Andrew John Carter
- G11 - INFORMATION STORAGE
Information Patent Application
Asymmetric Write Current Compensation Using Gate Overdrive for Resi...
- Publication number 20120120713
- Publication date May 17, 2012
- Seagate Technology LLC
- Yong Lu
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF SWITCHING OUT-OF-PLANE MAGNETIC TUNNEL JUNCTION CELLS
- Publication number 20120120708
- Publication date May 17, 2012
- Seagate Technology LLC
- Insik Jin
- G11 - INFORMATION STORAGE
Information Patent Application
Asymmetric Write Current Compensation
- Publication number 20120087175
- Publication date Apr 12, 2012
- Seagate Technology LLC
- Wenzhong Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
Hierarchical Cross-Point Array of Non-Volatile Memory
- Publication number 20120039112
- Publication date Feb 16, 2012
- Seagate Technology LLC
- Chulmin Jung
- A01 - AGRICULTURE FORESTRY ANIMAL HUSBANDRY HUNTING TRAPPING FISHING
Information Patent Application
POLARITY DEPENDENT SWITCH FOR RESISTIVE SENSE MEMORY
- Publication number 20120039111
- Publication date Feb 16, 2012
- Seagate Technology LLC
- Chulmin Jung
- G11 - INFORMATION STORAGE
Information Patent Application
THREE DIMENSIONALLY STACKED NON VOLATILE MEMORY UNITS
- Publication number 20120039113
- Publication date Feb 16, 2012
- Seagate Technology LLC
- Xuguang Wang
- G11 - INFORMATION STORAGE
Information Patent Application
MIRRORED-GATE CELL FOR NON-VOLATILE MEMORY
- Publication number 20120037875
- Publication date Feb 16, 2012
- Seagate Technology LLC
- Roger Glenn Rolbiecki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bit Set Modes for a Resistive Sense Memory Cell Array
- Publication number 20120033482
- Publication date Feb 9, 2012
- Seagate Technology LLC
- Yiran Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Data Storage Using Read-Mask-Write Operation
- Publication number 20120008374
- Publication date Jan 12, 2012
- Seagate Technology LLC
- Henry F. Huang
- G11 - INFORMATION STORAGE
Information Patent Application
Floating Source Line Architecture for Non-Volatile Memory
- Publication number 20110299323
- Publication date Dec 8, 2011
- Seagate Technology LLC
- Chulmin Jung
- G11 - INFORMATION STORAGE
Information Patent Application
Asymmetric Write Current Compensation Using Gate Overdrive for Resi...
- Publication number 20110292716
- Publication date Dec 1, 2011
- Seagate Technology LLC
- Yong Lu
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSMISSION GATE-BASED SPIN-TRANSFER TORQUE MEMORY UNIT
- Publication number 20110228598
- Publication date Sep 22, 2011
- Seagate Technology LLC
- Yiran Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Spin-Torque Bit Cell With Unpinned Reference Layer and Unidirection...
- Publication number 20110205788
- Publication date Aug 25, 2011
- Seagate Technology LLC
- Daniel Seymour Reed
- G01 - MEASURING TESTING
Information Patent Application
Non-Volatile Memory Cell With Precessional Switching
- Publication number 20110194337
- Publication date Aug 11, 2011
- Seagate Technology LLC
- Xiaobin Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY ARRAY WITH READ REFERENCE VOLTAGE CELLS
- Publication number 20110194330
- Publication date Aug 11, 2011
- Seagate Technology LLC
- Hongyue Liu
- G11 - INFORMATION STORAGE
Information Patent Application
Current Cancellation for Non-Volatile Memory
- Publication number 20110182106
- Publication date Jul 28, 2011
- Seagate Technology LLC
- Chulmin Jung
- G11 - INFORMATION STORAGE
Information Patent Application
Non-Volatile Memory Cell with Multiple Resistive Sense Elements Sha...
- Publication number 20110149639
- Publication date Jun 23, 2011
- Seagate Technology LLC
- Andrew John Carter
- G11 - INFORMATION STORAGE
Information Patent Application
Asymmetric Write Current Compensation
- Publication number 20110134688
- Publication date Jun 9, 2011
- Seagate Technology LLC
- Wenzhong Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE WRITE AND READ METHODS FOR RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20110134682
- Publication date Jun 9, 2011
- Seagate Technology LLC
- Haiwen Xi
- G11 - INFORMATION STORAGE
Information Patent Application
Asymmetric Write Current Compensation Using Gate Overdrive for Resi...
- Publication number 20110116302
- Publication date May 19, 2011
- Seagate Technology LLC
- Yong Lu
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY WITH SEPARATE READ AND WRITE PATHS
- Publication number 20110089509
- Publication date Apr 21, 2011
- Seagate Technology LLC
- Yong Lu
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

One-time programmable memory cell

Bipolar CMOS select device for resistive sense memory

Programmable diode array for high density OTP application

Bit set modes for a resistive sense memory cell array

Non-volatile memory cell with multiple resistive sense elements sha...

Method of switching out-of-plane magnetic tunnel junction cells

Magnetic memory with separate read and write paths

Bit line charge accumulation sensing for resistive changing memory

Floating source line architecture for non-volatile memory

Single line MRAM

Magnetic memory with separate read and write paths

MRAM diode array and access method

Systems and methods of cell selection in three-dimensional cross-po...

Polarity dependent switch for resistive sense memory

Method of switching out-of-plane magnetic tunnel junction cells

Three dimensionally stacked non volatile memory units

Bidirectional non-volatile memory array architecture

Transmission gate-based spin-transfer torque memory unit

Floating source line architecture for non-volatile memory

Hierarchical cross-point array of non-volatile memory

Mirrored-gate cell for non-volatile memory

Asymmetric write current compensation

Data devices including multiple error correction codes and methods...

MRAM diode array and access method

Asymmetric write current compensation using gate overdrive for resi...

Non-volatile memory cell with precessional switching

Data storage using read-mask-write operation

Non-volatile memory cell stack with dual resistive elements

Non-volatile memory cell with resistive sense element block erase a...

Current cancellation for non-volatile memory

Patents Applicationslast 30 patents

PROGRAMMABLE DIODE ARRAY FOR HIGH DENSITY OTP APPLICATION

One-Time Programmable Memory Cell

MAGNETIC MEMORY WITH SEPARATE READ AND WRITE PATHS

METHOD OF SWITCHING OUT-OF-PLANE MAGNETIC TUNNEL JUNCTION CELLS

Floating Source Line Architecture for Non-Volatile Memory

MRAM DIODE ARRAY AND ACCESS METHOD

BIT LINE CHARGE ACCUMULATION SENSING FOR RESISTIVE CHANGING MEMORY

TRANSMISSION GATE-BASED SPIN-TRANSFER TORQUE MEMORY UNIT

Bidirectional Non-Volatile Memory Array Architecture

Asymmetric Write Current Compensation Using Gate Overdrive for Resi...

METHOD OF SWITCHING OUT-OF-PLANE MAGNETIC TUNNEL JUNCTION CELLS

Asymmetric Write Current Compensation

Hierarchical Cross-Point Array of Non-Volatile Memory

POLARITY DEPENDENT SWITCH FOR RESISTIVE SENSE MEMORY

THREE DIMENSIONALLY STACKED NON VOLATILE MEMORY UNITS

MIRRORED-GATE CELL FOR NON-VOLATILE MEMORY

Bit Set Modes for a Resistive Sense Memory Cell Array

Data Storage Using Read-Mask-Write Operation

Floating Source Line Architecture for Non-Volatile Memory

Asymmetric Write Current Compensation Using Gate Overdrive for Resi...

TRANSMISSION GATE-BASED SPIN-TRANSFER TORQUE MEMORY UNIT

Spin-Torque Bit Cell With Unpinned Reference Layer and Unidirection...

Non-Volatile Memory Cell With Precessional Switching

MEMORY ARRAY WITH READ REFERENCE VOLTAGE CELLS

Current Cancellation for Non-Volatile Memory

Non-Volatile Memory Cell with Multiple Resistive Sense Elements Sha...

Asymmetric Write Current Compensation

VARIABLE WRITE AND READ METHODS FOR RESISTIVE RANDOM ACCESS MEMORY

Asymmetric Write Current Compensation Using Gate Overdrive for Resi...

MAGNETIC MEMORY WITH SEPARATE READ AND WRITE PATHS