Yoshiaki Takeuchi

Person

Yokohama-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Nonvolatile semiconductor memory apparatus comprising charge accumu...
- Patent number 8,223,550
- Issue date Jul 17, 2012
- Kabushiki Kaisha Toshiba
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Chain ferroelectric random access memory (CFRAM) having an intrinsi...
- Patent number 7,295,456
- Issue date Nov 13, 2007
- Kabushiki Kaisha Toshiba
- Ryu Ogiwara
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit device and data write method thereof
- Patent number 7,203,121
- Issue date Apr 10, 2007
- Kabushiki Kaisha Toshiba
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device comprising transition detecting circuit and me...
- Patent number 7,127,598
- Issue date Oct 24, 2006
- Kabushiki Kaisha Toshiba
- Kohei Oikawa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Ferroelectric memory with an intrinsic access transistor coupled to...
- Patent number 7,057,917
- Issue date Jun 6, 2006
- Kabushiki Kaisha Toshiba
- Ryu Ogiwara
- G11 - INFORMATION STORAGE
Information Patent Grant
Asynchronous pseudo SRAM and access method therefor
- Patent number 7,002,871
- Issue date Feb 21, 2006
- Kabushiki Kaisha Toshiba
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory
- Patent number 6,906,944
- Issue date Jun 14, 2005
- Kabushiki Kaisha Toshiba
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit equipment with asynchronous operation
- Patent number 6,901,026
- Issue date May 31, 2005
- Kabushiki Kaisha Toshiba
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Asynchronous pseudo SRAM
- Patent number 6,891,775
- Issue date May 10, 2005
- Kabushiki Kaisha Toshiba
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric random access memory with isolation transistors coupl...
- Patent number 6,671,200
- Issue date Dec 30, 2003
- Kabushiki Kaisha Toshiba
- Ryu Ogiwara
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory having a device responsive to current lowering
- Patent number 6,643,162
- Issue date Nov 4, 2003
- Kabushiki Kaisha Toshiba
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit
- Patent number 6,590,829
- Issue date Jul 8, 2003
- Kabushiki Kaisha Toshiba
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Chain-type ferroelectric random access memory (FRAM) with rewrite t...
- Patent number 6,552,922
- Issue date Apr 22, 2003
- Kabushiki Kaisha Toshiba
- Ryu Ogiwara
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory device
- Patent number 6,483,737
- Issue date Nov 19, 2002
- Kabushiki Kaisha Toshiba
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Chain type ferroelectric memory with isolation transistors coupled...
- Patent number 6,473,330
- Issue date Oct 29, 2002
- Kabushiki Kaisha Toshiba
- Ryu Ogiwara
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device using ferroelectric film
- Patent number 6,366,490
- Issue date Apr 2, 2002
- Kabushiki Kaisha Toshiba
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 5,848,011
- Issue date Dec 8, 1998
- Kabushiki Kaisha Toshiba
- Kazuyoshi Muraoka
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 5,640,355
- Issue date Jun 17, 1997
- Kabushiki Kaisha Toshiba
- Kazuyoshi Muraoka
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having supply voltage deboosting circuit
- Patent number 5,627,493
- Issue date May 6, 1997
- Kabushiki Kaisha Toshiba
- Yoshiaki Takeuchi
- G05 - CONTROLLING REGULATING
Information Patent Grant
Sense amplifier having reduced coupling noise
- Patent number 5,168,462
- Issue date Dec 1, 1992
- Kabushiki Kaisha Toshiba
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit
- Patent number 4,856,034
- Issue date Aug 8, 1989
- Kabushiki Kaisha Toshiba
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS COMPRISING CHARGE ACCUMU...
- Publication number 20100271882
- Publication date Oct 28, 2010
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Application
Ferroelectric Memory and Semiconductor Memory
- Publication number 20080285327
- Publication date Nov 20, 2008
- KABUSHIKI KAISHA TOSHIBA
- Ryu Ogiwara
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT
- Publication number 20080001656
- Publication date Jan 3, 2008
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Application
Ferroelectric Memory and Semiconductor Memory
- Publication number 20060193162
- Publication date Aug 31, 2006
- KABUSHIKI KAISHA TOSHIBA
- Ryu Ogiwara
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor integrated circuit device and data write method thereof
- Publication number 20050232067
- Publication date Oct 20, 2005
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Application
ASYNCHRONOUS PSEUDO SRAM
- Publication number 20050068843
- Publication date Mar 31, 2005
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Application
Ferroelectric memory and semiconductor memory
- Publication number 20040136225
- Publication date Jul 15, 2004
- KABUSHIKI KAISHA TOSHIBA
- Ryu Ogiwara
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor device comprising transition detecting circuit and me...
- Publication number 20040123085
- Publication date Jun 24, 2004
- Kohei Oikawa
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Ferroelectric memory
- Publication number 20040062115
- Publication date Apr 1, 2004
- KABUSHIKI KAISHA TOSHIBA
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor integrated circuit equipment with asynchronous operation
- Publication number 20030156489
- Publication date Aug 21, 2003
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Application
Ferroelectric memory and semiconductor memory
- Publication number 20030128572
- Publication date Jul 10, 2003
- KABUSHIKI KAISHA TOSHIBA
- Ryu Ogiwara
- G11 - INFORMATION STORAGE
Information Patent Application
Ferroelectric memory and semiconductor memory
- Publication number 20020196656
- Publication date Dec 26, 2002
- KABUSHIKI KAISHA TOSHIBA
- Ryu Ogiwara
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor integrated circuit
- Publication number 20020126566
- Publication date Sep 12, 2002
- KABUSHIKI KAISHA TOSHIBA
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Application
Ferroelectric memory device
- Publication number 20020044477
- Publication date Apr 18, 2002
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE USING FERROELECTRIC FILM
- Publication number 20020024838
- Publication date Feb 28, 2002
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE
Information Patent Application
Ferroelectric memory
- Publication number 20010022741
- Publication date Sep 20, 2001
- Yoshiaki Takeuchi
- G11 - INFORMATION STORAGE

Yoshiaki Takeuchi

Person

Patents Grantslast 30 patents

Nonvolatile semiconductor memory apparatus comprising charge accumu...

Chain ferroelectric random access memory (CFRAM) having an intrinsi...

Semiconductor integrated circuit device and data write method thereof

Semiconductor device comprising transition detecting circuit and me...

Ferroelectric memory with an intrinsic access transistor coupled to...

Asynchronous pseudo SRAM and access method therefor

Ferroelectric memory

Semiconductor integrated circuit equipment with asynchronous operation

Asynchronous pseudo SRAM

Ferroelectric random access memory with isolation transistors coupl...

Ferroelectric memory having a device responsive to current lowering

Semiconductor integrated circuit

Chain-type ferroelectric random access memory (FRAM) with rewrite t...

Ferroelectric memory device

Chain type ferroelectric memory with isolation transistors coupled...

Semiconductor memory device using ferroelectric film

Semiconductor memory device

Semiconductor memory device

Semiconductor device having supply voltage deboosting circuit

Sense amplifier having reduced coupling noise

Semiconductor integrated circuit

Patents Applicationslast 30 patents

NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS COMPRISING CHARGE ACCUMU...

Ferroelectric Memory and Semiconductor Memory

SEMICONDUCTOR INTEGRATED CIRCUIT

Ferroelectric Memory and Semiconductor Memory

Semiconductor integrated circuit device and data write method thereof

ASYNCHRONOUS PSEUDO SRAM

Ferroelectric memory and semiconductor memory

Semiconductor device comprising transition detecting circuit and me...

Ferroelectric memory

Semiconductor integrated circuit equipment with asynchronous operation

Ferroelectric memory and semiconductor memory

Ferroelectric memory and semiconductor memory

Semiconductor integrated circuit

Ferroelectric memory device

SEMICONDUCTOR MEMORY DEVICE USING FERROELECTRIC FILM

Ferroelectric memory