Young Way Teh

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Spacer-less low-K dielectric processes
- Patent number 8,624,329
- Issue date Jan 7, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yong Meng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure having substantially planar N-P step h...
- Patent number 8,563,394
- Issue date Oct 22, 2013
- International Business Machines Corporation
- Weipeng Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Poly profile engineering to modulate spacer induced stress for devi...
- Patent number 8,519,445
- Issue date Aug 27, 2013
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Vincent Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Balancing NFET and PFET performance using straining layers
- Patent number 8,106,462
- Issue date Jan 31, 2012
- International Business Machines Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to remove spacer after salicidation to enhance contact etch...
- Patent number 7,999,325
- Issue date Aug 16, 2011
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Young Way Teh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Poly profile engineering to modulate spacer induced stress for devi...
- Patent number 7,993,997
- Issue date Aug 9, 2011
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Vincent Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for post silicide spacer removal
- Patent number 7,977,185
- Issue date Jul 12, 2011
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for transistor fabrication with optimized performance
- Patent number 7,883,953
- Issue date Feb 8, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit system for suppressing short channel effects
- Patent number 7,867,835
- Issue date Jan 11, 2011
- Chartered Semiconductor Manufacturing Ltd.
- Jae Gon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual stress memory technique method and related structure
- Patent number 7,785,950
- Issue date Aug 31, 2010
- International Business Machines Corporation
- Sunfei Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices using embedded L-shape spa...
- Patent number 7,759,206
- Issue date Jul 20, 2010
- International Business Machines Corporation
- Zhijiong Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer-less low-k dielectric processes
- Patent number 7,615,427
- Issue date Nov 10, 2009
- Chartered Semiconductor Manufacturing, Ltd.
- Yong Meng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improved fabrication of a semiconductor using a stress p...
- Patent number 7,531,401
- Issue date May 12, 2009
- International Business Machines Corporation
- Christopher Vincent Baiocco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to remove spacer after salicidation to enhance contact etch...
- Patent number 7,445,978
- Issue date Nov 4, 2008
- Chartered Semiconductor Manufacturing, Ltd.
- Young Way Teh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differential mechanical stress-producing regions for integrated cir...
- Patent number 7,307,320
- Issue date Dec 11, 2007
- Samsung Electronics Co., Ltd.
- Min-Chul Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating semiconductor devices having a dual stress l...
- Patent number 7,297,584
- Issue date Nov 20, 2007
- Samsung Electronics Co., Ltd.
- Jae-Eon Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite stress spacer
- Patent number 7,256,084
- Issue date Aug 14, 2007
- Chartered Semiconductor Manufacturing Ltd.
- Khee Yong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper metal structure for the reduction of intra-metal capacitance
- Patent number 6,815,823
- Issue date Nov 9, 2004
- Chartered Semiconductor Manufacturing Ltd.
- Young-Way Teh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper metal structure for the reduction of intra-metal capacitance
- Patent number 6,649,517
- Issue date Nov 18, 2003
- Chartered Semiconductor Manufacturing Ltd.
- Young-Way Teh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating an air gap shallow trench isolation (STI) st...
- Patent number 6,406,975
- Issue date Jun 18, 2002
- Chartered Semiconductor Manufacturing Inc.
- Victor Seng Keong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating an air gap metallization scheme that reduces...
- Patent number 6,380,106
- Issue date Apr 30, 2002
- Chartered Semiconductor Manufacturing Inc.
- Seng Keong Victor Lim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FLASH MEMORY DEVICES WITH THICKENED SOURCE/DRAIN SILICIDE
- Publication number 20230402516
- Publication date Dec 14, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Young Way Teh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER AND PROCESS TO ENHANCE THE STRAIN IN THE CHANNEL WITH STRESS...
- Publication number 20130256766
- Publication date Oct 3, 2013
- International Business Machines Corporation
- Atul C. AJMERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE HAVING SUBSTANTIALLY PLANAR N-P STEP H...
- Publication number 20120256268
- Publication date Oct 11, 2012
- GLOBALFOUNDRIES, Inc.
- Weipeng Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLY PROFILE ENGINEERING TO MODULATE SPACER INDUCED STRESS FOR DEVI...
- Publication number 20110266628
- Publication date Nov 3, 2011
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vincent HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Transistor Fabrication with Optimized Performance
- Publication number 20100078687
- Publication date Apr 1, 2010
- Da Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spacer-less Low-K Dielectric Processes
- Publication number 20100059831
- Publication date Mar 11, 2010
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Yong Meng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Implantation for shallow trench isolation (STI) formation and for s...
- Publication number 20090315115
- Publication date Dec 24, 2009
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Beichao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SYSTEM FOR SUPPRESSING SHORT CHANNEL EFFECTS
- Publication number 20090218636
- Publication date Sep 3, 2009
- Chartered Semiconductor Manufacturing LTD.
- Jae Gon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLY PROFILE ENGINEERING TO MODULATE SPACER INDUCED STRESS FOR DEVI...
- Publication number 20090085122
- Publication date Apr 2, 2009
- Vincent Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO REMOVE SPACER AFTER SALICIDATION TO ENHANCE CONTACT ETCH...
- Publication number 20090026549
- Publication date Jan 29, 2009
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Young Way Teh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SYSTEM HAVING COMPLEMENTARY STRAINED CHANNELS
- Publication number 20080315317
- Publication date Dec 25, 2008
- Chartered Semiconductor Manufacturing LTD.
- Chung Woh Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR IMPROVED FABRICATION OF A SEMICONDUCTOR USING A STRESS P...
- Publication number 20080191284
- Publication date Aug 14, 2008
- International Business Machines Corporation
- Christopher Vincent Baiocco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SYSTEM HAVING STRAINED TRANSISTOR
- Publication number 20080142897
- Publication date Jun 19, 2008
- Chartered Semiconductor Manufacturing LTD.
- Young Way Teh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SYSTEM HAVING STRAINED TRANSISTOR
- Publication number 20080044967
- Publication date Feb 21, 2008
- Chartered Semiconductor Manufacturing LTD.
- Young Way Teh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Dual Stress Liner and Light Exposure...
- Publication number 20080029823
- Publication date Feb 7, 2008
- SAMSUNG ELECTRONICS CO., LTD.
- Jae-Eon Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spacer-less low-k dielectric processes
- Publication number 20070281410
- Publication date Dec 6, 2007
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Yong Meng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR POST SILICIDE SPACER REMOVAL
- Publication number 20070161244
- Publication date Jul 12, 2007
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR DEVICES USING EMBEDDED L-SHAPE SPA...
- Publication number 20070122988
- Publication date May 31, 2007
- International Business Machines Corporation
- Zhijiong Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL STRESS MEMORY TECHNIQUE METHOD AND RELATED STRUCTURE
- Publication number 20070105299
- Publication date May 10, 2007
- International Business Machines Corporation
- Sunfei Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Differential mechanical stress-producing regions for integrated cir...
- Publication number 20070102779
- Publication date May 10, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Min-Chul Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a dual stress liner, method of manufact...
- Publication number 20070082439
- Publication date Apr 12, 2007
- SAMSUNG ELECTRONICS CO., LTD.
- Jae-Eon Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite stress spacer
- Publication number 20060252194
- Publication date Nov 9, 2006
- Chartered Semiconductor Manufacturing Ltd.
- Khee Yong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to remove spacer after salicidation to enhance contact etch...
- Publication number 20060249794
- Publication date Nov 9, 2006
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Young Way Teh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel copper metal structure for the reduction of intra-metal capac...
- Publication number 20040065956
- Publication date Apr 8, 2004
- Chartered Semiconductor Manufacturing Ltd.
- Young-Way Teh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel copper metal structure for the reduction of intra-metal capac...
- Publication number 20020175414
- Publication date Nov 28, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Young-Way Teh
- H01 - BASIC ELECTRIC ELEMENTS

Young Way Teh

Person

Patents Grantslast 30 patents

Spacer-less low-K dielectric processes

Integrated circuit structure having substantially planar N-P step h...

Poly profile engineering to modulate spacer induced stress for devi...

Balancing NFET and PFET performance using straining layers

Method to remove spacer after salicidation to enhance contact etch...

Poly profile engineering to modulate spacer induced stress for devi...

Method and apparatus for post silicide spacer removal

Method for transistor fabrication with optimized performance

Integrated circuit system for suppressing short channel effects

Dual stress memory technique method and related structure

Methods of forming semiconductor devices using embedded L-shape spa...

Spacer-less low-k dielectric processes

Method for improved fabrication of a semiconductor using a stress p...

Method to remove spacer after salicidation to enhance contact etch...

Differential mechanical stress-producing regions for integrated cir...

Methods of fabricating semiconductor devices having a dual stress l...

Composite stress spacer

Copper metal structure for the reduction of intra-metal capacitance

Copper metal structure for the reduction of intra-metal capacitance

Method for fabricating an air gap shallow trench isolation (STI) st...

Method for fabricating an air gap metallization scheme that reduces...

Patents Applicationslast 30 patents

FLASH MEMORY DEVICES WITH THICKENED SOURCE/DRAIN SILICIDE

SPACER AND PROCESS TO ENHANCE THE STRAIN IN THE CHANNEL WITH STRESS...

INTEGRATED CIRCUIT STRUCTURE HAVING SUBSTANTIALLY PLANAR N-P STEP H...

POLY PROFILE ENGINEERING TO MODULATE SPACER INDUCED STRESS FOR DEVI...

Method for Transistor Fabrication with Optimized Performance

Spacer-less Low-K Dielectric Processes

Implantation for shallow trench isolation (STI) formation and for s...

INTEGRATED CIRCUIT SYSTEM FOR SUPPRESSING SHORT CHANNEL EFFECTS

POLY PROFILE ENGINEERING TO MODULATE SPACER INDUCED STRESS FOR DEVI...

METHOD TO REMOVE SPACER AFTER SALICIDATION TO ENHANCE CONTACT ETCH...

SEMICONDUCTOR SYSTEM HAVING COMPLEMENTARY STRAINED CHANNELS

METHOD FOR IMPROVED FABRICATION OF A SEMICONDUCTOR USING A STRESS P...

INTEGRATED CIRCUIT SYSTEM HAVING STRAINED TRANSISTOR

INTEGRATED CIRCUIT SYSTEM HAVING STRAINED TRANSISTOR

Semiconductor Device Having a Dual Stress Liner and Light Exposure...

Spacer-less low-k dielectric processes

METHOD AND APPARATUS FOR POST SILICIDE SPACER REMOVAL

METHODS OF FORMING SEMICONDUCTOR DEVICES USING EMBEDDED L-SHAPE SPA...

DUAL STRESS MEMORY TECHNIQUE METHOD AND RELATED STRUCTURE

Differential mechanical stress-producing regions for integrated cir...

Semiconductor device having a dual stress liner, method of manufact...

Composite stress spacer

Method to remove spacer after salicidation to enhance contact etch...

Novel copper metal structure for the reduction of intra-metal capac...

Novel copper metal structure for the reduction of intra-metal capac...