Youseok Suh

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate fringing effect based channel formation for semiconductor device
- Patent number 11,950,412
- Issue date Apr 2, 2024
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate fringing effect based channel formation for semiconductor device
- Patent number 11,251,189
- Issue date Feb 15, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND memory cell string having a stacked select gate structure and...
- Patent number 11,069,699
- Issue date Jul 20, 2021
- Cypress Semiconductor Corporation
- Ming Sang Kwan
- G11 - INFORMATION STORAGE
Information Patent Grant
NAND memory cell string having a stacked select gate structure and...
- Patent number 10,756,101
- Issue date Aug 25, 2020
- Cypress Semiconductor Corporation
- Ming Sang Kwan
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method for manufacturing self-aligned STI with single poly
- Patent number 10,622,370
- Issue date Apr 14, 2020
- MONTEREY RESEARCH, LLC
- Tim Thurgate
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND memory cell string having a stacked select gate structure and...
- Patent number 10,566,341
- Issue date Feb 18, 2020
- Cypress Semiconductor Corporation
- Ming Sang Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND memory cell string having a stacked select gate structure and...
- Patent number 10,361,215
- Issue date Jul 23, 2019
- Cypress Semiconductor Corporation
- Ming Sang Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate fringing effect based channel formation for semiconductor device
- Patent number 10,297,606
- Issue date May 21, 2019
- Cypress Semiconductor Corporation
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND memory cell string having a stacked select gate structure and...
- Patent number 10,038,004
- Issue date Jul 31, 2018
- Cypress Semiconductor Corporation
- Ming Sang Kwan
- G11 - INFORMATION STORAGE
Information Patent Grant
Gate fringing effect based channel formation for semiconductor device
- Patent number 9,570,458
- Issue date Feb 14, 2017
- Cypress Semiconductor Corporation
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial local self boosting for NAND
- Patent number 9,514,824
- Issue date Dec 6, 2016
- Cypress Semiconductor Corporation
- Ya-Fen Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Modified local segmented self-boosting of memory cell channels
- Patent number 9,449,690
- Issue date Sep 20, 2016
- Cypress Semiconductor Corporation
- Swaroop Kaza
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method for manufacturing self-aligned STI with single poly
- Patent number 9,276,007
- Issue date Mar 1, 2016
- Cypress Semiconductor Corporation
- Tim Thurgate
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory cell with flair gate
- Patent number 9,190,531
- Issue date Nov 17, 2015
- Cypress Semiconductor Corporation
- Meng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell system with multiple nitride layers
- Patent number 8,809,936
- Issue date Aug 19, 2014
- GLOBALFOUNDRIES Inc.
- Lei Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate fringing effect based channel formation for semiconductor device
- Patent number 8,692,310
- Issue date Apr 8, 2014
- Spansion LLC
- YouSeok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned STI with single poly for manufacturing a flash memory...
- Patent number 8,642,441
- Issue date Feb 4, 2014
- Spansion LLC
- Tim Thurgate
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial local self boosting for NAND
- Patent number 8,638,609
- Issue date Jan 28, 2014
- Spansion LLC
- Ya-Fen Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory cell with a flair gate
- Patent number 8,367,537
- Issue date Feb 5, 2013
- Spansion LLC
- Meng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for extended nitride layer in a flash memory
- Patent number 8,208,296
- Issue date Jun 26, 2012
- Spansion LLC
- Timothy Thurgate
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell system with charge trap
- Patent number 8,143,661
- Issue date Mar 27, 2012
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory system with protection layer to cover the memory gate stack...
- Patent number 8,119,477
- Issue date Feb 21, 2012
- Spansion LLC
- Hidehiko Shiraiwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3-D integrated circuit system and method
- Patent number 7,998,846
- Issue date Aug 16, 2011
- Spansion LLC
- Eunha Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned patterning method by using non-conformal film and etch...
- Patent number 7,943,980
- Issue date May 17, 2011
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned patterning method by using non-conformal film and etch...
- Patent number 7,906,395
- Issue date Mar 15, 2011
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scaled down select gates of NAND flash memory cell strings and meth...
- Patent number 7,907,448
- Issue date Mar 15, 2011
- Spansion LLC
- YouSeok Suh
- G11 - INFORMATION STORAGE
Information Patent Grant
Partial local self-boosting of a memory cell channel
- Patent number 7,848,146
- Issue date Dec 7, 2010
- Spansion LLC
- Youseok Suh
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with barrier layer
- Patent number 7,816,724
- Issue date Oct 19, 2010
- Spansion LLC
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned patterning method by using non-conformal film and etch...
- Patent number 7,803,680
- Issue date Sep 28, 2010
- Spansion LLC
- Shenging Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit memory system employing silicon rich layers
- Patent number 7,675,104
- Issue date Mar 9, 2010
- Spansion LLC
- Amol Ramesh Joshi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE
- Publication number 20220173116
- Publication date Jun 2, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...
- Publication number 20210082927
- Publication date Mar 18, 2021
- CYPRESS SEMICONDUCTOR CORPORATION
- Ming Sang Kwan
- G11 - INFORMATION STORAGE
Information Patent Application
NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...
- Publication number 20200168618
- Publication date May 28, 2020
- CYPRESS SEMICONDUCTOR CORPORATION
- Ming Sang Kwan
- G11 - INFORMATION STORAGE
Information Patent Application
NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...
- Publication number 20190326303
- Publication date Oct 24, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Ming Sang Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE
- Publication number 20190319035
- Publication date Oct 17, 2019
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...
- Publication number 20180366473
- Publication date Dec 20, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Ming Sang Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE
- Publication number 20170170187
- Publication date Jun 15, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...
- Publication number 20170018555
- Publication date Jan 19, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Ming Sang Kwan
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEM AND METHOD FOR MANUFACTURING SELF-ALIGNED STI WITH SINGLE POLY
- Publication number 20140312409
- Publication date Oct 23, 2014
- SPANSION LLC
- Tim Thurgate
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFIED LOCAL SEGMENTED SELF-BOOSTING OF MEMORY CELL CHANNELS
- Publication number 20140301146
- Publication date Oct 9, 2014
- SPANSION LLC
- Swaroop KAZA
- G11 - INFORMATION STORAGE
Information Patent Application
GATE FRINGINE EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE
- Publication number 20140159138
- Publication date Jun 12, 2014
- SPANSION LLC
- YouSeok SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL LOCAL SELF BOOSTING FOR NAND
- Publication number 20140104957
- Publication date Apr 17, 2014
- SPANSION LLC
- Ya-Fen LIN
- G11 - INFORMATION STORAGE
Information Patent Application
FLASH MEMORY CELL WITH FLAIR GATE
- Publication number 20130105878
- Publication date May 2, 2013
- SPANSION LLC
- Meng DING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL LOCAL SELF BOOSTING FOR NAND
- Publication number 20110286276
- Publication date Nov 24, 2011
- Ya-Fen LIN
- G11 - INFORMATION STORAGE
Information Patent Application
3D INTEGRATED CIRCUIT SYSTEM AND METHOD
- Publication number 20110272775
- Publication date Nov 10, 2011
- Eunha KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD FOR EXTENDED NITRIDE LAYER IN A FLASH MEMORY
- Publication number 20110199819
- Publication date Aug 18, 2011
- SPANSION LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PATTERNING METHOD BY USING NON-CONFORMAL FILM AND ETCH...
- Publication number 20110013449
- Publication date Jan 20, 2011
- Shenqing FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PATTERNING METHOD BY USING NON-CONFORMAL FILM AND ETCH...
- Publication number 20110012191
- Publication date Jan 20, 2011
- Shenqing FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...
- Publication number 20100322006
- Publication date Dec 23, 2010
- Ming Sang Kwan
- G11 - INFORMATION STORAGE
Information Patent Application
PARTIAL LOCAL SELF-BOOSTING OF A MEMORY CELL CHANNEL
- Publication number 20100238731
- Publication date Sep 23, 2010
- Youseok Suh
- G11 - INFORMATION STORAGE
Information Patent Application
GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE
- Publication number 20100200904
- Publication date Aug 12, 2010
- YouSeok SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALED DOWN SELECT GATES OF NAND FLASH MEMORY CELL STRINGS AND METH...
- Publication number 20100085811
- Publication date Apr 8, 2010
- YouSeok SUH
- G11 - INFORMATION STORAGE
Information Patent Application
3-D INTEGRATED CIRCUIT SYSTEM AND METHOD
- Publication number 20100065940
- Publication date Mar 18, 2010
- Eunha KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF SILICON-RICH NITRIDE IN A FLASH MEMORY DEVICE
- Publication number 20090261406
- Publication date Oct 22, 2009
- Youseok SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Flash memory cell with a flair gate
- Publication number 20080277712
- Publication date Nov 13, 2008
- SPANSION LLC
- Meng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Device with Barrier Layer
- Publication number 20080191269
- Publication date Aug 14, 2008
- SPANSION LLC
- Youseok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned patterning method by using non-conformal film and etch...
- Publication number 20080171416
- Publication date Jul 17, 2008
- Shenging Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY SYSTEM WITH DEPLETION GATE
- Publication number 20080150005
- Publication date Jun 26, 2008
- SPANSION LLC
- Meng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY SYSTEM WITH SELECT GATE ERASE
- Publication number 20080150000
- Publication date Jun 26, 2008
- SPANSION LLC
- YouSeok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY SYSTEM WITH POLY METAL GATE
- Publication number 20080149990
- Publication date Jun 26, 2008
- SPANSION LLC
- Connie Pin Chin Wang
- H01 - BASIC ELECTRIC ELEMENTS

Youseok Suh

Person

Patents Grantslast 30 patents

Gate fringing effect based channel formation for semiconductor device

Gate fringing effect based channel formation for semiconductor device

NAND memory cell string having a stacked select gate structure and...

NAND memory cell string having a stacked select gate structure and...

System and method for manufacturing self-aligned STI with single poly

NAND memory cell string having a stacked select gate structure and...

NAND memory cell string having a stacked select gate structure and...

Gate fringing effect based channel formation for semiconductor device

NAND memory cell string having a stacked select gate structure and...

Gate fringing effect based channel formation for semiconductor device

Partial local self boosting for NAND

Modified local segmented self-boosting of memory cell channels

System and method for manufacturing self-aligned STI with single poly

Flash memory cell with flair gate

Memory cell system with multiple nitride layers

Gate fringing effect based channel formation for semiconductor device

Self-aligned STI with single poly for manufacturing a flash memory...

Partial local self boosting for NAND

Flash memory cell with a flair gate

Apparatus and method for extended nitride layer in a flash memory

Memory cell system with charge trap

Memory system with protection layer to cover the memory gate stack...

3-D integrated circuit system and method

Self-aligned patterning method by using non-conformal film and etch...

Self-aligned patterning method by using non-conformal film and etch...

Scaled down select gates of NAND flash memory cell strings and meth...

Partial local self-boosting of a memory cell channel

Memory device with barrier layer

Self-aligned patterning method by using non-conformal film and etch...

Integrated circuit memory system employing silicon rich layers

Patents Applicationslast 30 patents

GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE

NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...

NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...

NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...

GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE

NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...

GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE

NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...

SYSTEM AND METHOD FOR MANUFACTURING SELF-ALIGNED STI WITH SINGLE POLY

MODIFIED LOCAL SEGMENTED SELF-BOOSTING OF MEMORY CELL CHANNELS

GATE FRINGINE EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE

PARTIAL LOCAL SELF BOOSTING FOR NAND

FLASH MEMORY CELL WITH FLAIR GATE

PARTIAL LOCAL SELF BOOSTING FOR NAND

3D INTEGRATED CIRCUIT SYSTEM AND METHOD

APPARATUS AND METHOD FOR EXTENDED NITRIDE LAYER IN A FLASH MEMORY

SELF-ALIGNED PATTERNING METHOD BY USING NON-CONFORMAL FILM AND ETCH...

SELF-ALIGNED PATTERNING METHOD BY USING NON-CONFORMAL FILM AND ETCH...

NAND MEMORY CELL STRING HAVING A STACKED SELECT GATE STRUCTURE AND...

PARTIAL LOCAL SELF-BOOSTING OF A MEMORY CELL CHANNEL

GATE FRINGING EFFECT BASED CHANNEL FORMATION FOR SEMICONDUCTOR DEVICE

SCALED DOWN SELECT GATES OF NAND FLASH MEMORY CELL STRINGS AND METH...

3-D INTEGRATED CIRCUIT SYSTEM AND METHOD

USE OF SILICON-RICH NITRIDE IN A FLASH MEMORY DEVICE

Flash memory cell with a flair gate

Memory Device with Barrier Layer

Self-aligned patterning method by using non-conformal film and etch...

MEMORY SYSTEM WITH DEPLETION GATE

MEMORY SYSTEM WITH SELECT GATE ERASE

MEMORY SYSTEM WITH POLY METAL GATE