Yuan-Chen Sun

Person

Hsin-Chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method of dopant deactivation underneath gate
- Patent number 12,068,374
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Dhanyakumar Mahaveer Sathaiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local epitaxy nanofilms for nanowire stack GAA device
- Patent number 11,855,141
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ling-Yen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors having transition metal dichalcogenide cha...
- Patent number 11,410,996
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors having transition metal dichalcogenide cha...
- Patent number 11,164,864
- Issue date Nov 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal source and drain contacts for multi-gate field effect tra...
- Patent number 11,063,128
- Issue date Jul 13, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local epitaxy nanofilms for nanowire stack GAA device
- Patent number 11,043,556
- Issue date Jun 22, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ling-Yen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with selective dopant deactivation underneath gate
- Patent number 10,985,246
- Issue date Apr 20, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Dhanyakumar Mahaveer Sathaiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors having transition metal dichalcogenide cha...
- Patent number 10,269,791
- Issue date Apr 23, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal source and drain contacts for multi-gate field effect tra...
- Patent number 10,164,033
- Issue date Dec 25, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with selective dopant deactivation underneath gate
- Patent number 10,157,985
- Issue date Dec 18, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Dhanyakumar Mahaveer Sathaiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal source and drain contacts for multi-gate field effect tra...
- Patent number 9,614,086
- Issue date Apr 4, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with selective dopant deactivation underneath gate
- Patent number 9,153,662
- Issue date Oct 6, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dhanyakumar Mahaveer Sathaiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for bonding 3D semiconductor device
- Patent number 9,123,553
- Issue date Sep 1, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Shi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for bonding 3D semiconductor devices
- Patent number 8,048,717
- Issue date Nov 1, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Shi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS devices with source/drain regions having stressed regions and n...
- Patent number 7,612,364
- Issue date Nov 3, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce a reverse narrow channel effect for MOSFET devices
- Patent number 6,245,639
- Issue date Jun 12, 2001
- Taiwan Semiconductor Manufacturing Company
- ChaoChieh Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING DOPANT DEACTIVATION UNDERNEATH GATE
- Publication number 20240371940
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dhanyakumar Mahaveer SATHAIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Transistors Having Transition Metal Dichalcogenide Cha...
- Publication number 20220344330
- Publication date Oct 27, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF DOPANT DEACTIVATION UNDERNEATH GATE
- Publication number 20210234003
- Publication date Jul 29, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dhanyakumar Mahaveer SATHAIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Local Epitaxy Nanofilms for Nanowire Stack GAA Device
- Publication number 20210226005
- Publication date Jul 22, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ling-Yen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Transistors Having Transition Metal Dichalcogenide Cha...
- Publication number 20200006337
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL EPITAXY NANOFILMS FOR NANOWIRE STACK GAA DEVICE
- Publication number 20190393305
- Publication date Dec 26, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ling-Yen Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH SELECTIVE DOPANT DEACTIVATION UNDERNEATH GATE
- Publication number 20190165104
- Publication date May 30, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dhanyakumar Mahaveer SATHAIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conformal Source and Drain Contacts for Multi-Gate Field Effect Tra...
- Publication number 20190123157
- Publication date Apr 25, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Transistors Having Transition Metal Dichalcogenide Cha...
- Publication number 20180350806
- Publication date Dec 6, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conformal Source and Drain Contacts for Multi-Gate Field Effect Tra...
- Publication number 20170194442
- Publication date Jul 6, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Transistors Having Transition Metal Dichalcogenide Cha...
- Publication number 20160276343
- Publication date Sep 22, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH SELECTIVE DOPANT DEACTIVATION UNDERNEATH GATE
- Publication number 20160005817
- Publication date Jan 7, 2016
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY , LTD.
- Dhanyakumar Mahaveer SATHAIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH SLECTIVE DOPANT DEACTIVATION UNDERNEATH GATE
- Publication number 20130256796
- Publication date Oct 3, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dhanyakumar Mahaveer SATHAIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and System for Bonding 3D Semiconductor Device
- Publication number 20120028441
- Publication date Feb 2, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Shi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for bonding 3D semiconductor devices
- Publication number 20080268573
- Publication date Oct 30, 2008
- Chung-Shi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation process of interconnect structures with air-gaps and side...
- Publication number 20080185722
- Publication date Aug 7, 2008
- Chung-Shi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and methods for forming SiGe stressors
- Publication number 20080054250
- Publication date Mar 6, 2008
- Harry Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for controlling thickness uniformity of SiGe regions
- Publication number 20080042123
- Publication date Feb 21, 2008
- Kong-Beng Thei
- H01 - BASIC ELECTRIC ELEMENTS

Yuan-Chen Sun

Person

Patents Grantslast 30 patents

Method of dopant deactivation underneath gate

Local epitaxy nanofilms for nanowire stack GAA device

Field-effect transistors having transition metal dichalcogenide cha...

Field-effect transistors having transition metal dichalcogenide cha...

Conformal source and drain contacts for multi-gate field effect tra...

Local epitaxy nanofilms for nanowire stack GAA device

MOSFET with selective dopant deactivation underneath gate

Field-effect transistors having transition metal dichalcogenide cha...

Conformal source and drain contacts for multi-gate field effect tra...

MOSFET with selective dopant deactivation underneath gate

Conformal source and drain contacts for multi-gate field effect tra...

MOSFET with selective dopant deactivation underneath gate

Method and system for bonding 3D semiconductor device

Method and system for bonding 3D semiconductor devices

MOS devices with source/drain regions having stressed regions and n...

Method to reduce a reverse narrow channel effect for MOSFET devices

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING DOPANT DEACTIVATION UNDERNEATH GATE

Field-Effect Transistors Having Transition Metal Dichalcogenide Cha...

METHOD OF DOPANT DEACTIVATION UNDERNEATH GATE

Local Epitaxy Nanofilms for Nanowire Stack GAA Device

Field-Effect Transistors Having Transition Metal Dichalcogenide Cha...

LOCAL EPITAXY NANOFILMS FOR NANOWIRE STACK GAA DEVICE

MOSFET WITH SELECTIVE DOPANT DEACTIVATION UNDERNEATH GATE

Conformal Source and Drain Contacts for Multi-Gate Field Effect Tra...

Field-Effect Transistors Having Transition Metal Dichalcogenide Cha...

Conformal Source and Drain Contacts for Multi-Gate Field Effect Tra...

Field-Effect Transistors Having Transition Metal Dichalcogenide Cha...

MOSFET WITH SELECTIVE DOPANT DEACTIVATION UNDERNEATH GATE

MOSFET WITH SLECTIVE DOPANT DEACTIVATION UNDERNEATH GATE

Method and System for Bonding 3D Semiconductor Device

Method and system for bonding 3D semiconductor devices

Formation process of interconnect structures with air-gaps and side...

Structure and methods for forming SiGe stressors

Methods for controlling thickness uniformity of SiGe regions