Zhiyuan Cheng

Person

Lincoln, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Photovoltaics on silicon
- Patent number 10,680,126
- Issue date Jun 9, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jizhong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InP-based transistor fabrication
- Patent number 9,780,190
- Issue date Oct 3, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peide Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of edge effects from aspect ratio trapping
- Patent number 9,640,395
- Issue date May 2, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum tunneling devices and circuits with lattice-mismatched semi...
- Patent number 9,559,712
- Issue date Jan 31, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Photovoltaics on silicon
- Patent number 9,508,890
- Issue date Nov 29, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jizhong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for semiconductor sensor structures with reduced dislocatio...
- Patent number 9,455,299
- Issue date Sep 27, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Lattice-mismatched semiconductor structures with reduced dislocatio...
- Patent number 9,431,243
- Issue date Aug 30, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of edge effects from aspect ratio trapping
- Patent number 9,356,103
- Issue date May 31, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lattice-mismatched semiconductor structures with reduced dislocatio...
- Patent number 9,219,112
- Issue date Dec 22, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Semiconductor sensor structures with reduced dislocation defect den...
- Patent number 9,105,549
- Issue date Aug 11, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Quantum tunneling devices and circuits with lattice-mismatched semi...
- Patent number 9,105,522
- Issue date Aug 11, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Reduction of edge effects from aspect ratio trapping
- Patent number 8,994,070
- Issue date Mar 31, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lattice-mismatched semiconductor structures with reduced dislocatio...
- Patent number 8,987,028
- Issue date Mar 24, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum tunneling devices and circuits with lattice-mismatched semi...
- Patent number 8,860,160
- Issue date Oct 14, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for semiconductor sensor structures with reduced dislocation...
- Patent number 8,809,106
- Issue date Aug 19, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lattice-mismatched semiconductor structures with reduced dislocatio...
- Patent number 8,796,734
- Issue date Aug 5, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Reduction of edge effects from aspect ratio trapping
- Patent number 8,629,045
- Issue date Jan 14, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum tunneling devices and circuits with lattice-mismatched semi...
- Patent number 8,629,047
- Issue date Jan 14, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Lattice-mismatched semiconductor structures with reduced dislocatio...
- Patent number 8,629,477
- Issue date Jan 14, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Lattice-mismatched semiconductor structures with reduced dislocatio...
- Patent number 8,519,436
- Issue date Aug 27, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Formation of devices by epitaxial layer overgrowth
- Patent number 8,384,196
- Issue date Feb 26, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
InP-based transistor fabrication
- Patent number 8,329,541
- Issue date Dec 11, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peide Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lattice-mismatched semiconductor structures with reduced dislocatio...
- Patent number 8,324,660
- Issue date Dec 4, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Reduction of edge effects from aspect ratio trapping
- Patent number 8,274,097
- Issue date Sep 25, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor sensor structures with reduced dislocation defect den...
- Patent number 8,253,211
- Issue date Aug 28, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Quantum tunneling devices and circuits with lattice-mismatched semi...
- Patent number 8,216,951
- Issue date Jul 10, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Formation of devices by epitaxial layer overgrowth
- Patent number 8,034,697
- Issue date Oct 11, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- James Fiorenza
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Quantum tunneling devices and circuits with lattice-mismatched semi...
- Patent number 7,875,958
- Issue date Jan 25, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Lattice-mismatched semiconductor structures on insulators
- Patent number 7,638,842
- Issue date Dec 29, 2009
- AmberWave Systems Corporation
- Matthew T. Currie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a digitalized semiconductor structure
- Patent number 7,390,701
- Issue date Jun 24, 2008
- Massachusetts Institute of Technology
- Zhiyuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INP-BASED TRANSISTOR FABRICATION
- Publication number 20180019320
- Publication date Jan 18, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peide Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTOVOLTAICS ON SILICON
- Publication number 20170077330
- Publication date Mar 16, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jizhong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduction of Edge Effects from Aspect Ratio Trapping
- Publication number 20160254152
- Publication date Sep 1, 2016
- Taiwan Semiconductor Manufacturing Company,
- Zhiyuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATTICE-MISMATCHED SEMICONDUCTOR STRUCTURES WITH REDUCED DISLOCATIO...
- Publication number 20160111285
- Publication date Apr 21, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SENSOR STRUCTURES WITH REDUCED DISLOCATION DEFECT DEN...
- Publication number 20150325619
- Publication date Nov 12, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semi...
- Publication number 20150311911
- Publication date Oct 29, 2015
- Taiwan Semiconductor Manufacturing Co., LTD
- Zhiyuan Cheng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...
- Publication number 20150200246
- Publication date Jul 16, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduction of Edge Effects from Aspect Ratio Trapping
- Publication number 20150179745
- Publication date Jun 25, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semi...
- Publication number 20150001469
- Publication date Jan 1, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...
- Publication number 20140374798
- Publication date Dec 25, 2014
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Sensor Structures with Reduced Dislocation Defect Den...
- Publication number 20140327060
- Publication date Nov 6, 2014
- Zhiyuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semi...
- Publication number 20140167098
- Publication date Jun 19, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
Reduction of Edge Effects from Aspect Ratio Trapping
- Publication number 20140103394
- Publication date Apr 17, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...
- Publication number 20140106546
- Publication date Apr 17, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...
- Publication number 20130285116
- Publication date Oct 31, 2013
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...
- Publication number 20130105860
- Publication date May 2, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
InP-Based Transistor Fabrication
- Publication number 20130040431
- Publication date Feb 14, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peide Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Sensor Structures with Reduced Dislocation Defect Den...
- Publication number 20130029449
- Publication date Jan 31, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduction of Edge Effects from Aspect Ratio Trapping
- Publication number 20120315744
- Publication date Dec 13, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semi...
- Publication number 20120309113
- Publication date Dec 6, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
Formation of Devices by Epitaxial Layer Overgrowth
- Publication number 20120068226
- Publication date Mar 22, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jennifer Hydrick
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semi...
- Publication number 20110086498
- Publication date Apr 14, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zhiyuan Cheng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...
- Publication number 20110049568
- Publication date Mar 3, 2011
- Anthony J. Lochtefeld
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Formation of Devices by Epitaxial Layer Overgrowth
- Publication number 20100216277
- Publication date Aug 26, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- James Fiorenza
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
SEMICONDUCTOR SENSOR STRUCTURES WITH REDUCED DISLOCATION DEFECT DEN...
- Publication number 20100078680
- Publication date Apr 1, 2010
- AmberWave Systems Corporation
- Zhiyuan Cheng
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
REDUCTION OF EDGE EFFECTS FROM ASPECT RATION TRAPPING
- Publication number 20100025683
- Publication date Feb 4, 2010
- AmberWave Systems Corporation
- Zhiyuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
InP-Based Transistor Fabrication
- Publication number 20090042344
- Publication date Feb 12, 2009
- AmberWave Systems Corporation
- Peide Ye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTOVOLTAICS ON SILICON
- Publication number 20080257409
- Publication date Oct 23, 2008
- AmberWave Systems Corporation
- Jizhong Li
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
QUANTUM TUNNELING DEVICES AND CIRCUITS WITH LATTICE-MISMATCHED SEMI...
- Publication number 20080073641
- Publication date Mar 27, 2008
- AmberWave Systems Corporation
- Zhiyuan Cheng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Lattice-mismatched semiconductor structures with reduced dislocatio...
- Publication number 20070267722
- Publication date Nov 22, 2007
- AmberWave Systems Corporation
- Anthony J. Lochtefeld
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

Zhiyuan Cheng

Person

Patents Grantslast 30 patents

Photovoltaics on silicon

InP-based transistor fabrication

Reduction of edge effects from aspect ratio trapping

Quantum tunneling devices and circuits with lattice-mismatched semi...

Photovoltaics on silicon

Methods for semiconductor sensor structures with reduced dislocatio...

Lattice-mismatched semiconductor structures with reduced dislocatio...

Reduction of edge effects from aspect ratio trapping

Lattice-mismatched semiconductor structures with reduced dislocatio...

Semiconductor sensor structures with reduced dislocation defect den...

Quantum tunneling devices and circuits with lattice-mismatched semi...

Reduction of edge effects from aspect ratio trapping

Lattice-mismatched semiconductor structures with reduced dislocatio...

Quantum tunneling devices and circuits with lattice-mismatched semi...

Method for semiconductor sensor structures with reduced dislocation...

Lattice-mismatched semiconductor structures with reduced dislocatio...

Reduction of edge effects from aspect ratio trapping

Quantum tunneling devices and circuits with lattice-mismatched semi...

Lattice-mismatched semiconductor structures with reduced dislocatio...

Lattice-mismatched semiconductor structures with reduced dislocatio...

Formation of devices by epitaxial layer overgrowth

InP-based transistor fabrication

Lattice-mismatched semiconductor structures with reduced dislocatio...

Reduction of edge effects from aspect ratio trapping

Semiconductor sensor structures with reduced dislocation defect den...

Quantum tunneling devices and circuits with lattice-mismatched semi...

Formation of devices by epitaxial layer overgrowth

Quantum tunneling devices and circuits with lattice-mismatched semi...

Lattice-mismatched semiconductor structures on insulators

Method of forming a digitalized semiconductor structure

Patents Applicationslast 30 patents

INP-BASED TRANSISTOR FABRICATION

PHOTOVOLTAICS ON SILICON

Reduction of Edge Effects from Aspect Ratio Trapping

LATTICE-MISMATCHED SEMICONDUCTOR STRUCTURES WITH REDUCED DISLOCATIO...

SEMICONDUCTOR SENSOR STRUCTURES WITH REDUCED DISLOCATION DEFECT DEN...

Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semi...

Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...

Reduction of Edge Effects from Aspect Ratio Trapping

Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semi...

Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...

Semiconductor Sensor Structures with Reduced Dislocation Defect Den...

Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semi...

Reduction of Edge Effects from Aspect Ratio Trapping

Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...

Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...

Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...

InP-Based Transistor Fabrication

Semiconductor Sensor Structures with Reduced Dislocation Defect Den...

Reduction of Edge Effects from Aspect Ratio Trapping

Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semi...

Formation of Devices by Epitaxial Layer Overgrowth

Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semi...

Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...

Formation of Devices by Epitaxial Layer Overgrowth

SEMICONDUCTOR SENSOR STRUCTURES WITH REDUCED DISLOCATION DEFECT DEN...

REDUCTION OF EDGE EFFECTS FROM ASPECT RATION TRAPPING

InP-Based Transistor Fabrication

PHOTOVOLTAICS ON SILICON

QUANTUM TUNNELING DEVICES AND CIRCUITS WITH LATTICE-MISMATCHED SEMI...

Lattice-mismatched semiconductor structures with reduced dislocatio...