Alloying of impurity materials

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/40Alloying of impurity materials

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Patents Grantslast 30 patents

Information Patent Grant
Aluminum oxide semiconductor manufacturing method and aluminum oxid...
- Patent number 11,410,850
- Issue date Aug 9, 2022
- UACJ Corporation
- Hiroki Arima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 11,387,116
- Issue date Jul 12, 2022
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized tunneling enhancement for semiconductor devices
- Patent number 10,636,875
- Issue date Apr 28, 2020
- Northrop Grumman Systems Corporation
- Yeong-Chang Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 10,615,052
- Issue date Apr 7, 2020
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for forming a semiconductor device
- Patent number 10,079,281
- Issue date Sep 18, 2018
- Infineon Technologies AG
- Gerhard Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 10,002,775
- Issue date Jun 19, 2018
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film transistor and method for manufacturing same
- Patent number 9,825,180
- Issue date Nov 21, 2017
- National Institute for Materials Science
- Toshihide Nabatame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film transistor and method for manufacturing same
- Patent number 9,741,864
- Issue date Aug 22, 2017
- National Institute for Materials Science
- Toshihide Nabatame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming nanocrystals with position-controlled dopants
- Patent number 9,406,759
- Issue date Aug 2, 2016
- University of Florida Research Foundation, Inc.
- Y. Charles Cao
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
II-VI group compound semiconductor device
- Patent number 5,767,536
- Issue date Jun 16, 1998
- Sharp Kabushiki Kaisha
- Masanori Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor pn junction
- Patent number 4,526,632
- Issue date Jul 2, 1985
- Jun-Ichi Nishizawa
- Jun-ichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor integrated circuit with inversion preventing electrode
- Patent number 4,520,382
- Issue date May 28, 1985
- Hitachi, Ltd.
- Tastuo Shimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lead chalcogenide semiconductor device
- Patent number 4,413,343
- Issue date Nov 1, 1983
- Hirokazu Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing pn junction in group II-VI compound semicon...
- Patent number 4,389,256
- Issue date Jun 21, 1983
- Nishizawa; Jun-ichi
- Jun-ichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Liquid metal inclusion migration by means of an electrical potentia...
- Patent number 4,377,423
- Issue date Mar 22, 1983
- General Electric Company
- Thomas R. Anthony
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming spaced electrically isolated regions in a body o...
- Patent number 4,063,966
- Issue date Dec 20, 1977
- General Electric Company
- Thomas R. Anthony
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacture
- Patent number 4,006,040
- Issue date Feb 1, 1977
- General Electric Company
- Harvey E. Cline
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making isolation grids in bodies of semiconductor material
- Patent number 3,979,230
- Issue date Sep 7, 1976
- General Electric Company
- Thomas R. Anthony
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep finger diodes
- Patent number 3,977,910
- Issue date Aug 31, 1976
- General Electric Company
- Thomas R. Anthony
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep power diode
- Patent number 3,972,742
- Issue date Aug 3, 1976
- General Electric Company
- Harvey E. Cline
- C30 - CRYSTAL GROWTH
Information Patent Grant
3614551
- Patent number 3,614,551
- Issue date Oct 19, 1971
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3515954
- Patent number 3,515,954
- Issue date Jun 2, 1970
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2865794
- Patent number 2,865,794
- Issue date Dec 23, 1958
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING...
- Publication number 20210272810
- Publication date Sep 2, 2021
- UACJ CORPORATION
- Hiroki Arima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20200203183
- Publication date Jun 25, 2020
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20180277392
- Publication date Sep 27, 2018
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20160284564
- Publication date Sep 29, 2016
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME
- Publication number 20160118501
- Publication date Apr 28, 2016
- National Institute for Materials Science
- Toshihide NABATAME
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICE HAVING METAL INTERCONNECTION LEVELS CONNECTE...
- Publication number 20130187276
- Publication date Jul 25, 2013
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
- Thomas Ernst
- B82 - NANO-TECHNOLOGY
Information Patent Application
Doped Nanocrystals
- Publication number 20100055462
- Publication date Mar 4, 2010
- Y. Charles Cao
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...

Alloying of impurity materials

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Aluminum oxide semiconductor manufacturing method and aluminum oxid...

Method of manufacturing semiconductor device

Localized tunneling enhancement for semiconductor devices

Method of manufacturing semiconductor device

Semiconductor devices and methods for forming a semiconductor device

Method of manufacturing semiconductor device

Thin-film transistor and method for manufacturing same

Thin-film transistor and method for manufacturing same

Methods for forming nanocrystals with position-controlled dopants

II-VI group compound semiconductor device

Method of fabricating a semiconductor pn junction

Semiconductor integrated circuit with inversion preventing electrode

Lead chalcogenide semiconductor device

Method of manufacturing pn junction in group II-VI compound semicon...

Liquid metal inclusion migration by means of an electrical potentia...

Method for forming spaced electrically isolated regions in a body o...

Semiconductor device manufacture

Method of making isolation grids in bodies of semiconductor material

Deep finger diodes

Deep power diode

3614551

3515954

2865794

Patents Applicationslast 30 patents

SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME

MICROELECTRONIC DEVICE HAVING METAL INTERCONNECTION LEVELS CONNECTE...

Doped Nanocrystals