Number | Date | Country | Kind |
---|---|---|---|
55-81213 | Jun 1980 | JPX |
This application is a continuation-in-part of our earlier application Ser. No. 270,817 filed June 5, 1981, and abandoned.
Number | Name | Date | Kind |
---|---|---|---|
3070467 | Fuller et al. | Dec 1962 | |
3496429 | Robinson | Feb 1970 | |
3549434 | Aven | Dec 1970 | |
3551117 | Yamanaka et al. | Dec 1970 | |
3615877 | Yamashita | Oct 1971 | |
3670220 | Kun et al. | Jun 1972 | |
3745073 | Kun et al. | Jul 1973 | |
3940847 | Park et al. | Mar 1976 | |
4190486 | Kyle | Feb 1980 | |
4389256 | Nishizawa et al. | Jun 1983 | |
4465527 | Nishizawa | Aug 1984 |
Number | Date | Country |
---|---|---|
1946930 | Mar 1970 | DEX |
2046036 | Apr 1971 | DEX |
952361 | Mar 1964 | GBX |
Entry |
---|
Washiyama et al., "Growth of ZnS, ZnSe from Solution Containing Te and Their Light-Emitting Characteristics", Electronic Materials EFM-78-12, Inst. of Electrical Engineers of Japan, Tokyo, Jpn., Nov. 29, 1978, pp. 1-9. |
Journal of Crystal Growth, 39, 1977, pp. 73 to 91. |
II-VI Semiconducting Compounds, 1967; pp. 394-399. |
J. Electrochem. Soc., pp. 41C-43C, Righthand col. (Feb. 1970). |
Jpn. Journal of Applied Physics, vol. 10, No. 4, Apr. 1971, Tokyo (JP), S. Fujita et al.: "Epitaxial Solution Growth of ZnTe on ZnSe", pp. 516-517. |
Number | Date | Country | |
---|---|---|---|
Parent | 270817 | Jun 1981 |