Amphoteric doping

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CPC
Y10S438/915

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S438/00Semiconductor device manufacturing: process

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Y10S438/915Amphoteric doping

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Patents Grantslast 30 patents

Information Patent Grant
Method of delaminating a pre-fabricated transistor layer from a sub...
- Patent number 6,727,549
- Issue date Apr 27, 2004
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having capacitor and method of manufacturing t...
- Patent number 6,399,457
- Issue date Jun 4, 2002
- Samsung Electronics Co., Ltd.
- Byung-lyul Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having capacitor and method of manufacturing t...
- Patent number 6,261,890
- Issue date Jul 17, 2001
- Samsung Electronics Co., Ltd.
- Byung-lyul Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for lift off and handling of thin film materials
- Patent number 6,214,733
- Issue date Apr 10, 2001
- ELO Technologies, Inc.
- Mike E. Sickmiller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of delaminating a pre-fabricated transistor layer from a sub...
- Patent number 6,054,370
- Issue date Apr 25, 2000
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon diffusion doping method employing a deposited doped oxi...
- Patent number 5,895,259
- Issue date Apr 20, 1999
- Advanced Micro Devices, Inc.
- W. Mark Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method for horizontal direction semiconductor PN juncti...
- Patent number 5,882,950
- Issue date Mar 16, 1999
- Korea Institute of Science and Technology
- Suk-Ki Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing III-V semiconductor layers with high effective ho...
- Patent number 4,939,102
- Issue date Jul 3, 1990
- American Telephone and Telegraph Company
- Robert A. Hamm
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Znse green light emitting diode
- Patent number 4,755,856
- Issue date Jul 5, 1988
- Jun-Ichi Nishizawa
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming low leakage CMOS device on insulating substrate
- Patent number 4,753,895
- Issue date Jun 28, 1988
- Hughes Aircraft Company
- Donald C. Mayer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ZnSe green light emitting diode
- Patent number 4,725,563
- Issue date Feb 16, 1988
- Zaidan Hojim Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of performing solution growth of a GaAs compound semiconduct...
- Patent number 4,692,194
- Issue date Sep 8, 1987
- Zaidan Hojin Handotai Kenkyu Shinkokai
- Jun-ichi Nishizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Intermetallic semiconductor ohmic contact
- Patent number 4,583,110
- Issue date Apr 15, 1986
- International Business Machines Corporation
- Thomas N. Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Elimination of silicon pyramids from epitaxial crystals of GaAs and...
- Patent number 4,384,398
- Issue date May 24, 1983
- Bell Telephone Laboratories, Incorporated
- Bulusu V. Dutt
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making a light emitting diode
- Patent number 4,300,960
- Issue date Nov 17, 1981
- Matsushita Electric Industrial Co., Ltd.
- Susumu Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation of silicon doped mercury cadmium telluride
- Patent number 4,105,472
- Issue date Aug 8, 1978
- Honeywell, Inc.
- Robert A. Lancaster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon as donor dopant in Hg.sub.1-x Cd.sub.x Te
- Patent number 4,087,293
- Issue date May 2, 1978
- Honeywell Inc.
- Robert A. Lancaster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Amphoteric heterojunction
- Patent number 4,035,205
- Issue date Jul 12, 1977
- U.S. Philips Corporation
- Jacques Lebailly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium arsenide infrared light emitting diode
- Patent number 4,008,485
- Issue date Feb 15, 1977
- Hitachi, Ltd.
- Tadahiko Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing infrared luminescent diodes
- Patent number 3,998,672
- Issue date Dec 21, 1976
- Hitachi, Ltd.
- Tadahiko Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solution growth system for the preparation of semiconductor materials
- Patent number 3,933,539
- Issue date Jan 20, 1976
- Texas Instruments Incorporated
- William W. Gartman
- C30 - CRYSTAL GROWTH
Information Patent Grant
3925147
- Patent number 3,925,147
- Issue date Dec 9, 1975
- C30 - CRYSTAL GROWTH
Information Patent Grant
3751310
- Patent number 3,751,310
- Issue date Aug 7, 1973
- C30 - CRYSTAL GROWTH
Information Patent Grant
3676228
- Patent number 3,676,228
- Issue date Jul 11, 1972
- C30 - CRYSTAL GROWTH
Information Patent Grant
3600240
- Patent number 3,600,240
- Issue date Aug 17, 1971
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3560275
- Patent number 3,560,275
- Issue date Feb 2, 1971
- C30 - CRYSTAL GROWTH
Information Patent Grant
3459603
- Patent number 3,459,603
- Issue date Aug 5, 1969
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3181226
- Patent number 3,181,226
- Issue date May 4, 1965
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3158512
- Patent number 3,158,512
- Issue date Nov 24, 1964
- C30 - CRYSTAL GROWTH
Information Patent Grant
3085032
- Patent number 3,085,032
- Issue date Apr 9, 1963
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device having capacitor and method of manufacturing t...
- Publication number 20010027004
- Publication date Oct 4, 2001
- Samsung Electronics Co., Ltd.
- Byung-Lyul Park
- H01 - BASIC ELECTRIC ELEMENTS

Amphoteric doping

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of delaminating a pre-fabricated transistor layer from a sub...

Semiconductor device having capacitor and method of manufacturing t...

Semiconductor device having capacitor and method of manufacturing t...

Process for lift off and handling of thin film materials

Method of delaminating a pre-fabricated transistor layer from a sub...

Polysilicon diffusion doping method employing a deposited doped oxi...

Fabrication method for horizontal direction semiconductor PN juncti...

Method of growing III-V semiconductor layers with high effective ho...

Znse green light emitting diode

Method of forming low leakage CMOS device on insulating substrate

ZnSe green light emitting diode

Method of performing solution growth of a GaAs compound semiconduct...

Intermetallic semiconductor ohmic contact

Elimination of silicon pyramids from epitaxial crystals of GaAs and...

Method of making a light emitting diode

Preparation of silicon doped mercury cadmium telluride

Silicon as donor dopant in Hg.sub.1-x Cd.sub.x Te

Amphoteric heterojunction

Gallium arsenide infrared light emitting diode

Method of producing infrared luminescent diodes

Solution growth system for the preparation of semiconductor materials

3925147

3751310

3676228

3600240

3560275

3459603

3181226

3158512

3085032

Patents Applicationslast 30 patents

Semiconductor device having capacitor and method of manufacturing t...