3676228

Information

• Patent Grant
• 3676228

• References
• Source

• Patent Number

  3,676,228

• Date Filed

  Not available

• Date Issued

  Tuesday, July 11, 1972
  52 years ago

• CPC

  • C30B19/08 - Heating of the reaction chamber or the substrate
  • C30B19/10 - Controlling or regulating
  • H01L21/02395 - Arsenides
  • H01L21/02463 - Arsenides
  • H01L21/02502 - consisting of two layers
  • H01L21/02546 - Arsenides
  • H01L21/02576 - N-type
  • H01L21/02579 - P-type
  • H01L21/02625 - using melted materials
  • Y10S438/915 - Amphoteric doping

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 257 - Active solid-state devices
  • 438 - Semiconductor device manufacturing: process