3751310

Information

• Patent Grant
• 3751310

• References
• Source

• Patent Number

  3,751,310

• Date Filed

  Not available

• Date Issued

  Tuesday, August 7, 1973
  51 years ago

• CPC

  • C30B23/02 - Epitaxial-layer growth
  • C30B29/40 - AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
  • H01L21/02395 - Arsenides
  • H01L21/02546 - Arsenides
  • H01L21/02576 - N-type
  • H01L21/02579 - P-type
  • H01L21/02631 - Physical deposition at reduced pressure
  • H01L33/0062 - for devices with an active region comprising only III-V compounds
  • Y10S148/002 - Amphoteric doping
  • Y10S148/018 - Compensation doping
  • Y10S148/02 - Contacts, special
  • Y10S148/065 - Gp III-V generic compounds-processing
  • Y10S148/072 - Heterojunctions
  • Y10S148/169 - Vacuum deposition
  • Y10S252/951 - for vapor transport
  • Y10S438/915 - Amphoteric doping
  • Y10S438/925 - Fluid growth doping control

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 252 - Compositions
  • 257 - Active solid-state devices
  • 423 - Chemistry of inorganic compounds
  • 438 - Semiconductor device manufacturing: process