Anode or cathode regions of thyristors or gated bipolar-mode devices

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H01L29/083

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Reverse conducting IGBT with controlled anode injection
- Patent number 12,166,111
- Issue date Dec 10, 2024
- DYNEX SEMICONDUCTOR LIMITED
- Luther-King Ekonde Ngwendson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for bi-directional trench power switches
- Patent number 12,148,819
- Issue date Nov 19, 2024
- Ideal Power Inc.
- Jiankang Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor
- Patent number 12,119,395
- Issue date Oct 15, 2024
- Southeast University
- Long Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,113,105
- Issue date Oct 8, 2024
- Renesas Electronics Corporation
- Nao Nagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,080,707
- Issue date Sep 3, 2024
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate semiconductor device and method of manufacturing the...
- Patent number 12,074,200
- Issue date Aug 27, 2024
- Fuji Electric Co., Ltd.
- Keiji Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor semiconductor device and corresponding manufacturing method
- Patent number 12,034,046
- Issue date Jul 9, 2024
- STMicroelectronics (Crolles 2) SAS
- Nicolas Guitard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,027,578
- Issue date Jul 2, 2024
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, semiconductor package, semiconductor module,...
- Patent number 12,025,507
- Issue date Jul 2, 2024
- Fuji Electric Co., Ltd.
- Kenichiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SCR having selective well contacts
- Patent number 12,027,612
- Issue date Jul 2, 2024
- Texas Instruments Incorporated
- Karmel Kranthi Nagothu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device, power conversion device, and...
- Patent number 12,027,590
- Issue date Jul 2, 2024
- Mitsubishi Electric Corporation
- Munetaka Noguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,009,360
- Issue date Jun 11, 2024
- Mitsubishi Electric Corporation
- Munenori Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,923,443
- Issue date Mar 5, 2024
- Kabushiki Kaisha Toshiba
- Shoko Hanagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,901,444
- Issue date Feb 13, 2024
- Mitsubishi Electric Corporation
- Ryu Kamibaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with bi-directional double-base trench power s...
- Patent number 11,881,525
- Issue date Jan 23, 2024
- Ideal Power Inc.
- Jiankang Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including IGBT, boundary, and diode regions
- Patent number 11,875,990
- Issue date Jan 16, 2024
- Mitsubishi Electric Corporation
- Tetsuya Nitta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,869,961
- Issue date Jan 9, 2024
- Fuji Electric Co., Ltd.
- Hiroshi Miyata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,869,962
- Issue date Jan 9, 2024
- Mitsubishi Electric Corporation
- Ryu Kamibaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structure of a power semiconductor device
- Patent number 11,848,354
- Issue date Dec 19, 2023
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having overvoltage protection and method...
- Patent number 11,843,045
- Issue date Dec 12, 2023
- Infineon Technologies Austria AG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated gate-commutated thyristor (IGCT)
- Patent number 11,824,091
- Issue date Nov 21, 2023
- Hitachi Energy Switzerland AG
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back side dopant activation in field stop IGBT
- Patent number 11,824,090
- Issue date Nov 21, 2023
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate semiconductor device and method of manufacturing the...
- Patent number 11,798,993
- Issue date Oct 24, 2023
- Fuji Electric Co., Ltd.
- Keiji Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,784,220
- Issue date Oct 10, 2023
- Kabushiki Kaisha Toshiba
- Hideaki Sai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS(metal oxide silicon) controlled thyristor device
- Patent number 11,784,247
- Issue date Oct 10, 2023
- Electronics and Telecommunications Research Institute
- Kun Sik Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical overstress protection with low leakage current for high...
- Patent number 11,784,488
- Issue date Oct 10, 2023
- Analog Devices International Unlimited Company
- Javier A. Salcedo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors including source/drain employing double-charge dopants
- Patent number 11,757,004
- Issue date Sep 12, 2023
- Intel Corporation
- Glenn A. Glass
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical power semiconductor device including a field stop region h...
- Patent number 11,742,384
- Issue date Aug 29, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,735,584
- Issue date Aug 22, 2023
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,676,960
- Issue date Jun 13, 2023
- Fuji Electric Co., Ltd.
- Yuichi Onozawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING A SEMICONDUCTOR DEVICE
- Publication number 20250015172
- Publication date Jan 9, 2025
- Hitachi Energy Ltd
- Tobias WIKSTROEM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT, Method of Operating an RC IGBT, and a Circuit Including an IGBT
- Publication number 20250006727
- Publication date Jan 2, 2025
- INFINEON TECHNOLOGIES AG
- Frank Pfirsch
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
INSULATED GATE POWER DEVICE WITH EPITAXIALLY GROWN SUBSTRATE LAYERS
- Publication number 20240405107
- Publication date Dec 5, 2024
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240371860
- Publication date Nov 7, 2024
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240347586
- Publication date Oct 17, 2024
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240339500
- Publication date Oct 10, 2024
- Mitsubishi Electric Corporation
- Katsumi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240322020
- Publication date Sep 26, 2024
- Kabushiki Kaisha Toshiba
- Daiki YOSHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THYRISTOR BASED ON CHARGE PLASMA AND CROSS-POINT MEMORY ARRAY INCLU...
- Publication number 20240322023
- Publication date Sep 26, 2024
- IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
- Sang Dong YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC-IGBT
- Publication number 20240313095
- Publication date Sep 19, 2024
- Mitsubishi Electric Corporation
- Shinya SONEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PEAK ON-STATE VOLTAGE REDUCTION FOR SEMICONDUCTOR DEVICE...
- Publication number 20240290828
- Publication date Aug 29, 2024
- Littelfuse Semiconductor (Wuxi) Co., Ltd
- Xingchong Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240258306
- Publication date Aug 1, 2024
- Mitsubishi Electric Corporation
- Munenori IKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240234554
- Publication date Jul 11, 2024
- Fuji Electric Co., Ltd.
- Naoki MITAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240162287
- Publication date May 16, 2024
- Fuji Electric Co., Ltd.
- Yasunori AGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20240128320
- Publication date Apr 18, 2024
- Fuji Electric Co., Ltd.
- Shuntaro YAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR BI-DIRECTIONAL TRENCH POWER SWITCHES
- Publication number 20240113210
- Publication date Apr 4, 2024
- IDEAL POWER INC.
- Jiankang BU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240063265
- Publication date Feb 22, 2024
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Markus Droldner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240055483
- Publication date Feb 15, 2024
- Fuji Electric Co., Ltd.
- Yuki KARAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD STOP IGBT WITH GROWN INJECTION REGION
- Publication number 20240055484
- Publication date Feb 15, 2024
- IPOWER SEMICONDUCTOR
- HAMZA YILMAZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE...
- Publication number 20240014270
- Publication date Jan 11, 2024
- Fuji Electric Co., Ltd.
- Keiji OKUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODULE COMPRISING A SWITCHABLE BYPASS DEVICE
- Publication number 20230411503
- Publication date Dec 21, 2023
- Hitachi Energy Switzerland AG
- Jan VOBECKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING POWER SEMICO...
- Publication number 20230369515
- Publication date Nov 16, 2023
- Mitsubishi Electric Corporation
- Katsumi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230361111
- Publication date Nov 9, 2023
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Power Semiconductor Device and Manufacturing Method
- Publication number 20230352531
- Publication date Nov 2, 2023
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230335590
- Publication date Oct 19, 2023
- RENESAS ELECTRONICS CORPORATION
- Nao Nagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20230317818
- Publication date Oct 5, 2023
- Hitachi Energy Switzerland AG
- Jan VOBECKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230307446
- Publication date Sep 28, 2023
- Fuji Electric Co., Ltd.
- Yuichi HARADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20230290828
- Publication date Sep 14, 2023
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230268341
- Publication date Aug 24, 2023
- Fuji Electric Co., Ltd.
- Yuichi ONOZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP UNIPOLAR/BIPOLAR TRANSISTOR
- Publication number 20230246073
- Publication date Aug 3, 2023
- Wolfspeed, Inc.
- Thomas E. Harrington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230197827
- Publication date Jun 22, 2023
- RENESAS ELECTRONICS CORPORATION
- Zhichao LIN
- H01 - BASIC ELECTRIC ELEMENTS

Anode or cathode regions of thyristors or gated bipolar-mode devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Reverse conducting IGBT with controlled anode injection

System and method for bi-directional trench power switches

Insulated gate bipolar transistor

Semiconductor device

Semiconductor device

Insulated-gate semiconductor device and method of manufacturing the...

Thyristor semiconductor device and corresponding manufacturing method

Semiconductor device

Semiconductor device, semiconductor package, semiconductor module,...

SCR having selective well contacts

Silicon carbide semiconductor device, power conversion device, and...

Semiconductor device and method for manufacturing the same

Semiconductor device

Method for manufacturing semiconductor device

Semiconductor device with bi-directional double-base trench power s...

Semiconductor device including IGBT, boundary, and diode regions

Semiconductor device and method of manufacturing semiconductor device

Method for manufacturing semiconductor device

Diode structure of a power semiconductor device

Power semiconductor device having overvoltage protection and method...

Integrated gate-commutated thyristor (IGCT)

Back side dopant activation in field stop IGBT

Insulated-gate semiconductor device and method of manufacturing the...

Semiconductor device

MOS(metal oxide silicon) controlled thyristor device

Electrical overstress protection with low leakage current for high...

Transistors including source/drain employing double-charge dopants

Vertical power semiconductor device including a field stop region h...

Semiconductor device

Semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING A SEMICONDUCTOR DEVICE

IGBT, Method of Operating an RC IGBT, and a Circuit Including an IGBT

INSULATED GATE POWER DEVICE WITH EPITAXIALLY GROWN SUBSTRATE LAYERS

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

THYRISTOR BASED ON CHARGE PLASMA AND CROSS-POINT MEMORY ARRAY INCLU...

RC-IGBT

METHOD OF PEAK ON-STATE VOLTAGE REDUCTION FOR SEMICONDUCTOR DEVICE...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

SYSTEM AND METHOD FOR BI-DIRECTIONAL TRENCH POWER SWITCHES

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

FIELD STOP IGBT WITH GROWN INJECTION REGION

INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE...

MODULE COMPRISING A SWITCHABLE BYPASS DEVICE

POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING POWER SEMICO...

SEMICONDUCTOR DEVICE

Vertical Power Semiconductor Device and Manufacturing Method

SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

INSULATED GATE BIPOLAR TRANSISTOR

SEMICONDUCTOR DEVICE

WIDE BANDGAP UNIPOLAR/BIPOLAR TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME