Anode or cathode regions of thyristors or gated bipolar-mode devices

Industry

CPC
H01L29/083

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 11,923,443
- Issue date Mar 5, 2024
- Kabushiki Kaisha Toshiba
- Shoko Hanagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,901,444
- Issue date Feb 13, 2024
- Mitsubishi Electric Corporation
- Ryu Kamibaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with bi-directional double-base trench power s...
- Patent number 11,881,525
- Issue date Jan 23, 2024
- Ideal Power Inc.
- Jiankang Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including IGBT, boundary, and diode regions
- Patent number 11,875,990
- Issue date Jan 16, 2024
- Mitsubishi Electric Corporation
- Tetsuya Nitta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,869,961
- Issue date Jan 9, 2024
- Fuji Electric Co., Ltd.
- Hiroshi Miyata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,869,962
- Issue date Jan 9, 2024
- Mitsubishi Electric Corporation
- Ryu Kamibaba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structure of a power semiconductor device
- Patent number 11,848,354
- Issue date Dec 19, 2023
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having overvoltage protection and method...
- Patent number 11,843,045
- Issue date Dec 12, 2023
- Infineon Technologies Austria AG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated gate-commutated thyristor (IGCT)
- Patent number 11,824,091
- Issue date Nov 21, 2023
- Hitachi Energy Switzerland AG
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back side dopant activation in field stop IGBT
- Patent number 11,824,090
- Issue date Nov 21, 2023
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate semiconductor device and method of manufacturing the...
- Patent number 11,798,993
- Issue date Oct 24, 2023
- Fuji Electric Co., Ltd.
- Keiji Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical overstress protection with low leakage current for high...
- Patent number 11,784,488
- Issue date Oct 10, 2023
- Analog Devices International Unlimited Company
- Javier A. Salcedo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,784,220
- Issue date Oct 10, 2023
- Kabushiki Kaisha Toshiba
- Hideaki Sai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS(metal oxide silicon) controlled thyristor device
- Patent number 11,784,247
- Issue date Oct 10, 2023
- Electronics and Telecommunications Research Institute
- Kun Sik Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors including source/drain employing double-charge dopants
- Patent number 11,757,004
- Issue date Sep 12, 2023
- Intel Corporation
- Glenn A. Glass
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical power semiconductor device including a field stop region h...
- Patent number 11,742,384
- Issue date Aug 29, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,735,584
- Issue date Aug 22, 2023
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,676,960
- Issue date Jun 13, 2023
- Fuji Electric Co., Ltd.
- Yuichi Onozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacture for trench-gate insulated-gate bipolar trans...
- Patent number 11,670,706
- Issue date Jun 6, 2023
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Meng-Chia Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short-circuit semiconductor component and method for operating it
- Patent number 11,664,445
- Issue date May 30, 2023
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Mario Schenk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,631,665
- Issue date Apr 18, 2023
- Fuji Electric Co., Ltd.
- Yuichi Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate semiconductor device
- Patent number 11,610,969
- Issue date Mar 21, 2023
- Fuji Electric Co., Ltd.
- Keiji Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a transistor with one or more barrie...
- Patent number 11,610,976
- Issue date Mar 21, 2023
- Infineon Technologies Austria AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,569,092
- Issue date Jan 31, 2023
- Fuji Electric Co., Ltd.
- Takahiro Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor diode including field stop region
- Patent number 11,569,392
- Issue date Jan 31, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Twin gate tunnel field-effect transistor (FET)
- Patent number 11,557,663
- Issue date Jan 17, 2023
- International Business Machines Corporation
- Karthik Balakrishnan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device
- Patent number 11,527,639
- Issue date Dec 13, 2022
- Fuji Electric Co., Ltd.
- Tatsuya Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having IGBT and diode with field stop layer fo...
- Patent number 11,508,581
- Issue date Nov 22, 2022
- Fuji Electric Co., Ltd.
- Kouji Mukai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Testing apparatus, testing method, and manufacturing method
- Patent number 11,500,009
- Issue date Nov 15, 2022
- Fuji Electric Co., Ltd.
- Tetsutaro Imagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,489,047
- Issue date Nov 1, 2022
- Renesas Electronics Corporation
- Yasuhiro Okamoto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20240128320
- Publication date Apr 18, 2024
- Fuji Electric Co., Ltd.
- Shuntaro YAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR BI-DIRECTIONAL TRENCH POWER SWITCHES
- Publication number 20240113210
- Publication date Apr 4, 2024
- IDEAL POWER INC.
- Jiankang BU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240063265
- Publication date Feb 22, 2024
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Markus Droldner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240055483
- Publication date Feb 15, 2024
- Fuji Electric Co., Ltd.
- Yuki KARAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD STOP IGBT WITH GROWN INJECTION REGION
- Publication number 20240055484
- Publication date Feb 15, 2024
- IPOWER SEMICONDUCTOR
- HAMZA YILMAZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE...
- Publication number 20240014270
- Publication date Jan 11, 2024
- Fuji Electric Co., Ltd.
- Keiji OKUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODULE COMPRISING A SWITCHABLE BYPASS DEVICE
- Publication number 20230411503
- Publication date Dec 21, 2023
- Hitachi Energy Switzerland AG
- Jan VOBECKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING POWER SEMICO...
- Publication number 20230369515
- Publication date Nov 16, 2023
- Mitsubishi Electric Corporation
- Katsumi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230361111
- Publication date Nov 9, 2023
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Power Semiconductor Device and Manufacturing Method
- Publication number 20230352531
- Publication date Nov 2, 2023
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230335590
- Publication date Oct 19, 2023
- RENESAS ELECTRONICS CORPORATION
- Nao Nagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20230317818
- Publication date Oct 5, 2023
- Hitachi Energy Switzerland AG
- Jan VOBECKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230307446
- Publication date Sep 28, 2023
- Fuji Electric Co., Ltd.
- Yuichi HARADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20230290828
- Publication date Sep 14, 2023
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230268341
- Publication date Aug 24, 2023
- Fuji Electric Co., Ltd.
- Yuichi ONOZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP UNIPOLAR/BIPOLAR TRANSISTOR
- Publication number 20230246073
- Publication date Aug 3, 2023
- Wolfspeed, Inc.
- Thomas E. Harrington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230197827
- Publication date Jun 22, 2023
- RENESAS ELECTRONICS CORPORATION
- Zhichao LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A TRANSISTOR WITH TRENCHES AND MESAS
- Publication number 20230197828
- Publication date Jun 22, 2023
- Infineon Technologies Austria AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE...
- Publication number 20230154986
- Publication date May 18, 2023
- FUJI ELECTRIC CO., LTD.
- Keiji OKUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Gate-Commutated Thyristor (IGCT)
- Publication number 20230111333
- Publication date Apr 13, 2023
- Hitachi Energy Switzerland AG
- Tobias Wikstroem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS(METAL OXIDE SILICON) CONTROLLED THYRISTOR DEVICE
- Publication number 20230087416
- Publication date Mar 23, 2023
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Kun Sik PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT DEVICE BACKSIDE STRUCTURE AND PREPARATION METHOD THEREFOR, AND...
- Publication number 20230077959
- Publication date Mar 16, 2023
- STATE GRID SMART GRID RESEARCH INSTITUTE CO., LTD.
- Li LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230083162
- Publication date Mar 16, 2023
- Mitsubishi Electric Corporation
- Kazuya KONISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR BI-DIRECTIONAL TRENCH POWER SWITCHES
- Publication number 20230048984
- Publication date Feb 16, 2023
- IDEAL POWER INC.
- Jiankang BU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230038712
- Publication date Feb 9, 2023
- Fuji Electric Co., Ltd.
- Yuichi HARADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230039920
- Publication date Feb 9, 2023
- Fuji Electric Co., Ltd.
- Misaki UCHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR AND PREPARATION METHOD THEREOF, A...
- Publication number 20230015515
- Publication date Jan 19, 2023
- BYD SEMICONDUCTOR COMPANY LIMITED
- Hui ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A FIELD STOP REGION
- Publication number 20220406600
- Publication date Dec 22, 2022
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220392891
- Publication date Dec 8, 2022
- Fuji Electric Co., Ltd.
- Tatsuya NAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING AN RC-IGBT
- Publication number 20220384624
- Publication date Dec 1, 2022
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS

Anode or cathode regions of thyristors or gated bipolar-mode devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Method for manufacturing semiconductor device

Semiconductor device with bi-directional double-base trench power s...

Semiconductor device including IGBT, boundary, and diode regions

Semiconductor device and method of manufacturing semiconductor device

Method for manufacturing semiconductor device

Diode structure of a power semiconductor device

Power semiconductor device having overvoltage protection and method...

Integrated gate-commutated thyristor (IGCT)

Back side dopant activation in field stop IGBT

Insulated-gate semiconductor device and method of manufacturing the...

Electrical overstress protection with low leakage current for high...

Semiconductor device

MOS(metal oxide silicon) controlled thyristor device

Transistors including source/drain employing double-charge dopants

Vertical power semiconductor device including a field stop region h...

Semiconductor device

Semiconductor device

Methods of manufacture for trench-gate insulated-gate bipolar trans...

Short-circuit semiconductor component and method for operating it

Semiconductor device

Insulated-gate semiconductor device

Semiconductor device including a transistor with one or more barrie...

Semiconductor device

Power semiconductor diode including field stop region

Twin gate tunnel field-effect transistor (FET)

Semiconductor device

Semiconductor device having IGBT and diode with field stop layer fo...

Testing apparatus, testing method, and manufacturing method

Semiconductor device and method of manufacturing the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

SYSTEM AND METHOD FOR BI-DIRECTIONAL TRENCH POWER SWITCHES

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

FIELD STOP IGBT WITH GROWN INJECTION REGION

INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE...

MODULE COMPRISING A SWITCHABLE BYPASS DEVICE

POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING POWER SEMICO...

SEMICONDUCTOR DEVICE

Vertical Power Semiconductor Device and Manufacturing Method

SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

INSULATED GATE BIPOLAR TRANSISTOR

SEMICONDUCTOR DEVICE

WIDE BANDGAP UNIPOLAR/BIPOLAR TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE HAVING A TRANSISTOR WITH TRENCHES AND MESAS

INSULATED-GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE...

Integrated Gate-Commutated Thyristor (IGCT)

MOS(METAL OXIDE SILICON) CONTROLLED THYRISTOR DEVICE

IGBT DEVICE BACKSIDE STRUCTURE AND PREPARATION METHOD THEREFOR, AND...

SEMICONDUCTOR DEVICE

SYSTEM AND METHOD FOR BI-DIRECTIONAL TRENCH POWER SWITCHES

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

INSULATED GATE BIPOLAR TRANSISTOR AND PREPARATION METHOD THEREOF, A...

SEMICONDUCTOR DEVICE INCLUDING A FIELD STOP REGION

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING AN RC-IGBT