Autodoping control or utilization

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CPC
Y10S438/916

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S438/00Semiconductor device manufacturing: process

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Y10S438/916Autodoping control or utilization

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Patents Grantslast 30 patents

Information Patent Grant
Method and apparatus for forming a semiconductor substrate with a l...
- Patent number 7,214,592
- Issue date May 8, 2007
- Interuniversitair Microelektronica Centrum (IMEC)
- Radu Catalin Surdeanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Suppression of n-type autodoping in low-temperature Si and SiGe epi...
- Patent number 6,838,359
- Issue date Jan 4, 2005
- Koninklijke Philips Electronics N.V.
- Wiebe Barteld De Boer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preventing autodoping
- Patent number 6,635,556
- Issue date Oct 21, 2003
- Matrix Semiconductor, Inc.
- Scott B. Herner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid-state pickup element and method for producing the same
- Patent number 6,599,772
- Issue date Jul 29, 2003
- Sony Corporation
- Hideshi Abe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a circuit
- Patent number 6,465,333
- Issue date Oct 15, 2002
- NEC Corporation
- Tomoko Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capping layer in interconnect system and method for bonding the cap...
- Patent number 6,388,328
- Issue date May 14, 2002
- Intel Corporation
- Brian Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to prevent auto-doping induced threshold voltage shift
- Patent number 6,232,172
- Issue date May 15, 2001
- Taiwan Semiconductor Manufacturing Company
- Sen-Fu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing an epitaxial silicon single crystal wafer and...
- Patent number 6,162,708
- Issue date Dec 19, 2000
- Shin-Etsu Handotai Co., Ltd.
- Masaro Tamatsuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for controlling dopant diffusion in a semiconductor layer
- Patent number 6,043,139
- Issue date Mar 28, 2000
- Lucent Technologies Inc.
- David James Eaglesham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for controlling autodoping during epitaxial silicon deposition
- Patent number 6,007,624
- Issue date Dec 28, 1999
- Texas Instruments Incorporated
- Rick L. Wise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capping layer in interconnect system and method for bonding the cap...
- Patent number 5,863,832
- Issue date Jan 26, 1999
- Intel Corporation
- Brian Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planarization of shallow- trench- isolation without chemical mechan...
- Patent number 5,811,345
- Issue date Sep 22, 1998
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for controlling dopant diffusion in a semiconductor layer a...
- Patent number 5,731,626
- Issue date Mar 24, 1998
- Lucent Technologies Inc.
- David James Eaglesham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bifacial solar cell
- Patent number 5,665,175
- Issue date Sep 9, 1997
- Yakov Safir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making diffused doped areas for semiconductor components
- Patent number 5,461,002
- Issue date Oct 24, 1995
- Yakov Safir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for via formation and type conversion in group II and group...
- Patent number 5,318,666
- Issue date Jun 7, 1994
- Texas Instruments Incorporated
- Jerome L. Elkind
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Masking technique for depositing gallium arsenide on silicon
- Patent number 5,256,594
- Issue date Oct 26, 1993
- Intel Corporation
- Albert T. Wu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor wafer and manufacturing method therefor
- Patent number 5,225,235
- Issue date Jul 6, 1993
- Osaka Titanium Co., Ltd.
- Tetsujiro Yoshiharu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a heterostructure transistor having a germ...
- Patent number 5,047,365
- Issue date Sep 10, 1991
- NEC Corporation
- Masafumi Kawanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer and epitaxial growth on the semiconductor wafer...
- Patent number 4,925,809
- Issue date May 15, 1990
- Osaka Titanium Co., Ltd.
- Tetsujiro Yoshiharu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a multidimensional quantum-well array
- Patent number 4,883,769
- Issue date Nov 28, 1989
- The United States of America as represented by the Secretary of the Army
- Thomas R. Au Coin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing a semiconductor laser with autodoping control
- Patent number 4,855,250
- Issue date Aug 8, 1989
- Kabushiki Kaisha Toshiba
- Motoyuki Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial front seal for a wafer
- Patent number 4,696,701
- Issue date Sep 29, 1987
- Motorola, Inc.
- Daniel J. Sullivan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back sealing of silicon wafers
- Patent number 4,687,682
- Issue date Aug 18, 1987
- American Telephone and Telegraph Company, AT&T Technologies, Inc.
- Jeffrey T. Koze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for prevention of autodoping of epitaxial layers
- Patent number 4,662,956
- Issue date May 5, 1987
- Motorola, Inc.
- Scott S. Roth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for minimizing autodoping during epitaxial deposition utiliz...
- Patent number 4,571,275
- Issue date Feb 18, 1986
- International Business Machines Corporation
- Tor W. Moksvold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimum reduced pressure epitaxial growth process to prevent autodo...
- Patent number 4,504,330
- Issue date Mar 12, 1985
- International Business Machines Corporation
- Arun K. Gaind
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple double heterojunction buried laser device
- Patent number 4,484,332
- Issue date Nov 20, 1984
- The United States of America as represented by the Secretary of the Air Force
- Frank Z. Hawrylo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion barrier for long wavelength laser diodes
- Patent number 4,479,222
- Issue date Oct 23, 1984
- The United States of America as represented by the Secretary of the Air Force
- Frank Z. Hawrylo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabrication
- Patent number 4,379,005
- Issue date Apr 5, 1983
- International Business Machines Corporation
- Harold J. Hovel
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND APPARATUS FOR FORMING A SEMICONDUCTOR SUBSTRATE WITH A L...
- Publication number 20070267660
- Publication date Nov 22, 2007
- Interuniversitair Microelektronica Centrum (IMEC)
- Radu Catalin Surdeanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for forming a semiconductor substrate with a l...
- Publication number 20050112831
- Publication date May 26, 2005
- Radu Catalin Surdeanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of preventing autodoping
- Publication number 20040018731
- Publication date Jan 29, 2004
- MATRIX SEMICONDUCTOR, INC.
- Scott B. Herner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Suppression of n-type autodoping in low-temperature Si and SiGe epi...
- Publication number 20020168791
- Publication date Nov 14, 2002
- Wiebe Barteld De Boer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Solid-state pickup element and method for producing the same
- Publication number 20010054726
- Publication date Dec 27, 2001
- Hideshi Abe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of and apparatus for manufacturing circuit
- Publication number 20010031544
- Publication date Oct 18, 2001
- Tomoko Matsuda
- H01 - BASIC ELECTRIC ELEMENTS

Autodoping control or utilization

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method and apparatus for forming a semiconductor substrate with a l...

Suppression of n-type autodoping in low-temperature Si and SiGe epi...

Method of preventing autodoping

Solid-state pickup element and method for producing the same

Method of manufacturing a circuit

Capping layer in interconnect system and method for bonding the cap...

Method to prevent auto-doping induced threshold voltage shift

Method for producing an epitaxial silicon single crystal wafer and...

Process for controlling dopant diffusion in a semiconductor layer

Process for controlling autodoping during epitaxial silicon deposition

Capping layer in interconnect system and method for bonding the cap...

Planarization of shallow- trench- isolation without chemical mechan...

Process for controlling dopant diffusion in a semiconductor layer a...

Bifacial solar cell

Method of making diffused doped areas for semiconductor components

Method for via formation and type conversion in group II and group...

Masking technique for depositing gallium arsenide on silicon

Semiconductor wafer and manufacturing method therefor

Method for manufacturing a heterostructure transistor having a germ...

Semiconductor wafer and epitaxial growth on the semiconductor wafer...

Method of making a multidimensional quantum-well array

Method of manufacturing a semiconductor laser with autodoping control

Epitaxial front seal for a wafer

Back sealing of silicon wafers

Method for prevention of autodoping of epitaxial layers

Method for minimizing autodoping during epitaxial deposition utiliz...

Optimum reduced pressure epitaxial growth process to prevent autodo...

Multiple double heterojunction buried laser device

Diffusion barrier for long wavelength laser diodes

Semiconductor device fabrication

Patents Applicationslast 30 patents

METHOD AND APPARATUS FOR FORMING A SEMICONDUCTOR SUBSTRATE WITH A L...

Method and apparatus for forming a semiconductor substrate with a l...

Method of preventing autodoping

Suppression of n-type autodoping in low-temperature Si and SiGe epi...

Solid-state pickup element and method for producing the same

Method of and apparatus for manufacturing circuit