Base regions of thyristors

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H01L29/1012

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/1012Base regions of thyristors

Industries

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Patents Grantslast 30 patents

Information Patent Grant
System and method for bi-directional trench power switches
- Patent number 12,148,819
- Issue date Nov 19, 2024
- Ideal Power Inc.
- Jiankang Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection circuit with isolated SCR for negative voltage opera...
- Patent number 12,057,443
- Issue date Aug 6, 2024
- Texas Instruments Incorporated
- Akram A. Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with bi-directional double-base trench power s...
- Patent number 11,881,525
- Issue date Jan 23, 2024
- Ideal Power Inc.
- Jiankang Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS(metal oxide silicon) controlled thyristor device
- Patent number 11,784,247
- Issue date Oct 10, 2023
- Electronics and Telecommunications Research Institute
- Kun Sik Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer thyristor random access memory with silicon-germanium b...
- Patent number 11,444,085
- Issue date Sep 13, 2022
- TC Lab, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection circuit with isolated SCR for negative voltage opera...
- Patent number 11,302,688
- Issue date Apr 12, 2022
- Texas Instruments Incorporated
- Akram A. Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bypass thyristor device with gas expansion cavity within a contact...
- Patent number 11,139,219
- Issue date Oct 5, 2021
- ABB Schweiz AG
- Tobias Wikström
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection circuit with isolated SCR for negative voltage opera...
- Patent number 11,049,852
- Issue date Jun 29, 2021
- Texas Instruments Incorporated
- Akram A. Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer thyristor random access memory with silicon-germanium b...
- Patent number 10,978,456
- Issue date Apr 13, 2021
- TC Lab, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer thyristor random access memory with silicon-germanium b...
- Patent number 10,700,069
- Issue date Jun 30, 2020
- TC Lab, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor and method of fabricating the same
- Patent number 10,600,894
- Issue date Mar 24, 2020
- QUALCOMM Incorporated
- Sinan Goktepeli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection circuit with isolated SCR for negative voltage opera...
- Patent number 10,083,951
- Issue date Sep 25, 2018
- Texas Instruments Incorporated
- Akram A. Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI integrated circuit equipped with a device for protecting agains...
- Patent number 10,062,681
- Issue date Aug 28, 2018
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Yohann Solaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-coupled thyristor SRAM semiconductor structures and methods o...
- Patent number 10,056,389
- Issue date Aug 21, 2018
- Kilopass Technology, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Bipolar SCR
- Patent number 9,881,913
- Issue date Jan 30, 2018
- Texas Instruments Incorporated
- Aravind C Appaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component including a short-circuit structure
- Patent number 9,876,004
- Issue date Jan 23, 2018
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On-SOI integrated circuit equipped with a device for protecting aga...
- Patent number 9,666,577
- Issue date May 30, 2017
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Yohann Solaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar SCR
- Patent number 9,633,993
- Issue date Apr 25, 2017
- Texas Instruments Incorporated
- Aravind C Appaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-coupled thyristor SRAM semiconductor structures and methods o...
- Patent number 9,613,968
- Issue date Apr 4, 2017
- Kilopass Technology, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-transistor SRAM semiconductor structure and methods of fabrication
- Patent number 9,564,441
- Issue date Feb 7, 2017
- Kilopass Technology, Inc.
- Harry Luan
- G11 - INFORMATION STORAGE
Information Patent Grant
Power semiconductor device and corresponding module
- Patent number 9,455,340
- Issue date Sep 27, 2016
- ABB Schweiz AG
- Munaf Rahimo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Robust ESD protection with silicon-controlled rectifier
- Patent number 9,130,008
- Issue date Sep 8, 2015
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HF-controlled bidirectional switch
- Patent number 8,785,970
- Issue date Jul 22, 2014
- STMicroelectronics (Tours) SAS
- Samuel Menard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,619,299
- Issue date Nov 17, 2009
- Sanyo Electric Co., LTD
- Keiji Mita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
C implants for improved SiGe bipolar yield
- Patent number 6,977,398
- Issue date Dec 20, 2005
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral operation bipolar transistor and a corresponding fabricatio...
- Patent number 6,897,545
- Issue date May 24, 2005
- STMicroelectronics S.A.
- Olivier Menut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,734,496
- Issue date May 11, 2004
- Fuji Electric Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,724,040
- Issue date Apr 20, 2004
- Fuji Electric Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-type MIS semiconductor device
- Patent number 6,720,615
- Issue date Apr 13, 2004
- Fuji Electric Co., Ltd.
- Tatsuhiko Fujihira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
C implants for improved SiGe bipolar yield
- Patent number 6,720,590
- Issue date Apr 13, 2004
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF PEAK ON-STATE VOLTAGE REDUCTION FOR SEMICONDUCTOR DEVICE...
- Publication number 20240290828
- Publication date Aug 29, 2024
- Littelfuse Semiconductor (Wuxi) Co., Ltd
- Xingchong Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR BI-DIRECTIONAL TRENCH POWER SWITCHES
- Publication number 20240113210
- Publication date Apr 4, 2024
- IDEAL POWER INC.
- Jiankang BU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL THYRISTOR DEVICE WITH ASYMMETRIC CHARACTERISTICS
- Publication number 20240014302
- Publication date Jan 11, 2024
- Hitachi Energy Switzerland AG
- Jan VOBECKY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS(METAL OXIDE SILICON) CONTROLLED THYRISTOR DEVICE
- Publication number 20230087416
- Publication date Mar 23, 2023
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Kun Sik PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR BI-DIRECTIONAL TRENCH POWER SWITCHES
- Publication number 20230048984
- Publication date Feb 16, 2023
- IDEAL POWER INC.
- Jiankang BU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERA...
- Publication number 20220189946
- Publication date Jun 16, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Akram A. Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Layer Thyristor Random Access Memory with Silicon-Germanium B...
- Publication number 20210233912
- Publication date Jul 29, 2021
- TC Lab, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Layer Thyristor Random Access Memory with Silicon-Germanium B...
- Publication number 20200328214
- Publication date Oct 15, 2020
- TC Lab, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BYPASS THYRISTOR DEVICE WITH GAS EXPANSION CAVITY WITHIN A CONTACT...
- Publication number 20200144141
- Publication date May 7, 2020
- ABB Schweiz AG
- Tobias Wikström
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR AND METHOD OF FABRICATING THE SAME
- Publication number 20200013884
- Publication date Jan 9, 2020
- QUALCOMM Incorporated
- Sinan GOKTEPELI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Layer Thyristor Random Access Memory with Silicon-Germanium B...
- Publication number 20190326294
- Publication date Oct 24, 2019
- TC Lab, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Density Volatile Random Access Memory Cell Array and Methods o...
- Publication number 20190013317
- Publication date Jan 10, 2019
- TC Lab, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERA...
- Publication number 20180350794
- Publication date Dec 6, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Akram A. Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERA...
- Publication number 20180350795
- Publication date Dec 6, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Akram A. Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR SCR
- Publication number 20170287896
- Publication date Oct 5, 2017
- Texas Instruments Incorporated
- Aravind C. Appaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI INTEGRATED CIRCUIT EQUIPPED WITH A DEVICE FOR PROTECTING AGAINS...
- Publication number 20170256531
- Publication date Sep 7, 2017
- Commissariat a I'Energie Atomique et aux Energies Alternatives
- Yohann Solaro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20160204240
- Publication date Jul 14, 2016
- ABB TECHNOLOGY AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cross-Coupled Thyristor SRAM Semiconductor Structures and Methods o...
- Publication number 20160093622
- Publication date Mar 31, 2016
- Kilopass Technology, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Two-Transistor SRAM Semiconductor Structure and Methods of Fabrication
- Publication number 20160093623
- Publication date Mar 31, 2016
- Kilopass Technology, Inc.
- Harry Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device And Corresponding Module
- Publication number 20150380534
- Publication date Dec 31, 2015
- ABB TECHNOLOGY AG
- Munaf RAHIMO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATCH-UP ROBUST SCR-BASED DEVICES
- Publication number 20150340481
- Publication date Nov 26, 2015
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Da-Wei Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERA...
- Publication number 20150294967
- Publication date Oct 15, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Akram A. Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Robust ESD Protection with Silicon-Controlled Rectifier
- Publication number 20150228770
- Publication date Aug 13, 2015
- Taiwan Semiconductor Manufacturing Co. Ltd.
- Chun-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERA...
- Publication number 20140124828
- Publication date May 8, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Akram A. Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATCH-UP ROBUST SCR-BASED DEVICES
- Publication number 20130320398
- Publication date Dec 5, 2013
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Da-Wei Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HF-CONTROLLED BIDIRECTIONAL SWITCH
- Publication number 20110284921
- Publication date Nov 24, 2011
- Samuel Menard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20070123006
- Publication date May 31, 2007
- Keiji Mita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
C implants for improved SiGe bipolar yield
- Publication number 20040188711
- Publication date Sep 30, 2004
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
C implants for improved SiGe bipolar yield
- Publication number 20030136975
- Publication date Jul 24, 2003
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral operation bipolar transistor and a corresponding fabricatio...
- Publication number 20030025125
- Publication date Feb 6, 2003
- STMicroelectronics S.A.
- Olivier Menut
- H01 - BASIC ELECTRIC ELEMENTS

Base regions of thyristors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

System and method for bi-directional trench power switches

ESD protection circuit with isolated SCR for negative voltage opera...

Semiconductor device with bi-directional double-base trench power s...

MOS(metal oxide silicon) controlled thyristor device

Multi-layer thyristor random access memory with silicon-germanium b...

ESD protection circuit with isolated SCR for negative voltage opera...

Bypass thyristor device with gas expansion cavity within a contact...

ESD protection circuit with isolated SCR for negative voltage opera...

Multi-layer thyristor random access memory with silicon-germanium b...

Multi-layer thyristor random access memory with silicon-germanium b...

Bipolar junction transistor and method of fabricating the same

ESD protection circuit with isolated SCR for negative voltage opera...

SOI integrated circuit equipped with a device for protecting agains...

Cross-coupled thyristor SRAM semiconductor structures and methods o...

Bipolar SCR

Semiconductor component including a short-circuit structure

On-SOI integrated circuit equipped with a device for protecting aga...

Bipolar SCR

Cross-coupled thyristor SRAM semiconductor structures and methods o...

Two-transistor SRAM semiconductor structure and methods of fabrication

Power semiconductor device and corresponding module

Robust ESD protection with silicon-controlled rectifier

HF-controlled bidirectional switch

Semiconductor device and method of manufacturing the same

C implants for improved SiGe bipolar yield

Lateral operation bipolar transistor and a corresponding fabricatio...

Semiconductor device

Semiconductor device

Vertical-type MIS semiconductor device

C implants for improved SiGe bipolar yield

Patents Applicationslast 30 patents

METHOD OF PEAK ON-STATE VOLTAGE REDUCTION FOR SEMICONDUCTOR DEVICE...

SYSTEM AND METHOD FOR BI-DIRECTIONAL TRENCH POWER SWITCHES

BIDIRECTIONAL THYRISTOR DEVICE WITH ASYMMETRIC CHARACTERISTICS

MOS(METAL OXIDE SILICON) CONTROLLED THYRISTOR DEVICE

SYSTEM AND METHOD FOR BI-DIRECTIONAL TRENCH POWER SWITCHES

ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERA...

Multi-Layer Thyristor Random Access Memory with Silicon-Germanium B...

Multi-Layer Thyristor Random Access Memory with Silicon-Germanium B...

BYPASS THYRISTOR DEVICE WITH GAS EXPANSION CAVITY WITHIN A CONTACT...

BIPOLAR JUNCTION TRANSISTOR AND METHOD OF FABRICATING THE SAME

Multi-Layer Thyristor Random Access Memory with Silicon-Germanium B...

High-Density Volatile Random Access Memory Cell Array and Methods o...

ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERA...

ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERA...

BIPOLAR SCR

SOI INTEGRATED CIRCUIT EQUIPPED WITH A DEVICE FOR PROTECTING AGAINS...

POWER SEMICONDUCTOR DEVICE

Cross-Coupled Thyristor SRAM Semiconductor Structures and Methods o...

Two-Transistor SRAM Semiconductor Structure and Methods of Fabrication

Power Semiconductor Device And Corresponding Module

LATCH-UP ROBUST SCR-BASED DEVICES

ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERA...

Robust ESD Protection with Silicon-Controlled Rectifier

ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERA...

LATCH-UP ROBUST SCR-BASED DEVICES

HF-CONTROLLED BIDIRECTIONAL SWITCH

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

C implants for improved SiGe bipolar yield

C implants for improved SiGe bipolar yield

Lateral operation bipolar transistor and a corresponding fabricatio...