Binary metal oxides

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H01L45/146

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

Current Industry

H01L45/146Binary metal oxides

Industries

Patents Grantslast 30 patents

Information Patent Grant
Magnesium ion based synaptic device
- Patent number 11,690,304
- Issue date Jun 27, 2023
- International Business Machines Corporation
- Douglas M. Bishop
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for enlarging the memory window and improving data retentio...
- Patent number 11,682,456
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Fu-Chen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Step height mitigation in resistive random access memory structures
- Patent number 11,678,592
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,672,189
- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Electronic synaptic device and method for manufacturing same
- Patent number 11,672,190
- Issue date Jun 6, 2023
- Industry-University Cooperation Foundation Hanyang University
- Tae Whan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,672,131
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Yumin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell and method of forming the same
- Patent number 11,659,779
- Issue date May 23, 2023
- Agency for Science, Technology and Research
- Wen Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memristive device and method based on ion migration over one or mor...
- Patent number 11,657,871
- Issue date May 23, 2023
- AT&T Intellectual Property I, L.P.
- Sheldon Kent Meredith
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Non-volatile memory structure with positioned doping
- Patent number 11,653,580
- Issue date May 16, 2023
- Hefei Reliance Memory Limited
- Zhichao Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Sub-stoichiometric metal-oxide thin films
- Patent number 11,646,199
- Issue date May 9, 2023
- International Business Machines Corporation
- John Rozen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-based resistive memory having a plasma-exposed bottom electrode
- Patent number 11,647,680
- Issue date May 9, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile tunable capacitive processing unit
- Patent number 11,647,684
- Issue date May 9, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-rectifying resistive memory and fabrication method thereof
- Patent number 11,641,787
- Issue date May 2, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Qing Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal programmable conducting bridges between conductive lines
- Patent number 11,640,937
- Issue date May 2, 2023
- Tokyo Electron Limited
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High yield RRAM cell with optimized film scheme
- Patent number 11,637,239
- Issue date Apr 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Trinh Hai Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical nonvolatile memory device including memory cell string
- Patent number 11,631,718
- Issue date Apr 18, 2023
- Samsung Electronics Co., Ltd.
- Jinhong Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
In-memory resistive random access memory XOR logic using compliment...
- Patent number 11,631,809
- Issue date Apr 18, 2023
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random-access memory devices and methods of fabrication
- Patent number 11,621,395
- Issue date Apr 4, 2023
- Intel Corporation
- Nathan Strutt
- G11 - INFORMATION STORAGE
Information Patent Grant
Stackable symmetrical operation memory bit cell structure with bidi...
- Patent number 11,621,297
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Grant
Low current RRAM-based crossbar array circuit implemented with swit...
- Patent number 11,616,196
- Issue date Mar 28, 2023
- TetraMem Inc.
- Minxian Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual oxide analog switch for neuromorphic switching
- Patent number 11,616,195
- Issue date Mar 28, 2023
- Applied Materials, Inc.
- Deepak Kamalanathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device
- Patent number 11,616,197
- Issue date Mar 28, 2023
- Samsung Electronics Co., Ltd.
- Ja Bin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,611,039
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsai-Hao Hung
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable non-volatile memory cell on glass substrate
- Patent number 11,610,103
- Issue date Mar 21, 2023
- eMemory Technology Inc.
- Wein-Town Sun
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Vertical nonvolatile memory device including memory cell string
- Patent number 11,605,428
- Issue date Mar 14, 2023
- Samsung Electronics Co., Ltd.
- Youngjin Cho
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory devices and methods of forming memory devices
- Patent number 11,600,664
- Issue date Mar 7, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lanxiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to produce 3D semiconductor devices and structures with memory
- Patent number 11,600,667
- Issue date Mar 7, 2023
- Monolithic 3D Inc.
- Deepak C. Sekar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor material for resistive random access memory
- Patent number 11,588,102
- Issue date Feb 21, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory with vertical transport transistor
- Patent number 11,588,104
- Issue date Feb 21, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure
- Patent number 11,588,107
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR FABRICATING TH...
- Publication number 20240164224
- Publication date May 16, 2024
- United Microelectronics Corp.
- Kai-Jiun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS-INDUCED FORMING OF OXIDE RRAM
- Publication number 20240155952
- Publication date May 9, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A...
- Publication number 20240112730
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT
- Publication number 20240112731
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- G11 - INFORMATION STORAGE
Information Patent Application
CMOS-COMPATIBLE RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA D...
- Publication number 20240114813
- Publication date Apr 4, 2024
- TetraMem Inc.
- Mingche Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM STRUCTURE AND METHOD OF FABRICATING THE SAME
- Publication number 20240057487
- Publication date Feb 15, 2024
- UNITED MICROELECTRONICS CORP.
- Kai-Jiun Chang
- G11 - INFORMATION STORAGE
Information Patent Application
RRAM WITH HIGH WORK FUNCTION CAP
- Publication number 20240040940
- Publication date Feb 1, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING-FREE RANDOM-ACCESS MEMORY (RRAM) DEVICES
- Publication number 20240023466
- Publication date Jan 18, 2024
- TetraMem Inc.
- Minxian Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240015989
- Publication date Jan 11, 2024
- SK HYNIX INC.
- Jae Hyun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS-COMPATIBLE RRAM DEVICES
- Publication number 20230422641
- Publication date Dec 28, 2023
- TetraMem Inc.
- Minxian Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...
- Publication number 20230413691
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Pin Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND FABRICATION METHOD THE...
- Publication number 20230413698
- Publication date Dec 21, 2023
- UNITED MICROELECTRONICS CORP.
- Wen-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE RESISTIVE RANDOM ACCESS MEMORY CELL
- Publication number 20230397514
- Publication date Dec 7, 2023
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230380192
- Publication date Nov 23, 2023
- SK HYNIX INC.
- Jong Min YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230354724
- Publication date Nov 2, 2023
- United Microelectronics Corp.
- Wen-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230337556
- Publication date Oct 19, 2023
- United Microelectronics Corp.
- Shu-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE DEVICE
- Publication number 20230309428
- Publication date Sep 28, 2023
- KIOXIA Corporation
- Kenji FUKUDA
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE SWITCHING MEMORY CELL
- Publication number 20230301213
- Publication date Sep 21, 2023
- International Business Machines Corporation
- Kangguo Cheng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PROGRAMMABLE INTERPOSER USING RRAM PLATFORM
- Publication number 20230301214
- Publication date Sep 21, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Lup San LEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA DEVICE STRUCTURE
- Publication number 20230292635
- Publication date Sep 14, 2023
- TetraMem Inc.
- Minxian Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICES PERFORMING THRESHOLD SWITCHING
- Publication number 20230292532
- Publication date Sep 14, 2023
- SK HYNIX INC.
- Woo Cheol LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE WITH ULTRA-THIN BARRIER LAYER AND METHODS O...
- Publication number 20230284540
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE RESISTANCE NON-VOLATILE MEMORY
- Publication number 20230284460
- Publication date Sep 7, 2023
- KIOXIA Corporation
- Tomoki CHIBA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20230240161
- Publication date Jul 27, 2023
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL HARD MASK INTEGRATION FOR ACTIVE DEVICE STRUCTURES
- Publication number 20230172081
- Publication date Jun 1, 2023
- International Business Machines Corporation
- Michael Rizzolo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM FILAMENT SPATIAL LOCALIZATION USING A LASER STIMULATION
- Publication number 20230170019
- Publication date Jun 1, 2023
- International Business Machines Corporation
- Franco Stellari
- G11 - INFORMATION STORAGE
Information Patent Application
TOP VIA CONTAINING RANDOM-ACCESS MEMORY CROSS-BAR ARRAY
- Publication number 20230139648
- Publication date May 4, 2023
- International Business Machines Corporation
- Koichi Motoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ReRAM Device and Method for Manufacturing the Same
- Publication number 20230136097
- Publication date May 4, 2023
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Zhi Tian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230135287
- Publication date May 4, 2023
- SK HYNIX INC.
- Jeong Hwan SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY STRUCTURE
- Publication number 20230137853
- Publication date May 4, 2023
- United Microelectronics Corp.
- Zong-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS

Binary metal oxides

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnesium ion based synaptic device

Methods for enlarging the memory window and improving data retentio...

Step height mitigation in resistive random access memory structures

Two-terminal reversibly switchable memory device

Electronic synaptic device and method for manufacturing same

Memory device and method of manufacturing the same

Memory cell and method of forming the same

Memristive device and method based on ion migration over one or mor...

Non-volatile memory structure with positioned doping

Sub-stoichiometric metal-oxide thin films

Oxide-based resistive memory having a plasma-exposed bottom electrode

Nonvolatile tunable capacitive processing unit

Self-rectifying resistive memory and fabrication method thereof

Horizontal programmable conducting bridges between conductive lines

High yield RRAM cell with optimized film scheme

Vertical nonvolatile memory device including memory cell string

In-memory resistive random access memory XOR logic using compliment...

Resistive random-access memory devices and methods of fabrication

Stackable symmetrical operation memory bit cell structure with bidi...

Low current RRAM-based crossbar array circuit implemented with swit...

Dual oxide analog switch for neuromorphic switching

Variable resistance memory device

Resistive random access memory device

One time programmable non-volatile memory cell on glass substrate

Vertical nonvolatile memory device including memory cell string

Memory devices and methods of forming memory devices

Method to produce 3D semiconductor devices and structures with memory

Semiconductor material for resistive random access memory

Resistive memory with vertical transport transistor

Integrated circuit structure

Patents Applicationslast 30 patents

RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR FABRICATING TH...

PROCESS-INDUCED FORMING OF OXIDE RRAM

DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A...

MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT

CMOS-COMPATIBLE RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA D...

RRAM STRUCTURE AND METHOD OF FABRICATING THE SAME

RRAM WITH HIGH WORK FUNCTION CAP

FORMING-FREE RANDOM-ACCESS MEMORY (RRAM) DEVICES

SEMICONDUCTOR DEVICE

CMOS-COMPATIBLE RRAM DEVICES

PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHING DEVICE W...

RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND FABRICATION METHOD THE...

TUNABLE RESISTIVE RANDOM ACCESS MEMORY CELL

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

RESISTIVE MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF

RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

STORAGE DEVICE

RESISTIVE SWITCHING MEMORY CELL

PROGRAMMABLE INTERPOSER USING RRAM PLATFORM

RESISTIVE RANDOM-ACCESS MEMORY DEVICES WITH A VIA DEVICE STRUCTURE

SEMICONDUCTOR DEVICES PERFORMING THRESHOLD SWITCHING

RESISTIVE MEMORY DEVICE WITH ULTRA-THIN BARRIER LAYER AND METHODS O...

VARIABLE RESISTANCE NON-VOLATILE MEMORY

SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF

METAL HARD MASK INTEGRATION FOR ACTIVE DEVICE STRUCTURES

RRAM FILAMENT SPATIAL LOCALIZATION USING A LASER STIMULATION

TOP VIA CONTAINING RANDOM-ACCESS MEMORY CROSS-BAR ARRAY

ReRAM Device and Method for Manufacturing the Same

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

RESISTIVE RANDOM ACCESS MEMORY STRUCTURE