carrying the current to be rectified, amplified or switched

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CPC
H01L29/417

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/417carrying the current to be rectified, amplified or switched

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Buried conductive structure in semiconductor substrate
- Patent number 12,272,621
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kan-Ju Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having adjacent struc...
- Patent number 12,272,737
- Issue date Apr 8, 2025
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D selective material transformation to integrate 2D material elements
- Patent number 12,272,692
- Issue date Apr 8, 2025
- Tokyo Electron Limited
- Mark I. Gardner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor level interconnection methodologies utilizing 3D interco...
- Patent number 12,272,730
- Issue date Apr 8, 2025
- Adeia Semiconductor Inc.
- Javier A. Delacruz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle-of-line interconnect structure and manufacturing method
- Patent number 12,272,731
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming epitaxial source/drain features and semiconducto...
- Patent number 12,272,732
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Hung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having an anchor-shaped backside via
- Patent number 12,272,634
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective and isotropic etch of silicon over silicon-germanium allo...
- Patent number 12,272,558
- Issue date Apr 8, 2025
- Tokyo Electron Limited
- Matthew Flaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric source/drain for backside source contact
- Patent number 12,272,729
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a drain back contact electrode, met...
- Patent number 12,272,743
- Issue date Apr 8, 2025
- GPOWER SEMICONDUCTOR, INC.
- Junfeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor with silicon nanowire channel, display substra...
- Patent number 12,272,754
- Issue date Apr 8, 2025
- BOE Technology Group Co., Ltd.
- Jiayu He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device for source/drain backside contact and method of f...
- Patent number 12,272,733
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Hsiu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming the same
- Patent number 12,272,734
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Shiang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded stressors in epitaxy source/drain regions
- Patent number 12,266,572
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage reduction in gate-all-around devices
- Patent number 12,266,686
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including horizontal gate-all-around (hGAA) n...
- Patent number 12,266,704
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shi Ning Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for forming the same
- Patent number 12,266,701
- Issue date Apr 1, 2025
- United Microelectronics Corp.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric structures for semiconductor device structures
- Patent number 12,266,703
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Che Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device using etchant composi...
- Patent number 12,266,538
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Chien Kuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned interconnect structures and methods of fabrication
- Patent number 12,266,570
- Issue date Apr 1, 2025
- Intel Corporation
- Kimin Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with backside contact
- Patent number 12,266,601
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Ting Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET devices and methods of forming the same
- Patent number 12,266,654
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage-controlled switching device with resistive path
- Patent number 12,266,680
- Issue date Apr 1, 2025
- Infineon Technologies Dresden GmbH & Co. KG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with source/drain contact formed using bottom-...
- Patent number 12,266,688
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor nanostructures device structure with backside contact
- Patent number 12,266,700
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device including etch stop pattern and method of forming the...
- Patent number 12,268,007
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective dual silicide formation using a maskless fabrication proc...
- Patent number 12,266,709
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal A. Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide thin film transistor, method for preparing same, and display...
- Patent number 12,261,225
- Issue date Mar 25, 2025
- FUZHOU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Bin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor, display substrate and display device with red...
- Patent number 12,261,227
- Issue date Mar 25, 2025
- ORDOS YUANSHENG OPTOELECTRONICS CO., LTD.
- Chenglong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 12,261,208
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Yonghee Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR PACKAGE
- Publication number 20250072020
- Publication date Feb 27, 2025
- Rohm Co., Ltd.
- Akira SAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250072048
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Youngjin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED BODY TIED TO SOURCE LOW NOISE AMPLIFIER DEVICE
- Publication number 20250072059
- Publication date Feb 27, 2025
- QUALCOMM Incorporated
- Ravi Pramod Kumar VEDULA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250070063
- Publication date Feb 27, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Hironao NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE STRUCTURE WITH EXTRA FIN
- Publication number 20250072038
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Hong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE ISOLATION OF CONTACT AND SOURCE/DRAIN STRUCTURES
- Publication number 20250072049
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Szu-Chien WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FINGER TRANSISTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250072092
- Publication date Feb 27, 2025
- UNITED MICROELECTRONICS CORP.
- Su Xing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED RESIDUE AT ETCHED STRUCTURE SIDEWALLS
- Publication number 20250072099
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES
- Publication number 20250072041
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Sungmin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MOSFET and manufacturing method thereof
- Publication number 20250072047
- Publication date Feb 27, 2025
- Hangzhou Silicon-Magic Semiconductor Technology Co.,Ltd
- Yanggang OU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND ASSOCIATED METHODS
- Publication number 20250072085
- Publication date Feb 27, 2025
- NEXPERIA B.V.
- Chih-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINAL STRUCTURE WITH OPTIMIZED RELIABILITY FOR POWER DEVICE, PRE...
- Publication number 20250072095
- Publication date Feb 27, 2025
- Huahong ZealCore Electronics Technology Co.,Ltd
- Yimin WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20250072078
- Publication date Feb 27, 2025
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL STRUCTURE-BASED FIELD EFFECT TRANSISTOR (FET) INPUT/OUTPUT...
- Publication number 20250072105
- Publication date Feb 27, 2025
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...
- Publication number 20250072106
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Jisoo PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250072066
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Wooseok PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250072087
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Kyungwook PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE
- Publication number 20250072032
- Publication date Feb 27, 2025
- Industrial Technology Research Institute
- Shin-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250072034
- Publication date Feb 27, 2025
- ROHM CO., LTD.
- Yosuke HATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILTER FINS IN A GATE CONNECTOR REGION BETWEEN TRANSISTORS FOR SIGN...
- Publication number 20250072039
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Hong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250072058
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jer-Fu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE HAVING BACKSIDE POWER VIAS
- Publication number 20250069991
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ping-Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20250063799
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Ju Hun PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20250063771
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20250063755
- Publication date Feb 20, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY SILICON CARBIDE JUNCTION GATE FIELD EFFECT TRANSISTOR DEV...
- Publication number 20250063760
- Publication date Feb 20, 2025
- SUZHOU WATECH ELECTRONICS CO., LTD.
- Changchang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE STRUCTURES AND METHODS OF FORMATION
- Publication number 20250063758
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250063763
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Won Keun CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL TRAPPED METAL CONTACT FOR STACKED FET
- Publication number 20250063795
- Publication date Feb 20, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION MODULE FOR BACKSIDE POWER DELIVERY
- Publication number 20250063797
- Publication date Feb 20, 2025
- Applied Materials, Inc.
- Kyoung Ha KIM
- H01 - BASIC ELECTRIC ELEMENTS

carrying the current to be rectified, amplified or switched

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Buried conductive structure in semiconductor substrate

Gate-all-around integrated circuit structures having adjacent struc...

3D selective material transformation to integrate 2D material elements

Transistor level interconnection methodologies utilizing 3D interco...

Middle-of-line interconnect structure and manufacturing method

Method for forming epitaxial source/drain features and semiconducto...

Semiconductor structure having an anchor-shaped backside via

Selective and isotropic etch of silicon over silicon-germanium allo...

Asymmetric source/drain for backside source contact

Semiconductor device comprising a drain back contact electrode, met...

Thin film transistor with silicon nanowire channel, display substra...

Transistor device for source/drain backside contact and method of f...

Semiconductor device and method for forming the same

Embedded stressors in epitaxy source/drain regions

Leakage reduction in gate-all-around devices

Semiconductor devices including horizontal gate-all-around (hGAA) n...

High electron mobility transistor and method for forming the same

Dielectric structures for semiconductor device structures

Method for manufacturing semiconductor device using etchant composi...

Self-aligned interconnect structures and methods of fabrication

Semiconductor device structure with backside contact

FinFET devices and methods of forming the same

Voltage-controlled switching device with resistive path

Semiconductor device with source/drain contact formed using bottom-...

Semiconductor nanostructures device structure with backside contact

Memory device including etch stop pattern and method of forming the...

Selective dual silicide formation using a maskless fabrication proc...

Oxide thin film transistor, method for preparing same, and display...

Thin film transistor, display substrate and display device with red...

Integrated circuit device

Patents Applicationslast 30 patents

SEMICONDUCTOR PACKAGE

SEMICONDUCTOR DEVICE

ENHANCED BODY TIED TO SOURCE LOW NOISE AMPLIFIER DEVICE

SEMICONDUCTOR DEVICE

FINFET DEVICE STRUCTURE WITH EXTRA FIN

SEMICONDUCTOR DEVICE ISOLATION OF CONTACT AND SOURCE/DRAIN STRUCTURES

MULTI-FINGER TRANSISTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

REDUCED RESIDUE AT ETCHED STRUCTURE SIDEWALLS

INTEGRATED CIRCUIT DEVICES

Trench MOSFET and manufacturing method thereof

POWER SEMICONDUCTOR DEVICE AND ASSOCIATED METHODS

TERMINAL STRUCTURE WITH OPTIMIZED RELIABILITY FOR POWER DEVICE, PRE...

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

VERTICAL STRUCTURE-BASED FIELD EFFECT TRANSISTOR (FET) INPUT/OUTPUT...

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR POWER DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FILTER FINS IN A GATE CONNECTOR REGION BETWEEN TRANSISTORS FOR SIGN...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

MEMORY DEVICE HAVING BACKSIDE POWER VIAS

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

LATERALLY SILICON CARBIDE JUNCTION GATE FIELD EFFECT TRANSISTOR DEV...

CONDUCTIVE STRUCTURES AND METHODS OF FORMATION

SEMICONDUCTOR DEVICE

LOCAL TRAPPED METAL CONTACT FOR STACKED FET

ISOLATION MODULE FOR BACKSIDE POWER DELIVERY