carrying the current to be rectified, amplified or switched

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CPC
H01L29/417

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/417carrying the current to be rectified, amplified or switched

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Fin field effect transistor devices including NMOS device and PMOS...
- Patent number 12,170,332
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yuan-Sheng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin transistors and manufacturing method...
- Patent number 12,170,282
- Issue date Dec 17, 2024
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive structures and methods of formation
- Patent number 12,170,331
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices having uniformly formed structure
- Patent number 12,170,333
- Issue date Dec 17, 2024
- Samsung Electronics Co., Ltd.
- Sungmin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,170,320
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Chia Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device with element isolation area
- Patent number 12,170,316
- Issue date Dec 17, 2024
- Kabushika Kaisha Toshiba
- Akira Yoshioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual contact process with stacked metal layers
- Patent number 12,170,319
- Issue date Dec 17, 2024
- Intel Corporation
- Kevin Cook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,165,929
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench field effect transistor structure comprising epitaxial layer...
- Patent number 12,166,109
- Issue date Dec 10, 2024
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Xin Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with backside power rail and method for formin...
- Patent number 12,165,973
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Chung Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,165,957
- Issue date Dec 10, 2024
- Rohm Co., Ltd.
- Minoru Akutsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor structure and manufacturing method
- Patent number 12,166,070
- Issue date Dec 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Jifeng Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain contact structure
- Patent number 12,166,088
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ting Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,166,095
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 12,166,116
- Issue date Dec 10, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Hao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microelectronic devices with active source/drain contacts in trench...
- Patent number 12,166,094
- Issue date Dec 10, 2024
- Micron Technology, Inc.
- Lifang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,166,102
- Issue date Dec 10, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ronghui Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with metal gate stacks
- Patent number 12,166,105
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Hsuan Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet channel-to-source and drain isolation
- Patent number 12,166,110
- Issue date Dec 10, 2024
- Adeia Semiconductor Solutions LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
2D channel transistors with low contact resistance
- Patent number 12,166,079
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device-including source and drain regions and superla...
- Patent number 12,166,081
- Issue date Dec 10, 2024
- Samsung Electronics Co., Ltd.
- Ilgyou Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method for forming the same
- Patent number 12,165,947
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Sheh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,165,998
- Issue date Dec 10, 2024
- Fuji Electric Co., Ltd.
- Tohru Shirakawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including epitaxial patterns with plurality o...
- Patent number 12,166,093
- Issue date Dec 10, 2024
- Samsung Electronics Co., Ltd.
- Sun Ki Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 12,166,119
- Issue date Dec 10, 2024
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming source/drain contacts utilizing an inhibitor
- Patent number 12,166,092
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lin-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for power amplification
- Patent number 12,166,103
- Issue date Dec 10, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 12,166,113
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor including active contact buried portions
- Patent number 12,159,911
- Issue date Dec 3, 2024
- Samsung Electronics Co., Ltd.
- Gyeom Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 12,159,926
- Issue date Dec 3, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Source/Drain Contacts and Methods for Forming the Same
- Publication number 20240421200
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240421205
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE FOR BACKSIDE SIGNAL AND POWER
- Publication number 20240421087
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH BOTTOM DIELECTRIC ISOLATION AND FULLY SELF-ALIGNED...
- Publication number 20240421035
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Nicolas Jean Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20240421070
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Sunjung LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240421161
- Publication date Dec 19, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240421203
- Publication date Dec 19, 2024
- ROHM CO., LTD.
- Shojiro KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240421206
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Seonkyu Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...
- Publication number 20240421214
- Publication date Dec 19, 2024
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISPLAY DEVICE
- Publication number 20240421159
- Publication date Dec 19, 2024
- Japan Display Inc.
- Isao SUZUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONNECTION OVER DISCONNECTED EPITAXIAL STRUCTURE USING DIREC...
- Publication number 20240421201
- Publication date Dec 19, 2024
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Performance LDMOS Structures
- Publication number 20240421225
- Publication date Dec 19, 2024
- MURATA MANUFACTURING CO., LTD.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTED GATE CUT REGION
- Publication number 20240420960
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240420967
- Publication date Dec 19, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FEEDTHROUGH VIA BETWEEN ACTIVE REGIONS
- Publication number 20240421202
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLACEHOLDER WITH DIELECTRIC LINER PROTECTION TO PREVENT DIRECT BACK...
- Publication number 20240421085
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240421082
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Jeon Won Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN PROTECTION USING A BACKSIDE PLACEHOLDER
- Publication number 20240421037
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Lijuan Zou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING MG CONTACTS COUPLED BY MP CONTACT AND METHOD OF MANUF...
- Publication number 20240421187
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240421199
- Publication date Dec 19, 2024
- ROHM CO., LTD.
- Masaki NAGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240413204
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Jeewoong KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR
- Publication number 20240413227
- Publication date Dec 12, 2024
- Nippon Telegraph and Telephone Corporation
- Takuya Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH A CURRENT GAIN LAYOUT
- Publication number 20240413195
- Publication date Dec 12, 2024
- Micron Technology, Inc.
- Takashi Ishihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING TH...
- Publication number 20240413248
- Publication date Dec 12, 2024
- SAMSUNG DISPLAY CO., LTD.
- Yong Su LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CFETS AND THE METHODS OF FORMING THE SAME
- Publication number 20240413019
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ting-Yun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413216
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Doohyun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP-AROUND SOURCE/DRAIN METHOD OF MAKING CONTACTS FOR BACKSIDE METALS
- Publication number 20240413237
- Publication date Dec 12, 2024
- Intel Corporation
- Patrick MORROW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC FEATURES FOR PARASITIC CAPACITANCE REDUCTION
- Publication number 20240413244
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FETs WITH BACKSIDE ANGLE CUT
- Publication number 20240413084
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413203
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Chang Min YOE
- H01 - BASIC ELECTRIC ELEMENTS

carrying the current to be rectified, amplified or switched

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Fin field effect transistor devices including NMOS device and PMOS...

Semiconductor device with fin transistors and manufacturing method...

Conductive structures and methods of formation

Integrated circuit devices having uniformly formed structure

Semiconductor device and method of manufacture

Nitride semiconductor device with element isolation area

Dual contact process with stacked metal layers

Semiconductor device and method

Trench field effect transistor structure comprising epitaxial layer...

Semiconductor device with backside power rail and method for formin...

Semiconductor device

Semiconductor transistor structure and manufacturing method

Source/drain contact structure

Semiconductor device and method

Semiconductor device and fabrication method thereof

Microelectronic devices with active source/drain contacts in trench...

Semiconductor device and method for manufacturing the same

Semiconductor device structure with metal gate stacks

Nanosheet channel-to-source and drain isolation

2D channel transistors with low contact resistance

Semiconductor device-including source and drain regions and superla...

Semiconductor devices and method for forming the same

Semiconductor device

Semiconductor devices including epitaxial patterns with plurality o...

Gallium nitride transistor with a doped region

Method for forming source/drain contacts utilizing an inhibitor

Semiconductor device for power amplification

Semiconductor device and method of fabricating the same

Semiconductor including active contact buried portions

Lateral bipolar transistor

Patents Applicationslast 30 patents

Source/Drain Contacts and Methods for Forming the Same

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

STRUCTURE FOR BACKSIDE SIGNAL AND POWER

TRANSISTORS WITH BOTTOM DIELECTRIC ISOLATION AND FULLY SELF-ALIGNED...

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...

DISPLAY DEVICE

TRENCH CONNECTION OVER DISCONNECTED EPITAXIAL STRUCTURE USING DIREC...

High-Performance LDMOS Structures

INVERTED GATE CUT REGION

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

FEEDTHROUGH VIA BETWEEN ACTIVE REGIONS

PLACEHOLDER WITH DIELECTRIC LINER PROTECTION TO PREVENT DIRECT BACK...

SEMICONDUCTOR DEVICE

SOURCE/DRAIN PROTECTION USING A BACKSIDE PLACEHOLDER

DEVICE HAVING MG CONTACTS COUPLED BY MP CONTACT AND METHOD OF MANUF...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES

BIPOLAR TRANSISTOR

SEMICONDUCTOR DEVICES WITH A CURRENT GAIN LAYOUT

THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING TH...

CFETS AND THE METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE

WRAP-AROUND SOURCE/DRAIN METHOD OF MAKING CONTACTS FOR BACKSIDE METALS

DIELECTRIC FEATURES FOR PARASITIC CAPACITANCE REDUCTION

STACKED FETs WITH BACKSIDE ANGLE CUT

SEMICONDUCTOR DEVICE