carrying the current to be rectified, amplified or switched

Industry

CPC
H01L29/417

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/417carrying the current to be rectified, amplified or switched

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Contact structures in semiconductor devices
- Patent number 12,315,863
- Issue date May 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multigate device with air gap spacer and backside rail contact and...
- Patent number 12,300,731
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Guan-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor devices
- Patent number 12,300,724
- Issue date May 13, 2025
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,300,751
- Issue date May 13, 2025
- Samsung Electronics Co., Ltd.
- Junggil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process and structure for source/drain contacts
- Patent number 12,300,727
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Huan Jao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistant contact method and structure
- Patent number 12,300,729
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 12,300,744
- Issue date May 13, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,300,728
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive feature of semiconductor device and method of forming same
- Patent number 12,300,540
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 12,294,021
- Issue date May 6, 2025
- Kioxia Corporation
- Tomonori Kajino
- G11 - INFORMATION STORAGE
Information Patent Grant
High electron mobility transistor with improved barrier layer
- Patent number 12,294,026
- Issue date May 6, 2025
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface oxidation control of metal gates using capping layer
- Patent number 12,293,916
- Issue date May 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Pei-Yu Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gap patterning for metal-to-source/drain plugs in a semiconductor d...
- Patent number 12,293,947
- Issue date May 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio source or drain structures with abrupt dopant pro...
- Patent number 12,288,808
- Issue date Apr 29, 2025
- Intel Corporation
- Ryan Keech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with source/drain contact
- Patent number 12,288,822
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Che Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,288,715
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Hua Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit chip including gate electrode with oblique cut s...
- Patent number 12,288,749
- Issue date Apr 29, 2025
- Samsung Electronics Co., Ltd.
- Inyeal Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cell layouts
- Patent number 12,288,782
- Issue date Apr 29, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Juhan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside contact structures and fabrication for metal on both sides...
- Patent number 12,288,810
- Issue date Apr 29, 2025
- Intel Corporation
- Patrick Morrow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with doped structure
- Patent number 12,288,809
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Miao-Syuan Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor device structures
- Patent number 12,283,527
- Issue date Apr 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect features with sharp corners and method forming same
- Patent number 12,283,617
- Issue date Apr 22, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tze-Liang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a transistor with trenches and mesas
- Patent number 12,283,621
- Issue date Apr 22, 2025
- Infineon Technologies Austria AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,283,614
- Issue date Apr 22, 2025
- Kabushiki Kaisha Toshiba
- Shinji Onduka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner spacer for semiconductor device
- Patent number 12,283,618
- Issue date Apr 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Ting Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming spacers for semiconductor devices including back...
- Patent number 12,283,521
- Issue date Apr 22, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 12,283,608
- Issue date Apr 22, 2025
- Fuji Electric Co., Ltd.
- Tetsutaro Imagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multiple electrodes and an insulation film
- Patent number 12,283,615
- Issue date Apr 22, 2025
- Kabushiki Kaisha Toshiba
- Hiroki Hatada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked FETS with non-shared work function metals
- Patent number 12,278,237
- Issue date Apr 15, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,278,279
- Issue date Apr 15, 2025
- Kabushiki Kaisha Toshiba
- Takahiro Kato
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR PACKAGE
- Publication number 20250072020
- Publication date Feb 27, 2025
- Rohm Co., Ltd.
- Akira SAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250072048
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Youngjin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED BODY TIED TO SOURCE LOW NOISE AMPLIFIER DEVICE
- Publication number 20250072059
- Publication date Feb 27, 2025
- QUALCOMM Incorporated
- Ravi Pramod Kumar VEDULA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250070063
- Publication date Feb 27, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Hironao NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE STRUCTURE WITH EXTRA FIN
- Publication number 20250072038
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Hong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE ISOLATION OF CONTACT AND SOURCE/DRAIN STRUCTURES
- Publication number 20250072049
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Szu-Chien WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FINGER TRANSISTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250072092
- Publication date Feb 27, 2025
- UNITED MICROELECTRONICS CORP.
- Su Xing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED RESIDUE AT ETCHED STRUCTURE SIDEWALLS
- Publication number 20250072099
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES
- Publication number 20250072041
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Sungmin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MOSFET and manufacturing method thereof
- Publication number 20250072047
- Publication date Feb 27, 2025
- Hangzhou Silicon-Magic Semiconductor Technology Co.,Ltd
- Yanggang OU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND ASSOCIATED METHODS
- Publication number 20250072085
- Publication date Feb 27, 2025
- NEXPERIA B.V.
- Chih-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINAL STRUCTURE WITH OPTIMIZED RELIABILITY FOR POWER DEVICE, PRE...
- Publication number 20250072095
- Publication date Feb 27, 2025
- Huahong ZealCore Electronics Technology Co.,Ltd
- Yimin WAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20250072078
- Publication date Feb 27, 2025
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL STRUCTURE-BASED FIELD EFFECT TRANSISTOR (FET) INPUT/OUTPUT...
- Publication number 20250072105
- Publication date Feb 27, 2025
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...
- Publication number 20250072106
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Jisoo PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE HAVING BACKSIDE POWER VIAS
- Publication number 20250069991
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ping-Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250072066
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Wooseok PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250072087
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Kyungwook PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE
- Publication number 20250072032
- Publication date Feb 27, 2025
- Industrial Technology Research Institute
- Shin-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250072034
- Publication date Feb 27, 2025
- ROHM CO., LTD.
- Yosuke HATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILTER FINS IN A GATE CONNECTOR REGION BETWEEN TRANSISTORS FOR SIGN...
- Publication number 20250072039
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Hong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250072058
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jer-Fu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20250063799
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Ju Hun PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20250063771
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20250063755
- Publication date Feb 20, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY SILICON CARBIDE JUNCTION GATE FIELD EFFECT TRANSISTOR DEV...
- Publication number 20250063760
- Publication date Feb 20, 2025
- SUZHOU WATECH ELECTRONICS CO., LTD.
- Changchang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250063763
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Won Keun CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL TRAPPED METAL CONTACT FOR STACKED FET
- Publication number 20250063795
- Publication date Feb 20, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION MODULE FOR BACKSIDE POWER DELIVERY
- Publication number 20250063797
- Publication date Feb 20, 2025
- Applied Materials, Inc.
- Kyoung Ha KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Structures for Dual-Thickness Active Area SOI FETS
- Publication number 20250063822
- Publication date Feb 20, 2025
- pSemi Corporation
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS

carrying the current to be rectified, amplified or switched

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Contact structures in semiconductor devices

Multigate device with air gap spacer and backside rail contact and...

Method of manufacturing silicon carbide semiconductor devices

Semiconductor device

Process and structure for source/drain contacts

Low resistant contact method and structure

Semiconductor structure and manufacturing method thereof

Semiconductor devices

Conductive feature of semiconductor device and method of forming same

Semiconductor memory device

High electron mobility transistor with improved barrier layer

Surface oxidation control of metal gates using capping layer

Gap patterning for metal-to-source/drain plugs in a semiconductor d...

High aspect ratio source or drain structures with abrupt dopant pro...

Semiconductor device with source/drain contact

Semiconductor device and manufacturing method thereof

Integrated circuit chip including gate electrode with oblique cut s...

Cell layouts

Backside contact structures and fabrication for metal on both sides...

Semiconductor device with doped structure

Methods of forming semiconductor device structures

Interconnect features with sharp corners and method forming same

Semiconductor device having a transistor with trenches and mesas

Semiconductor device

Inner spacer for semiconductor device

Methods of forming spacers for semiconductor devices including back...

Semiconductor device and manufacturing method of the same

Semiconductor device with multiple electrodes and an insulation film

Stacked FETS with non-shared work function metals

Semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR PACKAGE

SEMICONDUCTOR DEVICE

ENHANCED BODY TIED TO SOURCE LOW NOISE AMPLIFIER DEVICE

SEMICONDUCTOR DEVICE

FINFET DEVICE STRUCTURE WITH EXTRA FIN

SEMICONDUCTOR DEVICE ISOLATION OF CONTACT AND SOURCE/DRAIN STRUCTURES

MULTI-FINGER TRANSISTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

REDUCED RESIDUE AT ETCHED STRUCTURE SIDEWALLS

INTEGRATED CIRCUIT DEVICES

Trench MOSFET and manufacturing method thereof

POWER SEMICONDUCTOR DEVICE AND ASSOCIATED METHODS

TERMINAL STRUCTURE WITH OPTIMIZED RELIABILITY FOR POWER DEVICE, PRE...

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

VERTICAL STRUCTURE-BASED FIELD EFFECT TRANSISTOR (FET) INPUT/OUTPUT...

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...

MEMORY DEVICE HAVING BACKSIDE POWER VIAS

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR POWER DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FILTER FINS IN A GATE CONNECTOR REGION BETWEEN TRANSISTORS FOR SIGN...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

LATERALLY SILICON CARBIDE JUNCTION GATE FIELD EFFECT TRANSISTOR DEV...

SEMICONDUCTOR DEVICE

LOCAL TRAPPED METAL CONTACT FOR STACKED FET

ISOLATION MODULE FOR BACKSIDE POWER DELIVERY

Contact Structures for Dual-Thickness Active Area SOI FETS