carrying the current to be rectified, amplified or switched

Industry

CPC
H01L29/417

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/417carrying the current to be rectified, amplified or switched

Industries

Patents Grantslast 30 patents

Information Patent Grant
Device contacts in integrated circuit structures
- Patent number 11,973,121
- Issue date Apr 30, 2024
- Intel Corporation
- Guillaume Bouche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with source/drain structure having modified...
- Patent number 11,973,127
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unlanded thermal dissipation pillar adjacent active contact
- Patent number 11,972,999
- Issue date Apr 30, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Mark D. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,974,428
- Issue date Apr 30, 2024
- Winbond Electronics Corp.
- Che-Fu Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Miniaturized transistor structure with controlled dimensions of sou...
- Patent number 11,973,120
- Issue date Apr 30, 2024
- Etron Technology, Inc.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,973,117
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective formation of titanium silicide and titanium nitride by hy...
- Patent number 11,972,951
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano-FET semiconductor device and method of forming
- Patent number 11,973,122
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- I-Hsieh Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,973,016
- Issue date Apr 30, 2024
- Infineon Technologies Austria AG
- Elvir Kahrimanovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of a semiconductor de...
- Patent number 11,974,435
- Issue date Apr 30, 2024
- SK hynix Inc.
- In Su Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and forming method therefor
- Patent number 11,967,571
- Issue date Apr 23, 2024
- Fujian Jinhua Integrated Circuit Co., Ltd.
- Yi-Wang Jhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide band gap semiconductor device with surface insulating film
- Patent number 11,967,627
- Issue date Apr 23, 2024
- ROHM Co, Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor memory devices
- Patent number 11,968,836
- Issue date Apr 23, 2024
- Samsung Electronics Co., Ltd.
- Younghwan Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inter block for recessed contacts and methods forming same
- Patent number 11,967,622
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Te-Chih Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,967,624
- Issue date Apr 23, 2024
- Hitachi, Ltd.
- Naoki Tega
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain contact having a protruding segment
- Patent number 11,968,817
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jui-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 11,967,613
- Issue date Apr 23, 2024
- WIN SEMICONDUCTORS CORP.
- Ju-Hsien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide-sandwiched source/drain region and method of fabricating same
- Patent number 11,967,621
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Hui Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor, method of manufacturing the same and display...
- Patent number 11,967,620
- Issue date Apr 23, 2024
- BOE Technology Group Co., Ltd.
- Pan Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor structure, display panel and display device
- Patent number 11,967,646
- Issue date Apr 23, 2024
- HKC CORPORATION LIMITED
- Keming Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for highly scaled transistors
- Patent number 11,961,892
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multichannel heterostructure and manufact...
- Patent number 11,961,902
- Issue date Apr 16, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Anbang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,961,889
- Issue date Apr 16, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 11,961,916
- Issue date Apr 16, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Tatsuya Onuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising stacked transistors
- Patent number 11,961,917
- Issue date Apr 16, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Kazuya Hanaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back-end active device, semiconductor device and semiconductor chip
- Patent number 11,963,365
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yun-Feng Kao
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual metal silicide structures for advanced integrated circuit stru...
- Patent number 11,961,767
- Issue date Apr 16, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor usage metering through bias temperature instability moni...
- Patent number 11,961,835
- Issue date Apr 16, 2024
- International Business Machines Corporation
- Effendi Leobandung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having nanosheet transistor and methods of fab...
- Patent number 11,961,887
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Wen Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitance reduction for back-side power rail device
- Patent number 11,961,915
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shi Ning Ju
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240145465
- Publication date May 2, 2024
- Fuji Electric Co., Ltd.
- Shigeki SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240145575
- Publication date May 2, 2024
- National Yang Ming Chiao Tung University
- Edward Yi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MOSFET DEVICE, MANUFACTURING METHOD AND APPLICATION THEREOF
- Publication number 20240145591
- Publication date May 2, 2024
- Beijing Superstring Academy of Memory Technology
- Zhuo CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH LOW RESISTANCE CONTACT
- Publication number 20240145555
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Heng Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240145556
- Publication date May 2, 2024
- Samsung Electronics Co., Ltd.
- Gukhee Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED SOURCE-DRAIN-GATE CONNECTION AND PROCESS FOR FORMING SUCH
- Publication number 20240145557
- Publication date May 2, 2024
- Intel Corporation
- Ehren MANNEBACH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITANCE REDUCTION FOR BACKSIDE POWER RAIL DEVICE
- Publication number 20240145562
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Zhen YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240145569
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yee-Chia YEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
- Publication number 20240145485
- Publication date May 2, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Hajime Kimura
- G11 - INFORMATION STORAGE
Information Patent Application
FLUORINE-FREE INTERFACE FOR SEMICONDUCTOR DEVICE PERFORMANCE GAIN
- Publication number 20240145561
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Ting TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD EFFECT TRANSISTOR STRUCTURE WITH INDEPENDENT GATE CON...
- Publication number 20240145473
- Publication date May 2, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240145474
- Publication date May 2, 2024
- Samsung Electronics Co., Ltd.
- Kyung ho KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240145304
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240145544
- Publication date May 2, 2024
- Samsung Electronics Co., Ltd.
- Kyungho Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240145559
- Publication date May 2, 2024
- Industrial Technology Research Institute
- Chang-Yan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240145560
- Publication date May 2, 2024
- Samsung Electronics Co., Ltd.
- Dong Hoon HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING OXIDE FILM AND METHOD...
- Publication number 20240145600
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Chih WEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODE STRUCTURE FOR VERTICAL GROUP III-V DEVICE
- Publication number 20240145554
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yao-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240145558
- Publication date May 2, 2024
- Kabushiki Kaisha Toshiba
- Shinji Onduka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A FINFET BY IMPLANTING A DIELECTRIC WITH A...
- Publication number 20240145596
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF FORMING THE SAME
- Publication number 20240136348
- Publication date Apr 25, 2024
- PANJIT INTERNATIONAL INC.
- YIJYUN KE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION
- Publication number 20240136357
- Publication date Apr 25, 2024
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240136418
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240136439
- Publication date Apr 25, 2024
- Mitsubishi Electric Corporation
- Yuki TAKIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Flash Memory Device with Three-Dimensional Half Structure and Metho...
- Publication number 20240136444
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Yu-Chu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240138136
- Publication date Apr 25, 2024
- Samsung Electronics Co., Ltd.
- Jeewoong KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240136290
- Publication date Apr 25, 2024
- Samsung Electronics Co., Ltd.
- Jee Woong KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Transistor and Manufacturing Method Therefor
- Publication number 20240136412
- Publication date Apr 25, 2024
- Nippon Telegraph and Telephone Corporation
- Takuya Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY
- Publication number 20240136414
- Publication date Apr 25, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER TRANSISTOR
- Publication number 20240136433
- Publication date Apr 25, 2024
- STMicroelectronics (Rousset) SAS
- Loic BOURGUINE
- H01 - BASIC ELECTRIC ELEMENTS

carrying the current to be rectified, amplified or switched

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Device contacts in integrated circuit structures

Semiconductor structure with source/drain structure having modified...

Unlanded thermal dissipation pillar adjacent active contact

Memory device and method of manufacturing the same

Miniaturized transistor structure with controlled dimensions of sou...

Semiconductor device

Selective formation of titanium silicide and titanium nitride by hy...

Nano-FET semiconductor device and method of forming

Semiconductor device

Semiconductor device and manufacturing method of a semiconductor de...

Semiconductor structure and forming method therefor

Wide band gap semiconductor device with surface insulating film

Three-dimensional semiconductor memory devices

Inter block for recessed contacts and methods forming same

Semiconductor device

Source/drain contact having a protruding segment

Semiconductor structure

Silicide-sandwiched source/drain region and method of fabricating same

Thin film transistor, method of manufacturing the same and display...

Thin film transistor structure, display panel and display device

Contacts for highly scaled transistors

Semiconductor device with multichannel heterostructure and manufact...

Semiconductor device and method of fabricating the same

Memory device

Semiconductor device comprising stacked transistors

Back-end active device, semiconductor device and semiconductor chip

Dual metal silicide structures for advanced integrated circuit stru...

Transistor usage metering through bias temperature instability moni...

Semiconductor device having nanosheet transistor and methods of fab...

Capacitance reduction for back-side power rail device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

VERTICAL MOSFET DEVICE, MANUFACTURING METHOD AND APPLICATION THEREOF

TRANSISTOR STRUCTURE WITH LOW RESISTANCE CONTACT

SEMICONDUCTOR DEVICE

STACKED SOURCE-DRAIN-GATE CONNECTION AND PROCESS FOR FORMING SUCH

CAPACITANCE REDUCTION FOR BACKSIDE POWER RAIL DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND DISPLAY DEVICE

FLUORINE-FREE INTERFACE FOR SEMICONDUCTOR DEVICE PERFORMANCE GAIN

STACKED FIELD EFFECT TRANSISTOR STRUCTURE WITH INDEPENDENT GATE CON...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

INTERCONNECT STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE

TRANSISTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING OXIDE FILM AND METHOD...

ELECTRODE STRUCTURE FOR VERTICAL GROUP III-V DEVICE

SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING A FINFET BY IMPLANTING A DIELECTRIC WITH A...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF FORMING THE SAME

OPTIMIZATION OF VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR INTEGRATION

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Flash Memory Device with Three-Dimensional Half Structure and Metho...

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Field-Effect Transistor and Manufacturing Method Therefor

SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY

POWER TRANSISTOR