characterised by the angle between the ion beam and the crystal planes or the main crystal surface

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H01L21/047

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/047characterised by the angle between the ion beam and the crystal planes or the main crystal surface

Industries

Patents Grantslast 30 patents

Information Patent Grant
Ion beam implantation method and semiconductor device
- Patent number 11,908,694
- Issue date Feb 20, 2024
- Infineon Technologies AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Separation method of wafer
- Patent number 11,901,231
- Issue date Feb 13, 2024
- Disco Corporation
- Asahi Nomoto
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
And manufacture of self-aligned power devices
- Patent number 11,901,432
- Issue date Feb 13, 2024
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide MOSFET device and manufacturing method thereof
- Patent number 11,894,440
- Issue date Feb 6, 2024
- HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device
- Patent number 11,888,024
- Issue date Jan 30, 2024
- Infineon Technologies AG
- Reinhard Ploss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single sided channel mesa power junction field effect transistor
- Patent number 11,869,982
- Issue date Jan 9, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing same
- Patent number 11,848,358
- Issue date Dec 19, 2023
- Mitsubishi Electric Corporation
- Rina Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation method and ion implanter
- Patent number 11,830,703
- Issue date Nov 28, 2023
- SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO, LTD.
- Yoji Kawasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate processing methods
- Patent number 11,823,953
- Issue date Nov 21, 2023
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Michael J. Seddon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channeled implants for SiC MOSFET fabrication
- Patent number 11,804,537
- Issue date Oct 31, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate semiconductor device and method of manufacturing the...
- Patent number 11,798,993
- Issue date Oct 24, 2023
- Fuji Electric Co., Ltd.
- Keiji Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction power semiconductor devices formed via ion implantati...
- Patent number 11,791,378
- Issue date Oct 17, 2023
- Wolfspeed, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing substrate, method for manufacturing semico...
- Patent number 11,764,059
- Issue date Sep 19, 2023
- Kabushiki Kaisha Toshiba
- Johji Nishio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with compensation region and method of manuf...
- Patent number 11,764,063
- Issue date Sep 19, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming polycrystalline channel on dielectric films wit...
- Patent number 11,742,213
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Hsien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of re-using a silicon carbide substrate
- Patent number 11,735,642
- Issue date Aug 22, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky rectifier with surge-current ruggedness
- Patent number 11,715,804
- Issue date Aug 1, 2023
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power devices having multiple gate trenches and metho...
- Patent number 11,664,434
- Issue date May 30, 2023
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device, power converter, method of ma...
- Patent number 11,637,184
- Issue date Apr 25, 2023
- Mitsubishi Electric Corporation
- Kohei Adachi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device with a contact region having e...
- Patent number 11,615,953
- Issue date Mar 28, 2023
- Microchip Technology Inc.
- Amaury Gendron-Hansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate semiconductor device
- Patent number 11,610,969
- Issue date Mar 21, 2023
- Fuji Electric Co., Ltd.
- Keiji Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical elements
- Patent number 11,590,531
- Issue date Feb 28, 2023
- VisEra Technologies Company Limited
- Sheng-Chuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with compensation layer and method of manufa...
- Patent number 11,552,172
- Issue date Jan 10, 2023
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single sided channel mesa power junction field effect transistor
- Patent number 11,545,585
- Issue date Jan 3, 2023
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 11,538,902
- Issue date Dec 27, 2022
- Fuji Electric Co., Ltd.
- Naoki Kumagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device, metho...
- Patent number 11,515,387
- Issue date Nov 29, 2022
- Fuji Electric Co., Ltd.
- Yasuyuki Kawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC super junction trench MOSFET
- Patent number 11,462,638
- Issue date Oct 4, 2022
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Angled ion implant to reduce MOSFET trench sidewall roughness
- Patent number 11,424,125
- Issue date Aug 23, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating a silicon carbide and nitride structures on a carrier s...
- Patent number 11,361,964
- Issue date Jun 14, 2022
- The Boeing Company
- Samuel J. Whiteley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer including silicon carbide wafer and method for...
- Patent number 11,348,844
- Issue date May 31, 2022
- Denso Corporation
- Shinya Takei
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE MOSFET DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240136421
- Publication date Apr 25, 2024
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN AND MANUFACTURE OF SELF-ALIGNED POWER MOSFETs
- Publication number 20240128348
- Publication date Apr 18, 2024
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET) INCLUDI...
- Publication number 20240128323
- Publication date Apr 18, 2024
- THE RESEARCH FOUNDATION FOR THE STATE UNIVERSTIY OF NEW YORK
- Woongje SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240105858
- Publication date Mar 28, 2024
- Fuji Electric Co., Ltd.
- Yuichi HASHIZUME
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20240088215
- Publication date Mar 14, 2024
- Lingrui Semiconductor (Shanghai) Co., Ltd.
- Cesare Ronsisvalle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC MOSFET Including Trench with Rounded Corners
- Publication number 20240079236
- Publication date Mar 7, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SEMICONDUCTOR DEVICE
- Publication number 20240072108
- Publication date Feb 29, 2024
- Rohm Co., Ltd.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTATION METHOD AND ION IMPLANTER
- Publication number 20240047176
- Publication date Feb 8, 2024
- Sumitomo Heavy Industries Ion Technology Co., Ltd.
- Yoji Kawasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD OF MANUFACTURING A VERTICAL ORIENTED SEMICONDUCTOR DEVICE...
- Publication number 20240030307
- Publication date Jan 25, 2024
- NEXPERIA B.V.
- Falk-Ulrich Stein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEAT TREATMENT ENVIRONMENT EVALUATION METHOD AND SILICON CARBIDE SU...
- Publication number 20240020814
- Publication date Jan 18, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SCHOTTKY RECTIFIER WITH SURGE-CURRENT RUGGEDNESS
- Publication number 20230411536
- Publication date Dec 21, 2023
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Andrei KONSTANTINOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING TRENCH SHIELDING PAT...
- Publication number 20230411446
- Publication date Dec 21, 2023
- Wolfspeed, Inc.
- Madankumar Sampath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL DISCHARGE MACHINING OF SEMICONDUCTORS
- Publication number 20230395381
- Publication date Dec 7, 2023
- Nielson Scientific, LLC
- Gregory NIELSON
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
METHODS FOR FORMING POLYCRYSTALLINE CHANNEL ON DIELECTRIC FILMS WIT...
- Publication number 20230386856
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Hsien WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Semiconductor Devices in a Layer of Epitaxial Si...
- Publication number 20230361196
- Publication date Nov 9, 2023
- Infineon Techmologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230299130
- Publication date Sep 21, 2023
- Kabushiki Kaisha Toshiba
- Shunsuke ASABA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING AN ELECTRONIC DEVICE, SUCH AS A JBS OR MPS DIODE, BASED ON...
- Publication number 20230299173
- Publication date Sep 21, 2023
- STMicroelectronics S.r.l.
- Simone RASCUNA'
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH JUNCTION FIELD EFFECT TRANSISTOR HAVING A MESA REGION
- Publication number 20230261117
- Publication date Aug 17, 2023
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH METALLIC INTERFACE LAYERS AND METHOD OF...
- Publication number 20230253454
- Publication date Aug 10, 2023
- INFINEON TECHNOLOGIES AG
- Ravi Keshav Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC SEMICONDUCTOR DEVICE
- Publication number 20230197786
- Publication date Jun 22, 2023
- Rohm Co., Ltd.
- Seigo MORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20230197519
- Publication date Jun 22, 2023
- DENSO CORPORATION
- YUJI NAGUMO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230170399
- Publication date Jun 1, 2023
- DENSO CORPORATION
- YOSUKE MAEGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A TRENCH GATE STRUCTURE
- Publication number 20230163167
- Publication date May 25, 2023
- INFINEON TECHNOLOGIES AG
- Michael HELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230147932
- Publication date May 11, 2023
- Mitsubishi Electric Corporation
- Yoichiro TARUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE SIDED CHANNEL MESA POWER JUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20230098516
- Publication date Mar 30, 2023
- Monolithic Power Systems, Inc.
- Vipindas PALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230083106
- Publication date Mar 16, 2023
- INFINEON TECHNOLOGIES AG
- Moriz JELINEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230077367
- Publication date Mar 16, 2023
- RENESAS ELECTRONICS CORPORATION
- Yasuhiro OKAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE SIDED CHANNEL MESA POWER JUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20230047121
- Publication date Feb 16, 2023
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE MOSFET DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230038280
- Publication date Feb 9, 2023
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Hui Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SUPER JUNCTION TRENCH MOSFET
- Publication number 20220367710
- Publication date Nov 17, 2022
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS

characterised by the angle between the ion beam and the crystal planes or the main crystal surface

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Ion beam implantation method and semiconductor device

Separation method of wafer

And manufacture of self-aligned power devices

Silicon carbide MOSFET device and manufacturing method thereof

Method of forming a semiconductor device

Single sided channel mesa power junction field effect transistor

Silicon carbide semiconductor device and method of manufacturing same

Ion implantation method and ion implanter

Semiconductor substrate processing methods

Channeled implants for SiC MOSFET fabrication

Insulated-gate semiconductor device and method of manufacturing the...

Superjunction power semiconductor devices formed via ion implantati...

Method for manufacturing substrate, method for manufacturing semico...

Silicon carbide device with compensation region and method of manuf...

Methods for forming polycrystalline channel on dielectric films wit...

Methods of re-using a silicon carbide substrate

Schottky rectifier with surge-current ruggedness

Semiconductor power devices having multiple gate trenches and metho...

Silicon carbide semiconductor device, power converter, method of ma...

Silicon carbide semiconductor device with a contact region having e...

Insulated-gate semiconductor device

Optical elements

Silicon carbide device with compensation layer and method of manufa...

Single sided channel mesa power junction field effect transistor

Silicon carbide semiconductor device

Method of manufacturing silicon carbide semiconductor device, metho...

SiC super junction trench MOSFET

Angled ion implant to reduce MOSFET trench sidewall roughness

Fabricating a silicon carbide and nitride structures on a carrier s...

Semiconductor wafer including silicon carbide wafer and method for...

Patents Applicationslast 30 patents

SILICON CARBIDE MOSFET DEVICE AND MANUFACTURING METHOD THEREOF

DESIGN AND MANUFACTURE OF SELF-ALIGNED POWER MOSFETs

METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET) INCLUDI...

SILICON CARBIDE SEMICONDUCTOR DEVICE

TRENCH MOSFET DEVICE AND MANUFACTURING METHOD THEREFOR

SiC MOSFET Including Trench with Rounded Corners

SIC SEMICONDUCTOR DEVICE

ION IMPLANTATION METHOD AND ION IMPLANTER

A METHOD OF MANUFACTURING A VERTICAL ORIENTED SEMICONDUCTOR DEVICE...

HEAT TREATMENT ENVIRONMENT EVALUATION METHOD AND SILICON CARBIDE SU...

SCHOTTKY RECTIFIER WITH SURGE-CURRENT RUGGEDNESS

GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING TRENCH SHIELDING PAT...

ELECTRICAL DISCHARGE MACHINING OF SEMICONDUCTORS

METHODS FOR FORMING POLYCRYSTALLINE CHANNEL ON DIELECTRIC FILMS WIT...

Methods of Forming Semiconductor Devices in a Layer of Epitaxial Si...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

FORMING AN ELECTRONIC DEVICE, SUCH AS A JBS OR MPS DIODE, BASED ON...

TRENCH JUNCTION FIELD EFFECT TRANSISTOR HAVING A MESA REGION

SILICON CARBIDE DEVICE WITH METALLIC INTERFACE LAYERS AND METHOD OF...

SiC SEMICONDUCTOR DEVICE

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING A TRENCH GATE STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SINGLE SIDED CHANNEL MESA POWER JUNCTION FIELD EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SINGLE SIDED CHANNEL MESA POWER JUNCTION FIELD EFFECT TRANSISTOR

SILICON CARBIDE MOSFET DEVICE AND MANUFACTURING METHOD THEREOF

SIC SUPER JUNCTION TRENCH MOSFET