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characterised by the angle between the ion beam and the crystal planes or the main crystal surface
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CPC
H01L21/047
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Parent Industries
H
ELECTRICITY
H01
Electric elements
H01L
SEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
H01L21/00
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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H01L21/047
characterised by the angle between the ion beam and the crystal planes or the main crystal surface
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