characterised by the angle between the ion beam and the crystal planes or the main crystal surface

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H01L21/047

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/047characterised by the angle between the ion beam and the crystal planes or the main crystal surface

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide MOSFET device and manufacturing method thereof
- Patent number 12,310,042
- Issue date May 20, 2025
- HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 12,283,620
- Issue date Apr 22, 2025
- Denso Corporation
- Yosuke Maegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gated heterostructure and double-heterostructure active devices
- Patent number 12,284,817
- Issue date Apr 22, 2025
- MaxPower Semiconductor Inc.
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices in a layer of epitaxial si...
- Patent number 12,272,738
- Issue date Apr 8, 2025
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser edge shaping for semiconductor wafers
- Patent number 12,269,123
- Issue date Apr 8, 2025
- Wolfspeed, Inc.
- Joseph Taylor Budd
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Ion implantation method and ion implanter
- Patent number 12,255,046
- Issue date Mar 18, 2025
- Sumitomo Heavy Industries Ion Technology Co., Ltd.
- Yoji Kawasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate silicon carbide MOSFET device and fabrication method th...
- Patent number 12,237,410
- Issue date Feb 25, 2025
- JSAB TECHNOLOGIES (SHENZHEN) LTD.
- Yong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,230,704
- Issue date Feb 18, 2025
- Fuji Electric Co., Ltd.
- Yasuyuki Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Temperature controlled substrate carrier and polishing components
- Patent number 12,217,979
- Issue date Feb 4, 2025
- Axus Technology, LLC
- Daniel Ray Trojan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single sided channel mesa power junction field effect transistor
- Patent number 12,206,028
- Issue date Jan 21, 2025
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of reducing the electrical and thermal resistance of SiC su...
- Patent number 12,148,825
- Issue date Nov 19, 2024
- Purdue Research Foundation
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching method and etching apparatus
- Patent number 12,142,495
- Issue date Nov 12, 2024
- Tokyo Electron Limited
- Toshiki Kanaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky rectifier with surge-current ruggedness
- Patent number 12,107,173
- Issue date Oct 1, 2024
- Semiconductor Components Industries, LLC
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall dopant shielding methods and approaches for trenched semic...
- Patent number 12,094,926
- Issue date Sep 17, 2024
- Wolfspeed, Inc.
- Daniel J. Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate semiconductor device and method of manufacturing the...
- Patent number 12,074,200
- Issue date Aug 27, 2024
- Fuji Electric Co., Ltd.
- Keiji Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabricated using channeling implant
- Patent number 12,057,316
- Issue date Aug 6, 2024
- Infineon Technologies AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming polycrystalline channel on dielectric films wit...
- Patent number 12,057,321
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Hsien Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Large diameter silicon carbide wafers
- Patent number 12,054,850
- Issue date Aug 6, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Directional modification of patterning structure to enhance pattern...
- Patent number 11,984,318
- Issue date May 14, 2024
- Applied Materials, Inc.
- Shurong Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion beam implantation method and semiconductor device
- Patent number 11,908,694
- Issue date Feb 20, 2024
- Infineon Technologies AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Separation method of wafer
- Patent number 11,901,231
- Issue date Feb 13, 2024
- Disco Corporation
- Asahi Nomoto
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
And manufacture of self-aligned power devices
- Patent number 11,901,432
- Issue date Feb 13, 2024
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide MOSFET device and manufacturing method thereof
- Patent number 11,894,440
- Issue date Feb 6, 2024
- HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device
- Patent number 11,888,024
- Issue date Jan 30, 2024
- Infineon Technologies AG
- Reinhard Ploss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single sided channel mesa power junction field effect transistor
- Patent number 11,869,982
- Issue date Jan 9, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing same
- Patent number 11,848,358
- Issue date Dec 19, 2023
- Mitsubishi Electric Corporation
- Rina Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation method and ion implanter
- Patent number 11,830,703
- Issue date Nov 28, 2023
- SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO, LTD.
- Yoji Kawasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate processing methods
- Patent number 11,823,953
- Issue date Nov 21, 2023
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Michael J. Seddon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channeled implants for SiC MOSFET fabrication
- Patent number 11,804,537
- Issue date Oct 31, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate semiconductor device and method of manufacturing the...
- Patent number 11,798,993
- Issue date Oct 24, 2023
- Fuji Electric Co., Ltd.
- Keiji Okumura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device and Method of Forming Silicon Carbide Switch-B...
- Publication number 20250157813
- Publication date May 15, 2025
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD AND POWER SEMICONDUCTOR DEVICE
- Publication number 20250113570
- Publication date Apr 3, 2025
- Hitachi Energy Ltd
- Giovanni ALFIERI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250107189
- Publication date Mar 27, 2025
- Hon Young Semiconductor Corporation
- Jian-Yi WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED REGIONS OF A JUNCTION TERMINATION EXTENSION FOR SEMICONDUC...
- Publication number 20250107167
- Publication date Mar 27, 2025
- NEXPERIA B.V.
- Tim Böttcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP SURFACE OF A JUNCTION TERMINATION EXTENSION FOR SEMICONDUCTOR D...
- Publication number 20250107165
- Publication date Mar 27, 2025
- NEXPERIA B.V.
- Tim Böttcher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma Etched Compound Semiconductor
- Publication number 20250079175
- Publication date Mar 6, 2025
- SPTS TECHNOLOGIES LIMITED
- Alex CROOT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SUPERJUNCTION-STRUCTURE
- Publication number 20250063775
- Publication date Feb 20, 2025
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250063796
- Publication date Feb 20, 2025
- Kabushiki Kaisha Toshiba
- Hiroki NEMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250056836
- Publication date Feb 13, 2025
- Mitsubishi Electric Corporation
- Yuichi NAGAHISA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC TRENCH BOTTOM CORNER ROUNDING
- Publication number 20250038000
- Publication date Jan 30, 2025
- Applied Materials, Inc.
- Qintao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250031394
- Publication date Jan 23, 2025
- FUJI ELECTRIC CO., LTD.
- Shin MIYAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250022917
- Publication date Jan 16, 2025
- Hyundai Motor Company
- NackYong JOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL DOPANT SHIELDING METHODS AND APPROACHES FOR TRENCHED SEMIC...
- Publication number 20240413197
- Publication date Dec 12, 2024
- Wolfspeed, Inc.
- Daniel J. Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LARGE DIAMETER SILICON CARBIDE WAFERS
- Publication number 20240352622
- Publication date Oct 24, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A REDUCED CONCENTRATION OF CARBON VACAN...
- Publication number 20240339322
- Publication date Oct 10, 2024
- Hitachi Energy Ltd
- Giovanni ALFIERI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240339323
- Publication date Oct 10, 2024
- Fuji Electric Co., Ltd.
- Atsushi YOSHIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, POWER CONVERSIO...
- Publication number 20240321950
- Publication date Sep 26, 2024
- Huawei Digital Power Technologies Co., Ltd.
- Kimimori HAMADA
- B60 - VEHICLES IN GENERAL
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240290881
- Publication date Aug 29, 2024
- RENESAS ELECTRONICS CORPORATION
- Yasuhiro OKAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD, POWER CONVERSION CIRCUI...
- Publication number 20240274657
- Publication date Aug 15, 2024
- Huawei Digital Power Technologies Co., Ltd.
- Kimimori HAMADA
- B60 - VEHICLES IN GENERAL
Information Patent Application
TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240266401
- Publication date Aug 8, 2024
- SUZHOU LOONGSPEED SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Jinwei QI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE MOSFET DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240234536
- Publication date Jul 11, 2024
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH ADDITIONAL MESA STRUCTURES FOR REDUCED S...
- Publication number 20240145537
- Publication date May 2, 2024
- Wolfspeed, Inc.
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING CHIPS
- Publication number 20240145307
- Publication date May 2, 2024
- Disco Corporation
- Takumi KOHEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION BEAM IMPLANTATION METHOD AND SEMICONDUCTOR DEVICE
- Publication number 20240145247
- Publication date May 2, 2024
- INFINEON TECHNOLOGIES AG
- Moriz JELINEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE MOSFET DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240136421
- Publication date Apr 25, 2024
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN AND MANUFACTURE OF SELF-ALIGNED POWER MOSFETs
- Publication number 20240128348
- Publication date Apr 18, 2024
- GeneSiC Semiconductor Inc.
- Siddarth Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET) INCLUDI...
- Publication number 20240128323
- Publication date Apr 18, 2024
- THE RESEARCH FOUNDATION FOR THE STATE UNIVERSTIY OF NEW YORK
- Woongje SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240105858
- Publication date Mar 28, 2024
- Fuji Electric Co., Ltd.
- Yuichi HASHIZUME
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20240088215
- Publication date Mar 14, 2024
- Lingrui Semiconductor (Shanghai) Co., Ltd.
- Cesare Ronsisvalle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC MOSFET Including Trench with Rounded Corners
- Publication number 20240079236
- Publication date Mar 7, 2024
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS

characterised by the angle between the ion beam and the crystal planes or the main crystal surface

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Silicon carbide MOSFET device and manufacturing method thereof

Method for manufacturing semiconductor device

Trench-gated heterostructure and double-heterostructure active devices

Methods of forming semiconductor devices in a layer of epitaxial si...

Laser edge shaping for semiconductor wafers

Ion implantation method and ion implanter

Trench gate silicon carbide MOSFET device and fabrication method th...

Semiconductor device

Temperature controlled substrate carrier and polishing components

Single sided channel mesa power junction field effect transistor

Methods of reducing the electrical and thermal resistance of SiC su...

Etching method and etching apparatus

Schottky rectifier with surge-current ruggedness

Sidewall dopant shielding methods and approaches for trenched semic...

Insulated-gate semiconductor device and method of manufacturing the...

Semiconductor device fabricated using channeling implant

Methods for forming polycrystalline channel on dielectric films wit...

Large diameter silicon carbide wafers

Directional modification of patterning structure to enhance pattern...

Ion beam implantation method and semiconductor device

Separation method of wafer

And manufacture of self-aligned power devices

Silicon carbide MOSFET device and manufacturing method thereof

Method of forming a semiconductor device

Single sided channel mesa power junction field effect transistor

Silicon carbide semiconductor device and method of manufacturing same

Ion implantation method and ion implanter

Semiconductor substrate processing methods

Channeled implants for SiC MOSFET fabrication

Insulated-gate semiconductor device and method of manufacturing the...

Patents Applicationslast 30 patents

Semiconductor Device and Method of Forming Silicon Carbide Switch-B...

MANUFACTURING METHOD AND POWER SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

RECESSED REGIONS OF A JUNCTION TERMINATION EXTENSION FOR SEMICONDUC...

TOP SURFACE OF A JUNCTION TERMINATION EXTENSION FOR SEMICONDUCTOR D...

Plasma Etched Compound Semiconductor

SEMICONDUCTOR DEVICE HAVING A SUPERJUNCTION-STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SiC TRENCH BOTTOM CORNER ROUNDING

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SIDEWALL DOPANT SHIELDING METHODS AND APPROACHES FOR TRENCHED SEMIC...

LARGE DIAMETER SILICON CARBIDE WAFERS

SEMICONDUCTOR DEVICE HAVING A REDUCED CONCENTRATION OF CARBON VACAN...

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, POWER CONVERSIO...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD, POWER CONVERSION CIRCUI...

TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF

SILICON CARBIDE MOSFET DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICES WITH ADDITIONAL MESA STRUCTURES FOR REDUCED S...

METHOD OF MANUFACTURING CHIPS

ION BEAM IMPLANTATION METHOD AND SEMICONDUCTOR DEVICE

SILICON CARBIDE MOSFET DEVICE AND MANUFACTURING METHOD THEREOF

DESIGN AND MANUFACTURE OF SELF-ALIGNED POWER MOSFETs

METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET) INCLUDI...

SILICON CARBIDE SEMICONDUCTOR DEVICE

TRENCH MOSFET DEVICE AND MANUFACTURING METHOD THEREFOR

SiC MOSFET Including Trench with Rounded Corners