characterised by the contact structure of the substrate region

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CPC
H01L29/1087

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/1087characterised by the contact structure of the substrate region

Industries

Patents Grantslast 30 patents

Information Patent Grant
HVMOS reliability evaluation using bulk resistances as indices
- Patent number 11,955,389
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor structure
- Patent number 11,935,950
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep nwell contact structures
- Patent number 11,929,399
- Issue date Mar 12, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Navneet K. Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation layer for epitaxial semiconductor process
- Patent number 11,908,900
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yin-Kai Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET and memory cell having improved drain current through back b...
- Patent number 11,908,899
- Issue date Feb 20, 2024
- Zeno Semiconductor, Inc.
- Jin-Woo Han
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device structures and methods of manufacturing the same
- Patent number 11,862,722
- Issue date Jan 2, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating field-effect transistors with interleaved source and dr...
- Patent number 11,842,947
- Issue date Dec 12, 2023
- Skyworks Solutions, Inc.
- Hailing Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NAND string utilizing floating body memory cell
- Patent number 11,818,878
- Issue date Nov 14, 2023
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Grant
Ion sensitive field effect transistor (FET) with back-gate coupled...
- Patent number 11,815,486
- Issue date Nov 14, 2023
- International Business Machines Corporation
- Paul M. Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device integration on a common substrate
- Patent number 11,791,377
- Issue date Oct 17, 2023
- Silanna Asia Pte Ltd
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,777,030
- Issue date Oct 3, 2023
- Rohm Co., Ltd.
- Shuhei Mitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing body-source-tied SOI transistor
- Patent number 11,756,823
- Issue date Sep 12, 2023
- Newport Fab, LLC
- Allan K Calvo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor and method for manufacturing the same
- Patent number 11,757,035
- Issue date Sep 12, 2023
- HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Bing Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk substrates with a self-aligned buried polycrystalline layer
- Patent number 11,749,559
- Issue date Sep 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked field effect transistors
- Patent number 11,728,348
- Issue date Aug 15, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-off HEMT transistor with selective generation of 2DEG chan...
- Patent number 11,699,748
- Issue date Jul 11, 2023
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device and method of manufacturing the same
- Patent number 11,670,684
- Issue date Jun 6, 2023
- Infineon Technologies Austria AG
- Li Juin Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS and fabricating method of the same
- Patent number 11,670,713
- Issue date Jun 6, 2023
- United Microelectronics Corp.
- Chung-Yen Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS and fabricating method of the same
- Patent number 11,616,139
- Issue date Mar 28, 2023
- United Microelectronics Corp.
- Chung-Yen Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device and manufacturing method thereof
- Patent number 11,616,125
- Issue date Mar 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,610,992
- Issue date Mar 21, 2023
- Rohm Co., Ltd.
- Shuhei Mitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures for improving radiation hardness and eliminating latch-u...
- Patent number 11,587,822
- Issue date Feb 21, 2023
- Silicon Space Technology Corporation
- David R. Gifford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,552,175
- Issue date Jan 10, 2023
- Rohm Co., Ltd.
- Nobuyuki Otsubo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low noise amplifier transistors with decreased noise figure and lea...
- Patent number 11,552,196
- Issue date Jan 10, 2023
- Skyworks Solutions, Inc.
- Oleksandr Gorbachov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor isolation structure and method for making the semicon...
- Patent number 11,532,701
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Fu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk substrates with a self-aligned buried polycrystalline layer
- Patent number 11,527,432
- Issue date Dec 13, 2022
- GLOBALFOUNDRIES U.S. INC.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with self-aligned body and hybrid source
- Patent number 11,522,053
- Issue date Dec 6, 2022
- Amplexia, LLC
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Breakdown voltage capability of high voltage device
- Patent number 11,508,757
- Issue date Nov 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Chih Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation layer for epitaxial semiconductor process
- Patent number 11,508,817
- Issue date Nov 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yin-Kai Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HVMOS reliability evaluation using bulk resistances as indices
- Patent number 11,482,459
- Issue date Oct 25, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MOSFET and Memory Cell Having Improved Drain Current Through Back B...
- Publication number 20240145547
- Publication date May 2, 2024
- Zeno Semiconductor, Inc.
- Jin-Woo Han
- G11 - INFORMATION STORAGE
Information Patent Application
PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS
- Publication number 20240136401
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin-Kai Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH ADJUSTABLE EFFECTIVE GATE LENGTH
- Publication number 20240097029
- Publication date Mar 21, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Nan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20240088058
- Publication date Mar 14, 2024
- OOKUMA DIAMOND DEVICE Inc.
- Junichi KANEKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND String Utilizing Floating Body Memory Cell
- Publication number 20240040767
- Publication date Feb 1, 2024
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240030292
- Publication date Jan 25, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- CHIA-CHENG HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE
- Publication number 20230420497
- Publication date Dec 28, 2023
- Silanna Asia Pte Ltd
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230395713
- Publication date Dec 7, 2023
- Rohm Co., Ltd.
- Shuhei MITANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A BODY CONTACT REGION AND METHOD OF...
- Publication number 20230352536
- Publication date Nov 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vvss Satyasuresh CHOPPALLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS HAVING A GATE ELECTRODE POSITIONED INSIDE...
- Publication number 20230317776
- Publication date Oct 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Michel Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP NWELL CONTACT STRUCTURES
- Publication number 20230282707
- Publication date Sep 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Navneet K. Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTOR DEVICE HAVING A TITLED BODY CONTACT AREA...
- Publication number 20230246071
- Publication date Aug 3, 2023
- Infineon Technologies Austria AG
- Li Juin Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230246072
- Publication date Aug 3, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon-Jhy LIAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE INSENSITIVE TRANSISTOR CIRCUITS
- Publication number 20230068950
- Publication date Mar 2, 2023
- Intel Corporation
- Dmitri Evgenievich Nikonov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH SELF-ALIGNED BODY AND HYBRID SOURCE
- Publication number 20230054381
- Publication date Feb 23, 2023
- Amplexia, LLC
- Brendan TONER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BREAKDOWN VOLTAGE CAPABILITY OF HIGH VOLTAGE DEVICE
- Publication number 20230014120
- Publication date Jan 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Chih CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BODY CONTACT FET
- Publication number 20230009677
- Publication date Jan 12, 2023
- Skyworks Solutions, Inc.
- Hailing Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS AND FABRICATING METHOD OF THE SAME
- Publication number 20220384638
- Publication date Dec 1, 2022
- UNITED MICROELECTRONICS CORP.
- Chung-Yen Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220376051
- Publication date Nov 24, 2022
- Rohm Co., Ltd.
- Yasunobu HAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS
- Publication number 20220367638
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin-Kai Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND String Utilizing Floating Body Memory Cell
- Publication number 20220367472
- Publication date Nov 17, 2022
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Application
High Voltage Device and Manufacturing Method Thereof
- Publication number 20220336588
- Publication date Oct 20, 2022
- RICHTEK TECHNOLOGY CORPORATION
- Chih-Wen Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220328617
- Publication date Oct 13, 2022
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Xianguo Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20220310834
- Publication date Sep 29, 2022
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Chao YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220302259
- Publication date Sep 22, 2022
- Panasonic Intellectual Property Management Co., Ltd.
- Hiroto YAMAGIWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ISOLATION STRUCTURE AND METHOD FOR MAKING THE SEMICON...
- Publication number 20220293723
- Publication date Sep 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Fu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS AND FABRICATING METHOD OF THE SAME
- Publication number 20220271157
- Publication date Aug 25, 2022
- UNITED MICROELECTRONICS CORP.
- Chung-Yen Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220262947
- Publication date Aug 18, 2022
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Bing Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE VERTICAL CONDUCTION MOSFET DEVICE AND MANUFACTURING...
- Publication number 20220246729
- Publication date Aug 4, 2022
- STMicroelectronics S.r.l.
- Mario Giuseppe SAGGIO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR STORAGE DEVICE
- Publication number 20220246632
- Publication date Aug 4, 2022
- KIOXIA Corporation
- Takeshi SHIMANE
- H01 - BASIC ELECTRIC ELEMENTS

characterised by the contact structure of the substrate region

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

HVMOS reliability evaluation using bulk resistances as indices

High voltage transistor structure

Deep nwell contact structures

Passivation layer for epitaxial semiconductor process

MOSFET and memory cell having improved drain current through back b...

Semiconductor device structures and methods of manufacturing the same

Fabricating field-effect transistors with interleaved source and dr...

NAND string utilizing floating body memory cell

Ion sensitive field effect transistor (FET) with back-gate coupled...

Power device integration on a common substrate

Semiconductor device

Method for manufacturing body-source-tied SOI transistor

LDMOS transistor and method for manufacturing the same

Bulk substrates with a self-aligned buried polycrystalline layer

Vertically stacked field effect transistors

Normally-off HEMT transistor with selective generation of 2DEG chan...

Semiconductor transistor device and method of manufacturing the same

LDMOS and fabricating method of the same

LDMOS and fabricating method of the same

Integrated circuit device and manufacturing method thereof

Semiconductor device

Structures for improving radiation hardness and eliminating latch-u...

Semiconductor device

Low noise amplifier transistors with decreased noise figure and lea...

Semiconductor isolation structure and method for making the semicon...

Bulk substrates with a self-aligned buried polycrystalline layer

LDMOS with self-aligned body and hybrid source

Breakdown voltage capability of high voltage device

Passivation layer for epitaxial semiconductor process

HVMOS reliability evaluation using bulk resistances as indices

Patents Applicationslast 30 patents

MOSFET and Memory Cell Having Improved Drain Current Through Back B...

PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS

FIELD EFFECT TRANSISTOR WITH ADJUSTABLE EFFECTIVE GATE LENGTH

FIELD EFFECT TRANSISTOR

NAND String Utilizing Floating Body Memory Cell

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING A BODY CONTACT REGION AND METHOD OF...

FIELD-EFFECT TRANSISTORS HAVING A GATE ELECTRODE POSITIONED INSIDE...

DEEP NWELL CONTACT STRUCTURES

SEMICONDUCTOR TRANSISTOR DEVICE HAVING A TITLED BODY CONTACT AREA...

INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF

LEAKAGE INSENSITIVE TRANSISTOR CIRCUITS

LDMOS WITH SELF-ALIGNED BODY AND HYBRID SOURCE

BREAKDOWN VOLTAGE CAPABILITY OF HIGH VOLTAGE DEVICE

BODY CONTACT FET

LDMOS AND FABRICATING METHOD OF THE SAME

SEMICONDUCTOR DEVICE

PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS

NAND String Utilizing Floating Body Memory Cell

High Voltage Device and Manufacturing Method Thereof

FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR ISOLATION STRUCTURE AND METHOD FOR MAKING THE SEMICON...

LDMOS AND FABRICATING METHOD OF THE SAME

LDMOS TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

SILICON CARBIDE VERTICAL CONDUCTION MOSFET DEVICE AND MANUFACTURING...

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR STORAGE DEVICE