Circuits for generating electric pulses Monostable, bistable or multistable circuits

HELECTRICITY H03Electronic circuits H03KPULSE TECHNIQUE

H03K3/00Circuits for generating electric pulses Monostable, bistable or multistable circuits

H03K3/01Details H03K3/011Modifications of generator to compensate for variations in physical values H03K3/012Modifications of generator to improve response time or to decrease power consumption H03K3/013Modifications of generator to prevent operation by noise or interference H03K3/014Modifications of generator to ensure starting of oscillations H03K3/015Modifications of generator to maintain energy constant H03K3/017Adjustment of width or dutycycle of pulses H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses H03K3/021by the use, as active elements, of more than one type of element or means H03K3/023by the use of differential amplifiers or comparators, with internal or external positive feedback H03K3/0231Astable circuits H03K3/02315Stabilisation of output H03K3/0232Monostable circuits H03K3/0233Bistable circuits H03K3/02332of the master-slave type H03K3/02335provided with means for increasing reliability; for protection; for ensuring a predetermined initial state when the supply voltage has been applied; for storing the actual state when the supply voltage fails H03K3/02337Bistables with hysteresis H03K3/0234Multistable circuits H03K3/027by the use of logic circuits, with internal or external positive feedback H03K3/03Astable circuits H03K3/0307Stabilisation of output H03K3/0315Ring oscillators H03K3/0322with differential cells H03K3/033Monostable circuits H03K3/037Bistable circuits H03K3/0372of the master-slave type H03K3/0375provided with means for increasing reliability; for protection; for ensuring a predetermined initial state when the supply voltage has been applied; for storing the actual state when the supply voltage fails H03K3/0377Bistables with hysteresis H03K3/038Multistable circuits H03K3/04by the use, as active elements, of vacuum tubes only, with positive feedback H03K3/05using means other than a transformer for feedback H03K3/06using at least two tubes so coupled that the input of one is derived from the output of another H03K3/08astable H03K3/09Stabilisation of output H03K3/10monostable H03K3/12bistable H03K3/13Bistables with hysteresis H03K3/14multistable H03K3/16using a transformer for feedback H03K3/22specially adapted for amplitude comparison H03K3/26by the use, as active elements, of bipolar transistors with internal or external positive feedback H03K3/28using means other than a transformer for feedback H03K3/281using at least two transistors so coupled that the input of one is derived from the output of another H03K3/282astable H03K3/2821Emitters connected to one another by using a capacitor H03K3/2823using two active transistor of the same conductivity type H03K3/2825in an asymmetrical circuit configuration H03K3/2826using two active transistors of the complementary type H03K3/2828in an asymmetrical circuit configuration H03K3/283Stabilisation of output H03K3/284monostable H03K3/286bistable H03K3/2865ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails H03K3/287using additional transistors in the feedback circuit H03K3/288using additional transistors in the input circuit H03K3/2885the input circuit having a differential configuration H03K3/289of the master-slave type H03K3/2893Bistables with hysteresis H03K3/2897with an input circuit of differential configuration H03K3/29multistable H03K3/30using a transformer for feedback H03K3/313by the use, as active elements, of semiconductor devices with two electrodes, one or two potential-jump barriers, and exhibiting a negative resistance characteristic H03K3/315the devices being tunnel diodes H03K3/33by the use, as active elements, of semiconductor devices exhibiting hole storage or enhancement effect H03K3/335by the use, as active elements, of semiconductor devices with more than two electrodes and exhibiting avalanche effect H03K3/35by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region H03K3/351the devices being unijunction transistors H03K3/352the devices being thyristors H03K3/3525Anode gate thyristors or programmable unijunction transistors H03K3/353by the use, as active elements, of field-effect transistors with internal or external positive feedback H03K3/354Astable circuits H03K3/3545Stabilisation of output H03K3/355Monostable circuits H03K3/356Bistable circuits H03K3/356008ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails H03K3/356017using additional transistors in the input circuit H03K3/356026with synchronous operation H03K3/356034the input circuit having a differential configuration H03K3/356043with synchronous operation H03K3/356052using pass gates H03K3/35606with synchronous operation H03K3/356069using additional transistors in the feedback circuit H03K3/356078with synchronous operation H03K3/356086with additional means for controlling the main nodes H03K3/356095with synchronous operation H03K3/356104using complementary field-effect transistors H03K3/356113using additional transistors in the input circuit H03K3/356121with synchronous operation H03K3/35613the input circuit having a differential configuration H03K3/356139with synchronous operation H03K3/356147using pass gates H03K3/356156with synchronous operation H03K3/356165using additional transistors in the feedback circuit H03K3/356173with synchronous operation H03K3/356182with additional means for controlling the main nodes H03K3/356191with synchronous operation H03K3/3562of the master-slave type H03K3/35625using complementary field-effect transistors H03K3/3565Bistables with hysteresis H03K3/3568Multistable circuits H03K3/357by the use, as active elements, of bulk negative resistance devices H03K3/36by the use, as active elements, of semiconductors, not otherwise provided for H03K3/37by the use, as active elements, of gas-filled tubes H03K3/38by the use, as active elements, of superconductive devices H03K3/40by the use, as active elements, of electrochemical cells H03K3/42by the use, as active elements, of opto-electronic devices H03K3/43by the use, as active elements, of beam deflection tubes H03K3/45by the use, as active elements, of non-linear magnetic or dielectric devices H03K3/455using thin films H03K3/47the devices being parametrons H03K3/49the devices being ferro-resonant H03K3/51the devices being multi-aperture magnetic cores H03K3/53by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback H03K3/537the switching device being a spark gap H03K3/543the switching device being a vacuum tube H03K3/55the switching device being a gas-filled tube having a control electrode H03K3/57the switching device being a semiconductor device H03K3/59by the use of galvano-magnetic devices H03K3/64Generators producing trains of pulses H03K3/66by interrupting the output of a generator H03K3/70time intervals between all adjacent pulses of one train being equal H03K3/72with means for varying repetition rate of trains H03K3/78Generating a single train of pulses having a predetermined pattern H03K3/80Generating train of sinusoidal oscillations H03K3/84Generating pulses having a predetermined statistical distribution of a parameter H03K3/86Generating pulses by means of delay lines and not covered by the preceding sub-groups