Combination of charge coupled devices

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H01L21/823406

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/823406Combination of charge coupled devices

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Patents Grantslast 30 patents

Information Patent Grant
Sensing device for sensing minor charge variations
- Patent number 10,818,785
- Issue date Oct 27, 2020
- Ecole Polytechnique Federale de Lausanne (EPFL)
- Cem Alper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, memory circuit, method of manufacturing semic...
- Patent number 10,269,867
- Issue date Apr 23, 2019
- Sony Corporation
- Takashi Yokoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having symmetric and asymmetric active fins
- Patent number 9,929,155
- Issue date Mar 27, 2018
- Samsung Electronics Co., Ltd.
- Ju-youn Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Large area, fast frame rate charge coupled device
- Patent number 6,841,811
- Issue date Jan 11, 2005
- Fairchild Imaging
- David Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Large area, fast frame rate charge coupled device
- Patent number 6,818,483
- Issue date Nov 16, 2004
- Fairchild Imaging
- David Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS imager cell having a buried contact
- Patent number 6,740,915
- Issue date May 25, 2004
- Micron Technology, Inc.
- Howard E. Rhodes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS imager cell having a buried contact and method of fabrication
- Patent number 6,291,280
- Issue date Sep 18, 2001
- Micron Technology, Inc.
- Howard E. Rhodes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Poly gate process that provides a novel solution to fix poly-2 resi...
- Patent number 6,251,719
- Issue date Jun 26, 2001
- Taiwan Semiconductor Manufacturing Company
- Jen Pan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming contacts on semiconductor substrates, radiation detectors a...
- Patent number 6,215,123
- Issue date Apr 10, 2001
- Simage Oy
- Risto O. Orava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a CMOS sensor
- Patent number 6,194,260
- Issue date Feb 27, 2001
- United Microelectronics Corp.
- Cheng-Hung Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming contacts on semiconductor substrates radiation detectors an...
- Patent number 6,046,068
- Issue date Apr 4, 2000
- Simage OY
- Risto O. Orava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation hardened charge coupled device
- Patent number 5,900,654
- Issue date May 4, 1999
- James P. Spratt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a thin poly, capacitor coupled contactless...
- Patent number 5,837,574
- Issue date Nov 17, 1998
- National Semiconductor Corporation
- Albert Bergemont
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preventing microroughness and contamination during CCD m...
- Patent number 5,648,292
- Issue date Jul 15, 1997
- LG Semicon Co., Ltd.
- Shang Ho Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming an output circuit device for a charge transfer...
- Patent number 5,569,616
- Issue date Oct 29, 1996
- Sony Corporation
- Hiroaki Ohki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Output circuit device for a charge transfer element having triparti...
- Patent number 5,498,887
- Issue date Mar 12, 1996
- Sony Corporation
- Hiroaki Ohki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an integrated circuit having a charge coupl...
- Patent number 5,489,545
- Issue date Feb 6, 1996
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Output circuit device for charge transfer element
- Patent number 5,432,364
- Issue date Jul 11, 1995
- Sony Corporation
- Hiroaki Ohki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making transparent polysilicon gate for imaging arrays
- Patent number 5,369,040
- Issue date Nov 29, 1994
- Westinghouse Electric Corporation
- James Halvis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating charge-coupled device
- Patent number 5,340,766
- Issue date Aug 23, 1994
- NEC Corporation
- Yasutaka Nakashiba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having a charge coupled device and MOS transisto...
- Patent number 5,321,282
- Issue date Jun 14, 1994
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid-state imaging device and method of manufacturing the same
- Patent number 5,286,669
- Issue date Feb 15, 1994
- Kabushiki Kaisha Toshiba
- Toru Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Virtual phase charge transfer device
- Patent number 4,994,875
- Issue date Feb 19, 1991
- Texas Instruments Incorporated
- Jaroslay Hynecek
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 4,877,754
- Issue date Oct 31, 1989
- U.S. Philips Corporation
- Hermanus L. Peek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 4,763,185
- Issue date Aug 9, 1988
- U.S. Philips Corporation
- Hermanus L. Peek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making edge-aligned implants and electrodes therefor
- Patent number 4,613,402
- Issue date Sep 23, 1986
- Eastman Kodak Company
- David L. Losee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with improved isolation between two layers...
- Patent number 4,498,095
- Issue date Feb 5, 1985
- International Business Machines Corporation
- Paul L. Garbarino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making eutectic charge-coupled devices
- Patent number 4,461,070
- Issue date Jul 24, 1984
- General Electric Company
- Harvey E. Cline
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-planar barrier-type charge coupled device with enhanced storage...
- Patent number 4,365,261
- Issue date Dec 21, 1982
- Texas Instruments Incorporated
- Pallab K. Chatterjee
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making buried channel charge coupled device with means fo...
- Patent number 4,362,575
- Issue date Dec 7, 1982
- RCA Corporation
- Lloyd F. Wallace
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Sensing Device for Sensing Minor Charge Variations
- Publication number 20190172937
- Publication date Jun 6, 2019
- ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
- Cem ALPER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, MEMORY CIRCUIT, METHOD OF MANUFACTURING SEMIC...
- Publication number 20160322422
- Publication date Nov 3, 2016
- SONY CORPORATION
- Takashi Yokoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Large area, fast frame rate charge coupled device
- Publication number 20040033656
- Publication date Feb 19, 2004
- Fairchild Imaging
- David Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Large area, fast frame rate charge coupled device
- Publication number 20040014332
- Publication date Jan 22, 2004
- Fairchild Imaging
- David Wen
- H01 - BASIC ELECTRIC ELEMENTS

Combination of charge coupled devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Sensing device for sensing minor charge variations

Semiconductor device, memory circuit, method of manufacturing semic...

Semiconductor device having symmetric and asymmetric active fins

Large area, fast frame rate charge coupled device

Large area, fast frame rate charge coupled device

CMOS imager cell having a buried contact

CMOS imager cell having a buried contact and method of fabrication

Poly gate process that provides a novel solution to fix poly-2 resi...

Forming contacts on semiconductor substrates, radiation detectors a...

Method of forming a CMOS sensor

Forming contacts on semiconductor substrates radiation detectors an...

Radiation hardened charge coupled device

Method of manufacturing a thin poly, capacitor coupled contactless...

Method for preventing microroughness and contamination during CCD m...

Process for forming an output circuit device for a charge transfer...

Output circuit device for a charge transfer element having triparti...

Method of manufacturing an integrated circuit having a charge coupl...

Output circuit device for charge transfer element

Method of making transparent polysilicon gate for imaging arrays

Method for fabricating charge-coupled device

Integrated circuit having a charge coupled device and MOS transisto...

Solid-state imaging device and method of manufacturing the same

Virtual phase charge transfer device

Method of manufacturing semiconductor device

Semiconductor device and method of manufacturing same

Method of making edge-aligned implants and electrodes therefor

Semiconductor structure with improved isolation between two layers...

Method for making eutectic charge-coupled devices

Co-planar barrier-type charge coupled device with enhanced storage...

Method of making buried channel charge coupled device with means fo...

Patents Applicationslast 30 patents

Sensing Device for Sensing Minor Charge Variations

SEMICONDUCTOR DEVICE, MEMORY CIRCUIT, METHOD OF MANUFACTURING SEMIC...

Large area, fast frame rate charge coupled device

Large area, fast frame rate charge coupled device