Combination of depletion and enhancement field effect transistors

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H01L27/0883

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/0883Combination of depletion and enhancement field effect transistors

Industries

Patents Grantslast 30 patents

Information Patent Grant
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Induced super-junction transistors
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Information Patent Grant
Half-bridge circuit using monolithic flip-chip GaN power devices
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- NAVITAS SEMICONDUCTOR LIMITED
- Daniel M. Kinzer
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Information Patent Grant
Pulsed level shift and inverter circuits for GaN devices
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Information Patent Grant
Half-bridge circuit using separately packaged GaN power devices
- Patent number 11,770,010
- Issue date Sep 26, 2023
- NAVITAS SEMICONDUCTOR LIMITED
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
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Information Patent Grant
Half-bridge circuit using flip-chip GaN power devices
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- Issue date Sep 12, 2023
- NAVITAS SEMICONDUCTOR LIMITED
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Information Patent Grant
Module configurations for integrated III-Nitride devices
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- Issue date Jul 25, 2023
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Information Patent Grant
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- Patent number 11,664,417
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- Intel Corporation
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HEMT power device operating in enhancement mode and manufacturing p...
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- Issue date Mar 28, 2023
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Epitaxial structure of N-face group III nitride, active device, and...
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- Issue date Mar 14, 2023
- Chih-Shu Huang
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Information Patent Grant
Half-bridge circuit using GaN power devices
- Patent number 11,605,955
- Issue date Mar 14, 2023
- NAVITAS SEMICONDUCTOR LIMITED
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- H03 - BASIC ELECTRONIC CIRCUITRY
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Semiconductor device and method of manufacturing the same
- Patent number 11,587,869
- Issue date Feb 21, 2023
- ABLIC INC.
- Hisashi Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

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PHYSICAL UNCLONABLE FUNCTION DEVICE AND METHOD
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- Publication number 20240274599
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- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240258323
- Publication date Aug 1, 2024
- Semiconductor Energy Laboratory Co., Ltd.
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SEMICONDUCTOR DEVICE
- Publication number 20240250085
- Publication date Jul 25, 2024
- Vanguard International Semiconductor Corporation
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HALF-BRIDGE CIRCUIT USING MONOLITHIC FLIP-CHIP GAN POWER DEVICES
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- Navitas Semiconductor Limited
- Daniel M. Kinzer
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INTEGRATED DEPLETION AND ENHANCEMENT MODE GALLIUM NITRIDE HIGH-ELEC...
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- Invention And Collaboration Laboratory Pte. Ltd.
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- Transphorm Technology, Inc.
- David Michael Rhodes
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- Yang Beom KANG
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Semiconductor structure and forming method thereof
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PULSED LEVEL SHIFT AND INVERTER CIRCUITS FOR GAN DEVICES
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- Navitas Semiconductor Limited
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- Apple Inc.
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Combination of depletion and enhancement field effect transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor structure and method of forming thereof

Induced super-junction transistors

Module configurations for integrated III-nitride devices

III-V semiconductor device with integrated protection functions

Semiconductor structure and forming method thereof

Transistor module and its associated semiconductor module

Physical unclonable function device and method

Apparatus and circuits including transistors with different thresho...

Light-emitting device

Semiconductor integrated circuit with edge structure to decrease le...

Integrated circuit including dipole incorporation for threshold vol...

Half-bridge circuit using monolithic flip-chip GaN power devices

Pulsed level shift and inverter circuits for GaN devices

Semiconductor device and manufacturing method thereof

Reprogrammable quantum processor architecture

Half-bridge circuit using separately packaged GaN power devices

E-D mode 2DEG FET with gate spacer to locally tune VT and improve b...

Half-bridge circuit using flip-chip GaN power devices

Module configurations for integrated III-Nitride devices

Semiconductor device and manufacturing method thereof

Monolithic integration of a thin film transistor over a complimenta...

III-N metal-insulator-semiconductor field effect transistors with m...

HEMT power device operating in enhancement mode and manufacturing p...

Semiconductor device and method for fabricating the same

Reprogrammable quantum processor architecture incorporating quantum...

Semiconductor device

Semiconductor device having deep trench structure and method of man...

Epitaxial structure of N-face group III nitride, active device, and...

Half-bridge circuit using GaN power devices

Semiconductor device and method of manufacturing the same

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

PROTECTION CIRCUIT AND SEMICONDUCTOR DEVICE

Reference Voltage Circuit

Reference Voltage Circuit

ELECTRONIC DEVICE

PHYSICAL UNCLONABLE FUNCTION DEVICE AND METHOD

ENHANCEMENT MOSFET AND SEMICONDUCTOR DEVICE

APPARATUS AND CIRCUITS INCLUDING TRANSISTORS WITH DIFFERENT THRESHO...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

HALF-BRIDGE CIRCUIT USING MONOLITHIC FLIP-CHIP GAN POWER DEVICES

ONE TIME PROGRAMMABLE DEVICE

INTEGRATED CIRCUIT INCLUDING DIPOLE INCORPORATION FOR THRESHOLD VOL...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH REFERENCE VOLTAGE CIRCUIT

MONOLITHIC CASCODE MULTI-CHANNEL HIGH ELECTRON MOBILITY TRANSISTORS

INTEGRATED DEPLETION AND ENHANCEMENT MODE GALLIUM NITRIDE HIGH-ELEC...

SEMICONDUCTOR STRUCTURE AND TRANSISTOR STRUCTURE

TRANSISTOR MODULE AND ITS ASSOCIATED SEMICONDUCTOR MODULE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

MODULE CONFIGURATIONS FOR INTEGRATED III-NITRIDE DEVICES

Induced Super-Junction Transistors

SEMICONDUCTOR DEVICE HAVING DEEP TRENCH STRUCTURE AND METHOD OF MAN...

APPARATUS AND CIRCUITS INCLUDING TRANSISTORS WITH DIFFERENT THRESHO...

HALF-BRIDGE CIRCUIT USING SEPARATELY PACKAGED GAN POWER DEVICES

Semiconductor structure and forming method thereof

PULSED LEVEL SHIFT AND INVERTER CIRCUITS FOR GAN DEVICES

INTEGRATED CIRCUIT INCLUDING DIPOLE INCORPORATION FOR THRESHOLD VOL...

Leakage Current Reduction in Electrical Isolation Gate Structures